DEVICES WITH GRAPHENE LAYERS | Matter42 Literature
Patent details
Patent
US 8,163,634
DEVICES WITH GRAPHENE LAYERS
Jorge Manuel Garcia, Loren N. Pfeiffer
2012-04-24·US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 12 dependent
1
IndependentBNgraphene-like layer
1. A method, comprising: providing a crystalline cubic boron-nitrid e substrate with a diamond-type lattice and an exposed substantially (1 11)-surface; and growing feming a graphene-like layer on the exposed substantially (111)-surface.
2
Dependent← claim 1BNgraphene-like layer
The method of claim 1, wherein the (1 1)-surface has lateral lattice constants that match those of lattice constants of the graphene-like layer to, at least, about 3 percent.
3
Dependent← claim 1BNgraphene-like layer
The method of claim 1, wherein the substrate-includec diugrowing step includes epitaxially growing the graphene- like layer.
4
Dependent← claim 1BNgraphene-like layerC
The method of claim 1, wherein the g rowin g fenmg step includes depositing one or more layers of carbon atoms on the substantially (1 1])- surface.
10
Independent
10-15. canceled
11
Independent
canceled
12
Independent
canceled
13
Independent
canceled
14
Independent
canceled
15
Independent
canceled
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
graphene-channel transistor
BNgate dielectric
graphene-like layerchannel
BNsubstrate
Materials
Materials described outside the worked examples.
crystalline cubic boron nitride substrate
BN
Substrate
Gate Dielectric
graphene-like layer
Claimed Channel Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 12 dependent
1
IndependentBNgraphene-like layer
1. A method, comprising: providing a crystalline cubic boron-nitrid e substrate with a diamond-type lattice and an exposed substantially (1 11)-surface; and growing feming a graphene-like layer on the exposed substantially (111)-surface.
2
Dependent← claim 1BNgraphene-like layer
The method of claim 1, wherein the (1 1)-surface has lateral lattice constants that match those of lattice constants of the graphene-like layer to, at least, about 3 percent.
3
Dependent← claim 1BNgraphene-like layer
The method of claim 1, wherein the substrate-includec diugrowing step includes epitaxially growing the graphene- like layer.
4
Dependent← claim 1BNgraphene-like layerC
The method of claim 1, wherein the g rowin g fenmg step includes depositing one or more layers of carbon atoms on the substantially (1 1])- surface.
10
Independent
10-15. canceled
11
Independent
canceled
12
Independent
canceled
13
Independent
canceled
14
Independent
canceled
15
Independent
canceled
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
graphene-channel transistor
BNgate dielectric
graphene-like layerchannel
BNsubstrate
Materials
Materials described outside the worked examples.
crystalline cubic boron nitride substrate
BN
Substrate
Gate Dielectric
graphene-like layer
Claimed Channel Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 12 dependent
1
IndependentBNgraphene-like layer
1. A method, comprising: providing a crystalline cubic boron-nitrid e substrate with a diamond-type lattice and an exposed substantially (1 11)-surface; and growing feming a graphene-like layer on the exposed substantially (111)-surface.
2
Dependent← claim 1BNgraphene-like layer
The method of claim 1, wherein the (1 1)-surface has lateral lattice constants that match those of lattice constants of the graphene-like layer to, at least, about 3 percent.
3
Dependent← claim 1BNgraphene-like layer
The method of claim 1, wherein the substrate-includec diugrowing step includes epitaxially growing the graphene- like layer.
4
Dependent← claim 1BNgraphene-like layerC
The method of claim 1, wherein the g rowin g fenmg step includes depositing one or more layers of carbon atoms on the substantially (1 1])- surface.
10
Independent
10-15. canceled
11
Independent
canceled
12
Independent
canceled
13
Independent
canceled
14
Independent
canceled
15
Independent
canceled
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
graphene-channel transistor
BNgate dielectric
graphene-like layerchannel
BNsubstrate
Materials
Materials described outside the worked examples.
crystalline cubic boron nitride substrate
BN
Substrate
Gate Dielectric
graphene-like layer
Claimed Channel Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 12 dependent
1
IndependentBNgraphene-like layer
1. A method, comprising: providing a crystalline cubic boron-nitrid e substrate with a diamond-type lattice and an exposed substantially (1 11)-surface; and growing feming a graphene-like layer on the exposed substantially (111)-surface.
2
Dependent← claim 1BNgraphene-like layer
The method of claim 1, wherein the (1 1)-surface has lateral lattice constants that match those of lattice constants of the graphene-like layer to, at least, about 3 percent.
3
Dependent← claim 1BNgraphene-like layer
The method of claim 1, wherein the substrate-includec diugrowing step includes epitaxially growing the graphene- like layer.
4
Dependent← claim 1BNgraphene-like layerC
The method of claim 1, wherein the g rowin g fenmg step includes depositing one or more layers of carbon atoms on the substantially (1 1])- surface.
10
Independent
10-15. canceled
11
Independent
canceled
12
Independent
canceled
13
Independent
canceled
14
Independent
canceled
15
Independent
canceled
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
graphene-channel transistor
BNgate dielectric
graphene-like layerchannel
BNsubstrate
Materials
Materials described outside the worked examples.
crystalline cubic boron nitride substrate
BN
Substrate
Gate Dielectric
graphene-like layer
Claimed Channel Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
