METHOD OF MAKING DEVICES INCLUDING GRAPHENE LAYERS EPITAXIALLY GROWN ON SINGLE CRYSTAL SUBSTRATES

Loren Neil Pfeiﬀer

Patent

Atlas literature

Patent

US 7,927,978

METHOD OF MAKING DEVICES INCLUDING GRAPHENE LAYERS EPITAXIALLY GROWN ON SINGLE CRYSTAL SUBSTRATES

Loren Neil Pfeiffer

2011-04-19·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

11 independent · 8 dependent

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Independentgraphenesingle crystal electrically insulative first region with hexagonal crystal lattice lattice-matched to graphenedevice with graphene layer sandwiched between lattice-matched insulative regions
A method of making a device comprising the steps of: 5 I (a) providing a body including a sing l e crystal, electrically insulative ﬁrst region on a major surface of said body, said region having a hexagonal crystal lattice substantially lattice- matched to graphene, and (b) epitaxially depositing at least one graphene layer on said ﬁrst reg i on;;hnhd (c) formin g a multi-layered, sin g le crystal, electrically insulative second re gion" on 10 said at least one graphcne la y er, said second region havin g, a he x agonal cr y stal lattice within each layer thereof and bein g substantially lattice-matched to graphene.
1. 10
  Dependent← claim 9graphenesingle crystal electrically insulative first region with hexagonal crystal lattice lattice-matched to grapheneh-BN
  The method of claim 9, wherein step (a) further includes the steps of (al) providing a single crystal substrate of graphite a n d (a2) epitaxially forming multi- 15- layered, single crystal hexagonal BN on said substrate, said hexagonal BN h avin,- inclu ding- said *u-ae ﬁrst region substantially lattice-matched to graphene, and step (b) includes epitaxially depositing said at least one graphene layer on said surfnee-ﬁrst region of said hexagonal BN layer.
2. 12
  Dependent← claim 9graphenesingle crystal electrically insulative first region with hexagonal crystal lattice lattice-matched to graphene
  The method of claim 9, wherein step (a) includes providing said body having said -. e-ﬁrst region so that the lattice-mismatch between said ﬁrst region 25 and said graphene layer is less than about 2%.
3. 14
  Dependent← claim 9graphene
  The method of claim 9, wherein said at least one graphene layer is deposited by MBE.
4. 15
  Dependent← claim 9graphenevitreous carbon
  5 15. The method of claim 9, wherein said at least one graphene layer is deposited by MBE from a vitreous carbon source.
5. 16
  Dependent← claim 9graphene
  The method of claim 9, wherein said graphene layer is deposited by CVD.
6. 19
  Dependent← claim 9graphenefield-effect transistor (FET) with graphene channel
  The method of claim 9 for fabricating a FET, wherein steps 20 (a) and (b) form said at least one graphene layer on a n said electrically insulating swFfeef-iirst re g ion of said body, and further including the steps of: (d) forming source and drain regions, (e) forming a channel region coupling said source and drain regions to one another, and (f) forming a gate region conﬁgured to apply voltage to said channel region, thereby to 25 control the ﬂow of current between said source and drain regions, and wherein step (e) for m s said channel region to include a portion of said at least one graphene layer.
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The method o f caim- 9,frher in cl uding -the-sdlitio ana s t ep (e) of epitnxially depositiu-a-m.uI.i-htye red, siVtgne-e4#tdl-4Eetl regintI on -aid -t-lew -one grphee-10yer- id sec ond regi on-h ui.g-ii-hexagon al crystal lattie within eacb4tyer the reoft-thehe nagonil erystal-hat4iee-being sub tantisdl ttiee -matched to geapheue. canceled
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The -m ethod ef-elaim-1- wherein s ttid-#.eend-region cOMprses hexgonl-N. canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

device with graphene layer sandwiched between lattice-matched insulative regions

single crystal electrically insulative first region with hexagonal crystal lattice lattice-matched to graphenetop insulative region

graphenechannel

single crystal electrically insulative first region with hexagonal crystal lattice lattice-matched to graphenesubstrate/first insulative region

field-effect transistor (FET) with graphene channel

graphenechannel

single crystal electrically insulative first region with hexagonal crystal lattice lattice-matched to graphene

Materials

Materials described outside the worked examples.

graphene

Claimed Channel Material

single crystal electrically insulative first region with hexagonal crystal lattice lattice-matched to graphene

Claimed Substrate Or Dielectric

hexagonal boron nitride

Process steps

Additional fabrication and treatment steps described in the patent.

Epitaxial Deposition

Step 1

Process details

notes:Graphene epitaxially deposited on lattice-matched hexagonal crystal first region; second insulative region epitaxially formed on graphene

method:MBE or CVD

substrate:single crystal electrically insulative first region with hexagonal lattice lattice-matched to graphene

Materials:

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD OF MAKING DEVICES INCLUDING GRAPHENE LAYERS EPITAXIALLY GROWN ON SINGLE CRYSTAL SUBSTRATES | Matter42 Literature