Patent
US 11,545,566GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS (HEMTs) HAVING REDUCED CURRENT COLLAPSE AND POWER ADDED EFFICIENCY ENHANCEMENT
Abbas Torabi, Brian D. Schultz, John Logan
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
Patent
US 11,545,566Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatical, cross-sectional sketch of a Group I II -Nitride HEMT structure according to the PRIOR ART;
FIG. 2. Like reference symbols in the various drawings indicate like elements.
FIG. 3A is a diagrammatical, cross-sectional sketch of a Group I II -Nitride HEMT structure without an additional doped layer between the U I D GaN channel and …
FIG. 4 B is a plot of normalized drain leakage and gate leakage current versus drain- to-source voltage for the structure of
FIG. 5 B is a plot of normalized drain current versus drain-to-source voltage for a quasi-static configuration and a 28V pulsed configuration highlighting the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity GaN buffer layer disposed on the substrate, the high resistivity GaN buffer layer doped with beryllium, and having a resistivity greater than 2.2 x 1 0 3 ohm * cm; a doped GaN thin film layer disposed on, and in direct contact with, the high resistivity GaN buffer layer, the doped GaN thin film layer having a thickness between 10 and 300 nm and having multiple different dopants where one of the dopants is beryllium and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and one of the dopants is carbon and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (U I D) GaN channel layer on, and in direct contact with, the doped GaN thin film layer, the UID GaN channel layer having a 2DEG channel therein and wherein the UID GaN channel layer has a thickness between 50 and 200 nm. Currently amended
The structure recited in claim 1 including a barrier layer on, and in direct contact with, the UID GaN channel la y er. Original
The structure recited in claim 1 including a nucleation layer disposed on the substrate. Original
Claims 3 and 4 Canceled
Canceled
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity G aN buffer layer disposed on the substrate, the high resistivity GaN buffer layer., having a resistivity greater than 2.2 x 10 3 ohm*cm; a doped G aN thin film layer disposed on, and in direct contact with, the high resistivity G aN buffer layer, the doped G aN thin film layer being doped with beryllium and carbon and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (U I D) G aN channel layer on, and in direct contact with, the doped G aN thin film layer, the U ID G aN channel layer having a 2DEG channel therein and wherein the U ID G aN channel layer has a thickness less than 200 nm. Currently amended
The structure recited in claim 6 wherein the U ID G aN channel lay er has a thickness between 50 and 200 nm. Previously presented
The structure recited in claim 6 wherein the doped GaN thin film layer has a thickness of 10 to 300 nm. Currently amended
The structure recited in claim 6 including a barrier layer on, and in direct contact with, the UID GaN channel layer. Original
Canceled
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity GaN buffer layer disposed on the substrate, the high resistivity GaN buffer layer doped with beryllium, iron and/or carbon; a doped GaN thin film layer disposed on, and in direct contact with, the high resistivity GaN buffer layer, the doped GaN thin film layer being doped with beryllium and carbon and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN thin film layer, the UID GaN channel layer having a 2DEG channel therein and wherein the UID GaN channel layer has a thickness less than 200 nm. New
The structure recited in claim 11 wherein the UID GaN channel layer has a thickness between 50 and 200 nm. New
The structure recited in claim I I wherein the doped GaN thin film layer has a thickness of to 300 nm. New
Layer stacks claimed or described, ordered top of device to substrate.
High Electron Mobility Transistor (HEMT)-claim 1
High Electron Mobility Transistor (HEMT)-claim 6
Materials described outside the worked examples.
high resistivity GaN buffer layer doped with beryllium
GaN:Be
substrate
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 B is a plot of normalized drain current versus drain-to-source voltage for a quasi-static configuration and a 28V pulsed configuration highlighting the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity of beryllium-doped GaN buffer (5x10^18 atoms/cm^3) | 2200 ohm*cm | GaN:Be |
resistivity of iron-doped GaN buffer | 300000 ohm*cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,545,566Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatical, cross-sectional sketch of a Group I II -Nitride HEMT structure according to the PRIOR ART;
FIG. 2. Like reference symbols in the various drawings indicate like elements.
FIG. 3A is a diagrammatical, cross-sectional sketch of a Group I II -Nitride HEMT structure without an additional doped layer between the U I D GaN channel and …
FIG. 4 B is a plot of normalized drain leakage and gate leakage current versus drain- to-source voltage for the structure of
FIG. 5 B is a plot of normalized drain current versus drain-to-source voltage for a quasi-static configuration and a 28V pulsed configuration highlighting the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity GaN buffer layer disposed on the substrate, the high resistivity GaN buffer layer doped with beryllium, and having a resistivity greater than 2.2 x 1 0 3 ohm * cm; a doped GaN thin film layer disposed on, and in direct contact with, the high resistivity GaN buffer layer, the doped GaN thin film layer having a thickness between 10 and 300 nm and having multiple different dopants where one of the dopants is beryllium and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and one of the dopants is carbon and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (U I D) GaN channel layer on, and in direct contact with, the doped GaN thin film layer, the UID GaN channel layer having a 2DEG channel therein and wherein the UID GaN channel layer has a thickness between 50 and 200 nm. Currently amended
The structure recited in claim 1 including a barrier layer on, and in direct contact with, the UID GaN channel la y er. Original
The structure recited in claim 1 including a nucleation layer disposed on the substrate. Original
Claims 3 and 4 Canceled
Canceled
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity G aN buffer layer disposed on the substrate, the high resistivity GaN buffer layer., having a resistivity greater than 2.2 x 10 3 ohm*cm; a doped G aN thin film layer disposed on, and in direct contact with, the high resistivity G aN buffer layer, the doped G aN thin film layer being doped with beryllium and carbon and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (U I D) G aN channel layer on, and in direct contact with, the doped G aN thin film layer, the U ID G aN channel layer having a 2DEG channel therein and wherein the U ID G aN channel layer has a thickness less than 200 nm. Currently amended
The structure recited in claim 6 wherein the U ID G aN channel lay er has a thickness between 50 and 200 nm. Previously presented
The structure recited in claim 6 wherein the doped GaN thin film layer has a thickness of 10 to 300 nm. Currently amended
The structure recited in claim 6 including a barrier layer on, and in direct contact with, the UID GaN channel layer. Original
Canceled
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity GaN buffer layer disposed on the substrate, the high resistivity GaN buffer layer doped with beryllium, iron and/or carbon; a doped GaN thin film layer disposed on, and in direct contact with, the high resistivity GaN buffer layer, the doped GaN thin film layer being doped with beryllium and carbon and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN thin film layer, the UID GaN channel layer having a 2DEG channel therein and wherein the UID GaN channel layer has a thickness less than 200 nm. New
The structure recited in claim 11 wherein the UID GaN channel layer has a thickness between 50 and 200 nm. New
The structure recited in claim I I wherein the doped GaN thin film layer has a thickness of to 300 nm. New
Layer stacks claimed or described, ordered top of device to substrate.
High Electron Mobility Transistor (HEMT)-claim 1
High Electron Mobility Transistor (HEMT)-claim 6
Materials described outside the worked examples.
high resistivity GaN buffer layer doped with beryllium
GaN:Be
substrate
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 B is a plot of normalized drain current versus drain-to-source voltage for a quasi-static configuration and a 28V pulsed configuration highlighting the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity of beryllium-doped GaN buffer (5x10^18 atoms/cm^3) | 2200 ohm*cm | GaN:Be |
resistivity of iron-doped GaN buffer | 300000 ohm*cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,545,566Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatical, cross-sectional sketch of a Group I II -Nitride HEMT structure according to the PRIOR ART;
FIG. 2. Like reference symbols in the various drawings indicate like elements.
FIG. 3A is a diagrammatical, cross-sectional sketch of a Group I II -Nitride HEMT structure without an additional doped layer between the U I D GaN channel and …
FIG. 4 B is a plot of normalized drain leakage and gate leakage current versus drain- to-source voltage for the structure of
FIG. 5 B is a plot of normalized drain current versus drain-to-source voltage for a quasi-static configuration and a 28V pulsed configuration highlighting the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity GaN buffer layer disposed on the substrate, the high resistivity GaN buffer layer doped with beryllium, and having a resistivity greater than 2.2 x 1 0 3 ohm * cm; a doped GaN thin film layer disposed on, and in direct contact with, the high resistivity GaN buffer layer, the doped GaN thin film layer having a thickness between 10 and 300 nm and having multiple different dopants where one of the dopants is beryllium and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and one of the dopants is carbon and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (U I D) GaN channel layer on, and in direct contact with, the doped GaN thin film layer, the UID GaN channel layer having a 2DEG channel therein and wherein the UID GaN channel layer has a thickness between 50 and 200 nm. Currently amended
The structure recited in claim 1 including a barrier layer on, and in direct contact with, the UID GaN channel la y er. Original
The structure recited in claim 1 including a nucleation layer disposed on the substrate. Original
Claims 3 and 4 Canceled
Canceled
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity G aN buffer layer disposed on the substrate, the high resistivity GaN buffer layer., having a resistivity greater than 2.2 x 10 3 ohm*cm; a doped G aN thin film layer disposed on, and in direct contact with, the high resistivity G aN buffer layer, the doped G aN thin film layer being doped with beryllium and carbon and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (U I D) G aN channel layer on, and in direct contact with, the doped G aN thin film layer, the U ID G aN channel layer having a 2DEG channel therein and wherein the U ID G aN channel layer has a thickness less than 200 nm. Currently amended
The structure recited in claim 6 wherein the U ID G aN channel lay er has a thickness between 50 and 200 nm. Previously presented
The structure recited in claim 6 wherein the doped GaN thin film layer has a thickness of 10 to 300 nm. Currently amended
The structure recited in claim 6 including a barrier layer on, and in direct contact with, the UID GaN channel layer. Original
Canceled
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity GaN buffer layer disposed on the substrate, the high resistivity GaN buffer layer doped with beryllium, iron and/or carbon; a doped GaN thin film layer disposed on, and in direct contact with, the high resistivity GaN buffer layer, the doped GaN thin film layer being doped with beryllium and carbon and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN thin film layer, the UID GaN channel layer having a 2DEG channel therein and wherein the UID GaN channel layer has a thickness less than 200 nm. New
The structure recited in claim 11 wherein the UID GaN channel layer has a thickness between 50 and 200 nm. New
The structure recited in claim I I wherein the doped GaN thin film layer has a thickness of to 300 nm. New
Layer stacks claimed or described, ordered top of device to substrate.
High Electron Mobility Transistor (HEMT)-claim 1
High Electron Mobility Transistor (HEMT)-claim 6
Materials described outside the worked examples.
high resistivity GaN buffer layer doped with beryllium
GaN:Be
substrate
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 B is a plot of normalized drain current versus drain-to-source voltage for a quasi-static configuration and a 28V pulsed configuration highlighting the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity of beryllium-doped GaN buffer (5x10^18 atoms/cm^3) | 2200 ohm*cm | GaN:Be |
resistivity of iron-doped GaN buffer | 300000 ohm*cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,545,566Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatical, cross-sectional sketch of a Group I II -Nitride HEMT structure according to the PRIOR ART;
FIG. 2. Like reference symbols in the various drawings indicate like elements.
FIG. 3A is a diagrammatical, cross-sectional sketch of a Group I II -Nitride HEMT structure without an additional doped layer between the U I D GaN channel and …
FIG. 4 B is a plot of normalized drain leakage and gate leakage current versus drain- to-source voltage for the structure of
FIG. 5 B is a plot of normalized drain current versus drain-to-source voltage for a quasi-static configuration and a 28V pulsed configuration highlighting the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity GaN buffer layer disposed on the substrate, the high resistivity GaN buffer layer doped with beryllium, and having a resistivity greater than 2.2 x 1 0 3 ohm * cm; a doped GaN thin film layer disposed on, and in direct contact with, the high resistivity GaN buffer layer, the doped GaN thin film layer having a thickness between 10 and 300 nm and having multiple different dopants where one of the dopants is beryllium and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and one of the dopants is carbon and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (U I D) GaN channel layer on, and in direct contact with, the doped GaN thin film layer, the UID GaN channel layer having a 2DEG channel therein and wherein the UID GaN channel layer has a thickness between 50 and 200 nm. Currently amended
The structure recited in claim 1 including a barrier layer on, and in direct contact with, the UID GaN channel la y er. Original
The structure recited in claim 1 including a nucleation layer disposed on the substrate. Original
Claims 3 and 4 Canceled
Canceled
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity G aN buffer layer disposed on the substrate, the high resistivity GaN buffer layer., having a resistivity greater than 2.2 x 10 3 ohm*cm; a doped G aN thin film layer disposed on, and in direct contact with, the high resistivity G aN buffer layer, the doped G aN thin film layer being doped with beryllium and carbon and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (U I D) G aN channel layer on, and in direct contact with, the doped G aN thin film layer, the U ID G aN channel layer having a 2DEG channel therein and wherein the U ID G aN channel layer has a thickness less than 200 nm. Currently amended
The structure recited in claim 6 wherein the U ID G aN channel lay er has a thickness between 50 and 200 nm. Previously presented
The structure recited in claim 6 wherein the doped GaN thin film layer has a thickness of 10 to 300 nm. Currently amended
The structure recited in claim 6 including a barrier layer on, and in direct contact with, the UID GaN channel layer. Original
Canceled
A High Electron Mobility Transistor structure, comprising: a substrate; a high resistivity GaN buffer layer disposed on the substrate, the high resistivity GaN buffer layer doped with beryllium, iron and/or carbon; a doped GaN thin film layer disposed on, and in direct contact with, the high resistivity GaN buffer layer, the doped GaN thin film layer being doped with beryllium and carbon and wherein the beryllium doping is 5x10 16 to 3x10 19 atoms/cm 3 and wherein the carbon doping is less than the beryllium doping but higher than 1 x 10 16 atoms/cm 3; and an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN thin film layer, the UID GaN channel layer having a 2DEG channel therein and wherein the UID GaN channel layer has a thickness less than 200 nm. New
The structure recited in claim 11 wherein the UID GaN channel layer has a thickness between 50 and 200 nm. New
The structure recited in claim I I wherein the doped GaN thin film layer has a thickness of to 300 nm. New
Layer stacks claimed or described, ordered top of device to substrate.
High Electron Mobility Transistor (HEMT)-claim 1
High Electron Mobility Transistor (HEMT)-claim 6
Materials described outside the worked examples.
high resistivity GaN buffer layer doped with beryllium
GaN:Be
substrate
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 B is a plot of normalized drain current versus drain-to-source voltage for a quasi-static configuration and a 28V pulsed configuration highlighting the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity of beryllium-doped GaN buffer (5x10^18 atoms/cm^3) | 2200 ohm*cm | GaN:Be |
resistivity of iron-doped GaN buffer | 300000 ohm*cm |
Related documents with shared materials, methods, properties, or citations.
High Electron Mobility Transistor (HEMT)-claim 11
HEMT structure described in detailed description
doped GaN thin film layer with beryllium and carbon
GaN:Be,C
beryllium dopant
Be
unintentionally doped GaN channel layer
GaN
barrier layer
nucleation layer
iron dopant
Fe
iron-doped GaN buffer
GaN:Fe
carbon-doped GaN buffer
GaN:C
AlGaN barrier layer
AlGaN
InAlGaN barrier layer
InAlGaN
ScAlN barrier layer
ScAlN
AlN nucleation layer
AlN
resistivity of carbon-doped GaN buffer | 100000000 ohm*cm | GaN:C |
Thickness | 10–300 nm | — |
Thickness | 50–200 nm | — |
Temperature | 660–780 °C | — |
Thickness | ≤ 200 nm | — |
High Electron Mobility Transistor (HEMT)-claim 11
HEMT structure described in detailed description
doped GaN thin film layer with beryllium and carbon
GaN:Be,C
beryllium dopant
Be
unintentionally doped GaN channel layer
GaN
barrier layer
nucleation layer
iron dopant
Fe
iron-doped GaN buffer
GaN:Fe
carbon-doped GaN buffer
GaN:C
AlGaN barrier layer
AlGaN
InAlGaN barrier layer
InAlGaN
ScAlN barrier layer
ScAlN
AlN nucleation layer
AlN
resistivity of carbon-doped GaN buffer | 100000000 ohm*cm | GaN:C |
Thickness | 10–300 nm | — |
Thickness | 50–200 nm | — |
Temperature | 660–780 °C | — |
Thickness | ≤ 200 nm | — |
High Electron Mobility Transistor (HEMT)-claim 11
HEMT structure described in detailed description
doped GaN thin film layer with beryllium and carbon
GaN:Be,C
beryllium dopant
Be
unintentionally doped GaN channel layer
GaN
barrier layer
nucleation layer
iron dopant
Fe
iron-doped GaN buffer
GaN:Fe
carbon-doped GaN buffer
GaN:C
AlGaN barrier layer
AlGaN
InAlGaN barrier layer
InAlGaN
ScAlN barrier layer
ScAlN
AlN nucleation layer
AlN
resistivity of carbon-doped GaN buffer | 100000000 ohm*cm | GaN:C |
Thickness | 10–300 nm | — |
Thickness | 50–200 nm | — |
Temperature | 660–780 °C | — |
Thickness | ≤ 200 nm | — |
High Electron Mobility Transistor (HEMT)-claim 11
HEMT structure described in detailed description
doped GaN thin film layer with beryllium and carbon
GaN:Be,C
beryllium dopant
Be
unintentionally doped GaN channel layer
GaN
barrier layer
nucleation layer
iron dopant
Fe
iron-doped GaN buffer
GaN:Fe
carbon-doped GaN buffer
GaN:C
AlGaN barrier layer
AlGaN
InAlGaN barrier layer
InAlGaN
ScAlN barrier layer
ScAlN
AlN nucleation layer
AlN
resistivity of carbon-doped GaN buffer | 100000000 ohm*cm | GaN:C |
Thickness | 10–300 nm | — |
Thickness | 50–200 nm | — |
Temperature | 660–780 °C | — |
Thickness | ≤ 200 nm | — |