Patent
US 9,475,703GRAPHENE BASE AND METHOD OF PREPARING THE SAME
Hyeon-jin SHIN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,475,703Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating an exemplary embodiment of a graphene base; [0034]
FIG. 2 is a diagram of an exemplary embodiment of a method of preparing a graphene base; [0035]
FIG. 3 is a diagram of another exemplary embodiment of a method of preparing a patterned graphene base; [0036]
FIG. 4 is a transmission electron microscope ("TEM") photographic image of a graphene base obtained in Example 1; [0037]
FIG. 5 is a TEM photographic image of a graphene base obtained in Example 2; [0038]
FIG. 6 is a scanning electron microscope ("SEM") photographic image of graphene obtained in Example 1; [0039]
FIG. 7 is a SEM photographic image of graphene obtained in Example 2; [0040]
FIG. 8 is a Raman spectrum illustrating intensity (arbitrary units) versus wavelength (inverse centimeters, cm-) of graphene obtained in Example 4 (poly …
FIG. 9 is micrograph from an atomic force microscope ("AFM") showing a pattern of a self- assembled layer obtained in Example 7; and [0042]
FIG. 10 is an optical photograph of a graphene pattern obtained in Example 7.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a graphene base, the method comprising: disposing a carbon-based material on at least one surface of a substrate; disposing a graphitization catalyst layer on the carbon-based material _ a<i suirh subsrcg; and forming graphene by thermally treating the substrate, on which the carbon-based material and the graphitization catalyst layer are formed, under an inert atmosphere or a reducing atmosphere.
The method of claim 1, wherein the carbon-based material is at least one selected from the group consisting of a carbon-containing polymer, a gaseous carbon- based material, amorphous carbon, and an organometallic compound.
The method of claim 1, further comprising patterning the carbon-based material on the substrate.
The method of claim 1, further comprising patterning the graphitization catalyst layer on the substrate.
The method of claim 1, further comprising forming a ceramic layer on the graphitization catalyst layer; and patterning the ceramic layer.
The method of claim 1, wherein the graphene has a patterned shape.
The method of claim 1, wherein the carbon-based material has a patterned shape.
The method of claim 1, wherein the graphitization catalyst layer has a patterned shape.
The method of claim 1, wherein a length of at least one side of the graphene is equal to or greater than 1 millimeter.
The method of claim 1, wherein the graphitization catalyst layer comprises at least one selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, thallium, titanium, tungsten, uranium, vanadium, zirconium, ruthenium, and iridium.
The method of claim 1, wherein a thickness of the graphitization catalyst layer is about nanometer to about 1 micrometer.
The method of claim 1, further comprising removing the graphitization catalyst layer by acid-treatment after the forming of the graphene.
The method of claim 1, wherein a pattern layer is disposed on one surface of the substrate before the disposing of the carbon-based material on the substrate.
Layer stacks claimed or described, ordered top of device to substrate.
graphene base
Materials described outside the worked examples.
graphene
carbon-based material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a transmission electron microscope ("TEM") photographic image of a graphene base obtained in Example 1; [0037]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
wrinkle-free area of graphene surface | ≥ 90 % | graphene |
ratio of D-band intensity to G-band intensity (Raman) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,475,703Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating an exemplary embodiment of a graphene base; [0034]
FIG. 2 is a diagram of an exemplary embodiment of a method of preparing a graphene base; [0035]
FIG. 3 is a diagram of another exemplary embodiment of a method of preparing a patterned graphene base; [0036]
FIG. 4 is a transmission electron microscope ("TEM") photographic image of a graphene base obtained in Example 1; [0037]
FIG. 5 is a TEM photographic image of a graphene base obtained in Example 2; [0038]
FIG. 6 is a scanning electron microscope ("SEM") photographic image of graphene obtained in Example 1; [0039]
FIG. 7 is a SEM photographic image of graphene obtained in Example 2; [0040]
FIG. 8 is a Raman spectrum illustrating intensity (arbitrary units) versus wavelength (inverse centimeters, cm-) of graphene obtained in Example 4 (poly …
FIG. 9 is micrograph from an atomic force microscope ("AFM") showing a pattern of a self- assembled layer obtained in Example 7; and [0042]
FIG. 10 is an optical photograph of a graphene pattern obtained in Example 7.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a graphene base, the method comprising: disposing a carbon-based material on at least one surface of a substrate; disposing a graphitization catalyst layer on the carbon-based material _ a<i suirh subsrcg; and forming graphene by thermally treating the substrate, on which the carbon-based material and the graphitization catalyst layer are formed, under an inert atmosphere or a reducing atmosphere.
The method of claim 1, wherein the carbon-based material is at least one selected from the group consisting of a carbon-containing polymer, a gaseous carbon- based material, amorphous carbon, and an organometallic compound.
The method of claim 1, further comprising patterning the carbon-based material on the substrate.
The method of claim 1, further comprising patterning the graphitization catalyst layer on the substrate.
The method of claim 1, further comprising forming a ceramic layer on the graphitization catalyst layer; and patterning the ceramic layer.
The method of claim 1, wherein the graphene has a patterned shape.
The method of claim 1, wherein the carbon-based material has a patterned shape.
The method of claim 1, wherein the graphitization catalyst layer has a patterned shape.
The method of claim 1, wherein a length of at least one side of the graphene is equal to or greater than 1 millimeter.
The method of claim 1, wherein the graphitization catalyst layer comprises at least one selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, thallium, titanium, tungsten, uranium, vanadium, zirconium, ruthenium, and iridium.
The method of claim 1, wherein a thickness of the graphitization catalyst layer is about nanometer to about 1 micrometer.
The method of claim 1, further comprising removing the graphitization catalyst layer by acid-treatment after the forming of the graphene.
The method of claim 1, wherein a pattern layer is disposed on one surface of the substrate before the disposing of the carbon-based material on the substrate.
Layer stacks claimed or described, ordered top of device to substrate.
graphene base
Materials described outside the worked examples.
graphene
carbon-based material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a transmission electron microscope ("TEM") photographic image of a graphene base obtained in Example 1; [0037]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
wrinkle-free area of graphene surface | ≥ 90 % | graphene |
ratio of D-band intensity to G-band intensity (Raman) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,475,703Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating an exemplary embodiment of a graphene base; [0034]
FIG. 2 is a diagram of an exemplary embodiment of a method of preparing a graphene base; [0035]
FIG. 3 is a diagram of another exemplary embodiment of a method of preparing a patterned graphene base; [0036]
FIG. 4 is a transmission electron microscope ("TEM") photographic image of a graphene base obtained in Example 1; [0037]
FIG. 5 is a TEM photographic image of a graphene base obtained in Example 2; [0038]
FIG. 6 is a scanning electron microscope ("SEM") photographic image of graphene obtained in Example 1; [0039]
FIG. 7 is a SEM photographic image of graphene obtained in Example 2; [0040]
FIG. 8 is a Raman spectrum illustrating intensity (arbitrary units) versus wavelength (inverse centimeters, cm-) of graphene obtained in Example 4 (poly …
FIG. 9 is micrograph from an atomic force microscope ("AFM") showing a pattern of a self- assembled layer obtained in Example 7; and [0042]
FIG. 10 is an optical photograph of a graphene pattern obtained in Example 7.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a graphene base, the method comprising: disposing a carbon-based material on at least one surface of a substrate; disposing a graphitization catalyst layer on the carbon-based material _ a<i suirh subsrcg; and forming graphene by thermally treating the substrate, on which the carbon-based material and the graphitization catalyst layer are formed, under an inert atmosphere or a reducing atmosphere.
The method of claim 1, wherein the carbon-based material is at least one selected from the group consisting of a carbon-containing polymer, a gaseous carbon- based material, amorphous carbon, and an organometallic compound.
The method of claim 1, further comprising patterning the carbon-based material on the substrate.
The method of claim 1, further comprising patterning the graphitization catalyst layer on the substrate.
The method of claim 1, further comprising forming a ceramic layer on the graphitization catalyst layer; and patterning the ceramic layer.
The method of claim 1, wherein the graphene has a patterned shape.
The method of claim 1, wherein the carbon-based material has a patterned shape.
The method of claim 1, wherein the graphitization catalyst layer has a patterned shape.
The method of claim 1, wherein a length of at least one side of the graphene is equal to or greater than 1 millimeter.
The method of claim 1, wherein the graphitization catalyst layer comprises at least one selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, thallium, titanium, tungsten, uranium, vanadium, zirconium, ruthenium, and iridium.
The method of claim 1, wherein a thickness of the graphitization catalyst layer is about nanometer to about 1 micrometer.
The method of claim 1, further comprising removing the graphitization catalyst layer by acid-treatment after the forming of the graphene.
The method of claim 1, wherein a pattern layer is disposed on one surface of the substrate before the disposing of the carbon-based material on the substrate.
Layer stacks claimed or described, ordered top of device to substrate.
graphene base
Materials described outside the worked examples.
graphene
carbon-based material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a transmission electron microscope ("TEM") photographic image of a graphene base obtained in Example 1; [0037]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
wrinkle-free area of graphene surface | ≥ 90 % | graphene |
ratio of D-band intensity to G-band intensity (Raman) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,475,703Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating an exemplary embodiment of a graphene base; [0034]
FIG. 2 is a diagram of an exemplary embodiment of a method of preparing a graphene base; [0035]
FIG. 3 is a diagram of another exemplary embodiment of a method of preparing a patterned graphene base; [0036]
FIG. 4 is a transmission electron microscope ("TEM") photographic image of a graphene base obtained in Example 1; [0037]
FIG. 5 is a TEM photographic image of a graphene base obtained in Example 2; [0038]
FIG. 6 is a scanning electron microscope ("SEM") photographic image of graphene obtained in Example 1; [0039]
FIG. 7 is a SEM photographic image of graphene obtained in Example 2; [0040]
FIG. 8 is a Raman spectrum illustrating intensity (arbitrary units) versus wavelength (inverse centimeters, cm-) of graphene obtained in Example 4 (poly …
FIG. 9 is micrograph from an atomic force microscope ("AFM") showing a pattern of a self- assembled layer obtained in Example 7; and [0042]
FIG. 10 is an optical photograph of a graphene pattern obtained in Example 7.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a graphene base, the method comprising: disposing a carbon-based material on at least one surface of a substrate; disposing a graphitization catalyst layer on the carbon-based material _ a<i suirh subsrcg; and forming graphene by thermally treating the substrate, on which the carbon-based material and the graphitization catalyst layer are formed, under an inert atmosphere or a reducing atmosphere.
The method of claim 1, wherein the carbon-based material is at least one selected from the group consisting of a carbon-containing polymer, a gaseous carbon- based material, amorphous carbon, and an organometallic compound.
The method of claim 1, further comprising patterning the carbon-based material on the substrate.
The method of claim 1, further comprising patterning the graphitization catalyst layer on the substrate.
The method of claim 1, further comprising forming a ceramic layer on the graphitization catalyst layer; and patterning the ceramic layer.
The method of claim 1, wherein the graphene has a patterned shape.
The method of claim 1, wherein the carbon-based material has a patterned shape.
The method of claim 1, wherein the graphitization catalyst layer has a patterned shape.
The method of claim 1, wherein a length of at least one side of the graphene is equal to or greater than 1 millimeter.
The method of claim 1, wherein the graphitization catalyst layer comprises at least one selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, thallium, titanium, tungsten, uranium, vanadium, zirconium, ruthenium, and iridium.
The method of claim 1, wherein a thickness of the graphitization catalyst layer is about nanometer to about 1 micrometer.
The method of claim 1, further comprising removing the graphitization catalyst layer by acid-treatment after the forming of the graphene.
The method of claim 1, wherein a pattern layer is disposed on one surface of the substrate before the disposing of the carbon-based material on the substrate.
Layer stacks claimed or described, ordered top of device to substrate.
graphene base
Materials described outside the worked examples.
graphene
carbon-based material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a transmission electron microscope ("TEM") photographic image of a graphene base obtained in Example 1; [0037]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
wrinkle-free area of graphene surface | ≥ 90 % | graphene |
ratio of D-band intensity to G-band intensity (Raman) |
Related documents with shared materials, methods, properties, or citations.
graphitization catalyst layer
ceramic layer
substrate
silicon substrate with oxide layer
FIG. 5 is a TEM photographic image of a graphene base obtained in Example 2; [0038]
FIG. 6 is a scanning electron microscope ("SEM") photographic image of graphene obtained in Example 1; [0039]
FIG. 7 is a SEM photographic image of graphene obtained in Example 2; [0040]
FIG. 8 is a Raman spectrum illustrating intensity (arbitrary units) versus wavelength (inverse centimeters, cm-) of graphene obtained in Example 4 (poly …
FIG. 9 is micrograph from an atomic force microscope ("AFM") showing a pattern of a self- assembled layer obtained in Example 7; and [0042]
| ≤ 0.5 |
graphene |
number of graphene layers on substrate | 1–300 layers | graphene |
maximum thickness of graphene | 100 nm | graphene |
thickness of graphitization catalyst layer | 1–1000 | graphitization catalyst layer |
Thickness | 10–500 nm | — |
Thickness | 20–100 nm | — |
Thickness | 20–200 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 5–500 nm | — |
Thickness | 10–250 nm | — |
Thickness | 2–500 nm | — |
Thickness | 4–250 nm | — |
Duration | 1–43200 s | — |
Duration | 60–36000 s | — |
Duration | 1800–21600 s | — |
Duration | ≤ 1 second | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 10 mm | — |
Duration | ≥ 12 hours | — |
graphitization catalyst layer
ceramic layer
substrate
silicon substrate with oxide layer
FIG. 5 is a TEM photographic image of a graphene base obtained in Example 2; [0038]
FIG. 6 is a scanning electron microscope ("SEM") photographic image of graphene obtained in Example 1; [0039]
FIG. 7 is a SEM photographic image of graphene obtained in Example 2; [0040]
FIG. 8 is a Raman spectrum illustrating intensity (arbitrary units) versus wavelength (inverse centimeters, cm-) of graphene obtained in Example 4 (poly …
FIG. 9 is micrograph from an atomic force microscope ("AFM") showing a pattern of a self- assembled layer obtained in Example 7; and [0042]
| ≤ 0.5 |
graphene |
number of graphene layers on substrate | 1–300 layers | graphene |
maximum thickness of graphene | 100 nm | graphene |
thickness of graphitization catalyst layer | 1–1000 | graphitization catalyst layer |
Thickness | 10–500 nm | — |
Thickness | 20–100 nm | — |
Thickness | 20–200 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 5–500 nm | — |
Thickness | 10–250 nm | — |
Thickness | 2–500 nm | — |
Thickness | 4–250 nm | — |
Duration | 1–43200 s | — |
Duration | 60–36000 s | — |
Duration | 1800–21600 s | — |
Duration | ≤ 1 second | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 10 mm | — |
Duration | ≥ 12 hours | — |
graphitization catalyst layer
ceramic layer
substrate
silicon substrate with oxide layer
FIG. 5 is a TEM photographic image of a graphene base obtained in Example 2; [0038]
FIG. 6 is a scanning electron microscope ("SEM") photographic image of graphene obtained in Example 1; [0039]
FIG. 7 is a SEM photographic image of graphene obtained in Example 2; [0040]
FIG. 8 is a Raman spectrum illustrating intensity (arbitrary units) versus wavelength (inverse centimeters, cm-) of graphene obtained in Example 4 (poly …
FIG. 9 is micrograph from an atomic force microscope ("AFM") showing a pattern of a self- assembled layer obtained in Example 7; and [0042]
| ≤ 0.5 |
graphene |
number of graphene layers on substrate | 1–300 layers | graphene |
maximum thickness of graphene | 100 nm | graphene |
thickness of graphitization catalyst layer | 1–1000 | graphitization catalyst layer |
Thickness | 10–500 nm | — |
Thickness | 20–100 nm | — |
Thickness | 20–200 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 5–500 nm | — |
Thickness | 10–250 nm | — |
Thickness | 2–500 nm | — |
Thickness | 4–250 nm | — |
Duration | 1–43200 s | — |
Duration | 60–36000 s | — |
Duration | 1800–21600 s | — |
Duration | ≤ 1 second | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 10 mm | — |
Duration | ≥ 12 hours | — |
graphitization catalyst layer
ceramic layer
substrate
silicon substrate with oxide layer
FIG. 5 is a TEM photographic image of a graphene base obtained in Example 2; [0038]
FIG. 6 is a scanning electron microscope ("SEM") photographic image of graphene obtained in Example 1; [0039]
FIG. 7 is a SEM photographic image of graphene obtained in Example 2; [0040]
FIG. 8 is a Raman spectrum illustrating intensity (arbitrary units) versus wavelength (inverse centimeters, cm-) of graphene obtained in Example 4 (poly …
FIG. 9 is micrograph from an atomic force microscope ("AFM") showing a pattern of a self- assembled layer obtained in Example 7; and [0042]
| ≤ 0.5 |
graphene |
number of graphene layers on substrate | 1–300 layers | graphene |
maximum thickness of graphene | 100 nm | graphene |
thickness of graphitization catalyst layer | 1–1000 | graphitization catalyst layer |
Thickness | 10–500 nm | — |
Thickness | 20–100 nm | — |
Thickness | 20–200 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 5–500 nm | — |
Thickness | 10–250 nm | — |
Thickness | 2–500 nm | — |
Thickness | 4–250 nm | — |
Duration | 1–43200 s | — |
Duration | 60–36000 s | — |
Duration | 1800–21600 s | — |
Duration | ≤ 1 second | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 10 mm | — |
Duration | ≥ 12 hours | — |