Patent
US 8,796,664GRAPHENE-BASED COMPOSITE STRUCTURE AND METHOD FOR MAKING THE SAME
WEN-HUI DUAN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,796,664Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic drawing of the graphene-based composite structure according to one embodiment. [0009]
FIG. 2 is a schematic drawing of atomic structure of the graphene-based composite structure according to one embodiment. [0010]
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
FIG. 4. When the S OC is not considered (left panel), two bands cross each other at the Fermi level, forming a perfect Dirac cone, which is the same as that in …
FIG. 5 is a flowchart of the method for making the graphene-based composite structure according to one embodiment. DETAILED DESCRIPTION [0013] The disclosure is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A graphene-based composite structure comprising: a graphene layer; a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, and the transition metal layer and the substrate are also coupled by d-p orbitals hybridization.
: The graphene-based composite structure as claimed in claim 1, wherein the graphene layer and the transition metal layer are coupled by hybridization of d orbitals of transition metal atoms in the transition metal layer and p orbitals of carbon atoms in the graphene layer.
: The graphene-based composite structure as claimed in claim 1, wherein the transition metal layer and the substrate are coupled by hybridization of d orbitals of transition metal atoms in the transition metal layer and p orbitals of silicon atoms in the substrate.
: The graphene-based composite structure as claimed in claim 1, wherein the graphene layer is a single-layer graphene.
: The graphene-based composite structure as claimed in claim 1, wherein the transition metal layer is a one-atom-thick transition metal layer.
: The graphene-based composite structure as claimed in claim 1, wherein a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Mn, Tc, Page 2 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: US₄₈₄₀₉ Re, Fe, Co and Ni.
: The graphene-based composite structure as claimed in claim 1, wherein the substrate is made of silicon carbide.
: The graphene-based composite structure as claimed in claim 1, wherein a band structure of the graphene-based composite structure is a Dirac cone.
: A graphene-based composite structure comprising: a graphene layer; Page 3 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, the transition metal layer and the substrate are also coupled by d-p orbitals hybridization, a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Tc, Re, Fe, Co and Ni, and the transition metal layer is a one-atom-thick transition metal layer.
: The graphene-based composite structure as claimed in claim 21, wherein a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Tc, Re.
: A graphene-based composite structure comprising: a graphene layer; a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, and the transition metal layer and the substrate are also coupled by d-p orbitals hybridization, a material of the substrate is silicon carbide, a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Mn, Tc, Re, Fe, Co and Ni, a binding energy between the graphene layer and a composite structure of the transition metal layer and the substrate is equal to or larger than about 0.24 eV/C.
: The graphene-based composite structure as claimed in claim 23, wherein when the transition metal is Sc, the binding energy is 0.24 eV/C; when the transition metal is Ti, the binding energy is 0.36 eV/C; Page 4 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: when the transition metal is V, the binding energy is 0.40 eV/C; when the transition metal is Cr, the binding energy is 0.43 eV/C; when the transition metal is Mn, the binding energy is 0.51 eV/C; when the transition metal is Tc, the binding energy is 0.51 eV/C; when the transition metal is Re, the binding energy is 0.51 eV/C; when the transition metal is Fe, the binding energy is 0.44 eV/C; when the transition metal is Co, the binding energy is 0.34 eV/C; and when the transition metal is Ni, the binding energy is 0.26 eV/C. Page 5 of 11
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based composite structure (sandwich)
Materials described outside the worked examples.
graphene layer
C
transition metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Sc) | 0.24 eV/C | Sc |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,796,664Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic drawing of the graphene-based composite structure according to one embodiment. [0009]
FIG. 2 is a schematic drawing of atomic structure of the graphene-based composite structure according to one embodiment. [0010]
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
FIG. 4. When the S OC is not considered (left panel), two bands cross each other at the Fermi level, forming a perfect Dirac cone, which is the same as that in …
FIG. 5 is a flowchart of the method for making the graphene-based composite structure according to one embodiment. DETAILED DESCRIPTION [0013] The disclosure is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A graphene-based composite structure comprising: a graphene layer; a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, and the transition metal layer and the substrate are also coupled by d-p orbitals hybridization.
: The graphene-based composite structure as claimed in claim 1, wherein the graphene layer and the transition metal layer are coupled by hybridization of d orbitals of transition metal atoms in the transition metal layer and p orbitals of carbon atoms in the graphene layer.
: The graphene-based composite structure as claimed in claim 1, wherein the transition metal layer and the substrate are coupled by hybridization of d orbitals of transition metal atoms in the transition metal layer and p orbitals of silicon atoms in the substrate.
: The graphene-based composite structure as claimed in claim 1, wherein the graphene layer is a single-layer graphene.
: The graphene-based composite structure as claimed in claim 1, wherein the transition metal layer is a one-atom-thick transition metal layer.
: The graphene-based composite structure as claimed in claim 1, wherein a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Mn, Tc, Page 2 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: US₄₈₄₀₉ Re, Fe, Co and Ni.
: The graphene-based composite structure as claimed in claim 1, wherein the substrate is made of silicon carbide.
: The graphene-based composite structure as claimed in claim 1, wherein a band structure of the graphene-based composite structure is a Dirac cone.
: A graphene-based composite structure comprising: a graphene layer; Page 3 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, the transition metal layer and the substrate are also coupled by d-p orbitals hybridization, a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Tc, Re, Fe, Co and Ni, and the transition metal layer is a one-atom-thick transition metal layer.
: The graphene-based composite structure as claimed in claim 21, wherein a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Tc, Re.
: A graphene-based composite structure comprising: a graphene layer; a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, and the transition metal layer and the substrate are also coupled by d-p orbitals hybridization, a material of the substrate is silicon carbide, a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Mn, Tc, Re, Fe, Co and Ni, a binding energy between the graphene layer and a composite structure of the transition metal layer and the substrate is equal to or larger than about 0.24 eV/C.
: The graphene-based composite structure as claimed in claim 23, wherein when the transition metal is Sc, the binding energy is 0.24 eV/C; when the transition metal is Ti, the binding energy is 0.36 eV/C; Page 4 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: when the transition metal is V, the binding energy is 0.40 eV/C; when the transition metal is Cr, the binding energy is 0.43 eV/C; when the transition metal is Mn, the binding energy is 0.51 eV/C; when the transition metal is Tc, the binding energy is 0.51 eV/C; when the transition metal is Re, the binding energy is 0.51 eV/C; when the transition metal is Fe, the binding energy is 0.44 eV/C; when the transition metal is Co, the binding energy is 0.34 eV/C; and when the transition metal is Ni, the binding energy is 0.26 eV/C. Page 5 of 11
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based composite structure (sandwich)
Materials described outside the worked examples.
graphene layer
C
transition metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Sc) | 0.24 eV/C | Sc |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,796,664Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic drawing of the graphene-based composite structure according to one embodiment. [0009]
FIG. 2 is a schematic drawing of atomic structure of the graphene-based composite structure according to one embodiment. [0010]
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
FIG. 4. When the S OC is not considered (left panel), two bands cross each other at the Fermi level, forming a perfect Dirac cone, which is the same as that in …
FIG. 5 is a flowchart of the method for making the graphene-based composite structure according to one embodiment. DETAILED DESCRIPTION [0013] The disclosure is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A graphene-based composite structure comprising: a graphene layer; a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, and the transition metal layer and the substrate are also coupled by d-p orbitals hybridization.
: The graphene-based composite structure as claimed in claim 1, wherein the graphene layer and the transition metal layer are coupled by hybridization of d orbitals of transition metal atoms in the transition metal layer and p orbitals of carbon atoms in the graphene layer.
: The graphene-based composite structure as claimed in claim 1, wherein the transition metal layer and the substrate are coupled by hybridization of d orbitals of transition metal atoms in the transition metal layer and p orbitals of silicon atoms in the substrate.
: The graphene-based composite structure as claimed in claim 1, wherein the graphene layer is a single-layer graphene.
: The graphene-based composite structure as claimed in claim 1, wherein the transition metal layer is a one-atom-thick transition metal layer.
: The graphene-based composite structure as claimed in claim 1, wherein a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Mn, Tc, Page 2 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: US₄₈₄₀₉ Re, Fe, Co and Ni.
: The graphene-based composite structure as claimed in claim 1, wherein the substrate is made of silicon carbide.
: The graphene-based composite structure as claimed in claim 1, wherein a band structure of the graphene-based composite structure is a Dirac cone.
: A graphene-based composite structure comprising: a graphene layer; Page 3 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, the transition metal layer and the substrate are also coupled by d-p orbitals hybridization, a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Tc, Re, Fe, Co and Ni, and the transition metal layer is a one-atom-thick transition metal layer.
: The graphene-based composite structure as claimed in claim 21, wherein a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Tc, Re.
: A graphene-based composite structure comprising: a graphene layer; a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, and the transition metal layer and the substrate are also coupled by d-p orbitals hybridization, a material of the substrate is silicon carbide, a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Mn, Tc, Re, Fe, Co and Ni, a binding energy between the graphene layer and a composite structure of the transition metal layer and the substrate is equal to or larger than about 0.24 eV/C.
: The graphene-based composite structure as claimed in claim 23, wherein when the transition metal is Sc, the binding energy is 0.24 eV/C; when the transition metal is Ti, the binding energy is 0.36 eV/C; Page 4 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: when the transition metal is V, the binding energy is 0.40 eV/C; when the transition metal is Cr, the binding energy is 0.43 eV/C; when the transition metal is Mn, the binding energy is 0.51 eV/C; when the transition metal is Tc, the binding energy is 0.51 eV/C; when the transition metal is Re, the binding energy is 0.51 eV/C; when the transition metal is Fe, the binding energy is 0.44 eV/C; when the transition metal is Co, the binding energy is 0.34 eV/C; and when the transition metal is Ni, the binding energy is 0.26 eV/C. Page 5 of 11
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based composite structure (sandwich)
Materials described outside the worked examples.
graphene layer
C
transition metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Sc) | 0.24 eV/C | Sc |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,796,664Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic drawing of the graphene-based composite structure according to one embodiment. [0009]
FIG. 2 is a schematic drawing of atomic structure of the graphene-based composite structure according to one embodiment. [0010]
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
FIG. 4. When the S OC is not considered (left panel), two bands cross each other at the Fermi level, forming a perfect Dirac cone, which is the same as that in …
FIG. 5 is a flowchart of the method for making the graphene-based composite structure according to one embodiment. DETAILED DESCRIPTION [0013] The disclosure is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A graphene-based composite structure comprising: a graphene layer; a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, and the transition metal layer and the substrate are also coupled by d-p orbitals hybridization.
: The graphene-based composite structure as claimed in claim 1, wherein the graphene layer and the transition metal layer are coupled by hybridization of d orbitals of transition metal atoms in the transition metal layer and p orbitals of carbon atoms in the graphene layer.
: The graphene-based composite structure as claimed in claim 1, wherein the transition metal layer and the substrate are coupled by hybridization of d orbitals of transition metal atoms in the transition metal layer and p orbitals of silicon atoms in the substrate.
: The graphene-based composite structure as claimed in claim 1, wherein the graphene layer is a single-layer graphene.
: The graphene-based composite structure as claimed in claim 1, wherein the transition metal layer is a one-atom-thick transition metal layer.
: The graphene-based composite structure as claimed in claim 1, wherein a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Mn, Tc, Page 2 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: US₄₈₄₀₉ Re, Fe, Co and Ni.
: The graphene-based composite structure as claimed in claim 1, wherein the substrate is made of silicon carbide.
: The graphene-based composite structure as claimed in claim 1, wherein a band structure of the graphene-based composite structure is a Dirac cone.
: A graphene-based composite structure comprising: a graphene layer; Page 3 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, the transition metal layer and the substrate are also coupled by d-p orbitals hybridization, a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Tc, Re, Fe, Co and Ni, and the transition metal layer is a one-atom-thick transition metal layer.
: The graphene-based composite structure as claimed in claim 21, wherein a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Tc, Re.
: A graphene-based composite structure comprising: a graphene layer; a transition metal layer; and a substrate; wherein the graphene layer, the transition metal layer, and the substrate are stacked together in series, the graphene layer and the transition metal layer are coupled by d-p orbitals hybridization, and the transition metal layer and the substrate are also coupled by d-p orbitals hybridization, a material of the substrate is silicon carbide, a transition metal in the transition metal layer is selected from the group consisting of Sc, Ti, V, Cr, Mn, Tc, Re, Fe, Co and Ni, a binding energy between the graphene layer and a composite structure of the transition metal layer and the substrate is equal to or larger than about 0.24 eV/C.
: The graphene-based composite structure as claimed in claim 23, wherein when the transition metal is Sc, the binding energy is 0.24 eV/C; when the transition metal is Ti, the binding energy is 0.36 eV/C; Page 4 of 11 App l. No. 13/685,654 Reply to Office Action of Attorney Docket No.: when the transition metal is V, the binding energy is 0.40 eV/C; when the transition metal is Cr, the binding energy is 0.43 eV/C; when the transition metal is Mn, the binding energy is 0.51 eV/C; when the transition metal is Tc, the binding energy is 0.51 eV/C; when the transition metal is Re, the binding energy is 0.51 eV/C; when the transition metal is Fe, the binding energy is 0.44 eV/C; when the transition metal is Co, the binding energy is 0.34 eV/C; and when the transition metal is Ni, the binding energy is 0.26 eV/C. Page 5 of 11
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based composite structure (sandwich)
Materials described outside the worked examples.
graphene layer
C
transition metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Sc) | 0.24 eV/C | Sc |
Related documents with shared materials, methods, properties, or citations.
silicon carbide substrate
SiC
scandium
Sc
titanium
Ti
vanadium
V
chromium
Cr
manganese
Mn
technetium
Tc
rhenium
Re
iron
Fe
cobalt
Co
nickel
Ni
n-doped 6H-SiC(0001) substrate
6H-SiC
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
FIG. 4. When the S OC is not considered (left panel), two bands cross each other at the Fermi level, forming a perfect Dirac cone, which is the same as that in …
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Ti) | 0.36 eV/C | TiCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (V) | 0.4 eV/C | VCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Cr) | 0.43 eV/C | CrCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Mn) | 0.51 eV/C | MnCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Tc) | 0.51 eV/C | TcCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Re) | 0.51 eV/C | ReCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Fe) | 0.44 eV/C | FeCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Co) | 0.34 eV/C | CoCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Ni) | 0.26 eV/C | NiCSiC |
spin-orbit gap in band structure for Graphene/Re/SiC (with SOC) | 100 meV | ReCSiC |
spin-orbit gap in band structure for Graphene/Mn/SiC (with SOC) | 30 meV | MnCSiC |
spin-orbit gap in band structure for Graphene/Tc/SiC (with SOC) | 35 meV | TcCSiC |
Duration | 5–10 minutes | — |
Duration | 15–45 minutes | — |
Pressure | 0.001 Pa | — |
Pressure | 0–4 Pa | — |
Voltage | ≤ 0.8 V | — |
silicon carbide substrate
SiC
scandium
Sc
titanium
Ti
vanadium
V
chromium
Cr
manganese
Mn
technetium
Tc
rhenium
Re
iron
Fe
cobalt
Co
nickel
Ni
n-doped 6H-SiC(0001) substrate
6H-SiC
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
FIG. 4. When the S OC is not considered (left panel), two bands cross each other at the Fermi level, forming a perfect Dirac cone, which is the same as that in …
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Ti) | 0.36 eV/C | TiCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (V) | 0.4 eV/C | VCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Cr) | 0.43 eV/C | CrCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Mn) | 0.51 eV/C | MnCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Tc) | 0.51 eV/C | TcCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Re) | 0.51 eV/C | ReCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Fe) | 0.44 eV/C | FeCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Co) | 0.34 eV/C | CoCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Ni) | 0.26 eV/C | NiCSiC |
spin-orbit gap in band structure for Graphene/Re/SiC (with SOC) | 100 meV | ReCSiC |
spin-orbit gap in band structure for Graphene/Mn/SiC (with SOC) | 30 meV | MnCSiC |
spin-orbit gap in band structure for Graphene/Tc/SiC (with SOC) | 35 meV | TcCSiC |
Duration | 5–10 minutes | — |
Duration | 15–45 minutes | — |
Pressure | 0.001 Pa | — |
Pressure | 0–4 Pa | — |
Voltage | ≤ 0.8 V | — |
silicon carbide substrate
SiC
scandium
Sc
titanium
Ti
vanadium
V
chromium
Cr
manganese
Mn
technetium
Tc
rhenium
Re
iron
Fe
cobalt
Co
nickel
Ni
n-doped 6H-SiC(0001) substrate
6H-SiC
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
FIG. 4. When the S OC is not considered (left panel), two bands cross each other at the Fermi level, forming a perfect Dirac cone, which is the same as that in …
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Ti) | 0.36 eV/C | TiCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (V) | 0.4 eV/C | VCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Cr) | 0.43 eV/C | CrCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Mn) | 0.51 eV/C | MnCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Tc) | 0.51 eV/C | TcCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Re) | 0.51 eV/C | ReCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Fe) | 0.44 eV/C | FeCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Co) | 0.34 eV/C | CoCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Ni) | 0.26 eV/C | NiCSiC |
spin-orbit gap in band structure for Graphene/Re/SiC (with SOC) | 100 meV | ReCSiC |
spin-orbit gap in band structure for Graphene/Mn/SiC (with SOC) | 30 meV | MnCSiC |
spin-orbit gap in band structure for Graphene/Tc/SiC (with SOC) | 35 meV | TcCSiC |
Duration | 5–10 minutes | — |
Duration | 15–45 minutes | — |
Pressure | 0.001 Pa | — |
Pressure | 0–4 Pa | — |
Voltage | ≤ 0.8 V | — |
silicon carbide substrate
SiC
scandium
Sc
titanium
Ti
vanadium
V
chromium
Cr
manganese
Mn
technetium
Tc
rhenium
Re
iron
Fe
cobalt
Co
nickel
Ni
n-doped 6H-SiC(0001) substrate
6H-SiC
FIG. 3 shows a current-voltage (I-V) curve of the graphene-based composite structure 10. Evidently, the I -V characteristic of the graphene- based composite …
FIG. 4. When the S OC is not considered (left panel), two bands cross each other at the Fermi level, forming a perfect Dirac cone, which is the same as that in …
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Ti) | 0.36 eV/C | TiCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (V) | 0.4 eV/C | VCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Cr) | 0.43 eV/C | CrCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Mn) | 0.51 eV/C | MnCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Tc) | 0.51 eV/C | TcCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Re) | 0.51 eV/C | ReCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Fe) | 0.44 eV/C | FeCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Co) | 0.34 eV/C | CoCSiC |
binding energy between graphene layer and composite structure of transition metal layer and SiC substrate (Ni) | 0.26 eV/C | NiCSiC |
spin-orbit gap in band structure for Graphene/Re/SiC (with SOC) | 100 meV | ReCSiC |
spin-orbit gap in band structure for Graphene/Mn/SiC (with SOC) | 30 meV | MnCSiC |
spin-orbit gap in band structure for Graphene/Tc/SiC (with SOC) | 35 meV | TcCSiC |
Duration | 5–10 minutes | — |
Duration | 15–45 minutes | — |
Pressure | 0.001 Pa | — |
Pressure | 0–4 Pa | — |
Voltage | ≤ 0.8 V | — |