Patent
US 10,124,565GRAPHENE CONDUCTIVE FILM AND METHOD FOR FORMING THE SAME, AND FLEXIBLE TOUCH DEVICE
Yunping DI
US
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Patent
Atlas literature
Patent
US 10,124,565Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene conductive film, comprising: growing a graphene layer on a metal catalytic substrate; coating a polyamide acid (PAA) solution onto the graphene layer, and curing the PAA solution so as to form a polyimide (P I) film; and removing the metal catalytic substrate so as to form the graphene conductive film with the P I film; wherein, prior to removing the metal catalytic substrate, the method further comprises coating a protective solution onto a surface of the P I film and curing the protective solution so as to form an optical protective layer; wherein a refractive index of the optical protective layer is equal to a refractive index of the P I film. Currently amended
The method according to claim 1, wherein the PAA solution is a high-temperature-resistant PAA solution or a transparent PAA solution. Previously presented
The method according to claim 1, wherein the PAA solution is cured by being heated or being subjected to a chemical reaction. Original
The method according to claim 1, wherein a thickness of the P I film is larger than 10 microns and smaller than 30 microns. Original
The method according to claim 1, wherein a thickness of the graphene layer is smaller than 1 nanometer. Previously presented
The method according to claim 1, wherein a thickness of the graphene conductive film is larger than 10 microns and smaller than 30 microns. Original
The method according to claim 1, wherein a thickness of the graphene conductive film is larger than 10 microns and smaller than 30 microns. Previously presented
The method according to claim 1, wherein the graphene layer is grown on the metal catalytic substrate by chemical vapor deposition. Original
(Withdrawn- Currently Amended) A graphene conductive film formed by the method according to claim 1, comprising a graphene layer and a polyimide (P I) film arranged on the graphene layer, wherein the graphene conductive film further comprises an optical protective layer arranged on the P I film, and a refractive index of the optical protective layer is equal to a refractive index of the P I film. Currently amended
The method according to claim 1, wherein the PAA solution is a high-temperature-resistant PAA solution or a transparent PAA solution. Previously presented
The method according to claim 1, wherein a thickness of the graphene layer is smaller than 1 nanometer. Previously presented
Canceled
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene conductive film
Materials described outside the worked examples.
graphene
C
polyamide acid (PAA) solution
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of optical protective layer equals refractive index of PI film | — | optical protective layer |
PI film thickness | 10–30 microns |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,124,565Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene conductive film, comprising: growing a graphene layer on a metal catalytic substrate; coating a polyamide acid (PAA) solution onto the graphene layer, and curing the PAA solution so as to form a polyimide (P I) film; and removing the metal catalytic substrate so as to form the graphene conductive film with the P I film; wherein, prior to removing the metal catalytic substrate, the method further comprises coating a protective solution onto a surface of the P I film and curing the protective solution so as to form an optical protective layer; wherein a refractive index of the optical protective layer is equal to a refractive index of the P I film. Currently amended
The method according to claim 1, wherein the PAA solution is a high-temperature-resistant PAA solution or a transparent PAA solution. Previously presented
The method according to claim 1, wherein the PAA solution is cured by being heated or being subjected to a chemical reaction. Original
The method according to claim 1, wherein a thickness of the P I film is larger than 10 microns and smaller than 30 microns. Original
The method according to claim 1, wherein a thickness of the graphene layer is smaller than 1 nanometer. Previously presented
The method according to claim 1, wherein a thickness of the graphene conductive film is larger than 10 microns and smaller than 30 microns. Original
The method according to claim 1, wherein a thickness of the graphene conductive film is larger than 10 microns and smaller than 30 microns. Previously presented
The method according to claim 1, wherein the graphene layer is grown on the metal catalytic substrate by chemical vapor deposition. Original
(Withdrawn- Currently Amended) A graphene conductive film formed by the method according to claim 1, comprising a graphene layer and a polyimide (P I) film arranged on the graphene layer, wherein the graphene conductive film further comprises an optical protective layer arranged on the P I film, and a refractive index of the optical protective layer is equal to a refractive index of the P I film. Currently amended
The method according to claim 1, wherein the PAA solution is a high-temperature-resistant PAA solution or a transparent PAA solution. Previously presented
The method according to claim 1, wherein a thickness of the graphene layer is smaller than 1 nanometer. Previously presented
Canceled
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene conductive film
Materials described outside the worked examples.
graphene
C
polyamide acid (PAA) solution
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of optical protective layer equals refractive index of PI film | — | optical protective layer |
PI film thickness | 10–30 microns |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,124,565Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene conductive film, comprising: growing a graphene layer on a metal catalytic substrate; coating a polyamide acid (PAA) solution onto the graphene layer, and curing the PAA solution so as to form a polyimide (P I) film; and removing the metal catalytic substrate so as to form the graphene conductive film with the P I film; wherein, prior to removing the metal catalytic substrate, the method further comprises coating a protective solution onto a surface of the P I film and curing the protective solution so as to form an optical protective layer; wherein a refractive index of the optical protective layer is equal to a refractive index of the P I film. Currently amended
The method according to claim 1, wherein the PAA solution is a high-temperature-resistant PAA solution or a transparent PAA solution. Previously presented
The method according to claim 1, wherein the PAA solution is cured by being heated or being subjected to a chemical reaction. Original
The method according to claim 1, wherein a thickness of the P I film is larger than 10 microns and smaller than 30 microns. Original
The method according to claim 1, wherein a thickness of the graphene layer is smaller than 1 nanometer. Previously presented
The method according to claim 1, wherein a thickness of the graphene conductive film is larger than 10 microns and smaller than 30 microns. Original
The method according to claim 1, wherein a thickness of the graphene conductive film is larger than 10 microns and smaller than 30 microns. Previously presented
The method according to claim 1, wherein the graphene layer is grown on the metal catalytic substrate by chemical vapor deposition. Original
(Withdrawn- Currently Amended) A graphene conductive film formed by the method according to claim 1, comprising a graphene layer and a polyimide (P I) film arranged on the graphene layer, wherein the graphene conductive film further comprises an optical protective layer arranged on the P I film, and a refractive index of the optical protective layer is equal to a refractive index of the P I film. Currently amended
The method according to claim 1, wherein the PAA solution is a high-temperature-resistant PAA solution or a transparent PAA solution. Previously presented
The method according to claim 1, wherein a thickness of the graphene layer is smaller than 1 nanometer. Previously presented
Canceled
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene conductive film
Materials described outside the worked examples.
graphene
C
polyamide acid (PAA) solution
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of optical protective layer equals refractive index of PI film | — | optical protective layer |
PI film thickness | 10–30 microns |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,124,565Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene conductive film, comprising: growing a graphene layer on a metal catalytic substrate; coating a polyamide acid (PAA) solution onto the graphene layer, and curing the PAA solution so as to form a polyimide (P I) film; and removing the metal catalytic substrate so as to form the graphene conductive film with the P I film; wherein, prior to removing the metal catalytic substrate, the method further comprises coating a protective solution onto a surface of the P I film and curing the protective solution so as to form an optical protective layer; wherein a refractive index of the optical protective layer is equal to a refractive index of the P I film. Currently amended
The method according to claim 1, wherein the PAA solution is a high-temperature-resistant PAA solution or a transparent PAA solution. Previously presented
The method according to claim 1, wherein the PAA solution is cured by being heated or being subjected to a chemical reaction. Original
The method according to claim 1, wherein a thickness of the P I film is larger than 10 microns and smaller than 30 microns. Original
The method according to claim 1, wherein a thickness of the graphene layer is smaller than 1 nanometer. Previously presented
The method according to claim 1, wherein a thickness of the graphene conductive film is larger than 10 microns and smaller than 30 microns. Original
The method according to claim 1, wherein a thickness of the graphene conductive film is larger than 10 microns and smaller than 30 microns. Previously presented
The method according to claim 1, wherein the graphene layer is grown on the metal catalytic substrate by chemical vapor deposition. Original
(Withdrawn- Currently Amended) A graphene conductive film formed by the method according to claim 1, comprising a graphene layer and a polyimide (P I) film arranged on the graphene layer, wherein the graphene conductive film further comprises an optical protective layer arranged on the P I film, and a refractive index of the optical protective layer is equal to a refractive index of the P I film. Currently amended
The method according to claim 1, wherein the PAA solution is a high-temperature-resistant PAA solution or a transparent PAA solution. Previously presented
The method according to claim 1, wherein a thickness of the graphene layer is smaller than 1 nanometer. Previously presented
Canceled
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene conductive film
Materials described outside the worked examples.
graphene
C
polyamide acid (PAA) solution
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of optical protective layer equals refractive index of PI film | — | optical protective layer |
PI film thickness | 10–30 microns |
Related documents with shared materials, methods, properties, or citations.
polyimide (PI) film
optical protective layer
metal catalytic substrate
copper foil
Cu
methane
CH₄
graphene layer thickness | ≤ 1 nanometer | C |
graphene conductive film total thickness | 10–30 microns | — |
graphene light absorptivity | 2.3 % | C |
graphene thermal conductivity coefficient | 5300 W/m·K | C |
graphene electronic mobility at normal temperature | ≥ 15000 cm2/V·s | C |
graphene electrical resistivity | 0.000001 Ω·cm | C |
graphene monolayer thickness | 0.335 nanometer | C |
Duration | 2–10 minutes | — |
Duration | 30–60 minutes | — |
Thickness | 45–55 nm | — |
Pressure | 400–600 mTorr | — |
Duration | 5–10 minutes | — |
Thickness | 50–300 µm | — |
polyimide (PI) film
optical protective layer
metal catalytic substrate
copper foil
Cu
methane
CH₄
graphene layer thickness | ≤ 1 nanometer | C |
graphene conductive film total thickness | 10–30 microns | — |
graphene light absorptivity | 2.3 % | C |
graphene thermal conductivity coefficient | 5300 W/m·K | C |
graphene electronic mobility at normal temperature | ≥ 15000 cm2/V·s | C |
graphene electrical resistivity | 0.000001 Ω·cm | C |
graphene monolayer thickness | 0.335 nanometer | C |
Duration | 2–10 minutes | — |
Duration | 30–60 minutes | — |
Thickness | 45–55 nm | — |
Pressure | 400–600 mTorr | — |
Duration | 5–10 minutes | — |
Thickness | 50–300 µm | — |
polyimide (PI) film
optical protective layer
metal catalytic substrate
copper foil
Cu
methane
CH₄
graphene layer thickness | ≤ 1 nanometer | C |
graphene conductive film total thickness | 10–30 microns | — |
graphene light absorptivity | 2.3 % | C |
graphene thermal conductivity coefficient | 5300 W/m·K | C |
graphene electronic mobility at normal temperature | ≥ 15000 cm2/V·s | C |
graphene electrical resistivity | 0.000001 Ω·cm | C |
graphene monolayer thickness | 0.335 nanometer | C |
Duration | 2–10 minutes | — |
Duration | 30–60 minutes | — |
Thickness | 45–55 nm | — |
Pressure | 400–600 mTorr | — |
Duration | 5–10 minutes | — |
Thickness | 50–300 µm | — |
polyimide (PI) film
optical protective layer
metal catalytic substrate
copper foil
Cu
methane
CH₄
graphene layer thickness | ≤ 1 nanometer | C |
graphene conductive film total thickness | 10–30 microns | — |
graphene light absorptivity | 2.3 % | C |
graphene thermal conductivity coefficient | 5300 W/m·K | C |
graphene electronic mobility at normal temperature | ≥ 15000 cm2/V·s | C |
graphene electrical resistivity | 0.000001 Ω·cm | C |
graphene monolayer thickness | 0.335 nanometer | C |
Duration | 2–10 minutes | — |
Duration | 30–60 minutes | — |
Thickness | 45–55 nm | — |
Pressure | 400–600 mTorr | — |
Duration | 5–10 minutes | — |
Thickness | 50–300 µm | — |