Patent
US 11,117,801transparent substrate
boron nitride nanotubes
BN
titanium oxide nanotube or fullerene
TiO₂
p-type dopant
diborane
B₂H₆
n-type dopant
ammonia
NH₃
quantum dots
methane
CH₄
hydrogen
H₂
copper substrate
Cu
ferric chloride
FeCl₃
polydimethylsiloxane
polymethylmethacrylate
graphene layer |
Thickness | 0–100000000 nm | — |
Pressure | 0.2–0.4 atm | — |
Thickness | 300–1000 nm | — |
Thickness | 1–10 mm | — |
Thickness | 2–8 mm | — |
Thickness | 3–5 mm | — |
Thickness | 40000–80000 cm | — |
Thickness | 45000–70000 cm | — |
Thickness | 50000–60000 cm | — |
Duration | 2–4 minutes | — |
Thickness | 3–10 nm | — |
Thickness | 0.1–10 nm | — |
Temperature | 20–30 °C | — |
Thickness | 350–900 nm | — |
Thickness | 400–800 nm | — |
Thickness | 0.5–8 nm | — |
Thickness | 2–5 nm | — |
Thickness | 3–20 nm | — |
Thickness | 4–15 nm | — |
Thickness | 5–10 nm | — |
Thickness | 2–8 nm | — |
Temperature | 22–28 °C | — |
Duration | 5–500 sec | — |
Duration | 50–100 sec | — |
Pressure | 2–10 Torr | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 4–6 minutes | — |
Thickness | ≤ 40000 cm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 15000 cm | — |
Thickness | ≥ 40000 cm | — |
Thickness | ≥ 30000 cm | — |
Temperature | ≥ 900 °C | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 10 nm | — |
HIGH-THROUGHPUT GRAPHENE PRINTING AND SELECTIVE TRANSFER USING A LOCALIZED LASER HEATING TECHNIQUE
transparent substrate
boron nitride nanotubes
BN
titanium oxide nanotube or fullerene
TiO₂
p-type dopant
diborane
B₂H₆
n-type dopant
ammonia
NH₃
quantum dots
methane
CH₄
hydrogen
H₂
copper substrate
Cu
ferric chloride
FeCl₃
polydimethylsiloxane
polymethylmethacrylate
graphene layer |
Thickness | 0–100000000 nm | — |
Pressure | 0.2–0.4 atm | — |
Thickness | 300–1000 nm | — |
Thickness | 1–10 mm | — |
Thickness | 2–8 mm | — |
Thickness | 3–5 mm | — |
Thickness | 40000–80000 cm | — |
Thickness | 45000–70000 cm | — |
Thickness | 50000–60000 cm | — |
Duration | 2–4 minutes | — |
Thickness | 3–10 nm | — |
Thickness | 0.1–10 nm | — |
Temperature | 20–30 °C | — |
Thickness | 350–900 nm | — |
Thickness | 400–800 nm | — |
Thickness | 0.5–8 nm | — |
Thickness | 2–5 nm | — |
Thickness | 3–20 nm | — |
Thickness | 4–15 nm | — |
Thickness | 5–10 nm | — |
Thickness | 2–8 nm | — |
Temperature | 22–28 °C | — |
Duration | 5–500 sec | — |
Duration | 50–100 sec | — |
Pressure | 2–10 Torr | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 4–6 minutes | — |
Thickness | ≤ 40000 cm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 15000 cm | — |
Thickness | ≥ 40000 cm | — |
Thickness | ≥ 30000 cm | — |
Temperature | ≥ 900 °C | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 10 nm | — |
HIGH-THROUGHPUT GRAPHENE PRINTING AND SELECTIVE TRANSFER USING A LOCALIZED LASER HEATING TECHNIQUE
transparent substrate
boron nitride nanotubes
BN
titanium oxide nanotube or fullerene
TiO₂
p-type dopant
diborane
B₂H₆
n-type dopant
ammonia
NH₃
quantum dots
methane
CH₄
hydrogen
H₂
copper substrate
Cu
ferric chloride
FeCl₃
polydimethylsiloxane
polymethylmethacrylate
graphene layer |
Thickness | 0–100000000 nm | — |
Pressure | 0.2–0.4 atm | — |
Thickness | 300–1000 nm | — |
Thickness | 1–10 mm | — |
Thickness | 2–8 mm | — |
Thickness | 3–5 mm | — |
Thickness | 40000–80000 cm | — |
Thickness | 45000–70000 cm | — |
Thickness | 50000–60000 cm | — |
Duration | 2–4 minutes | — |
Thickness | 3–10 nm | — |
Thickness | 0.1–10 nm | — |
Temperature | 20–30 °C | — |
Thickness | 350–900 nm | — |
Thickness | 400–800 nm | — |
Thickness | 0.5–8 nm | — |
Thickness | 2–5 nm | — |
Thickness | 3–20 nm | — |
Thickness | 4–15 nm | — |
Thickness | 5–10 nm | — |
Thickness | 2–8 nm | — |
Temperature | 22–28 °C | — |
Duration | 5–500 sec | — |
Duration | 50–100 sec | — |
Pressure | 2–10 Torr | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 4–6 minutes | — |
Thickness | ≤ 40000 cm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 15000 cm | — |
Thickness | ≥ 40000 cm | — |
Thickness | ≥ 30000 cm | — |
Temperature | ≥ 900 °C | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 10 nm | — |
HIGH-THROUGHPUT GRAPHENE PRINTING AND SELECTIVE TRANSFER USING A LOCALIZED LASER HEATING TECHNIQUE
transparent substrate
boron nitride nanotubes
BN
titanium oxide nanotube or fullerene
TiO₂
p-type dopant
diborane
B₂H₆
n-type dopant
ammonia
NH₃
quantum dots
methane
CH₄
hydrogen
H₂
copper substrate
Cu
ferric chloride
FeCl₃
polydimethylsiloxane
polymethylmethacrylate
graphene layer |
Thickness | 0–100000000 nm | — |
Pressure | 0.2–0.4 atm | — |
Thickness | 300–1000 nm | — |
Thickness | 1–10 mm | — |
Thickness | 2–8 mm | — |
Thickness | 3–5 mm | — |
Thickness | 40000–80000 cm | — |
Thickness | 45000–70000 cm | — |
Thickness | 50000–60000 cm | — |
Duration | 2–4 minutes | — |
Thickness | 3–10 nm | — |
Thickness | 0.1–10 nm | — |
Temperature | 20–30 °C | — |
Thickness | 350–900 nm | — |
Thickness | 400–800 nm | — |
Thickness | 0.5–8 nm | — |
Thickness | 2–5 nm | — |
Thickness | 3–20 nm | — |
Thickness | 4–15 nm | — |
Thickness | 5–10 nm | — |
Thickness | 2–8 nm | — |
Temperature | 22–28 °C | — |
Duration | 5–500 sec | — |
Duration | 50–100 sec | — |
Pressure | 2–10 Torr | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 4–6 minutes | — |
Thickness | ≤ 40000 cm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 15000 cm | — |
Thickness | ≥ 40000 cm | — |
Thickness | ≥ 30000 cm | — |
Temperature | ≥ 900 °C | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 10 nm | — |
HIGH-THROUGHPUT GRAPHENE PRINTING AND SELECTIVE TRANSFER USING A LOCALIZED LASER HEATING TECHNIQUE