Patent
US 8,773,636OPTICAL LITHOGRAPHY USING GRAPHENE CONTRAST ENHANCEMENT LAYER
THOMAS A. YAGER
US
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Patent
Atlas literature
Patent
US 8,773,636Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system effective to form a structure, the system comprising: a processor; a light source arranged in communication with the processor; a mask, wherein the mask includes a pattern; a substrate; a photoresist layer on the substrate; and a graphene layer on the photoresist layer; wherein the processor is configured effective to: apply light through the mask to the graphene layer, wherein the light is effective to form the pattern on the photoresist layer though the graphene layer; and remove the graphene layer from the photoresist layer with use of a dry etching technique.
The system as recited in claim 1, f u rther comprising an optical system disposed between the mask and the graphene layer, wherein the optical system is configured effective to refract the light and change a magnification of the pattern between the mask and the substrate.
The system as recited in claim 1, further comprising: 14 Attorney Docket No. 1574-0023 a first table, wherein the mask is disposed on the first table; a second table, wherein the substrate is disposed on the second table; and wherein the first table is movable with respect to the second table.
The system as recited in claim 1, wherein the light source is effective to output light with a wavelength of about 157nm.
The system as recited in claim 1, wherein the graphene layer has a height of about one atom.
The system as recited in claim 1, wherein the graphene layer is effective to absorb at least some of the light to function as an antireflective layer.
The system as recited in claim 1, wherein the graphene layer includes a bandgap of approximately 0.1 EV.
The system as recited in claim 1, wherein the processor is further effective to control application of an oxygen plasma to the graphene layer, wherein the oxygen plasma is effective to remove the graphene layer.
The system as recited in claim 1, wherein: the graphene layer has a first width and a first length; the photoresist layer has a second width and a second length; the first width is substantially equal to the second width; the first length is substantially equal to the second length; and 16 Attorney Docket No. 1574-0023 the graphene layer has a height of about one atom.
The system as recited in claim 1, wherein the graphene layer is effective to absorb at least some of the light to function as an antireflective layer and the graphene layer includes a bandgap of approximately 0.1 EV.
A structure comprising: a substrate; a patterned photoresist layer on the substrate; and an exposed graphene layer on the patterned photoresist layer, wherein the patterned photoresist layer is formed by application of a light through a mask that includes the pattern and application of the light through the exposed graphene layer prior to removal of the exposed graphene from the photoresist layer with use of a dry etching technique.
The structure as recited in claim 16, wherein the substrate includes a silylating agent.
The structure as recited in claim 16, wherein: the graphene layer has a first width and a first length; the photoresist layer has a second width and a second length; the first width is substantially equal to the second width; and the first length is substantially equal to the second length.
The structure as recited in claim 16, wherein the dry etching technique includes application of an oxygen plasma to the exposed graphene layer, wherein the oxygen plasma is effective to remove the graphene layer.
A system effective to form a structure, the system comprising: a processor; a light source arranged in communication with the processor; and a mask, wherein the mask includes a pattern; wherein the processor is configured effective to: apply light through the mask to a graphene layer, wherein the light is effective to form the pattern on a photoresist layer though the graphene layer; and remove the graphene l ayer from the photoresist l ayer with use of a dry etching technique.
Layer stacks claimed or described, ordered top of device to substrate.
optical lithography system with graphene contrast enhancement layer
patterned photolithography structure with exposed graphene layer
Materials described outside the worked examples.
graphene
C
photoresist
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene bandgap | 0.1 eV | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,773,636Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system effective to form a structure, the system comprising: a processor; a light source arranged in communication with the processor; a mask, wherein the mask includes a pattern; a substrate; a photoresist layer on the substrate; and a graphene layer on the photoresist layer; wherein the processor is configured effective to: apply light through the mask to the graphene layer, wherein the light is effective to form the pattern on the photoresist layer though the graphene layer; and remove the graphene layer from the photoresist layer with use of a dry etching technique.
The system as recited in claim 1, f u rther comprising an optical system disposed between the mask and the graphene layer, wherein the optical system is configured effective to refract the light and change a magnification of the pattern between the mask and the substrate.
The system as recited in claim 1, further comprising: 14 Attorney Docket No. 1574-0023 a first table, wherein the mask is disposed on the first table; a second table, wherein the substrate is disposed on the second table; and wherein the first table is movable with respect to the second table.
The system as recited in claim 1, wherein the light source is effective to output light with a wavelength of about 157nm.
The system as recited in claim 1, wherein the graphene layer has a height of about one atom.
The system as recited in claim 1, wherein the graphene layer is effective to absorb at least some of the light to function as an antireflective layer.
The system as recited in claim 1, wherein the graphene layer includes a bandgap of approximately 0.1 EV.
The system as recited in claim 1, wherein the processor is further effective to control application of an oxygen plasma to the graphene layer, wherein the oxygen plasma is effective to remove the graphene layer.
The system as recited in claim 1, wherein: the graphene layer has a first width and a first length; the photoresist layer has a second width and a second length; the first width is substantially equal to the second width; the first length is substantially equal to the second length; and 16 Attorney Docket No. 1574-0023 the graphene layer has a height of about one atom.
The system as recited in claim 1, wherein the graphene layer is effective to absorb at least some of the light to function as an antireflective layer and the graphene layer includes a bandgap of approximately 0.1 EV.
A structure comprising: a substrate; a patterned photoresist layer on the substrate; and an exposed graphene layer on the patterned photoresist layer, wherein the patterned photoresist layer is formed by application of a light through a mask that includes the pattern and application of the light through the exposed graphene layer prior to removal of the exposed graphene from the photoresist layer with use of a dry etching technique.
The structure as recited in claim 16, wherein the substrate includes a silylating agent.
The structure as recited in claim 16, wherein: the graphene layer has a first width and a first length; the photoresist layer has a second width and a second length; the first width is substantially equal to the second width; and the first length is substantially equal to the second length.
The structure as recited in claim 16, wherein the dry etching technique includes application of an oxygen plasma to the exposed graphene layer, wherein the oxygen plasma is effective to remove the graphene layer.
A system effective to form a structure, the system comprising: a processor; a light source arranged in communication with the processor; and a mask, wherein the mask includes a pattern; wherein the processor is configured effective to: apply light through the mask to a graphene layer, wherein the light is effective to form the pattern on a photoresist layer though the graphene layer; and remove the graphene l ayer from the photoresist l ayer with use of a dry etching technique.
Layer stacks claimed or described, ordered top of device to substrate.
optical lithography system with graphene contrast enhancement layer
patterned photolithography structure with exposed graphene layer
Materials described outside the worked examples.
graphene
C
photoresist
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene bandgap | 0.1 eV | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,773,636Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system effective to form a structure, the system comprising: a processor; a light source arranged in communication with the processor; a mask, wherein the mask includes a pattern; a substrate; a photoresist layer on the substrate; and a graphene layer on the photoresist layer; wherein the processor is configured effective to: apply light through the mask to the graphene layer, wherein the light is effective to form the pattern on the photoresist layer though the graphene layer; and remove the graphene layer from the photoresist layer with use of a dry etching technique.
The system as recited in claim 1, f u rther comprising an optical system disposed between the mask and the graphene layer, wherein the optical system is configured effective to refract the light and change a magnification of the pattern between the mask and the substrate.
The system as recited in claim 1, further comprising: 14 Attorney Docket No. 1574-0023 a first table, wherein the mask is disposed on the first table; a second table, wherein the substrate is disposed on the second table; and wherein the first table is movable with respect to the second table.
The system as recited in claim 1, wherein the light source is effective to output light with a wavelength of about 157nm.
The system as recited in claim 1, wherein the graphene layer has a height of about one atom.
The system as recited in claim 1, wherein the graphene layer is effective to absorb at least some of the light to function as an antireflective layer.
The system as recited in claim 1, wherein the graphene layer includes a bandgap of approximately 0.1 EV.
The system as recited in claim 1, wherein the processor is further effective to control application of an oxygen plasma to the graphene layer, wherein the oxygen plasma is effective to remove the graphene layer.
The system as recited in claim 1, wherein: the graphene layer has a first width and a first length; the photoresist layer has a second width and a second length; the first width is substantially equal to the second width; the first length is substantially equal to the second length; and 16 Attorney Docket No. 1574-0023 the graphene layer has a height of about one atom.
The system as recited in claim 1, wherein the graphene layer is effective to absorb at least some of the light to function as an antireflective layer and the graphene layer includes a bandgap of approximately 0.1 EV.
A structure comprising: a substrate; a patterned photoresist layer on the substrate; and an exposed graphene layer on the patterned photoresist layer, wherein the patterned photoresist layer is formed by application of a light through a mask that includes the pattern and application of the light through the exposed graphene layer prior to removal of the exposed graphene from the photoresist layer with use of a dry etching technique.
The structure as recited in claim 16, wherein the substrate includes a silylating agent.
The structure as recited in claim 16, wherein: the graphene layer has a first width and a first length; the photoresist layer has a second width and a second length; the first width is substantially equal to the second width; and the first length is substantially equal to the second length.
The structure as recited in claim 16, wherein the dry etching technique includes application of an oxygen plasma to the exposed graphene layer, wherein the oxygen plasma is effective to remove the graphene layer.
A system effective to form a structure, the system comprising: a processor; a light source arranged in communication with the processor; and a mask, wherein the mask includes a pattern; wherein the processor is configured effective to: apply light through the mask to a graphene layer, wherein the light is effective to form the pattern on a photoresist layer though the graphene layer; and remove the graphene l ayer from the photoresist l ayer with use of a dry etching technique.
Layer stacks claimed or described, ordered top of device to substrate.
optical lithography system with graphene contrast enhancement layer
patterned photolithography structure with exposed graphene layer
Materials described outside the worked examples.
graphene
C
photoresist
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene bandgap | 0.1 eV | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,773,636Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system effective to form a structure, the system comprising: a processor; a light source arranged in communication with the processor; a mask, wherein the mask includes a pattern; a substrate; a photoresist layer on the substrate; and a graphene layer on the photoresist layer; wherein the processor is configured effective to: apply light through the mask to the graphene layer, wherein the light is effective to form the pattern on the photoresist layer though the graphene layer; and remove the graphene layer from the photoresist layer with use of a dry etching technique.
The system as recited in claim 1, f u rther comprising an optical system disposed between the mask and the graphene layer, wherein the optical system is configured effective to refract the light and change a magnification of the pattern between the mask and the substrate.
The system as recited in claim 1, further comprising: 14 Attorney Docket No. 1574-0023 a first table, wherein the mask is disposed on the first table; a second table, wherein the substrate is disposed on the second table; and wherein the first table is movable with respect to the second table.
The system as recited in claim 1, wherein the light source is effective to output light with a wavelength of about 157nm.
The system as recited in claim 1, wherein the graphene layer has a height of about one atom.
The system as recited in claim 1, wherein the graphene layer is effective to absorb at least some of the light to function as an antireflective layer.
The system as recited in claim 1, wherein the graphene layer includes a bandgap of approximately 0.1 EV.
The system as recited in claim 1, wherein the processor is further effective to control application of an oxygen plasma to the graphene layer, wherein the oxygen plasma is effective to remove the graphene layer.
The system as recited in claim 1, wherein: the graphene layer has a first width and a first length; the photoresist layer has a second width and a second length; the first width is substantially equal to the second width; the first length is substantially equal to the second length; and 16 Attorney Docket No. 1574-0023 the graphene layer has a height of about one atom.
The system as recited in claim 1, wherein the graphene layer is effective to absorb at least some of the light to function as an antireflective layer and the graphene layer includes a bandgap of approximately 0.1 EV.
A structure comprising: a substrate; a patterned photoresist layer on the substrate; and an exposed graphene layer on the patterned photoresist layer, wherein the patterned photoresist layer is formed by application of a light through a mask that includes the pattern and application of the light through the exposed graphene layer prior to removal of the exposed graphene from the photoresist layer with use of a dry etching technique.
The structure as recited in claim 16, wherein the substrate includes a silylating agent.
The structure as recited in claim 16, wherein: the graphene layer has a first width and a first length; the photoresist layer has a second width and a second length; the first width is substantially equal to the second width; and the first length is substantially equal to the second length.
The structure as recited in claim 16, wherein the dry etching technique includes application of an oxygen plasma to the exposed graphene layer, wherein the oxygen plasma is effective to remove the graphene layer.
A system effective to form a structure, the system comprising: a processor; a light source arranged in communication with the processor; and a mask, wherein the mask includes a pattern; wherein the processor is configured effective to: apply light through the mask to a graphene layer, wherein the light is effective to form the pattern on a photoresist layer though the graphene layer; and remove the graphene l ayer from the photoresist l ayer with use of a dry etching technique.
Layer stacks claimed or described, ordered top of device to substrate.
optical lithography system with graphene contrast enhancement layer
patterned photolithography structure with exposed graphene layer
Materials described outside the worked examples.
graphene
C
photoresist
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene bandgap | 0.1 eV | C |
Related documents with shared materials, methods, properties, or citations.
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