Patent
US 9,859,379GRAPHENE LAYER TRANSFER
Ageeth A. Bol
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,859,379Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a vertical cross sectional view of an initial structure including a layer of graphene located on an exposed surface of a copper foil that can be …
FIG. 2 after removing the copper foil and exposing a surface of the layer of graphene. [0015]
FIG. 3 is a vertical cross sectional view of the first layered structure of
FIG. 4 is a vertical cross sectional view of the structure of SIG. 3 after forming an oxide bonding enhancement dielectric layer on the exposed surface of the …
FIG. 5 is a vertical cross sectional view of a second layered structure including a receiver substrate and a dielectric oxide layer that can be used in the …
FIG. 6 is a vertical cross sectional view after bonding the first layered structure shown in
FIG. 7 is a vertical cross sectional view of the structure shown in
FIG. 8 in accordance with an embodiment of the present disclosure. [0021]
FIG. 9 is a vertical cross sectional view of an exemplary semiconductor device that includes the structure shown in
FIG. 10 is a vertical cross sectional view of another exemplary semiconductor device that includes the structure shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of transferring a graphene layer from one substrate to another substrate, said method comprising: providing a first layered structure including, from bottom to top, a copper foil, a layer of graphene, an adhesive layer and a carrier substrate; removing said copper foil exposing a surface of said layer of graphene; forming an oxide bonding enhancement dielectric layer on said exposed surface of said layer of graphene; providing a second layered structure including a receiver substrate and a dielectric oxide layer; bonding an exposed surface of said dielectric oxide layer of said second layered structure to an exposed surface of said oxide bonding enhancement dielectric layer; and removing said carrier substrate and said adhesive layer exposing said layer of graphene.
The method of Claim 1, wherein said providing said first layered structure includes: forming said layer of graphene on an exposed surface of said copper foil; and bonding a structure including said adhesive layer and said carrier substrate to an exposed surface of said layer of graphene.
The method of Claim 1, wherein said forming said oxide bonding enhancement dielectric layer comprises spin-coating a protective polymeric material on said exposed surface of said layer of graphene.
The method of Claim 1, wherein said bonding said exposed surface of said dielectric oxide layer of said second layered structure to said exposed surface of said oxide bonding enhancement dielectric layer forms an oxide-oxide bonded between said dielectric oxide layer and said exposed surface of said oxide bonding enhancement dielectric layer.
The method of Claim 1, wherein said dielectric oxide layer of said second layered structure comprises a same dielectric material as said oxide bonding enhancement dielectric layer.
The method of Claim 1, wherein said removing said carrier substrate comprises laser ablation.
The method of Claim 1, wherein said removing said adhesive layer comprises a chemical stripping process.
The method of Claim 1, wherein said removing said copper foil comprises wet etching.
The method of Claim 1, wherein said oxide bonding enhancement dielectric layer comprises hydrogen silsesquioxane.
The method of Claim 1, wherein said oxide bonding enhancement dielectric layer comprises methyl silsesquioxane
The method of Claim 1, wherein said carrier substrate comprises glass.
The method of Claim 1, wherein said receiver substrate comprises a semiconductor material.
The method of Claim 1, wherein said adhesive layer comprises a laser ablatable or UV releaseable adhesive.
The method of Claim 1, wherein said adhesive a spin-on coating process.
The method of Claim 1, wherein said forming comprises providing a liquid dielectric material enhancement dielectric layer upon application to liquid dielectric material precursor onto said layer
The method of Claim 1, wherein said dielectric that different from said oxide bonding enhancement of 23 layer is applied to said carrier surface utilizing oxide bonding enhancement dielectric layer precursor which forms said oxide bonding said layer of graphene, and depositing said of graphene. oxide layer comprises a dielectric material dielectric layer. YO R₉₂₀₁₂₀₆₁₁US₂ Page 22
Layer stacks claimed or described, ordered top of device to substrate.
first layered structure (graphene on copper foil with carrier)
second layered structure (receiver substrate with dielectric oxide)
Materials described outside the worked examples.
copper foil
Cu
graphene layer
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–900 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,859,379Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a vertical cross sectional view of an initial structure including a layer of graphene located on an exposed surface of a copper foil that can be …
FIG. 2 after removing the copper foil and exposing a surface of the layer of graphene. [0015]
FIG. 3 is a vertical cross sectional view of the first layered structure of
FIG. 4 is a vertical cross sectional view of the structure of SIG. 3 after forming an oxide bonding enhancement dielectric layer on the exposed surface of the …
FIG. 5 is a vertical cross sectional view of a second layered structure including a receiver substrate and a dielectric oxide layer that can be used in the …
FIG. 6 is a vertical cross sectional view after bonding the first layered structure shown in
FIG. 7 is a vertical cross sectional view of the structure shown in
FIG. 8 in accordance with an embodiment of the present disclosure. [0021]
FIG. 9 is a vertical cross sectional view of an exemplary semiconductor device that includes the structure shown in
FIG. 10 is a vertical cross sectional view of another exemplary semiconductor device that includes the structure shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of transferring a graphene layer from one substrate to another substrate, said method comprising: providing a first layered structure including, from bottom to top, a copper foil, a layer of graphene, an adhesive layer and a carrier substrate; removing said copper foil exposing a surface of said layer of graphene; forming an oxide bonding enhancement dielectric layer on said exposed surface of said layer of graphene; providing a second layered structure including a receiver substrate and a dielectric oxide layer; bonding an exposed surface of said dielectric oxide layer of said second layered structure to an exposed surface of said oxide bonding enhancement dielectric layer; and removing said carrier substrate and said adhesive layer exposing said layer of graphene.
The method of Claim 1, wherein said providing said first layered structure includes: forming said layer of graphene on an exposed surface of said copper foil; and bonding a structure including said adhesive layer and said carrier substrate to an exposed surface of said layer of graphene.
The method of Claim 1, wherein said forming said oxide bonding enhancement dielectric layer comprises spin-coating a protective polymeric material on said exposed surface of said layer of graphene.
The method of Claim 1, wherein said bonding said exposed surface of said dielectric oxide layer of said second layered structure to said exposed surface of said oxide bonding enhancement dielectric layer forms an oxide-oxide bonded between said dielectric oxide layer and said exposed surface of said oxide bonding enhancement dielectric layer.
The method of Claim 1, wherein said dielectric oxide layer of said second layered structure comprises a same dielectric material as said oxide bonding enhancement dielectric layer.
The method of Claim 1, wherein said removing said carrier substrate comprises laser ablation.
The method of Claim 1, wherein said removing said adhesive layer comprises a chemical stripping process.
The method of Claim 1, wherein said removing said copper foil comprises wet etching.
The method of Claim 1, wherein said oxide bonding enhancement dielectric layer comprises hydrogen silsesquioxane.
The method of Claim 1, wherein said oxide bonding enhancement dielectric layer comprises methyl silsesquioxane
The method of Claim 1, wherein said carrier substrate comprises glass.
The method of Claim 1, wherein said receiver substrate comprises a semiconductor material.
The method of Claim 1, wherein said adhesive layer comprises a laser ablatable or UV releaseable adhesive.
The method of Claim 1, wherein said adhesive a spin-on coating process.
The method of Claim 1, wherein said forming comprises providing a liquid dielectric material enhancement dielectric layer upon application to liquid dielectric material precursor onto said layer
The method of Claim 1, wherein said dielectric that different from said oxide bonding enhancement of 23 layer is applied to said carrier surface utilizing oxide bonding enhancement dielectric layer precursor which forms said oxide bonding said layer of graphene, and depositing said of graphene. oxide layer comprises a dielectric material dielectric layer. YO R₉₂₀₁₂₀₆₁₁US₂ Page 22
Layer stacks claimed or described, ordered top of device to substrate.
first layered structure (graphene on copper foil with carrier)
second layered structure (receiver substrate with dielectric oxide)
Materials described outside the worked examples.
copper foil
Cu
graphene layer
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–900 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,859,379Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a vertical cross sectional view of an initial structure including a layer of graphene located on an exposed surface of a copper foil that can be …
FIG. 2 after removing the copper foil and exposing a surface of the layer of graphene. [0015]
FIG. 3 is a vertical cross sectional view of the first layered structure of
FIG. 4 is a vertical cross sectional view of the structure of SIG. 3 after forming an oxide bonding enhancement dielectric layer on the exposed surface of the …
FIG. 5 is a vertical cross sectional view of a second layered structure including a receiver substrate and a dielectric oxide layer that can be used in the …
FIG. 6 is a vertical cross sectional view after bonding the first layered structure shown in
FIG. 7 is a vertical cross sectional view of the structure shown in
FIG. 8 in accordance with an embodiment of the present disclosure. [0021]
FIG. 9 is a vertical cross sectional view of an exemplary semiconductor device that includes the structure shown in
FIG. 10 is a vertical cross sectional view of another exemplary semiconductor device that includes the structure shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of transferring a graphene layer from one substrate to another substrate, said method comprising: providing a first layered structure including, from bottom to top, a copper foil, a layer of graphene, an adhesive layer and a carrier substrate; removing said copper foil exposing a surface of said layer of graphene; forming an oxide bonding enhancement dielectric layer on said exposed surface of said layer of graphene; providing a second layered structure including a receiver substrate and a dielectric oxide layer; bonding an exposed surface of said dielectric oxide layer of said second layered structure to an exposed surface of said oxide bonding enhancement dielectric layer; and removing said carrier substrate and said adhesive layer exposing said layer of graphene.
The method of Claim 1, wherein said providing said first layered structure includes: forming said layer of graphene on an exposed surface of said copper foil; and bonding a structure including said adhesive layer and said carrier substrate to an exposed surface of said layer of graphene.
The method of Claim 1, wherein said forming said oxide bonding enhancement dielectric layer comprises spin-coating a protective polymeric material on said exposed surface of said layer of graphene.
The method of Claim 1, wherein said bonding said exposed surface of said dielectric oxide layer of said second layered structure to said exposed surface of said oxide bonding enhancement dielectric layer forms an oxide-oxide bonded between said dielectric oxide layer and said exposed surface of said oxide bonding enhancement dielectric layer.
The method of Claim 1, wherein said dielectric oxide layer of said second layered structure comprises a same dielectric material as said oxide bonding enhancement dielectric layer.
The method of Claim 1, wherein said removing said carrier substrate comprises laser ablation.
The method of Claim 1, wherein said removing said adhesive layer comprises a chemical stripping process.
The method of Claim 1, wherein said removing said copper foil comprises wet etching.
The method of Claim 1, wherein said oxide bonding enhancement dielectric layer comprises hydrogen silsesquioxane.
The method of Claim 1, wherein said oxide bonding enhancement dielectric layer comprises methyl silsesquioxane
The method of Claim 1, wherein said carrier substrate comprises glass.
The method of Claim 1, wherein said receiver substrate comprises a semiconductor material.
The method of Claim 1, wherein said adhesive layer comprises a laser ablatable or UV releaseable adhesive.
The method of Claim 1, wherein said adhesive a spin-on coating process.
The method of Claim 1, wherein said forming comprises providing a liquid dielectric material enhancement dielectric layer upon application to liquid dielectric material precursor onto said layer
The method of Claim 1, wherein said dielectric that different from said oxide bonding enhancement of 23 layer is applied to said carrier surface utilizing oxide bonding enhancement dielectric layer precursor which forms said oxide bonding said layer of graphene, and depositing said of graphene. oxide layer comprises a dielectric material dielectric layer. YO R₉₂₀₁₂₀₆₁₁US₂ Page 22
Layer stacks claimed or described, ordered top of device to substrate.
first layered structure (graphene on copper foil with carrier)
second layered structure (receiver substrate with dielectric oxide)
Materials described outside the worked examples.
copper foil
Cu
graphene layer
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–900 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,859,379Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a vertical cross sectional view of an initial structure including a layer of graphene located on an exposed surface of a copper foil that can be …
FIG. 2 after removing the copper foil and exposing a surface of the layer of graphene. [0015]
FIG. 3 is a vertical cross sectional view of the first layered structure of
FIG. 4 is a vertical cross sectional view of the structure of SIG. 3 after forming an oxide bonding enhancement dielectric layer on the exposed surface of the …
FIG. 5 is a vertical cross sectional view of a second layered structure including a receiver substrate and a dielectric oxide layer that can be used in the …
FIG. 6 is a vertical cross sectional view after bonding the first layered structure shown in
FIG. 7 is a vertical cross sectional view of the structure shown in
FIG. 8 in accordance with an embodiment of the present disclosure. [0021]
FIG. 9 is a vertical cross sectional view of an exemplary semiconductor device that includes the structure shown in
FIG. 10 is a vertical cross sectional view of another exemplary semiconductor device that includes the structure shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of transferring a graphene layer from one substrate to another substrate, said method comprising: providing a first layered structure including, from bottom to top, a copper foil, a layer of graphene, an adhesive layer and a carrier substrate; removing said copper foil exposing a surface of said layer of graphene; forming an oxide bonding enhancement dielectric layer on said exposed surface of said layer of graphene; providing a second layered structure including a receiver substrate and a dielectric oxide layer; bonding an exposed surface of said dielectric oxide layer of said second layered structure to an exposed surface of said oxide bonding enhancement dielectric layer; and removing said carrier substrate and said adhesive layer exposing said layer of graphene.
The method of Claim 1, wherein said providing said first layered structure includes: forming said layer of graphene on an exposed surface of said copper foil; and bonding a structure including said adhesive layer and said carrier substrate to an exposed surface of said layer of graphene.
The method of Claim 1, wherein said forming said oxide bonding enhancement dielectric layer comprises spin-coating a protective polymeric material on said exposed surface of said layer of graphene.
The method of Claim 1, wherein said bonding said exposed surface of said dielectric oxide layer of said second layered structure to said exposed surface of said oxide bonding enhancement dielectric layer forms an oxide-oxide bonded between said dielectric oxide layer and said exposed surface of said oxide bonding enhancement dielectric layer.
The method of Claim 1, wherein said dielectric oxide layer of said second layered structure comprises a same dielectric material as said oxide bonding enhancement dielectric layer.
The method of Claim 1, wherein said removing said carrier substrate comprises laser ablation.
The method of Claim 1, wherein said removing said adhesive layer comprises a chemical stripping process.
The method of Claim 1, wherein said removing said copper foil comprises wet etching.
The method of Claim 1, wherein said oxide bonding enhancement dielectric layer comprises hydrogen silsesquioxane.
The method of Claim 1, wherein said oxide bonding enhancement dielectric layer comprises methyl silsesquioxane
The method of Claim 1, wherein said carrier substrate comprises glass.
The method of Claim 1, wherein said receiver substrate comprises a semiconductor material.
The method of Claim 1, wherein said adhesive layer comprises a laser ablatable or UV releaseable adhesive.
The method of Claim 1, wherein said adhesive a spin-on coating process.
The method of Claim 1, wherein said forming comprises providing a liquid dielectric material enhancement dielectric layer upon application to liquid dielectric material precursor onto said layer
The method of Claim 1, wherein said dielectric that different from said oxide bonding enhancement of 23 layer is applied to said carrier surface utilizing oxide bonding enhancement dielectric layer precursor which forms said oxide bonding said layer of graphene, and depositing said of graphene. oxide layer comprises a dielectric material dielectric layer. YO R₉₂₀₁₂₀₆₁₁US₂ Page 22
Layer stacks claimed or described, ordered top of device to substrate.
first layered structure (graphene on copper foil with carrier)
second layered structure (receiver substrate with dielectric oxide)
Materials described outside the worked examples.
copper foil
Cu
graphene layer
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–900 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
transferred graphene structure on receiver substrate
oxide bonding enhancement dielectric layer
carrier substrate
dielectric oxide layer
adhesive layer
hydrogen silsesquioxane
HSiO1.5
methyl silsesquioxane
CH₃SiO1.5
glass
semiconductor material
| 15–35 µm |
| — |
Temperature | 950–1050 °C | — |
Temperature | 300–350 °C | — |
Thickness | 5000–6000 nm | — |
Temperature | 20–30 °C | — |
Duration | 1–10 minutes | — |
Thickness | 725–775 µm | — |
Thickness | 10–50 nm | — |
Temperature | 250–350 °C | — |
Thickness | 1–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
Thickness | ≥ 5 µm | — |
transferred graphene structure on receiver substrate
oxide bonding enhancement dielectric layer
carrier substrate
dielectric oxide layer
adhesive layer
hydrogen silsesquioxane
HSiO1.5
methyl silsesquioxane
CH₃SiO1.5
glass
semiconductor material
| 15–35 µm |
| — |
Temperature | 950–1050 °C | — |
Temperature | 300–350 °C | — |
Thickness | 5000–6000 nm | — |
Temperature | 20–30 °C | — |
Duration | 1–10 minutes | — |
Thickness | 725–775 µm | — |
Thickness | 10–50 nm | — |
Temperature | 250–350 °C | — |
Thickness | 1–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
Thickness | ≥ 5 µm | — |
transferred graphene structure on receiver substrate
oxide bonding enhancement dielectric layer
carrier substrate
dielectric oxide layer
adhesive layer
hydrogen silsesquioxane
HSiO1.5
methyl silsesquioxane
CH₃SiO1.5
glass
semiconductor material
| 15–35 µm |
| — |
Temperature | 950–1050 °C | — |
Temperature | 300–350 °C | — |
Thickness | 5000–6000 nm | — |
Temperature | 20–30 °C | — |
Duration | 1–10 minutes | — |
Thickness | 725–775 µm | — |
Thickness | 10–50 nm | — |
Temperature | 250–350 °C | — |
Thickness | 1–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
Thickness | ≥ 5 µm | — |
transferred graphene structure on receiver substrate
oxide bonding enhancement dielectric layer
carrier substrate
dielectric oxide layer
adhesive layer
hydrogen silsesquioxane
HSiO1.5
methyl silsesquioxane
CH₃SiO1.5
glass
semiconductor material
| 15–35 µm |
| — |
Temperature | 950–1050 °C | — |
Temperature | 300–350 °C | — |
Thickness | 5000–6000 nm | — |
Temperature | 20–30 °C | — |
Duration | 1–10 minutes | — |
Thickness | 725–775 µm | — |
Thickness | 10–50 nm | — |
Temperature | 250–350 °C | — |
Thickness | 1–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
Thickness | ≥ 5 µm | — |