Title: CHEMICAL VAPOR DEPOSITION GROWTH OF GRAPHENE Fig. 1

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Patent

Atlas literature

Patent

US 10,370,774

Title: CHEMICAL VAPOR DEPOSITION GROWTH OF GRAPHENE Fig. 1

DUAN, Xiangfeng, ZHOU, Hailong

17 July 2014·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

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FIG. 17

FIG. 18

FIG. 19

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 7 dependent

1
IndependentgrapheneCuCH₄Ar
A process of growing graphene, comprising: providing a metal substrate; annealing the metal substrate up to a growth temperature for an annealing time period and in the presence of a nonreducing gas; and introducing a gas mixture to grow graphene over the metal substrate, wherein the gas mixture includes a ﬁrst gas that is hydrogen, and a second gas that is a carbon-containing precursor, a molar ratio of the ﬁrst gas and the second gas is at least 100, and introducing the gas mixture is carried out at a pressure up to 100 mbar, wherein the graphene is a single cr y stalline, monola y er graphene domain having a lateral size of at least 2.4 mm. Currently amended
1. 2
  Dependent← claim 1Cu
  The process of claim 1, wherein the metal substrate is a copper substrate. Original
2. 3
  Dependent← claim 1
  The process of claim 1, wherein the growth temperature is in the range of 900 0 C to 1,200 0 C. Original
3. 4
  Dependent← claim 1
  The process of claim 1, wherein the annealing time period is less than 1 hour. Original
4. 5
  Dependent← claim 1Ar
  The process of claim 1, wherein the non-reducing gas includes argon. Original
5. 6
  Dependent← claim 1
  The process of claim 1, wherein annealing the metal substrate is carried out in the absence of the ﬁrst gas and the second gas. Original
6. 7
  Dependent← claim 1CH₄
  The process of claim 1, wherein the second gas is methane. Previously presented
7. 8
  Dependent← claim 1
  The process of claim 1, wherein the molar ratio of the ﬁrst gas and the second gas is at least
500
Independent
Original

Materials

Materials described outside the worked examples.

graphene

Grown Material

copper substrate

Growth Substrate

Process steps

Additional fabrication and treatment steps described in the patent.

Cvd Growth

Step 1

Temperature

1070°C

Ambient

Ar/H2/CH4

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
single crystalline monolayer graphene domain lateral size	≥ 2.4	single crystalline monolayer graphene
AB-stacked bilayer graphene domain lateral size	30–300

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Title: CHEMICAL VAPOR DEPOSITION GROWTH OF GRAPHENE Fig. 1 | Matter42 Literature