Patent
US 9,105,793GRAPHENE DEVICE AND METHOD OF USING GRAPHENE DEVICE
Vincent Bouchiat, Caglar Girit, Brian Kessler, Alexander K. Zettl
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,105,793Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a base material; a graphene layer disposed on the base material, the graphene layer being a planar graphene layer including a first side and a second side, the first side of the graphene layer being disposed on the base material, and the first side and the second side of the graphene layer being insulated from one another by intercalated atoms or molecules; a first electrode disposed on the second side of the graphene layer; a second electrode disposed on the second side of the graphene layer; and a first dopant island disposed on the second side of the graphene layer between the first and the second electrodes.
The graphene device of claim 1 wherein the second side of the graphene layer comprises a single-layer of graphene.
The graphene device of claim 1 wherein the second side of the graphene layer comprises a few layers of graphene. previously presented
The graphene device of claim 1 wherein the first dopant island is selected from the group consisting of a superconducting material, a fe rr omagnetic material, an antiferromagnetic material, a photovoltaic material, a plasmonic material, a spintronic material, an organic material, and a biological material.
(Cu rr ently Amended) The graphene device of claim 1 further comprising: a plurality of dopant islands disposed on a -srfaee-ef the second side of the graphene layer between the first and the second electrodes, the first dopant island being one of the plurality -2- of dopant islands.
The graphene device of claim 1 wherein the
canceled
The graphene device of claim 7 wherein the plurality of dopant islands comprise a superconducting material.
(Cu rr ently Amended) A method of using a graphene device comprising: providing the graphene device comprising: a base material; a graphene layer disposed on the base material, the graphene layer being a planar graphene layer including a first side and a second side, the first side of the graphene layer being disposed on the base material, and the first side and the second side of the graphene layer being insulated from one another by intercalated atoms or molecules; a first electrode disposed on the second side of the graphene layer; a second electrode disposed on the second side of the graphene layer; and a first dopant island disposed on the second side of the graphene layer between the first and the second electrodes; and applying a voltage to the first side of the graphene layer.
The method of claim 17 wherein the first dopant island is selected from the group consisting of a superconducting material, a ferromagnetic material, an antiferromagnetic material, a photovoltaic material, a plasmonic material, a spintronic material, an organic material, and a biological material.
The method of claim 17 wherein the first dopant island comprises a superconducting material.
The method of claim 17 wherein the first dopant island comprises a chemically sensitive material.
The method of claim 17 further comprising: observing a response of the first dopant island to the voltage.
The method of claim 17 wherein the base comprises an electron microscope. comprises a scanning probe microscope. base material comprises an insulator. material comprises an insulator. -5-
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect device with dopant islands
superconducting field effect transistor/superconducting photon detector/particle detector/magnetometer/superconducting mechanical device
No layer stack recorded.
Materials described outside the worked examples.
graphene
single-layer graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–3 K | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,105,793Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a base material; a graphene layer disposed on the base material, the graphene layer being a planar graphene layer including a first side and a second side, the first side of the graphene layer being disposed on the base material, and the first side and the second side of the graphene layer being insulated from one another by intercalated atoms or molecules; a first electrode disposed on the second side of the graphene layer; a second electrode disposed on the second side of the graphene layer; and a first dopant island disposed on the second side of the graphene layer between the first and the second electrodes.
The graphene device of claim 1 wherein the second side of the graphene layer comprises a single-layer of graphene.
The graphene device of claim 1 wherein the second side of the graphene layer comprises a few layers of graphene. previously presented
The graphene device of claim 1 wherein the first dopant island is selected from the group consisting of a superconducting material, a fe rr omagnetic material, an antiferromagnetic material, a photovoltaic material, a plasmonic material, a spintronic material, an organic material, and a biological material.
(Cu rr ently Amended) The graphene device of claim 1 further comprising: a plurality of dopant islands disposed on a -srfaee-ef the second side of the graphene layer between the first and the second electrodes, the first dopant island being one of the plurality -2- of dopant islands.
The graphene device of claim 1 wherein the
canceled
The graphene device of claim 7 wherein the plurality of dopant islands comprise a superconducting material.
(Cu rr ently Amended) A method of using a graphene device comprising: providing the graphene device comprising: a base material; a graphene layer disposed on the base material, the graphene layer being a planar graphene layer including a first side and a second side, the first side of the graphene layer being disposed on the base material, and the first side and the second side of the graphene layer being insulated from one another by intercalated atoms or molecules; a first electrode disposed on the second side of the graphene layer; a second electrode disposed on the second side of the graphene layer; and a first dopant island disposed on the second side of the graphene layer between the first and the second electrodes; and applying a voltage to the first side of the graphene layer.
The method of claim 17 wherein the first dopant island is selected from the group consisting of a superconducting material, a ferromagnetic material, an antiferromagnetic material, a photovoltaic material, a plasmonic material, a spintronic material, an organic material, and a biological material.
The method of claim 17 wherein the first dopant island comprises a superconducting material.
The method of claim 17 wherein the first dopant island comprises a chemically sensitive material.
The method of claim 17 further comprising: observing a response of the first dopant island to the voltage.
The method of claim 17 wherein the base comprises an electron microscope. comprises a scanning probe microscope. base material comprises an insulator. material comprises an insulator. -5-
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect device with dopant islands
superconducting field effect transistor/superconducting photon detector/particle detector/magnetometer/superconducting mechanical device
No layer stack recorded.
Materials described outside the worked examples.
graphene
single-layer graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–3 K | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,105,793Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a base material; a graphene layer disposed on the base material, the graphene layer being a planar graphene layer including a first side and a second side, the first side of the graphene layer being disposed on the base material, and the first side and the second side of the graphene layer being insulated from one another by intercalated atoms or molecules; a first electrode disposed on the second side of the graphene layer; a second electrode disposed on the second side of the graphene layer; and a first dopant island disposed on the second side of the graphene layer between the first and the second electrodes.
The graphene device of claim 1 wherein the second side of the graphene layer comprises a single-layer of graphene.
The graphene device of claim 1 wherein the second side of the graphene layer comprises a few layers of graphene. previously presented
The graphene device of claim 1 wherein the first dopant island is selected from the group consisting of a superconducting material, a fe rr omagnetic material, an antiferromagnetic material, a photovoltaic material, a plasmonic material, a spintronic material, an organic material, and a biological material.
(Cu rr ently Amended) The graphene device of claim 1 further comprising: a plurality of dopant islands disposed on a -srfaee-ef the second side of the graphene layer between the first and the second electrodes, the first dopant island being one of the plurality -2- of dopant islands.
The graphene device of claim 1 wherein the
canceled
The graphene device of claim 7 wherein the plurality of dopant islands comprise a superconducting material.
(Cu rr ently Amended) A method of using a graphene device comprising: providing the graphene device comprising: a base material; a graphene layer disposed on the base material, the graphene layer being a planar graphene layer including a first side and a second side, the first side of the graphene layer being disposed on the base material, and the first side and the second side of the graphene layer being insulated from one another by intercalated atoms or molecules; a first electrode disposed on the second side of the graphene layer; a second electrode disposed on the second side of the graphene layer; and a first dopant island disposed on the second side of the graphene layer between the first and the second electrodes; and applying a voltage to the first side of the graphene layer.
The method of claim 17 wherein the first dopant island is selected from the group consisting of a superconducting material, a ferromagnetic material, an antiferromagnetic material, a photovoltaic material, a plasmonic material, a spintronic material, an organic material, and a biological material.
The method of claim 17 wherein the first dopant island comprises a superconducting material.
The method of claim 17 wherein the first dopant island comprises a chemically sensitive material.
The method of claim 17 further comprising: observing a response of the first dopant island to the voltage.
The method of claim 17 wherein the base comprises an electron microscope. comprises a scanning probe microscope. base material comprises an insulator. material comprises an insulator. -5-
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect device with dopant islands
superconducting field effect transistor/superconducting photon detector/particle detector/magnetometer/superconducting mechanical device
No layer stack recorded.
Materials described outside the worked examples.
graphene
single-layer graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–3 K | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,105,793Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a base material; a graphene layer disposed on the base material, the graphene layer being a planar graphene layer including a first side and a second side, the first side of the graphene layer being disposed on the base material, and the first side and the second side of the graphene layer being insulated from one another by intercalated atoms or molecules; a first electrode disposed on the second side of the graphene layer; a second electrode disposed on the second side of the graphene layer; and a first dopant island disposed on the second side of the graphene layer between the first and the second electrodes.
The graphene device of claim 1 wherein the second side of the graphene layer comprises a single-layer of graphene.
The graphene device of claim 1 wherein the second side of the graphene layer comprises a few layers of graphene. previously presented
The graphene device of claim 1 wherein the first dopant island is selected from the group consisting of a superconducting material, a fe rr omagnetic material, an antiferromagnetic material, a photovoltaic material, a plasmonic material, a spintronic material, an organic material, and a biological material.
(Cu rr ently Amended) The graphene device of claim 1 further comprising: a plurality of dopant islands disposed on a -srfaee-ef the second side of the graphene layer between the first and the second electrodes, the first dopant island being one of the plurality -2- of dopant islands.
The graphene device of claim 1 wherein the
canceled
The graphene device of claim 7 wherein the plurality of dopant islands comprise a superconducting material.
(Cu rr ently Amended) A method of using a graphene device comprising: providing the graphene device comprising: a base material; a graphene layer disposed on the base material, the graphene layer being a planar graphene layer including a first side and a second side, the first side of the graphene layer being disposed on the base material, and the first side and the second side of the graphene layer being insulated from one another by intercalated atoms or molecules; a first electrode disposed on the second side of the graphene layer; a second electrode disposed on the second side of the graphene layer; and a first dopant island disposed on the second side of the graphene layer between the first and the second electrodes; and applying a voltage to the first side of the graphene layer.
The method of claim 17 wherein the first dopant island is selected from the group consisting of a superconducting material, a ferromagnetic material, an antiferromagnetic material, a photovoltaic material, a plasmonic material, a spintronic material, an organic material, and a biological material.
The method of claim 17 wherein the first dopant island comprises a superconducting material.
The method of claim 17 wherein the first dopant island comprises a chemically sensitive material.
The method of claim 17 further comprising: observing a response of the first dopant island to the voltage.
The method of claim 17 wherein the base comprises an electron microscope. comprises a scanning probe microscope. base material comprises an insulator. material comprises an insulator. -5-
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect device with dopant islands
superconducting field effect transistor/superconducting photon detector/particle detector/magnetometer/superconducting mechanical device
No layer stack recorded.
Materials described outside the worked examples.
graphene
single-layer graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–3 K | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
few-layer graphene
dopant island
superconducting material
Sn
chemically sensitive material
heavily doped silicon
Si
silicon oxide
SiO₂
Pd
Au
intercalated atoms or molecules
| 1e-7 torr |
| — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 cm | — |
few-layer graphene
dopant island
superconducting material
Sn
chemically sensitive material
heavily doped silicon
Si
silicon oxide
SiO₂
Pd
Au
intercalated atoms or molecules
| 1e-7 torr |
| — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 cm | — |
few-layer graphene
dopant island
superconducting material
Sn
chemically sensitive material
heavily doped silicon
Si
silicon oxide
SiO₂
Pd
Au
intercalated atoms or molecules
| 1e-7 torr |
| — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 cm | — |
few-layer graphene
dopant island
superconducting material
Sn
chemically sensitive material
heavily doped silicon
Si
silicon oxide
SiO₂
Pd
Au
intercalated atoms or molecules
| 1e-7 torr |
| — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 cm | — |