Patent
US 9,653,728GRAPHENE, POWER STORAGE DEVICE, AND ELECTRIC DEVICE
Takuya HIROHASHI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,653,728Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are pattern diagrams of graphene. 20
FIG. 2 is a graph showing potential of vacancies.
FIG. 3 illustrates a structure of a coin-type secondary battery.
FIG. 4 illustrates electric devices.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
A method of manufacturing an electrode of a power storage device comprising: forming a graphene oxide on a particle; and reducing the graphene oxide by heat treatment in an atmosphere containing nitrogen so that a graphene doped with nitrogen is formed on the particle, wherein the graphene comprises at least one hole inside a ring-like structure formed by carbon and nitrogen.
The method according to claim 2, wherein a nitrogen concentration in the graphene is higher than or equal to 0.4 at. % and lower than or equal to 40 at. %.
The method according to claim 2. wherein the hole is a nine- or more-membered ring.
The method according to claim 2, wherein the atmosphere contains ammonia.
The method according to claim 2. wherein the heat treatment is performed at 1 50 0 C or higher.
The method according to claim 2, wherein the particle is made of silicon. 4825-3749-2540 1 Docket No.: 740756-4337 Application No.: 14/969,949 Page 3
The method according to claim 2, w herein the at least one hole of the graphene is positioned on a surface of the particle so as to pass an ion.
1 6. The method according to claim 2, wherein 150 ° C to 200 °C.
(Previousl y Presented) A method of manufacturing an electrode of a power storage device comprising: forming a mixture containing a graphene oxide and a particle; heating the mixture to reduce the graphene oxide and fo rm a graphene on the particle; and adding nitrogen to the graphene after performing the heating, wherein the graphene comprises at least one hole inside a ring-like structure formed by carbon and nitrogen.
The method according to claim 8, wherein the step of heating is performed in a vacuum or in an inert gas.
(Pre v iously Presented) The method according to claim 8, wherein a nitrogen concentration in the graphene is higher than or equal to 0.4 at. % and lower than or equal to 40 at. 0%.
The method according to claim 8, wherein the hole is a nine- or more-membered ring.
The method according to claim 8, wherein the step of h eating is performed at 150 °C or higher.
The method according to claim 8, w herein the particle is made of silicon.
(New) The method according to claim 8. positioned on a surface of the particle so as to pass 740756-4337 Application No.: 14/969,949 Page
The method according to claim 8, wherein the C to 200 °C. SVG 0.063 0.177 Chemistry Black and white 4825-wherein the at least one hole of the graphene is an ion. 4825-3749-2540 I Docket No.: the heat treatment is performed in a range of heat treatment is performed in a range of 150 ° 14969949.11-30-2016.IW₇WV₀VKPXXIFW2.CLM.3.8.382.3307.435.3326.svg 40 I
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials2 process steps
Graphene oxide is mixed with silicon particles (graphene oxide at 1-15 wt%, preferably 1-5 wt% of total). The mixture is heat-treated in an ammonia atmosphere at 150°C or higher (preferably 200°C or higher) to reduce graphene oxide to graphene on the silicon particle surfaces, forming a hole in the graphene and doping it with nitrogen (N concentration 0.4–40 at.%). Alternatively, heat treatment can be performed in vacuum or inert gas followed by separate nitrogen addition (e.g., ammonia plasma, nitrogen plasma, ion doping, or ion implantation).
Layer stacks claimed or described, ordered top of device to substrate.
electrode of a power storage device
power storage device (lithium-ion secondary battery)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing potential of vacancies.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nitrogen Concentration | 0.4–40 at.% | nitrogen-doped graphene with hole |
Thickness | 20–100 nm |
Related documents with shared materials, methods, properties, or citations.
ALKALI METAL-SELENIUM SECONDARY BATTERY CONTAINING A GRAPHENE FOAM-PROTECTED SELENIUM CATHODE
Supercapacitor and Electrode Having Cellulose Nanofiber-Spaced Graphene Sheets and Production Process
Patent
Atlas literature
Patent
US 9,653,728Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are pattern diagrams of graphene. 20
FIG. 2 is a graph showing potential of vacancies.
FIG. 3 illustrates a structure of a coin-type secondary battery.
FIG. 4 illustrates electric devices.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
A method of manufacturing an electrode of a power storage device comprising: forming a graphene oxide on a particle; and reducing the graphene oxide by heat treatment in an atmosphere containing nitrogen so that a graphene doped with nitrogen is formed on the particle, wherein the graphene comprises at least one hole inside a ring-like structure formed by carbon and nitrogen.
The method according to claim 2, wherein a nitrogen concentration in the graphene is higher than or equal to 0.4 at. % and lower than or equal to 40 at. %.
The method according to claim 2. wherein the hole is a nine- or more-membered ring.
The method according to claim 2, wherein the atmosphere contains ammonia.
The method according to claim 2. wherein the heat treatment is performed at 1 50 0 C or higher.
The method according to claim 2, wherein the particle is made of silicon. 4825-3749-2540 1 Docket No.: 740756-4337 Application No.: 14/969,949 Page 3
The method according to claim 2, w herein the at least one hole of the graphene is positioned on a surface of the particle so as to pass an ion.
1 6. The method according to claim 2, wherein 150 ° C to 200 °C.
(Previousl y Presented) A method of manufacturing an electrode of a power storage device comprising: forming a mixture containing a graphene oxide and a particle; heating the mixture to reduce the graphene oxide and fo rm a graphene on the particle; and adding nitrogen to the graphene after performing the heating, wherein the graphene comprises at least one hole inside a ring-like structure formed by carbon and nitrogen.
The method according to claim 8, wherein the step of heating is performed in a vacuum or in an inert gas.
(Pre v iously Presented) The method according to claim 8, wherein a nitrogen concentration in the graphene is higher than or equal to 0.4 at. % and lower than or equal to 40 at. 0%.
The method according to claim 8, wherein the hole is a nine- or more-membered ring.
The method according to claim 8, wherein the step of h eating is performed at 150 °C or higher.
The method according to claim 8, w herein the particle is made of silicon.
(New) The method according to claim 8. positioned on a surface of the particle so as to pass 740756-4337 Application No.: 14/969,949 Page
The method according to claim 8, wherein the C to 200 °C. SVG 0.063 0.177 Chemistry Black and white 4825-wherein the at least one hole of the graphene is an ion. 4825-3749-2540 I Docket No.: the heat treatment is performed in a range of heat treatment is performed in a range of 150 ° 14969949.11-30-2016.IW₇WV₀VKPXXIFW2.CLM.3.8.382.3307.435.3326.svg 40 I
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials2 process steps
Graphene oxide is mixed with silicon particles (graphene oxide at 1-15 wt%, preferably 1-5 wt% of total). The mixture is heat-treated in an ammonia atmosphere at 150°C or higher (preferably 200°C or higher) to reduce graphene oxide to graphene on the silicon particle surfaces, forming a hole in the graphene and doping it with nitrogen (N concentration 0.4–40 at.%). Alternatively, heat treatment can be performed in vacuum or inert gas followed by separate nitrogen addition (e.g., ammonia plasma, nitrogen plasma, ion doping, or ion implantation).
Layer stacks claimed or described, ordered top of device to substrate.
electrode of a power storage device
power storage device (lithium-ion secondary battery)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing potential of vacancies.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nitrogen Concentration | 0.4–40 at.% | nitrogen-doped graphene with hole |
Thickness | 20–100 nm |
Related documents with shared materials, methods, properties, or citations.
ALKALI METAL-SELENIUM SECONDARY BATTERY CONTAINING A GRAPHENE FOAM-PROTECTED SELENIUM CATHODE
Supercapacitor and Electrode Having Cellulose Nanofiber-Spaced Graphene Sheets and Production Process
Patent
Atlas literature
Patent
US 9,653,728Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are pattern diagrams of graphene. 20
FIG. 2 is a graph showing potential of vacancies.
FIG. 3 illustrates a structure of a coin-type secondary battery.
FIG. 4 illustrates electric devices.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
A method of manufacturing an electrode of a power storage device comprising: forming a graphene oxide on a particle; and reducing the graphene oxide by heat treatment in an atmosphere containing nitrogen so that a graphene doped with nitrogen is formed on the particle, wherein the graphene comprises at least one hole inside a ring-like structure formed by carbon and nitrogen.
The method according to claim 2, wherein a nitrogen concentration in the graphene is higher than or equal to 0.4 at. % and lower than or equal to 40 at. %.
The method according to claim 2. wherein the hole is a nine- or more-membered ring.
The method according to claim 2, wherein the atmosphere contains ammonia.
The method according to claim 2. wherein the heat treatment is performed at 1 50 0 C or higher.
The method according to claim 2, wherein the particle is made of silicon. 4825-3749-2540 1 Docket No.: 740756-4337 Application No.: 14/969,949 Page 3
The method according to claim 2, w herein the at least one hole of the graphene is positioned on a surface of the particle so as to pass an ion.
1 6. The method according to claim 2, wherein 150 ° C to 200 °C.
(Previousl y Presented) A method of manufacturing an electrode of a power storage device comprising: forming a mixture containing a graphene oxide and a particle; heating the mixture to reduce the graphene oxide and fo rm a graphene on the particle; and adding nitrogen to the graphene after performing the heating, wherein the graphene comprises at least one hole inside a ring-like structure formed by carbon and nitrogen.
The method according to claim 8, wherein the step of heating is performed in a vacuum or in an inert gas.
(Pre v iously Presented) The method according to claim 8, wherein a nitrogen concentration in the graphene is higher than or equal to 0.4 at. % and lower than or equal to 40 at. 0%.
The method according to claim 8, wherein the hole is a nine- or more-membered ring.
The method according to claim 8, wherein the step of h eating is performed at 150 °C or higher.
The method according to claim 8, w herein the particle is made of silicon.
(New) The method according to claim 8. positioned on a surface of the particle so as to pass 740756-4337 Application No.: 14/969,949 Page
The method according to claim 8, wherein the C to 200 °C. SVG 0.063 0.177 Chemistry Black and white 4825-wherein the at least one hole of the graphene is an ion. 4825-3749-2540 I Docket No.: the heat treatment is performed in a range of heat treatment is performed in a range of 150 ° 14969949.11-30-2016.IW₇WV₀VKPXXIFW2.CLM.3.8.382.3307.435.3326.svg 40 I
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials2 process steps
Graphene oxide is mixed with silicon particles (graphene oxide at 1-15 wt%, preferably 1-5 wt% of total). The mixture is heat-treated in an ammonia atmosphere at 150°C or higher (preferably 200°C or higher) to reduce graphene oxide to graphene on the silicon particle surfaces, forming a hole in the graphene and doping it with nitrogen (N concentration 0.4–40 at.%). Alternatively, heat treatment can be performed in vacuum or inert gas followed by separate nitrogen addition (e.g., ammonia plasma, nitrogen plasma, ion doping, or ion implantation).
Layer stacks claimed or described, ordered top of device to substrate.
electrode of a power storage device
power storage device (lithium-ion secondary battery)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing potential of vacancies.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nitrogen Concentration | 0.4–40 at.% | nitrogen-doped graphene with hole |
Thickness | 20–100 nm |
Related documents with shared materials, methods, properties, or citations.
ALKALI METAL-SELENIUM SECONDARY BATTERY CONTAINING A GRAPHENE FOAM-PROTECTED SELENIUM CATHODE
Supercapacitor and Electrode Having Cellulose Nanofiber-Spaced Graphene Sheets and Production Process
Patent
Atlas literature
Patent
US 9,653,728Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are pattern diagrams of graphene. 20
FIG. 2 is a graph showing potential of vacancies.
FIG. 3 illustrates a structure of a coin-type secondary battery.
FIG. 4 illustrates electric devices.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
A method of manufacturing an electrode of a power storage device comprising: forming a graphene oxide on a particle; and reducing the graphene oxide by heat treatment in an atmosphere containing nitrogen so that a graphene doped with nitrogen is formed on the particle, wherein the graphene comprises at least one hole inside a ring-like structure formed by carbon and nitrogen.
The method according to claim 2, wherein a nitrogen concentration in the graphene is higher than or equal to 0.4 at. % and lower than or equal to 40 at. %.
The method according to claim 2. wherein the hole is a nine- or more-membered ring.
The method according to claim 2, wherein the atmosphere contains ammonia.
The method according to claim 2. wherein the heat treatment is performed at 1 50 0 C or higher.
The method according to claim 2, wherein the particle is made of silicon. 4825-3749-2540 1 Docket No.: 740756-4337 Application No.: 14/969,949 Page 3
The method according to claim 2, w herein the at least one hole of the graphene is positioned on a surface of the particle so as to pass an ion.
1 6. The method according to claim 2, wherein 150 ° C to 200 °C.
(Previousl y Presented) A method of manufacturing an electrode of a power storage device comprising: forming a mixture containing a graphene oxide and a particle; heating the mixture to reduce the graphene oxide and fo rm a graphene on the particle; and adding nitrogen to the graphene after performing the heating, wherein the graphene comprises at least one hole inside a ring-like structure formed by carbon and nitrogen.
The method according to claim 8, wherein the step of heating is performed in a vacuum or in an inert gas.
(Pre v iously Presented) The method according to claim 8, wherein a nitrogen concentration in the graphene is higher than or equal to 0.4 at. % and lower than or equal to 40 at. 0%.
The method according to claim 8, wherein the hole is a nine- or more-membered ring.
The method according to claim 8, wherein the step of h eating is performed at 150 °C or higher.
The method according to claim 8, w herein the particle is made of silicon.
(New) The method according to claim 8. positioned on a surface of the particle so as to pass 740756-4337 Application No.: 14/969,949 Page
The method according to claim 8, wherein the C to 200 °C. SVG 0.063 0.177 Chemistry Black and white 4825-wherein the at least one hole of the graphene is an ion. 4825-3749-2540 I Docket No.: the heat treatment is performed in a range of heat treatment is performed in a range of 150 ° 14969949.11-30-2016.IW₇WV₀VKPXXIFW2.CLM.3.8.382.3307.435.3326.svg 40 I
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials2 process steps
Graphene oxide is mixed with silicon particles (graphene oxide at 1-15 wt%, preferably 1-5 wt% of total). The mixture is heat-treated in an ammonia atmosphere at 150°C or higher (preferably 200°C or higher) to reduce graphene oxide to graphene on the silicon particle surfaces, forming a hole in the graphene and doping it with nitrogen (N concentration 0.4–40 at.%). Alternatively, heat treatment can be performed in vacuum or inert gas followed by separate nitrogen addition (e.g., ammonia plasma, nitrogen plasma, ion doping, or ion implantation).
Layer stacks claimed or described, ordered top of device to substrate.
electrode of a power storage device
power storage device (lithium-ion secondary battery)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing potential of vacancies.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nitrogen Concentration | 0.4–40 at.% | nitrogen-doped graphene with hole |
Thickness | 20–100 nm |
Related documents with shared materials, methods, properties, or citations.
ALKALI METAL-SELENIUM SECONDARY BATTERY CONTAINING A GRAPHENE FOAM-PROTECTED SELENIUM CATHODE
Supercapacitor and Electrode Having Cellulose Nanofiber-Spaced Graphene Sheets and Production Process
| — |
Voltage | 5–20 V | — |
Temperature | 150–200 °C | — |
| — |
Voltage | 5–20 V | — |
Temperature | 150–200 °C | — |
| — |
Voltage | 5–20 V | — |
Temperature | 150–200 °C | — |
| — |
Voltage | 5–20 V | — |
Temperature | 150–200 °C | — |