Patent
US 9,184,133GRAPHENE WIRING AND SEMICONDUCTOR DEVICE
Masayuki KATAGIRI
US
Copyright © 2026 Matter42. All rights reserved.
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Patent
US 9,184,133Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic perspective view of a wiring of 1 G081986-USA-A FTS 0 991-US-A an embodiment; [0006]
FIG. 2 is a schematic cross-sectional view of a wiring of an embodiment; [0007]
FIG. 3 is a schematic cross-sectional view of a wiring 5 of an embodiment; SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235554.10.380.854.2060.905.svg 0.17 …
FIG. 4 is a schematic cross-sectional view of the section X₃ in
FIG. 5. When the second and third conductive layers 10 and 11 are made of the same material, the second and third conductive layers 10 and 11 may be formed at …
FIG. 6 is a schematic cross-sectional view of part of a SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235560.19.247.1548.2066.1601.svg 0.177 6.063 Graph Black …
FIG. 8 shows the step of forming a lower wiring layer and an interlayer insulating film. First, a lower wiring layer 2 is formed on a substrate 1 on which a …
FIG. 9, via holes 4 passing through the first interlayer 5 insulating film 3 to the lower wiring layer 2 are formed, for example, by dry etching using …
FIG. 10, via wiring 5 is then formed in each via hole 4. I n this case, the via wiring 5 may be made of carbon nanotubes or a metal element such as Cu. For …
FIG. 13, an insulating film 8 is formed as an etching mask SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235566.16.376.1397.2067.1453.svg 0.187 5.637 Graph …
FIG. 14. 30
FIG. 15 is a schematic cross-sectional view of a semiconductor device having a wiring of an embodiment; and [0020]
FIG. 16 is a schematic cross-sectional view of a semiconductor device having a wiring of an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene wiring comprising: graphene; 5 first conductive layers; second conductive layers; and a third conductive layer, wherein the first conductive layers are connected to first sides of the graphene opposite to each other in a SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.12.243.1169.1417.1219.svg 0.167 3.913 Graph Black and white the second conductive layers are connected to second SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.14.376.1317.2060.1370.svg 0.177 5.613 Graph Black and white direction of the wiring, the third conductive layer is connected to a top surface 15 of the graphene, and the first and second conductive layers are connected to each other. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.20.552.1857.1802.1908.svg 0.17 4.167 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.21.255.1932.2038.1990.svg 0.193 5.943 Graph Black and white least two layers, and SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.23.555.2086.2078.2137.svg 0.17 5.077 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.24.390.2163.2077.2222.svg 0.197 5.623 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.25.390.2241.1964.2300.svg 0.197 5.247 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.26.261.2318.2079.2373.svg 0.183 6.06 Graph Black and white graphene. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.28.564.2549.2086.2604.svg 0.183 5.073 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.29.397.2627.2084.2684.svg 0.19 5.623 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.30.268.2705.1972.2763.svg 0.193 5.68 Graph Black and white direction of the wiring. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.32.570.2935.2091.2991.svg 0.187 5.07 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.33.404.3012.2092.3066.svg 0.18 5.627 Graph Black and white 17 G081986-USA-A FTS099 1-US-A and second conductive layers. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.5.530.631.2051.681.svg 0.167 5.07 Graph Black and white has a width of 5 nm to 100 nm.
6. The graphene wiring according to claim 1, wherein at least one of the first, second, and third conductive layers is connected by adhesion to the graphene.
A semiconductor device comprising a graphene wiring, the graphene wiring comprising: graphene; first conductive layers; second conductive layers; and 15 a third conductive layer, wherein the first conductive layers are connected to SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.19.377.1706.1951.1757.svg 0.17 5.247 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.20.378.1789.1423.1839.svg 0.167 3.483 Graph Black and white the second conductive layers are connected to second SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.22.249.1935.2068.1991.svg 0.187 6.063 Graph Black and white direction of the wiring, the third conductive layer is connected to a top surface of the graphene, and the first and second conductive layers are connected to 25 each other.
The device according to claim 7, wherein SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.29.556.2553.2044.2608.svg 0.183 4.96 Graph Black and white least two layers, and SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.31.261.2708.2083.2760.svg 0.173 6.073 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.32.394.2784.2083.2840.svg 0.187 5.63 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.33.393.2862.1968.2918.svg 0.187 5.25 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.34.394.2939.2086.2990.svg 0.17 5.64 Graph Black and white graphene. 18 G08 1 986-USA-A FTS O₉ 91-US-A
The device according to claim 7, wherein the second conductive layers are connected to the whole of the second sides SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.6.365.705.1938.757.svg 0.173 5.243 Graph Black and white 5 direction of the wiring.
The device according to claim 7, wherein the third SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.9.370.1012.2061.1065.svg 0.177 5.637 Graph Black and white second conductive layers.
The device according to claim 7, wherein the graphene has a width of 5 nm to 100 nm.
The device according to claim 7, wherein at least SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.15.250.1548.1980.1604.svg 0.187 5.767 Graph Black and white connected by adhesion to the graphene. 19
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring
semiconductor device comprising graphene wiring
Materials described outside the worked examples.
graphene
multilayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a schematic cross-sectional view of part of a SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235560.19.247.1548.2066.1601.svg 0.177 6.063 Graph Black …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–100 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,184,133Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic perspective view of a wiring of 1 G081986-USA-A FTS 0 991-US-A an embodiment; [0006]
FIG. 2 is a schematic cross-sectional view of a wiring of an embodiment; [0007]
FIG. 3 is a schematic cross-sectional view of a wiring 5 of an embodiment; SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235554.10.380.854.2060.905.svg 0.17 …
FIG. 4 is a schematic cross-sectional view of the section X₃ in
FIG. 5. When the second and third conductive layers 10 and 11 are made of the same material, the second and third conductive layers 10 and 11 may be formed at …
FIG. 6 is a schematic cross-sectional view of part of a SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235560.19.247.1548.2066.1601.svg 0.177 6.063 Graph Black …
FIG. 8 shows the step of forming a lower wiring layer and an interlayer insulating film. First, a lower wiring layer 2 is formed on a substrate 1 on which a …
FIG. 9, via holes 4 passing through the first interlayer 5 insulating film 3 to the lower wiring layer 2 are formed, for example, by dry etching using …
FIG. 10, via wiring 5 is then formed in each via hole 4. I n this case, the via wiring 5 may be made of carbon nanotubes or a metal element such as Cu. For …
FIG. 13, an insulating film 8 is formed as an etching mask SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235566.16.376.1397.2067.1453.svg 0.187 5.637 Graph …
FIG. 14. 30
FIG. 15 is a schematic cross-sectional view of a semiconductor device having a wiring of an embodiment; and [0020]
FIG. 16 is a schematic cross-sectional view of a semiconductor device having a wiring of an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene wiring comprising: graphene; 5 first conductive layers; second conductive layers; and a third conductive layer, wherein the first conductive layers are connected to first sides of the graphene opposite to each other in a SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.12.243.1169.1417.1219.svg 0.167 3.913 Graph Black and white the second conductive layers are connected to second SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.14.376.1317.2060.1370.svg 0.177 5.613 Graph Black and white direction of the wiring, the third conductive layer is connected to a top surface 15 of the graphene, and the first and second conductive layers are connected to each other. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.20.552.1857.1802.1908.svg 0.17 4.167 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.21.255.1932.2038.1990.svg 0.193 5.943 Graph Black and white least two layers, and SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.23.555.2086.2078.2137.svg 0.17 5.077 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.24.390.2163.2077.2222.svg 0.197 5.623 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.25.390.2241.1964.2300.svg 0.197 5.247 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.26.261.2318.2079.2373.svg 0.183 6.06 Graph Black and white graphene. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.28.564.2549.2086.2604.svg 0.183 5.073 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.29.397.2627.2084.2684.svg 0.19 5.623 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.30.268.2705.1972.2763.svg 0.193 5.68 Graph Black and white direction of the wiring. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.32.570.2935.2091.2991.svg 0.187 5.07 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.33.404.3012.2092.3066.svg 0.18 5.627 Graph Black and white 17 G081986-USA-A FTS099 1-US-A and second conductive layers. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.5.530.631.2051.681.svg 0.167 5.07 Graph Black and white has a width of 5 nm to 100 nm.
6. The graphene wiring according to claim 1, wherein at least one of the first, second, and third conductive layers is connected by adhesion to the graphene.
A semiconductor device comprising a graphene wiring, the graphene wiring comprising: graphene; first conductive layers; second conductive layers; and 15 a third conductive layer, wherein the first conductive layers are connected to SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.19.377.1706.1951.1757.svg 0.17 5.247 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.20.378.1789.1423.1839.svg 0.167 3.483 Graph Black and white the second conductive layers are connected to second SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.22.249.1935.2068.1991.svg 0.187 6.063 Graph Black and white direction of the wiring, the third conductive layer is connected to a top surface of the graphene, and the first and second conductive layers are connected to 25 each other.
The device according to claim 7, wherein SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.29.556.2553.2044.2608.svg 0.183 4.96 Graph Black and white least two layers, and SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.31.261.2708.2083.2760.svg 0.173 6.073 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.32.394.2784.2083.2840.svg 0.187 5.63 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.33.393.2862.1968.2918.svg 0.187 5.25 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.34.394.2939.2086.2990.svg 0.17 5.64 Graph Black and white graphene. 18 G08 1 986-USA-A FTS O₉ 91-US-A
The device according to claim 7, wherein the second conductive layers are connected to the whole of the second sides SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.6.365.705.1938.757.svg 0.173 5.243 Graph Black and white 5 direction of the wiring.
The device according to claim 7, wherein the third SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.9.370.1012.2061.1065.svg 0.177 5.637 Graph Black and white second conductive layers.
The device according to claim 7, wherein the graphene has a width of 5 nm to 100 nm.
The device according to claim 7, wherein at least SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.15.250.1548.1980.1604.svg 0.187 5.767 Graph Black and white connected by adhesion to the graphene. 19
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring
semiconductor device comprising graphene wiring
Materials described outside the worked examples.
graphene
multilayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a schematic cross-sectional view of part of a SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235560.19.247.1548.2066.1601.svg 0.177 6.063 Graph Black …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–100 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 9,184,133Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic perspective view of a wiring of 1 G081986-USA-A FTS 0 991-US-A an embodiment; [0006]
FIG. 2 is a schematic cross-sectional view of a wiring of an embodiment; [0007]
FIG. 3 is a schematic cross-sectional view of a wiring 5 of an embodiment; SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235554.10.380.854.2060.905.svg 0.17 …
FIG. 4 is a schematic cross-sectional view of the section X₃ in
FIG. 5. When the second and third conductive layers 10 and 11 are made of the same material, the second and third conductive layers 10 and 11 may be formed at …
FIG. 6 is a schematic cross-sectional view of part of a SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235560.19.247.1548.2066.1601.svg 0.177 6.063 Graph Black …
FIG. 8 shows the step of forming a lower wiring layer and an interlayer insulating film. First, a lower wiring layer 2 is formed on a substrate 1 on which a …
FIG. 9, via holes 4 passing through the first interlayer 5 insulating film 3 to the lower wiring layer 2 are formed, for example, by dry etching using …
FIG. 10, via wiring 5 is then formed in each via hole 4. I n this case, the via wiring 5 may be made of carbon nanotubes or a metal element such as Cu. For …
FIG. 13, an insulating film 8 is formed as an etching mask SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235566.16.376.1397.2067.1453.svg 0.187 5.637 Graph …
FIG. 14. 30
FIG. 15 is a schematic cross-sectional view of a semiconductor device having a wiring of an embodiment; and [0020]
FIG. 16 is a schematic cross-sectional view of a semiconductor device having a wiring of an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene wiring comprising: graphene; 5 first conductive layers; second conductive layers; and a third conductive layer, wherein the first conductive layers are connected to first sides of the graphene opposite to each other in a SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.12.243.1169.1417.1219.svg 0.167 3.913 Graph Black and white the second conductive layers are connected to second SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.14.376.1317.2060.1370.svg 0.177 5.613 Graph Black and white direction of the wiring, the third conductive layer is connected to a top surface 15 of the graphene, and the first and second conductive layers are connected to each other. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.20.552.1857.1802.1908.svg 0.17 4.167 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.21.255.1932.2038.1990.svg 0.193 5.943 Graph Black and white least two layers, and SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.23.555.2086.2078.2137.svg 0.17 5.077 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.24.390.2163.2077.2222.svg 0.197 5.623 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.25.390.2241.1964.2300.svg 0.197 5.247 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.26.261.2318.2079.2373.svg 0.183 6.06 Graph Black and white graphene. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.28.564.2549.2086.2604.svg 0.183 5.073 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.29.397.2627.2084.2684.svg 0.19 5.623 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.30.268.2705.1972.2763.svg 0.193 5.68 Graph Black and white direction of the wiring. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.32.570.2935.2091.2991.svg 0.187 5.07 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.33.404.3012.2092.3066.svg 0.18 5.627 Graph Black and white 17 G081986-USA-A FTS099 1-US-A and second conductive layers. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.5.530.631.2051.681.svg 0.167 5.07 Graph Black and white has a width of 5 nm to 100 nm.
6. The graphene wiring according to claim 1, wherein at least one of the first, second, and third conductive layers is connected by adhesion to the graphene.
A semiconductor device comprising a graphene wiring, the graphene wiring comprising: graphene; first conductive layers; second conductive layers; and 15 a third conductive layer, wherein the first conductive layers are connected to SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.19.377.1706.1951.1757.svg 0.17 5.247 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.20.378.1789.1423.1839.svg 0.167 3.483 Graph Black and white the second conductive layers are connected to second SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.22.249.1935.2068.1991.svg 0.187 6.063 Graph Black and white direction of the wiring, the third conductive layer is connected to a top surface of the graphene, and the first and second conductive layers are connected to 25 each other.
The device according to claim 7, wherein SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.29.556.2553.2044.2608.svg 0.183 4.96 Graph Black and white least two layers, and SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.31.261.2708.2083.2760.svg 0.173 6.073 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.32.394.2784.2083.2840.svg 0.187 5.63 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.33.393.2862.1968.2918.svg 0.187 5.25 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.34.394.2939.2086.2990.svg 0.17 5.64 Graph Black and white graphene. 18 G08 1 986-USA-A FTS O₉ 91-US-A
The device according to claim 7, wherein the second conductive layers are connected to the whole of the second sides SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.6.365.705.1938.757.svg 0.173 5.243 Graph Black and white 5 direction of the wiring.
The device according to claim 7, wherein the third SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.9.370.1012.2061.1065.svg 0.177 5.637 Graph Black and white second conductive layers.
The device according to claim 7, wherein the graphene has a width of 5 nm to 100 nm.
The device according to claim 7, wherein at least SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.15.250.1548.1980.1604.svg 0.187 5.767 Graph Black and white connected by adhesion to the graphene. 19
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring
semiconductor device comprising graphene wiring
Materials described outside the worked examples.
graphene
multilayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a schematic cross-sectional view of part of a SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235560.19.247.1548.2066.1601.svg 0.177 6.063 Graph Black …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–100 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,184,133Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic perspective view of a wiring of 1 G081986-USA-A FTS 0 991-US-A an embodiment; [0006]
FIG. 2 is a schematic cross-sectional view of a wiring of an embodiment; [0007]
FIG. 3 is a schematic cross-sectional view of a wiring 5 of an embodiment; SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235554.10.380.854.2060.905.svg 0.17 …
FIG. 4 is a schematic cross-sectional view of the section X₃ in
FIG. 5. When the second and third conductive layers 10 and 11 are made of the same material, the second and third conductive layers 10 and 11 may be formed at …
FIG. 6 is a schematic cross-sectional view of part of a SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235560.19.247.1548.2066.1601.svg 0.177 6.063 Graph Black …
FIG. 8 shows the step of forming a lower wiring layer and an interlayer insulating film. First, a lower wiring layer 2 is formed on a substrate 1 on which a …
FIG. 9, via holes 4 passing through the first interlayer 5 insulating film 3 to the lower wiring layer 2 are formed, for example, by dry etching using …
FIG. 10, via wiring 5 is then formed in each via hole 4. I n this case, the via wiring 5 may be made of carbon nanotubes or a metal element such as Cu. For …
FIG. 13, an insulating film 8 is formed as an etching mask SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235566.16.376.1397.2067.1453.svg 0.187 5.637 Graph …
FIG. 14. 30
FIG. 15 is a schematic cross-sectional view of a semiconductor device having a wiring of an embodiment; and [0020]
FIG. 16 is a schematic cross-sectional view of a semiconductor device having a wiring of an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene wiring comprising: graphene; 5 first conductive layers; second conductive layers; and a third conductive layer, wherein the first conductive layers are connected to first sides of the graphene opposite to each other in a SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.12.243.1169.1417.1219.svg 0.167 3.913 Graph Black and white the second conductive layers are connected to second SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.14.376.1317.2060.1370.svg 0.177 5.613 Graph Black and white direction of the wiring, the third conductive layer is connected to a top surface 15 of the graphene, and the first and second conductive layers are connected to each other. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.20.552.1857.1802.1908.svg 0.17 4.167 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.21.255.1932.2038.1990.svg 0.193 5.943 Graph Black and white least two layers, and SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.23.555.2086.2078.2137.svg 0.17 5.077 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.24.390.2163.2077.2222.svg 0.197 5.623 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.25.390.2241.1964.2300.svg 0.197 5.247 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.26.261.2318.2079.2373.svg 0.183 6.06 Graph Black and white graphene. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.28.564.2549.2086.2604.svg 0.183 5.073 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.29.397.2627.2084.2684.svg 0.19 5.623 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.30.268.2705.1972.2763.svg 0.193 5.68 Graph Black and white direction of the wiring. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.32.570.2935.2091.2991.svg 0.187 5.07 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165093.33.404.3012.2092.3066.svg 0.18 5.627 Graph Black and white 17 G081986-USA-A FTS099 1-US-A and second conductive layers. SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.5.530.631.2051.681.svg 0.167 5.07 Graph Black and white has a width of 5 nm to 100 nm.
6. The graphene wiring according to claim 1, wherein at least one of the first, second, and third conductive layers is connected by adhesion to the graphene.
A semiconductor device comprising a graphene wiring, the graphene wiring comprising: graphene; first conductive layers; second conductive layers; and 15 a third conductive layer, wherein the first conductive layers are connected to SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.19.377.1706.1951.1757.svg 0.17 5.247 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.20.378.1789.1423.1839.svg 0.167 3.483 Graph Black and white the second conductive layers are connected to second SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.22.249.1935.2068.1991.svg 0.187 6.063 Graph Black and white direction of the wiring, the third conductive layer is connected to a top surface of the graphene, and the first and second conductive layers are connected to 25 each other.
The device according to claim 7, wherein SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.29.556.2553.2044.2608.svg 0.183 4.96 Graph Black and white least two layers, and SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.31.261.2708.2083.2760.svg 0.173 6.073 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.32.394.2784.2083.2840.svg 0.187 5.63 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.33.393.2862.1968.2918.svg 0.187 5.25 Graph Black and white SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165094.34.394.2939.2086.2990.svg 0.17 5.64 Graph Black and white graphene. 18 G08 1 986-USA-A FTS O₉ 91-US-A
The device according to claim 7, wherein the second conductive layers are connected to the whole of the second sides SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.6.365.705.1938.757.svg 0.173 5.243 Graph Black and white 5 direction of the wiring.
The device according to claim 7, wherein the third SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.9.370.1012.2061.1065.svg 0.177 5.637 Graph Black and white second conductive layers.
The device according to claim 7, wherein the graphene has a width of 5 nm to 100 nm.
The device according to claim 7, wherein at least SVG 14658442.03-16-2015.I₇C₃WEG₄PXXIFW3.CLM15165095.15.250.1548.1980.1604.svg 0.187 5.767 Graph Black and white connected by adhesion to the graphene. 19
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring
semiconductor device comprising graphene wiring
Materials described outside the worked examples.
graphene
multilayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a schematic cross-sectional view of part of a SVG 14658442.03-16-2015.I₇C₃WEEQPXXIFW3.SPEC12235560.19.247.1548.2066.1601.svg 0.177 6.063 Graph Black …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–100 nm | — |
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