Patent
US 10,001,529Low Offset Graphene Hall Sensor
Arup Polley
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,001,529Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is an illustration of an exemplary a Graphene Hall sensor (GHS) device;
Figure 2 is a side view of the GHS of
Figure 3 is an equivalent electrical model of a Hall sensor
Figure 4 is a plot illustrating Graphene channel conductivity as a function of gate voltage;
Figure 5 is a plot illustrating Graphene current-related sensitivity as a function of gate voltage;
Figure 6 is a plot illustrating modulation of the gate voltage of a GHS;
Figure 7 is an illustration of an equivalent electrical model of a GHS;
Figures 8A-8D are plots illustrating operation of a GHS;
Figure 9 shows the frequency domain representation of output of the GHS of
Figure 11 is a block diagram of an exemplary modulated gate GHS;
Figure 12 is a flow chart illustrating operation of a GHS according to
Figure 8; and
Figures 13 and 14 are exemplary illustrations of systems that may include a GHS. [0021] Other features of the present embodiments will be apparent from the accompanying drawings and from the detailed description that follows.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of operating a graphene Hall sensor, the method comprising: providing a modulated gate signal to a first gate of the graphene Hall sensor (GHS), in which the modulated gate signal alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces a second conductivity state in the GHS, the second conductivity state having a same conductivity as the first conductivity state; providing a bias current through a first axis of the GHS; obtaining a resultant output voltage signal across a second axis of the Hall sensor that includes a modulated Hall voltage and an offset voltage, in which the Hall voltage is modulated at the modulation frequency; and extracting an amplitude of the Hall voltage that does not include the offset voltage. Currently amended
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed by synchronous demodulation of the output voltage signal. Original
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed by bandpass filtering the output voltage signal. Previously presented
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed using a Fast Fourier Transform. Previously presented
The method of Claim 1, in which the modulated gate signal is modulated at a frequency in a range of 10-100 MHz. Previously presented
The method of Claim 1, in which the first gate is a top gate and the GHS has a back gate, in which the modulated gate signal is provided to the top gate and an adaptively controlled voltage is applied to the back gate. Previously presented
The method of Claim 1, in which the first gate is a back gate, in which the modulated gate signal is provided to the back gate. Previously presented
The method of Claim 1, in which the modulated gate signal is modulated between a negative voltage amplitude VG₁ and a positive voltage amplitude VG₂ to cause the GHS to switch between two equal conductivity states that result in equal offset voltages at each state. Previously presented
A Hall effect sensor system comprising: a graphene Hall sensor (GHS) having a graphene layer with a first pair of contacts configured to provide a bias current through a first axis of the graphene layer and a second pair of contacts configured to measure a Hall effect voltage across a second axis of the graphene layer and a conductive first gate spaced apart from the graphene layer by a dielectric, in which the Hall effect voltage includes an offset voltage; an oscillator coupled to the gate configured to provide a modulated gate signal that alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces a second conductivity state in the GHS, the second conductivity state having a same conductivity as the first conductivity state; and a demodulator coupled to receive the Hall effect voltage configured to extract an amplitude of the Hall effect voltage that does not include the offset voltage. Currently amended
The system of Claim 9, in which the first gate is a top gate that covers only a channel portion of the GHS and does not cover the first pair of contacts and the second pair of contacts. Previously presented
The system of Claim 9, in which the demodulator includes a local oscillator coupled to a mixer, and in which the second pair of contacts are coupled to the mixer via a low noise amplifier. Previously presented
The system of Claim 9, in which the demodulator includes a bandpass filter. Previously presented
The system of Claim 9, in which the demodulator includes an analog to digital converter and a processor configured to perform a Fast Fourier Transform of the Hall Effect voltage. Previously presented
The system of Claim 9, in which the oscillator is configured to provide the modulated gate signal with a modulation frequency in a range of 10-100 MHz. Previously presented
The system of Claim 9, in which the first gate is a top gate and the GHS has a back gate, in which the modulated gate signal from the oscillator is applied to the top gate and an adaptively controlled voltage source is applied to the back gate. Previously presented
The system of Claim 9, in which the first gate is a back gate, in which the modulated gate signal from the oscillator is applied to the back gate. Previously presented
The system of Claim 9, further including a fuel tank, in which the GHS is coupled to the fuel tank. Original
The system of Claim 9, in which the GHS is coupled to flux core that surrounds a conductive wire. Original
A method of operating a Hall effect sensor, the method comprising: applying an oscillating gate voltage at a modulation frequency to a first gate of the Hall effect sensor, wherein the gate voltage oscillates between a first voltage that produces a first conductivity state in the Hall effect sensor and a second voltage that produces a second conductivity state in the Hall effect sensor, the second conductivity state having a same conductivity as the first conductivity state; conducting a bias current through a first axis of the Hall effect sensor; producing an output voltage signal across a second axis of the Hall effect sensor that includes a Hall voltage modulated at the modulation frequency and an offset voltage; and extracting an amplitude of the Hall voltage that does not include the offset voltage. Previously presented
The method of claim 19, comprising: mixing an oscillator voltage at the modulation frequency with the modulated Hall voltage to produce a demodulated output signal; and SVG 14936631.05-04-2018.JGS₈G₂YHRXEAPX4.CLM.1.svg 0.16 2.62 Black and white Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene Hall sensor
Materials described outside the worked examples.
graphene
C
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is an equivalent electrical model of a Hall sensor
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene electron mobility (exemplary GHS device, description) | 10000 cm²/(V·s) | C |
graphene electron mobility range (background, comparison to silicon) | 4500–40000 cm²/(V·s) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,001,529Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is an illustration of an exemplary a Graphene Hall sensor (GHS) device;
Figure 2 is a side view of the GHS of
Figure 3 is an equivalent electrical model of a Hall sensor
Figure 4 is a plot illustrating Graphene channel conductivity as a function of gate voltage;
Figure 5 is a plot illustrating Graphene current-related sensitivity as a function of gate voltage;
Figure 6 is a plot illustrating modulation of the gate voltage of a GHS;
Figure 7 is an illustration of an equivalent electrical model of a GHS;
Figures 8A-8D are plots illustrating operation of a GHS;
Figure 9 shows the frequency domain representation of output of the GHS of
Figure 11 is a block diagram of an exemplary modulated gate GHS;
Figure 12 is a flow chart illustrating operation of a GHS according to
Figure 8; and
Figures 13 and 14 are exemplary illustrations of systems that may include a GHS. [0021] Other features of the present embodiments will be apparent from the accompanying drawings and from the detailed description that follows.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of operating a graphene Hall sensor, the method comprising: providing a modulated gate signal to a first gate of the graphene Hall sensor (GHS), in which the modulated gate signal alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces a second conductivity state in the GHS, the second conductivity state having a same conductivity as the first conductivity state; providing a bias current through a first axis of the GHS; obtaining a resultant output voltage signal across a second axis of the Hall sensor that includes a modulated Hall voltage and an offset voltage, in which the Hall voltage is modulated at the modulation frequency; and extracting an amplitude of the Hall voltage that does not include the offset voltage. Currently amended
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed by synchronous demodulation of the output voltage signal. Original
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed by bandpass filtering the output voltage signal. Previously presented
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed using a Fast Fourier Transform. Previously presented
The method of Claim 1, in which the modulated gate signal is modulated at a frequency in a range of 10-100 MHz. Previously presented
The method of Claim 1, in which the first gate is a top gate and the GHS has a back gate, in which the modulated gate signal is provided to the top gate and an adaptively controlled voltage is applied to the back gate. Previously presented
The method of Claim 1, in which the first gate is a back gate, in which the modulated gate signal is provided to the back gate. Previously presented
The method of Claim 1, in which the modulated gate signal is modulated between a negative voltage amplitude VG₁ and a positive voltage amplitude VG₂ to cause the GHS to switch between two equal conductivity states that result in equal offset voltages at each state. Previously presented
A Hall effect sensor system comprising: a graphene Hall sensor (GHS) having a graphene layer with a first pair of contacts configured to provide a bias current through a first axis of the graphene layer and a second pair of contacts configured to measure a Hall effect voltage across a second axis of the graphene layer and a conductive first gate spaced apart from the graphene layer by a dielectric, in which the Hall effect voltage includes an offset voltage; an oscillator coupled to the gate configured to provide a modulated gate signal that alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces a second conductivity state in the GHS, the second conductivity state having a same conductivity as the first conductivity state; and a demodulator coupled to receive the Hall effect voltage configured to extract an amplitude of the Hall effect voltage that does not include the offset voltage. Currently amended
The system of Claim 9, in which the first gate is a top gate that covers only a channel portion of the GHS and does not cover the first pair of contacts and the second pair of contacts. Previously presented
The system of Claim 9, in which the demodulator includes a local oscillator coupled to a mixer, and in which the second pair of contacts are coupled to the mixer via a low noise amplifier. Previously presented
The system of Claim 9, in which the demodulator includes a bandpass filter. Previously presented
The system of Claim 9, in which the demodulator includes an analog to digital converter and a processor configured to perform a Fast Fourier Transform of the Hall Effect voltage. Previously presented
The system of Claim 9, in which the oscillator is configured to provide the modulated gate signal with a modulation frequency in a range of 10-100 MHz. Previously presented
The system of Claim 9, in which the first gate is a top gate and the GHS has a back gate, in which the modulated gate signal from the oscillator is applied to the top gate and an adaptively controlled voltage source is applied to the back gate. Previously presented
The system of Claim 9, in which the first gate is a back gate, in which the modulated gate signal from the oscillator is applied to the back gate. Previously presented
The system of Claim 9, further including a fuel tank, in which the GHS is coupled to the fuel tank. Original
The system of Claim 9, in which the GHS is coupled to flux core that surrounds a conductive wire. Original
A method of operating a Hall effect sensor, the method comprising: applying an oscillating gate voltage at a modulation frequency to a first gate of the Hall effect sensor, wherein the gate voltage oscillates between a first voltage that produces a first conductivity state in the Hall effect sensor and a second voltage that produces a second conductivity state in the Hall effect sensor, the second conductivity state having a same conductivity as the first conductivity state; conducting a bias current through a first axis of the Hall effect sensor; producing an output voltage signal across a second axis of the Hall effect sensor that includes a Hall voltage modulated at the modulation frequency and an offset voltage; and extracting an amplitude of the Hall voltage that does not include the offset voltage. Previously presented
The method of claim 19, comprising: mixing an oscillator voltage at the modulation frequency with the modulated Hall voltage to produce a demodulated output signal; and SVG 14936631.05-04-2018.JGS₈G₂YHRXEAPX4.CLM.1.svg 0.16 2.62 Black and white Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene Hall sensor
Materials described outside the worked examples.
graphene
C
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is an equivalent electrical model of a Hall sensor
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene electron mobility (exemplary GHS device, description) | 10000 cm²/(V·s) | C |
graphene electron mobility range (background, comparison to silicon) | 4500–40000 cm²/(V·s) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,001,529Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is an illustration of an exemplary a Graphene Hall sensor (GHS) device;
Figure 2 is a side view of the GHS of
Figure 3 is an equivalent electrical model of a Hall sensor
Figure 4 is a plot illustrating Graphene channel conductivity as a function of gate voltage;
Figure 5 is a plot illustrating Graphene current-related sensitivity as a function of gate voltage;
Figure 6 is a plot illustrating modulation of the gate voltage of a GHS;
Figure 7 is an illustration of an equivalent electrical model of a GHS;
Figures 8A-8D are plots illustrating operation of a GHS;
Figure 9 shows the frequency domain representation of output of the GHS of
Figure 11 is a block diagram of an exemplary modulated gate GHS;
Figure 12 is a flow chart illustrating operation of a GHS according to
Figure 8; and
Figures 13 and 14 are exemplary illustrations of systems that may include a GHS. [0021] Other features of the present embodiments will be apparent from the accompanying drawings and from the detailed description that follows.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of operating a graphene Hall sensor, the method comprising: providing a modulated gate signal to a first gate of the graphene Hall sensor (GHS), in which the modulated gate signal alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces a second conductivity state in the GHS, the second conductivity state having a same conductivity as the first conductivity state; providing a bias current through a first axis of the GHS; obtaining a resultant output voltage signal across a second axis of the Hall sensor that includes a modulated Hall voltage and an offset voltage, in which the Hall voltage is modulated at the modulation frequency; and extracting an amplitude of the Hall voltage that does not include the offset voltage. Currently amended
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed by synchronous demodulation of the output voltage signal. Original
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed by bandpass filtering the output voltage signal. Previously presented
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed using a Fast Fourier Transform. Previously presented
The method of Claim 1, in which the modulated gate signal is modulated at a frequency in a range of 10-100 MHz. Previously presented
The method of Claim 1, in which the first gate is a top gate and the GHS has a back gate, in which the modulated gate signal is provided to the top gate and an adaptively controlled voltage is applied to the back gate. Previously presented
The method of Claim 1, in which the first gate is a back gate, in which the modulated gate signal is provided to the back gate. Previously presented
The method of Claim 1, in which the modulated gate signal is modulated between a negative voltage amplitude VG₁ and a positive voltage amplitude VG₂ to cause the GHS to switch between two equal conductivity states that result in equal offset voltages at each state. Previously presented
A Hall effect sensor system comprising: a graphene Hall sensor (GHS) having a graphene layer with a first pair of contacts configured to provide a bias current through a first axis of the graphene layer and a second pair of contacts configured to measure a Hall effect voltage across a second axis of the graphene layer and a conductive first gate spaced apart from the graphene layer by a dielectric, in which the Hall effect voltage includes an offset voltage; an oscillator coupled to the gate configured to provide a modulated gate signal that alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces a second conductivity state in the GHS, the second conductivity state having a same conductivity as the first conductivity state; and a demodulator coupled to receive the Hall effect voltage configured to extract an amplitude of the Hall effect voltage that does not include the offset voltage. Currently amended
The system of Claim 9, in which the first gate is a top gate that covers only a channel portion of the GHS and does not cover the first pair of contacts and the second pair of contacts. Previously presented
The system of Claim 9, in which the demodulator includes a local oscillator coupled to a mixer, and in which the second pair of contacts are coupled to the mixer via a low noise amplifier. Previously presented
The system of Claim 9, in which the demodulator includes a bandpass filter. Previously presented
The system of Claim 9, in which the demodulator includes an analog to digital converter and a processor configured to perform a Fast Fourier Transform of the Hall Effect voltage. Previously presented
The system of Claim 9, in which the oscillator is configured to provide the modulated gate signal with a modulation frequency in a range of 10-100 MHz. Previously presented
The system of Claim 9, in which the first gate is a top gate and the GHS has a back gate, in which the modulated gate signal from the oscillator is applied to the top gate and an adaptively controlled voltage source is applied to the back gate. Previously presented
The system of Claim 9, in which the first gate is a back gate, in which the modulated gate signal from the oscillator is applied to the back gate. Previously presented
The system of Claim 9, further including a fuel tank, in which the GHS is coupled to the fuel tank. Original
The system of Claim 9, in which the GHS is coupled to flux core that surrounds a conductive wire. Original
A method of operating a Hall effect sensor, the method comprising: applying an oscillating gate voltage at a modulation frequency to a first gate of the Hall effect sensor, wherein the gate voltage oscillates between a first voltage that produces a first conductivity state in the Hall effect sensor and a second voltage that produces a second conductivity state in the Hall effect sensor, the second conductivity state having a same conductivity as the first conductivity state; conducting a bias current through a first axis of the Hall effect sensor; producing an output voltage signal across a second axis of the Hall effect sensor that includes a Hall voltage modulated at the modulation frequency and an offset voltage; and extracting an amplitude of the Hall voltage that does not include the offset voltage. Previously presented
The method of claim 19, comprising: mixing an oscillator voltage at the modulation frequency with the modulated Hall voltage to produce a demodulated output signal; and SVG 14936631.05-04-2018.JGS₈G₂YHRXEAPX4.CLM.1.svg 0.16 2.62 Black and white Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene Hall sensor
Materials described outside the worked examples.
graphene
C
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is an equivalent electrical model of a Hall sensor
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene electron mobility (exemplary GHS device, description) | 10000 cm²/(V·s) | C |
graphene electron mobility range (background, comparison to silicon) | 4500–40000 cm²/(V·s) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,001,529Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is an illustration of an exemplary a Graphene Hall sensor (GHS) device;
Figure 2 is a side view of the GHS of
Figure 3 is an equivalent electrical model of a Hall sensor
Figure 4 is a plot illustrating Graphene channel conductivity as a function of gate voltage;
Figure 5 is a plot illustrating Graphene current-related sensitivity as a function of gate voltage;
Figure 6 is a plot illustrating modulation of the gate voltage of a GHS;
Figure 7 is an illustration of an equivalent electrical model of a GHS;
Figures 8A-8D are plots illustrating operation of a GHS;
Figure 9 shows the frequency domain representation of output of the GHS of
Figure 11 is a block diagram of an exemplary modulated gate GHS;
Figure 12 is a flow chart illustrating operation of a GHS according to
Figure 8; and
Figures 13 and 14 are exemplary illustrations of systems that may include a GHS. [0021] Other features of the present embodiments will be apparent from the accompanying drawings and from the detailed description that follows.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of operating a graphene Hall sensor, the method comprising: providing a modulated gate signal to a first gate of the graphene Hall sensor (GHS), in which the modulated gate signal alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces a second conductivity state in the GHS, the second conductivity state having a same conductivity as the first conductivity state; providing a bias current through a first axis of the GHS; obtaining a resultant output voltage signal across a second axis of the Hall sensor that includes a modulated Hall voltage and an offset voltage, in which the Hall voltage is modulated at the modulation frequency; and extracting an amplitude of the Hall voltage that does not include the offset voltage. Currently amended
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed by synchronous demodulation of the output voltage signal. Original
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed by bandpass filtering the output voltage signal. Previously presented
The method of Claim 1, in which extracting the amplitude of the Hall voltage is performed using a Fast Fourier Transform. Previously presented
The method of Claim 1, in which the modulated gate signal is modulated at a frequency in a range of 10-100 MHz. Previously presented
The method of Claim 1, in which the first gate is a top gate and the GHS has a back gate, in which the modulated gate signal is provided to the top gate and an adaptively controlled voltage is applied to the back gate. Previously presented
The method of Claim 1, in which the first gate is a back gate, in which the modulated gate signal is provided to the back gate. Previously presented
The method of Claim 1, in which the modulated gate signal is modulated between a negative voltage amplitude VG₁ and a positive voltage amplitude VG₂ to cause the GHS to switch between two equal conductivity states that result in equal offset voltages at each state. Previously presented
A Hall effect sensor system comprising: a graphene Hall sensor (GHS) having a graphene layer with a first pair of contacts configured to provide a bias current through a first axis of the graphene layer and a second pair of contacts configured to measure a Hall effect voltage across a second axis of the graphene layer and a conductive first gate spaced apart from the graphene layer by a dielectric, in which the Hall effect voltage includes an offset voltage; an oscillator coupled to the gate configured to provide a modulated gate signal that alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces a second conductivity state in the GHS, the second conductivity state having a same conductivity as the first conductivity state; and a demodulator coupled to receive the Hall effect voltage configured to extract an amplitude of the Hall effect voltage that does not include the offset voltage. Currently amended
The system of Claim 9, in which the first gate is a top gate that covers only a channel portion of the GHS and does not cover the first pair of contacts and the second pair of contacts. Previously presented
The system of Claim 9, in which the demodulator includes a local oscillator coupled to a mixer, and in which the second pair of contacts are coupled to the mixer via a low noise amplifier. Previously presented
The system of Claim 9, in which the demodulator includes a bandpass filter. Previously presented
The system of Claim 9, in which the demodulator includes an analog to digital converter and a processor configured to perform a Fast Fourier Transform of the Hall Effect voltage. Previously presented
The system of Claim 9, in which the oscillator is configured to provide the modulated gate signal with a modulation frequency in a range of 10-100 MHz. Previously presented
The system of Claim 9, in which the first gate is a top gate and the GHS has a back gate, in which the modulated gate signal from the oscillator is applied to the top gate and an adaptively controlled voltage source is applied to the back gate. Previously presented
The system of Claim 9, in which the first gate is a back gate, in which the modulated gate signal from the oscillator is applied to the back gate. Previously presented
The system of Claim 9, further including a fuel tank, in which the GHS is coupled to the fuel tank. Original
The system of Claim 9, in which the GHS is coupled to flux core that surrounds a conductive wire. Original
A method of operating a Hall effect sensor, the method comprising: applying an oscillating gate voltage at a modulation frequency to a first gate of the Hall effect sensor, wherein the gate voltage oscillates between a first voltage that produces a first conductivity state in the Hall effect sensor and a second voltage that produces a second conductivity state in the Hall effect sensor, the second conductivity state having a same conductivity as the first conductivity state; conducting a bias current through a first axis of the Hall effect sensor; producing an output voltage signal across a second axis of the Hall effect sensor that includes a Hall voltage modulated at the modulation frequency and an offset voltage; and extracting an amplitude of the Hall voltage that does not include the offset voltage. Previously presented
The method of claim 19, comprising: mixing an oscillator voltage at the modulation frequency with the modulated Hall voltage to produce a demodulated output signal; and SVG 14936631.05-04-2018.JGS₈G₂YHRXEAPX4.CLM.1.svg 0.16 2.62 Black and white Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene Hall sensor
Materials described outside the worked examples.
graphene
C
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is an equivalent electrical model of a Hall sensor
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene electron mobility (exemplary GHS device, description) | 10000 cm²/(V·s) | C |
graphene electron mobility range (background, comparison to silicon) | 4500–40000 cm²/(V·s) |
Related documents with shared materials, methods, properties, or citations.
Figure 4 is a plot illustrating Graphene channel conductivity as a function of gate voltage;
Figure 5 is a plot illustrating Graphene current-related sensitivity as a function of gate voltage;
Figure 6 is a plot illustrating modulation of the gate voltage of a GHS;
Figure 7 is an illustration of an equivalent electrical model of a GHS;
GRAPHENE-TRANSFERRING MEMBER, GRAPHENE TRANSFERRER, METHOD OF TRANSFERRING GRAPHENE, AND METHODS OF FABRICATING GRAPHENE DEVICE BY USING THE SAME
Figure 4 is a plot illustrating Graphene channel conductivity as a function of gate voltage;
Figure 5 is a plot illustrating Graphene current-related sensitivity as a function of gate voltage;
Figure 6 is a plot illustrating modulation of the gate voltage of a GHS;
Figure 7 is an illustration of an equivalent electrical model of a GHS;
GRAPHENE-TRANSFERRING MEMBER, GRAPHENE TRANSFERRER, METHOD OF TRANSFERRING GRAPHENE, AND METHODS OF FABRICATING GRAPHENE DEVICE BY USING THE SAME
Figure 4 is a plot illustrating Graphene channel conductivity as a function of gate voltage;
Figure 5 is a plot illustrating Graphene current-related sensitivity as a function of gate voltage;
Figure 6 is a plot illustrating modulation of the gate voltage of a GHS;
Figure 7 is an illustration of an equivalent electrical model of a GHS;
GRAPHENE-TRANSFERRING MEMBER, GRAPHENE TRANSFERRER, METHOD OF TRANSFERRING GRAPHENE, AND METHODS OF FABRICATING GRAPHENE DEVICE BY USING THE SAME
Figure 4 is a plot illustrating Graphene channel conductivity as a function of gate voltage;
Figure 5 is a plot illustrating Graphene current-related sensitivity as a function of gate voltage;
Figure 6 is a plot illustrating modulation of the gate voltage of a GHS;
Figure 7 is an illustration of an equivalent electrical model of a GHS;
GRAPHENE-TRANSFERRING MEMBER, GRAPHENE TRANSFERRER, METHOD OF TRANSFERRING GRAPHENE, AND METHODS OF FABRICATING GRAPHENE DEVICE BY USING THE SAME