Patent
US 10,069,065LOW NOISE GRAPHENE HALL SENSORS, SYSTEMS AND METHODS OF MAKING AND USING SAME
Arup Polley
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,069,065Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in this example, the excitation contact structures 1 06a and 106b are formed of copper or other suitable conductive material to provide ohmic contacts …
FIGS. 2 and 3) increases in either the positive or negative direction. According l y, the sensitivity is adjustable through a wide range for VG adjustments …
FIGS. 3, 9, 11, 13 and 15). At 1906, a conductive gate contract structure and one or more sensor excitation contacts are formed over the dielectric, providing …
FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
FIG. 5 shows that the current sensitivity (V/AT) increases from zero along a relatively steep linear region in opposite polarity directions, as the gate …
FIG. 6. [0050] With respect to voltage sensitivity (V/VT) in the graph 700 of
FIG. 7, the curve 702 illustrates-a relatively steep gate voltage sensitivity adjustment range in one example of approximately +/- 5 V, and the curve 802 in
FIG. 8 shows a corresponding sharp reduction in the minimum detectable field as the gate voltage VG is adjusted away from zero. As a result, the adaptive gave …
FIGS. 9-11 illustrate another gate-controlled graphene Hall sensor 100 with one or more capacitive coupling structures 200. In this example, the excitation …
FIG. 10 is a top plan view of the second graphene Hall sensor of
FIG. 11 advantageously facilitates AC coupling of the Hall sensor output signal to the excitation and sensing circuitry 412 for further processing and …
FIG. 12 is a schematic diagram of a gate controlled graphene Hall sensor and a sensitivity control and gate modulation circuit with a modulator for modulating …
FIG. 13. In this manner, capacitive contacts are provided for the excitation connections to the Hall sensor 100, which provide low impedance coupling along …
FIG. 14 is a top plan view of the third graphene Hall sensor of
FIG. 15 is a sectional end elevation view of the third graphene Hall sensor taken along line 15-15 of
FIG. 16 shows a temperature compensated applied gate voltage curve 1602 (VG) provided from the local adaptive sensitivity control circuit 413 in the sensor …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 18. At 1808, the IC 410 selectively adjusts the Hall sensor gate voltage signal amplitude, at least partially according to the received control input …
FIG. 19. The device 2100 includes a graphene layer 2104 formed over a substrate 2102, as in the graphene Hall sensor devices 100. The graphene transistor …
FIG. 20, the common drain amplifier circuit 2000 receives an input voltage VI, which is provided through a filter circuit formed by resistors R 5 and R₆ and an …
FIG. 21). The circuit 2000 uses the capacitively coupled contacts and the associated capacitances C 1 and C₂ for coupling with the source/drain regions 2104S …
FIG. 22 is a schematic diagram illustrating a magnetic sensor with integral capacitive coupling of a graphene Hall sensor sense contact with an instrumentation …
FIG. 23.
FIG. 24 illustrates a frequency response curve 2402 corresponding to the system 2200 of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A magnetic sensor system, comprising: a graphene Hall sensor for sensing a magnetic field, including: a graphene layer formed on a substrate; a dielectric structure formed over a channel portion of the graphene layer; a conductive gate structure formed over at least a portion of the dielectric structure above the channel portion of the graphene layer for applying a gate voltage to control a carrier concentration of the channel portion of the graphene layer; first and second conductive excitation contact structures coupled with corresponding first and second excitation portions of the graphene layer for applying at least one of the following to the channel portion of the graphene layer: a bias voltage; and a bias current; and first and second conductive sense contact structures coupled with corresponding first and second sense portions of the graphene layer for sensing a Hall voltage of the channel portion of the graphene layer; a sensor interface circuit for providing at least one of an excitation current and voltage to the graphene layer via the first and second conductive excitation contact structures, and for receiving an output signal from at least one of the first and second conductive sense contact structures representing the magnetic field; and a control circuit that includes an AC modulator to apply an alternating square wave voltage signal to the conductive gate structure at a modulating frequency to alternately increase a magnetic field sensitivity of the Hall sensor in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; the sensor interface circuit including a demodulator to demodulate the output signal at the modulating frequency to provide a demodulated output signal representing the magnetic field. Currently amended
The magnetic sensor system of claim 1, wherein at least one of the conductive excitation and sense contact structures is capacitively coupled with its corresponding portion of the graphene layer. Original
The magnetic sensor system of claim 1, wherein the modulating frequency is greater than 10 k Hz. Previously presented
The magnetic sensor system of claim 1, wherein the control circuit is coupled to provide the alternating square wave voltage signal to the conductive gate structure, at least partially according to a temperature compensation control input signal for temperature compensating the magnetic field sensitivity of the Hall sensor. Currently amended
The magnetic sensor system of claim 1, wherein the control circuit is coupled to provide the alternating square wave voltage signal to the conductive gate structure, at least partially according to a sensitivity control input signal from an external system for adaptive control of the magnetic field sensitivity of the Hall sensor. Currently amended
. Canceled
. Canceled
. Canceled
. Canceled
. Canceled
. Canceled
A method of sensing a magnetic field, the method comprising: applying at least one of the following to a channel portion of a Hall sensor graphene layer: a bias voltage; and a bias current; applying an alternating square wave voltage signal to a gate contact of the Hall sensor at a modulating frequency to alternately increase a magnetic field sensitivity of the Hall sensor in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; receiving an output signal from a sense contact of the Hall sensor; and demodulating the output signal at the modulating frequency to provide a demodulated output signal representing a sensed magnetic field. Currently amended
The method of claim 14, wherein the modulating frequency is greater than 10 kHz. Original
. Canceled
A graphene device for sensing a magnetic field, the graphene device comprising: a graphene layer formed on a substrate; a dielectric structure formed over a channel portion of the graphene layer; a conductive gate structure formed over at least a portion of the dielectric structure above the channel portion of the graphene layer for applying a gate voltage to control a carrier concentration of the channel portion of the graphene layer; first and second conductive source/drain contact structures coupled with corresponding first and second source/drain portions of the graphene layer for applying at least one of the following to the channel portion of the graphene layer: a bias voltage; and a bias current; first and second conductive sense contact structures coupled with corresponding first and second sense portions of the graphene layer for sensing a Hall voltage of the channel portion of the graphene layer, in which: the dielectric structure is positioned between the first conductive sense contact structure and the first sense portion of the graphene layer to form a first capacitive contact for capacitively coupling between them through the dielectric structure; and the dielectric structure is positioned between the second conductive sense contact structure and the second sense portion of the graphene layer to form a second capacitive contact for capacitively coupling between them through the dielectric structure; a sensor interface circuit for providing at least one of an excitation current and voltage to the graphene layer via the first and second conductive source/drain contact structures, and for receiving an output signal from at least one of the first and second conductive sense contact structures representing the magnetic field; and a control circuit that includes an AC modulator to apply an alternating square wave voltage signal to the conductive gate structure at a modulating frequency to alternately increase a magnetic field sensitivity of the graphene device in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; the sensor interface circuit including a demodulator to demodulate the output signal at the modulating frequency to provide a demodulated output signal representing the magnetic field. Currently amended
The graphene device of claim 17, wherein the modulating frequency is greater than 10 k Hz. Previously presented
. Canceled
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene Hall sensor (magnetic sensor system)
graphene Hall sensor with capacitive sense contacts
Materials described outside the worked examples.
graphene
dielectric structure
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | ≥ 10 k | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,069,065Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in this example, the excitation contact structures 1 06a and 106b are formed of copper or other suitable conductive material to provide ohmic contacts …
FIGS. 2 and 3) increases in either the positive or negative direction. According l y, the sensitivity is adjustable through a wide range for VG adjustments …
FIGS. 3, 9, 11, 13 and 15). At 1906, a conductive gate contract structure and one or more sensor excitation contacts are formed over the dielectric, providing …
FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
FIG. 5 shows that the current sensitivity (V/AT) increases from zero along a relatively steep linear region in opposite polarity directions, as the gate …
FIG. 6. [0050] With respect to voltage sensitivity (V/VT) in the graph 700 of
FIG. 7, the curve 702 illustrates-a relatively steep gate voltage sensitivity adjustment range in one example of approximately +/- 5 V, and the curve 802 in
FIG. 8 shows a corresponding sharp reduction in the minimum detectable field as the gate voltage VG is adjusted away from zero. As a result, the adaptive gave …
FIGS. 9-11 illustrate another gate-controlled graphene Hall sensor 100 with one or more capacitive coupling structures 200. In this example, the excitation …
FIG. 10 is a top plan view of the second graphene Hall sensor of
FIG. 11 advantageously facilitates AC coupling of the Hall sensor output signal to the excitation and sensing circuitry 412 for further processing and …
FIG. 12 is a schematic diagram of a gate controlled graphene Hall sensor and a sensitivity control and gate modulation circuit with a modulator for modulating …
FIG. 13. In this manner, capacitive contacts are provided for the excitation connections to the Hall sensor 100, which provide low impedance coupling along …
FIG. 14 is a top plan view of the third graphene Hall sensor of
FIG. 15 is a sectional end elevation view of the third graphene Hall sensor taken along line 15-15 of
FIG. 16 shows a temperature compensated applied gate voltage curve 1602 (VG) provided from the local adaptive sensitivity control circuit 413 in the sensor …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 18. At 1808, the IC 410 selectively adjusts the Hall sensor gate voltage signal amplitude, at least partially according to the received control input …
FIG. 19. The device 2100 includes a graphene layer 2104 formed over a substrate 2102, as in the graphene Hall sensor devices 100. The graphene transistor …
FIG. 20, the common drain amplifier circuit 2000 receives an input voltage VI, which is provided through a filter circuit formed by resistors R 5 and R₆ and an …
FIG. 21). The circuit 2000 uses the capacitively coupled contacts and the associated capacitances C 1 and C₂ for coupling with the source/drain regions 2104S …
FIG. 22 is a schematic diagram illustrating a magnetic sensor with integral capacitive coupling of a graphene Hall sensor sense contact with an instrumentation …
FIG. 23.
FIG. 24 illustrates a frequency response curve 2402 corresponding to the system 2200 of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A magnetic sensor system, comprising: a graphene Hall sensor for sensing a magnetic field, including: a graphene layer formed on a substrate; a dielectric structure formed over a channel portion of the graphene layer; a conductive gate structure formed over at least a portion of the dielectric structure above the channel portion of the graphene layer for applying a gate voltage to control a carrier concentration of the channel portion of the graphene layer; first and second conductive excitation contact structures coupled with corresponding first and second excitation portions of the graphene layer for applying at least one of the following to the channel portion of the graphene layer: a bias voltage; and a bias current; and first and second conductive sense contact structures coupled with corresponding first and second sense portions of the graphene layer for sensing a Hall voltage of the channel portion of the graphene layer; a sensor interface circuit for providing at least one of an excitation current and voltage to the graphene layer via the first and second conductive excitation contact structures, and for receiving an output signal from at least one of the first and second conductive sense contact structures representing the magnetic field; and a control circuit that includes an AC modulator to apply an alternating square wave voltage signal to the conductive gate structure at a modulating frequency to alternately increase a magnetic field sensitivity of the Hall sensor in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; the sensor interface circuit including a demodulator to demodulate the output signal at the modulating frequency to provide a demodulated output signal representing the magnetic field. Currently amended
The magnetic sensor system of claim 1, wherein at least one of the conductive excitation and sense contact structures is capacitively coupled with its corresponding portion of the graphene layer. Original
The magnetic sensor system of claim 1, wherein the modulating frequency is greater than 10 k Hz. Previously presented
The magnetic sensor system of claim 1, wherein the control circuit is coupled to provide the alternating square wave voltage signal to the conductive gate structure, at least partially according to a temperature compensation control input signal for temperature compensating the magnetic field sensitivity of the Hall sensor. Currently amended
The magnetic sensor system of claim 1, wherein the control circuit is coupled to provide the alternating square wave voltage signal to the conductive gate structure, at least partially according to a sensitivity control input signal from an external system for adaptive control of the magnetic field sensitivity of the Hall sensor. Currently amended
. Canceled
. Canceled
. Canceled
. Canceled
. Canceled
. Canceled
A method of sensing a magnetic field, the method comprising: applying at least one of the following to a channel portion of a Hall sensor graphene layer: a bias voltage; and a bias current; applying an alternating square wave voltage signal to a gate contact of the Hall sensor at a modulating frequency to alternately increase a magnetic field sensitivity of the Hall sensor in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; receiving an output signal from a sense contact of the Hall sensor; and demodulating the output signal at the modulating frequency to provide a demodulated output signal representing a sensed magnetic field. Currently amended
The method of claim 14, wherein the modulating frequency is greater than 10 kHz. Original
. Canceled
A graphene device for sensing a magnetic field, the graphene device comprising: a graphene layer formed on a substrate; a dielectric structure formed over a channel portion of the graphene layer; a conductive gate structure formed over at least a portion of the dielectric structure above the channel portion of the graphene layer for applying a gate voltage to control a carrier concentration of the channel portion of the graphene layer; first and second conductive source/drain contact structures coupled with corresponding first and second source/drain portions of the graphene layer for applying at least one of the following to the channel portion of the graphene layer: a bias voltage; and a bias current; first and second conductive sense contact structures coupled with corresponding first and second sense portions of the graphene layer for sensing a Hall voltage of the channel portion of the graphene layer, in which: the dielectric structure is positioned between the first conductive sense contact structure and the first sense portion of the graphene layer to form a first capacitive contact for capacitively coupling between them through the dielectric structure; and the dielectric structure is positioned between the second conductive sense contact structure and the second sense portion of the graphene layer to form a second capacitive contact for capacitively coupling between them through the dielectric structure; a sensor interface circuit for providing at least one of an excitation current and voltage to the graphene layer via the first and second conductive source/drain contact structures, and for receiving an output signal from at least one of the first and second conductive sense contact structures representing the magnetic field; and a control circuit that includes an AC modulator to apply an alternating square wave voltage signal to the conductive gate structure at a modulating frequency to alternately increase a magnetic field sensitivity of the graphene device in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; the sensor interface circuit including a demodulator to demodulate the output signal at the modulating frequency to provide a demodulated output signal representing the magnetic field. Currently amended
The graphene device of claim 17, wherein the modulating frequency is greater than 10 k Hz. Previously presented
. Canceled
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene Hall sensor (magnetic sensor system)
graphene Hall sensor with capacitive sense contacts
Materials described outside the worked examples.
graphene
dielectric structure
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | ≥ 10 k | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,069,065Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in this example, the excitation contact structures 1 06a and 106b are formed of copper or other suitable conductive material to provide ohmic contacts …
FIGS. 2 and 3) increases in either the positive or negative direction. According l y, the sensitivity is adjustable through a wide range for VG adjustments …
FIGS. 3, 9, 11, 13 and 15). At 1906, a conductive gate contract structure and one or more sensor excitation contacts are formed over the dielectric, providing …
FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
FIG. 5 shows that the current sensitivity (V/AT) increases from zero along a relatively steep linear region in opposite polarity directions, as the gate …
FIG. 6. [0050] With respect to voltage sensitivity (V/VT) in the graph 700 of
FIG. 7, the curve 702 illustrates-a relatively steep gate voltage sensitivity adjustment range in one example of approximately +/- 5 V, and the curve 802 in
FIG. 8 shows a corresponding sharp reduction in the minimum detectable field as the gate voltage VG is adjusted away from zero. As a result, the adaptive gave …
FIGS. 9-11 illustrate another gate-controlled graphene Hall sensor 100 with one or more capacitive coupling structures 200. In this example, the excitation …
FIG. 10 is a top plan view of the second graphene Hall sensor of
FIG. 11 advantageously facilitates AC coupling of the Hall sensor output signal to the excitation and sensing circuitry 412 for further processing and …
FIG. 12 is a schematic diagram of a gate controlled graphene Hall sensor and a sensitivity control and gate modulation circuit with a modulator for modulating …
FIG. 13. In this manner, capacitive contacts are provided for the excitation connections to the Hall sensor 100, which provide low impedance coupling along …
FIG. 14 is a top plan view of the third graphene Hall sensor of
FIG. 15 is a sectional end elevation view of the third graphene Hall sensor taken along line 15-15 of
FIG. 16 shows a temperature compensated applied gate voltage curve 1602 (VG) provided from the local adaptive sensitivity control circuit 413 in the sensor …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 18. At 1808, the IC 410 selectively adjusts the Hall sensor gate voltage signal amplitude, at least partially according to the received control input …
FIG. 19. The device 2100 includes a graphene layer 2104 formed over a substrate 2102, as in the graphene Hall sensor devices 100. The graphene transistor …
FIG. 20, the common drain amplifier circuit 2000 receives an input voltage VI, which is provided through a filter circuit formed by resistors R 5 and R₆ and an …
FIG. 21). The circuit 2000 uses the capacitively coupled contacts and the associated capacitances C 1 and C₂ for coupling with the source/drain regions 2104S …
FIG. 22 is a schematic diagram illustrating a magnetic sensor with integral capacitive coupling of a graphene Hall sensor sense contact with an instrumentation …
FIG. 23.
FIG. 24 illustrates a frequency response curve 2402 corresponding to the system 2200 of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A magnetic sensor system, comprising: a graphene Hall sensor for sensing a magnetic field, including: a graphene layer formed on a substrate; a dielectric structure formed over a channel portion of the graphene layer; a conductive gate structure formed over at least a portion of the dielectric structure above the channel portion of the graphene layer for applying a gate voltage to control a carrier concentration of the channel portion of the graphene layer; first and second conductive excitation contact structures coupled with corresponding first and second excitation portions of the graphene layer for applying at least one of the following to the channel portion of the graphene layer: a bias voltage; and a bias current; and first and second conductive sense contact structures coupled with corresponding first and second sense portions of the graphene layer for sensing a Hall voltage of the channel portion of the graphene layer; a sensor interface circuit for providing at least one of an excitation current and voltage to the graphene layer via the first and second conductive excitation contact structures, and for receiving an output signal from at least one of the first and second conductive sense contact structures representing the magnetic field; and a control circuit that includes an AC modulator to apply an alternating square wave voltage signal to the conductive gate structure at a modulating frequency to alternately increase a magnetic field sensitivity of the Hall sensor in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; the sensor interface circuit including a demodulator to demodulate the output signal at the modulating frequency to provide a demodulated output signal representing the magnetic field. Currently amended
The magnetic sensor system of claim 1, wherein at least one of the conductive excitation and sense contact structures is capacitively coupled with its corresponding portion of the graphene layer. Original
The magnetic sensor system of claim 1, wherein the modulating frequency is greater than 10 k Hz. Previously presented
The magnetic sensor system of claim 1, wherein the control circuit is coupled to provide the alternating square wave voltage signal to the conductive gate structure, at least partially according to a temperature compensation control input signal for temperature compensating the magnetic field sensitivity of the Hall sensor. Currently amended
The magnetic sensor system of claim 1, wherein the control circuit is coupled to provide the alternating square wave voltage signal to the conductive gate structure, at least partially according to a sensitivity control input signal from an external system for adaptive control of the magnetic field sensitivity of the Hall sensor. Currently amended
. Canceled
. Canceled
. Canceled
. Canceled
. Canceled
. Canceled
A method of sensing a magnetic field, the method comprising: applying at least one of the following to a channel portion of a Hall sensor graphene layer: a bias voltage; and a bias current; applying an alternating square wave voltage signal to a gate contact of the Hall sensor at a modulating frequency to alternately increase a magnetic field sensitivity of the Hall sensor in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; receiving an output signal from a sense contact of the Hall sensor; and demodulating the output signal at the modulating frequency to provide a demodulated output signal representing a sensed magnetic field. Currently amended
The method of claim 14, wherein the modulating frequency is greater than 10 kHz. Original
. Canceled
A graphene device for sensing a magnetic field, the graphene device comprising: a graphene layer formed on a substrate; a dielectric structure formed over a channel portion of the graphene layer; a conductive gate structure formed over at least a portion of the dielectric structure above the channel portion of the graphene layer for applying a gate voltage to control a carrier concentration of the channel portion of the graphene layer; first and second conductive source/drain contact structures coupled with corresponding first and second source/drain portions of the graphene layer for applying at least one of the following to the channel portion of the graphene layer: a bias voltage; and a bias current; first and second conductive sense contact structures coupled with corresponding first and second sense portions of the graphene layer for sensing a Hall voltage of the channel portion of the graphene layer, in which: the dielectric structure is positioned between the first conductive sense contact structure and the first sense portion of the graphene layer to form a first capacitive contact for capacitively coupling between them through the dielectric structure; and the dielectric structure is positioned between the second conductive sense contact structure and the second sense portion of the graphene layer to form a second capacitive contact for capacitively coupling between them through the dielectric structure; a sensor interface circuit for providing at least one of an excitation current and voltage to the graphene layer via the first and second conductive source/drain contact structures, and for receiving an output signal from at least one of the first and second conductive sense contact structures representing the magnetic field; and a control circuit that includes an AC modulator to apply an alternating square wave voltage signal to the conductive gate structure at a modulating frequency to alternately increase a magnetic field sensitivity of the graphene device in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; the sensor interface circuit including a demodulator to demodulate the output signal at the modulating frequency to provide a demodulated output signal representing the magnetic field. Currently amended
The graphene device of claim 17, wherein the modulating frequency is greater than 10 k Hz. Previously presented
. Canceled
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene Hall sensor (magnetic sensor system)
graphene Hall sensor with capacitive sense contacts
Materials described outside the worked examples.
graphene
dielectric structure
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | ≥ 10 k | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,069,065Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in this example, the excitation contact structures 1 06a and 106b are formed of copper or other suitable conductive material to provide ohmic contacts …
FIGS. 2 and 3) increases in either the positive or negative direction. According l y, the sensitivity is adjustable through a wide range for VG adjustments …
FIGS. 3, 9, 11, 13 and 15). At 1906, a conductive gate contract structure and one or more sensor excitation contacts are formed over the dielectric, providing …
FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
FIG. 5 shows that the current sensitivity (V/AT) increases from zero along a relatively steep linear region in opposite polarity directions, as the gate …
FIG. 6. [0050] With respect to voltage sensitivity (V/VT) in the graph 700 of
FIG. 7, the curve 702 illustrates-a relatively steep gate voltage sensitivity adjustment range in one example of approximately +/- 5 V, and the curve 802 in
FIG. 8 shows a corresponding sharp reduction in the minimum detectable field as the gate voltage VG is adjusted away from zero. As a result, the adaptive gave …
FIGS. 9-11 illustrate another gate-controlled graphene Hall sensor 100 with one or more capacitive coupling structures 200. In this example, the excitation …
FIG. 10 is a top plan view of the second graphene Hall sensor of
FIG. 11 advantageously facilitates AC coupling of the Hall sensor output signal to the excitation and sensing circuitry 412 for further processing and …
FIG. 12 is a schematic diagram of a gate controlled graphene Hall sensor and a sensitivity control and gate modulation circuit with a modulator for modulating …
FIG. 13. In this manner, capacitive contacts are provided for the excitation connections to the Hall sensor 100, which provide low impedance coupling along …
FIG. 14 is a top plan view of the third graphene Hall sensor of
FIG. 15 is a sectional end elevation view of the third graphene Hall sensor taken along line 15-15 of
FIG. 16 shows a temperature compensated applied gate voltage curve 1602 (VG) provided from the local adaptive sensitivity control circuit 413 in the sensor …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 18. At 1808, the IC 410 selectively adjusts the Hall sensor gate voltage signal amplitude, at least partially according to the received control input …
FIG. 19. The device 2100 includes a graphene layer 2104 formed over a substrate 2102, as in the graphene Hall sensor devices 100. The graphene transistor …
FIG. 20, the common drain amplifier circuit 2000 receives an input voltage VI, which is provided through a filter circuit formed by resistors R 5 and R₆ and an …
FIG. 21). The circuit 2000 uses the capacitively coupled contacts and the associated capacitances C 1 and C₂ for coupling with the source/drain regions 2104S …
FIG. 22 is a schematic diagram illustrating a magnetic sensor with integral capacitive coupling of a graphene Hall sensor sense contact with an instrumentation …
FIG. 23.
FIG. 24 illustrates a frequency response curve 2402 corresponding to the system 2200 of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A magnetic sensor system, comprising: a graphene Hall sensor for sensing a magnetic field, including: a graphene layer formed on a substrate; a dielectric structure formed over a channel portion of the graphene layer; a conductive gate structure formed over at least a portion of the dielectric structure above the channel portion of the graphene layer for applying a gate voltage to control a carrier concentration of the channel portion of the graphene layer; first and second conductive excitation contact structures coupled with corresponding first and second excitation portions of the graphene layer for applying at least one of the following to the channel portion of the graphene layer: a bias voltage; and a bias current; and first and second conductive sense contact structures coupled with corresponding first and second sense portions of the graphene layer for sensing a Hall voltage of the channel portion of the graphene layer; a sensor interface circuit for providing at least one of an excitation current and voltage to the graphene layer via the first and second conductive excitation contact structures, and for receiving an output signal from at least one of the first and second conductive sense contact structures representing the magnetic field; and a control circuit that includes an AC modulator to apply an alternating square wave voltage signal to the conductive gate structure at a modulating frequency to alternately increase a magnetic field sensitivity of the Hall sensor in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; the sensor interface circuit including a demodulator to demodulate the output signal at the modulating frequency to provide a demodulated output signal representing the magnetic field. Currently amended
The magnetic sensor system of claim 1, wherein at least one of the conductive excitation and sense contact structures is capacitively coupled with its corresponding portion of the graphene layer. Original
The magnetic sensor system of claim 1, wherein the modulating frequency is greater than 10 k Hz. Previously presented
The magnetic sensor system of claim 1, wherein the control circuit is coupled to provide the alternating square wave voltage signal to the conductive gate structure, at least partially according to a temperature compensation control input signal for temperature compensating the magnetic field sensitivity of the Hall sensor. Currently amended
The magnetic sensor system of claim 1, wherein the control circuit is coupled to provide the alternating square wave voltage signal to the conductive gate structure, at least partially according to a sensitivity control input signal from an external system for adaptive control of the magnetic field sensitivity of the Hall sensor. Currently amended
. Canceled
. Canceled
. Canceled
. Canceled
. Canceled
. Canceled
A method of sensing a magnetic field, the method comprising: applying at least one of the following to a channel portion of a Hall sensor graphene layer: a bias voltage; and a bias current; applying an alternating square wave voltage signal to a gate contact of the Hall sensor at a modulating frequency to alternately increase a magnetic field sensitivity of the Hall sensor in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; receiving an output signal from a sense contact of the Hall sensor; and demodulating the output signal at the modulating frequency to provide a demodulated output signal representing a sensed magnetic field. Currently amended
The method of claim 14, wherein the modulating frequency is greater than 10 kHz. Original
. Canceled
A graphene device for sensing a magnetic field, the graphene device comprising: a graphene layer formed on a substrate; a dielectric structure formed over a channel portion of the graphene layer; a conductive gate structure formed over at least a portion of the dielectric structure above the channel portion of the graphene layer for applying a gate voltage to control a carrier concentration of the channel portion of the graphene layer; first and second conductive source/drain contact structures coupled with corresponding first and second source/drain portions of the graphene layer for applying at least one of the following to the channel portion of the graphene layer: a bias voltage; and a bias current; first and second conductive sense contact structures coupled with corresponding first and second sense portions of the graphene layer for sensing a Hall voltage of the channel portion of the graphene layer, in which: the dielectric structure is positioned between the first conductive sense contact structure and the first sense portion of the graphene layer to form a first capacitive contact for capacitively coupling between them through the dielectric structure; and the dielectric structure is positioned between the second conductive sense contact structure and the second sense portion of the graphene layer to form a second capacitive contact for capacitively coupling between them through the dielectric structure; a sensor interface circuit for providing at least one of an excitation current and voltage to the graphene layer via the first and second conductive source/drain contact structures, and for receiving an output signal from at least one of the first and second conductive sense contact structures representing the magnetic field; and a control circuit that includes an AC modulator to apply an alternating square wave voltage signal to the conductive gate structure at a modulating frequency to alternately increase a magnetic field sensitivity of the graphene device in opposite polarity directions as the alternating square wave voltage signal alternately increases in opposite polarity directions; the sensor interface circuit including a demodulator to demodulate the output signal at the modulating frequency to provide a demodulated output signal representing the magnetic field. Currently amended
The graphene device of claim 17, wherein the modulating frequency is greater than 10 k Hz. Previously presented
. Canceled
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene Hall sensor (magnetic sensor system)
graphene Hall sensor with capacitive sense contacts
Materials described outside the worked examples.
graphene
dielectric structure
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | ≥ 10 k | — |
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graphene Hall sensor (embodiment, FIGS. 1-3)
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FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
FIG. 5 shows that the current sensitivity (V/AT) increases from zero along a relatively steep linear region in opposite polarity directions, as the gate …
FIG. 7, the curve 702 illustrates-a relatively steep gate voltage sensitivity adjustment range in one example of approximately +/- 5 V, and the curve 802 in
FIG. 8 shows a corresponding sharp reduction in the minimum detectable field as the gate voltage VG is adjusted away from zero. As a result, the adaptive gave …
FIGS. 9-11 illustrate another gate-controlled graphene Hall sensor 100 with one or more capacitive coupling structures 200. In this example, the excitation …
FIG. 12 is a schematic diagram of a gate controlled graphene Hall sensor and a sensitivity control and gate modulation circuit with a modulator for modulating …
FIG. 16 shows a temperature compensated applied gate voltage curve 1602 (VG) provided from the local adaptive sensitivity control circuit 413 in the sensor …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 18. At 1808, the IC 410 selectively adjusts the Hall sensor gate voltage signal amplitude, at least partially according to the received control input …
FIG. 19. The device 2100 includes a graphene layer 2104 formed over a substrate 2102, as in the graphene Hall sensor devices 100. The graphene transistor …
FIG. 20, the common drain amplifier circuit 2000 receives an input voltage VI, which is provided through a filter circuit formed by resistors R 5 and R₆ and an …
FIG. 21). The circuit 2000 uses the capacitively coupled contacts and the associated capacitances C 1 and C₂ for coupling with the source/drain regions 2104S …
FIG. 24 illustrates a frequency response curve 2402 corresponding to the system 2200 of
graphene Hall sensor (embodiment, FIGS. 1-3)
copper
FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
FIG. 5 shows that the current sensitivity (V/AT) increases from zero along a relatively steep linear region in opposite polarity directions, as the gate …
FIG. 7, the curve 702 illustrates-a relatively steep gate voltage sensitivity adjustment range in one example of approximately +/- 5 V, and the curve 802 in
FIG. 8 shows a corresponding sharp reduction in the minimum detectable field as the gate voltage VG is adjusted away from zero. As a result, the adaptive gave …
FIGS. 9-11 illustrate another gate-controlled graphene Hall sensor 100 with one or more capacitive coupling structures 200. In this example, the excitation …
FIG. 12 is a schematic diagram of a gate controlled graphene Hall sensor and a sensitivity control and gate modulation circuit with a modulator for modulating …
FIG. 16 shows a temperature compensated applied gate voltage curve 1602 (VG) provided from the local adaptive sensitivity control circuit 413 in the sensor …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 18. At 1808, the IC 410 selectively adjusts the Hall sensor gate voltage signal amplitude, at least partially according to the received control input …
FIG. 19. The device 2100 includes a graphene layer 2104 formed over a substrate 2102, as in the graphene Hall sensor devices 100. The graphene transistor …
FIG. 20, the common drain amplifier circuit 2000 receives an input voltage VI, which is provided through a filter circuit formed by resistors R 5 and R₆ and an …
FIG. 21). The circuit 2000 uses the capacitively coupled contacts and the associated capacitances C 1 and C₂ for coupling with the source/drain regions 2104S …
FIG. 24 illustrates a frequency response curve 2402 corresponding to the system 2200 of
graphene Hall sensor (embodiment, FIGS. 1-3)
copper
FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
FIG. 5 shows that the current sensitivity (V/AT) increases from zero along a relatively steep linear region in opposite polarity directions, as the gate …
FIG. 7, the curve 702 illustrates-a relatively steep gate voltage sensitivity adjustment range in one example of approximately +/- 5 V, and the curve 802 in
FIG. 8 shows a corresponding sharp reduction in the minimum detectable field as the gate voltage VG is adjusted away from zero. As a result, the adaptive gave …
FIGS. 9-11 illustrate another gate-controlled graphene Hall sensor 100 with one or more capacitive coupling structures 200. In this example, the excitation …
FIG. 12 is a schematic diagram of a gate controlled graphene Hall sensor and a sensitivity control and gate modulation circuit with a modulator for modulating …
FIG. 16 shows a temperature compensated applied gate voltage curve 1602 (VG) provided from the local adaptive sensitivity control circuit 413 in the sensor …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 18. At 1808, the IC 410 selectively adjusts the Hall sensor gate voltage signal amplitude, at least partially according to the received control input …
FIG. 19. The device 2100 includes a graphene layer 2104 formed over a substrate 2102, as in the graphene Hall sensor devices 100. The graphene transistor …
FIG. 20, the common drain amplifier circuit 2000 receives an input voltage VI, which is provided through a filter circuit formed by resistors R 5 and R₆ and an …
FIG. 21). The circuit 2000 uses the capacitively coupled contacts and the associated capacitances C 1 and C₂ for coupling with the source/drain regions 2104S …
FIG. 24 illustrates a frequency response curve 2402 corresponding to the system 2200 of
graphene Hall sensor (embodiment, FIGS. 1-3)
copper
FIG. 4, the on-chip adaptive sensitivity control circuit 413 includes an adjustable DC voltage source 402 with an output coupled to provide a controlled gate …
FIG. 5 shows that the current sensitivity (V/AT) increases from zero along a relatively steep linear region in opposite polarity directions, as the gate …
FIG. 7, the curve 702 illustrates-a relatively steep gate voltage sensitivity adjustment range in one example of approximately +/- 5 V, and the curve 802 in
FIG. 8 shows a corresponding sharp reduction in the minimum detectable field as the gate voltage VG is adjusted away from zero. As a result, the adaptive gave …
FIGS. 9-11 illustrate another gate-controlled graphene Hall sensor 100 with one or more capacitive coupling structures 200. In this example, the excitation …
FIG. 12 is a schematic diagram of a gate controlled graphene Hall sensor and a sensitivity control and gate modulation circuit with a modulator for modulating …
FIG. 16 shows a temperature compensated applied gate voltage curve 1602 (VG) provided from the local adaptive sensitivity control circuit 413 in the sensor …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 17 illustrates a gate voltage curve 1702 in a graph 1700, as well as a temperature curve 1712 in a graph 1710 as a function of time. In this example, the …
FIG. 18. At 1808, the IC 410 selectively adjusts the Hall sensor gate voltage signal amplitude, at least partially according to the received control input …
FIG. 19. The device 2100 includes a graphene layer 2104 formed over a substrate 2102, as in the graphene Hall sensor devices 100. The graphene transistor …
FIG. 20, the common drain amplifier circuit 2000 receives an input voltage VI, which is provided through a filter circuit formed by resistors R 5 and R₆ and an …
FIG. 21). The circuit 2000 uses the capacitively coupled contacts and the associated capacitances C 1 and C₂ for coupling with the source/drain regions 2104S …
FIG. 24 illustrates a frequency response curve 2402 corresponding to the system 2200 of