Patent
US 11,404,268METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
Yutaka MIKAWA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,404,268Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A C-plane GaN substrate, comprising: a plurality of dislocation arrays periodically and two-dimensionally arranged at least on one main surface of the substrate, wherein no group of dislocations inherited from a GaN crystal from which the substrate is formed is periodically present on the one main surface. Currently amended
The C-plane GaN substrate according to claim 1, wherein the arrangement of the plurality of dislocation arrays on the main surface has periodicity in two or more directions. Original
The C-plane GaN substrate according to claim 1, wherein concentrations of Li, Na, K, Mg, and Ca are each less than 1x 10 16 atoms/cm 3. Original
The C-plane GaN substrate according to claim 1, wherein the substrate contains F. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an H concentration of not less than 5 x10 17 atoms/cm 3 and not more than 1x 10 20 atoms/cm 3. Original
The C-plane GaN substrate according to claim 1, wherein the substrate comprises a GaN crystal having an infrared absorption peak attributable to a gallium vacancy-hydrogen complex within a range of 3140 to 3200 cm⁻¹. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a resistivity of 2 x 10- 2 Q cm or less at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an n-type carrier concentration of 1x 10 18 cm- 3 or more at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an O concentration higher than an n-type carrier concentration at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a size of 45 mm or more in all of a [1-100] direction, a [10-10] direction, and a [01-10] direction. Original
The C-plane GaN substrate according to claim 1, wherein the substrate is disk-shaped and has a diameter of 45 mm or more. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a gallium polar surface having an orientation of within 5 0 from [0001]. Original
A method for producing a nitride semiconductor device, the method comprising: preparing the C-plane GaN substrate according to claim 1; and epitaxially growing one or more nitride semiconductors on the prepared C-plane GaN substrate. Currently amended
A method for producing an epitaxial substrate, the method comprising: preparing the C-plane GaN substrate according to claim 1; and epitaxially growing one or more nitride semiconductors on the prepared C-plane GaN substrate. Currently amended
A method for producing a bulk nitride semiconductor crystal, the method comprising: preparing the C-plane G aN substrate according to claim 1; and epitaxially growing one or more nitride semiconductor crystals on the prepared C- plane G aN substrate. Currently amended
A method for producing a G aN layer-bonded substrate, the method comprising: preparing the C-plane G aN substrate according to claim 1; and bonding the prepared C-plane G aN substrate to a heterogeneous substrate. Currently amended
A C-plane G aN substrate, comprising: a plurality of dislocation arrays that are derived from coalescence occurred during growth of a G aN crystal forming the substrate and are periodically and two-dimensionally arranged at least on one main surface of the substrate, wherein no group of dislocations other than the plurality of dislocation arrays is periodically present on the one main surface. New
Layer stacks claimed or described, ordered top of device to substrate.
C-plane GaN substrate
Materials described outside the worked examples.
C-plane GaN substrate
GaN
nitride semiconductor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
infrared absorption peak attributable to gallium vacancy-hydrogen complex | 3140–3200 | GaN |
resistivity at room temperature | ≤ 0.02 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,404,268Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A C-plane GaN substrate, comprising: a plurality of dislocation arrays periodically and two-dimensionally arranged at least on one main surface of the substrate, wherein no group of dislocations inherited from a GaN crystal from which the substrate is formed is periodically present on the one main surface. Currently amended
The C-plane GaN substrate according to claim 1, wherein the arrangement of the plurality of dislocation arrays on the main surface has periodicity in two or more directions. Original
The C-plane GaN substrate according to claim 1, wherein concentrations of Li, Na, K, Mg, and Ca are each less than 1x 10 16 atoms/cm 3. Original
The C-plane GaN substrate according to claim 1, wherein the substrate contains F. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an H concentration of not less than 5 x10 17 atoms/cm 3 and not more than 1x 10 20 atoms/cm 3. Original
The C-plane GaN substrate according to claim 1, wherein the substrate comprises a GaN crystal having an infrared absorption peak attributable to a gallium vacancy-hydrogen complex within a range of 3140 to 3200 cm⁻¹. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a resistivity of 2 x 10- 2 Q cm or less at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an n-type carrier concentration of 1x 10 18 cm- 3 or more at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an O concentration higher than an n-type carrier concentration at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a size of 45 mm or more in all of a [1-100] direction, a [10-10] direction, and a [01-10] direction. Original
The C-plane GaN substrate according to claim 1, wherein the substrate is disk-shaped and has a diameter of 45 mm or more. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a gallium polar surface having an orientation of within 5 0 from [0001]. Original
A method for producing a nitride semiconductor device, the method comprising: preparing the C-plane GaN substrate according to claim 1; and epitaxially growing one or more nitride semiconductors on the prepared C-plane GaN substrate. Currently amended
A method for producing an epitaxial substrate, the method comprising: preparing the C-plane GaN substrate according to claim 1; and epitaxially growing one or more nitride semiconductors on the prepared C-plane GaN substrate. Currently amended
A method for producing a bulk nitride semiconductor crystal, the method comprising: preparing the C-plane G aN substrate according to claim 1; and epitaxially growing one or more nitride semiconductor crystals on the prepared C- plane G aN substrate. Currently amended
A method for producing a G aN layer-bonded substrate, the method comprising: preparing the C-plane G aN substrate according to claim 1; and bonding the prepared C-plane G aN substrate to a heterogeneous substrate. Currently amended
A C-plane G aN substrate, comprising: a plurality of dislocation arrays that are derived from coalescence occurred during growth of a G aN crystal forming the substrate and are periodically and two-dimensionally arranged at least on one main surface of the substrate, wherein no group of dislocations other than the plurality of dislocation arrays is periodically present on the one main surface. New
Layer stacks claimed or described, ordered top of device to substrate.
C-plane GaN substrate
Materials described outside the worked examples.
C-plane GaN substrate
GaN
nitride semiconductor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
infrared absorption peak attributable to gallium vacancy-hydrogen complex | 3140–3200 | GaN |
resistivity at room temperature | ≤ 0.02 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,404,268Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A C-plane GaN substrate, comprising: a plurality of dislocation arrays periodically and two-dimensionally arranged at least on one main surface of the substrate, wherein no group of dislocations inherited from a GaN crystal from which the substrate is formed is periodically present on the one main surface. Currently amended
The C-plane GaN substrate according to claim 1, wherein the arrangement of the plurality of dislocation arrays on the main surface has periodicity in two or more directions. Original
The C-plane GaN substrate according to claim 1, wherein concentrations of Li, Na, K, Mg, and Ca are each less than 1x 10 16 atoms/cm 3. Original
The C-plane GaN substrate according to claim 1, wherein the substrate contains F. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an H concentration of not less than 5 x10 17 atoms/cm 3 and not more than 1x 10 20 atoms/cm 3. Original
The C-plane GaN substrate according to claim 1, wherein the substrate comprises a GaN crystal having an infrared absorption peak attributable to a gallium vacancy-hydrogen complex within a range of 3140 to 3200 cm⁻¹. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a resistivity of 2 x 10- 2 Q cm or less at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an n-type carrier concentration of 1x 10 18 cm- 3 or more at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an O concentration higher than an n-type carrier concentration at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a size of 45 mm or more in all of a [1-100] direction, a [10-10] direction, and a [01-10] direction. Original
The C-plane GaN substrate according to claim 1, wherein the substrate is disk-shaped and has a diameter of 45 mm or more. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a gallium polar surface having an orientation of within 5 0 from [0001]. Original
A method for producing a nitride semiconductor device, the method comprising: preparing the C-plane GaN substrate according to claim 1; and epitaxially growing one or more nitride semiconductors on the prepared C-plane GaN substrate. Currently amended
A method for producing an epitaxial substrate, the method comprising: preparing the C-plane GaN substrate according to claim 1; and epitaxially growing one or more nitride semiconductors on the prepared C-plane GaN substrate. Currently amended
A method for producing a bulk nitride semiconductor crystal, the method comprising: preparing the C-plane G aN substrate according to claim 1; and epitaxially growing one or more nitride semiconductor crystals on the prepared C- plane G aN substrate. Currently amended
A method for producing a G aN layer-bonded substrate, the method comprising: preparing the C-plane G aN substrate according to claim 1; and bonding the prepared C-plane G aN substrate to a heterogeneous substrate. Currently amended
A C-plane G aN substrate, comprising: a plurality of dislocation arrays that are derived from coalescence occurred during growth of a G aN crystal forming the substrate and are periodically and two-dimensionally arranged at least on one main surface of the substrate, wherein no group of dislocations other than the plurality of dislocation arrays is periodically present on the one main surface. New
Layer stacks claimed or described, ordered top of device to substrate.
C-plane GaN substrate
Materials described outside the worked examples.
C-plane GaN substrate
GaN
nitride semiconductor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
infrared absorption peak attributable to gallium vacancy-hydrogen complex | 3140–3200 | GaN |
resistivity at room temperature | ≤ 0.02 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,404,268Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A C-plane GaN substrate, comprising: a plurality of dislocation arrays periodically and two-dimensionally arranged at least on one main surface of the substrate, wherein no group of dislocations inherited from a GaN crystal from which the substrate is formed is periodically present on the one main surface. Currently amended
The C-plane GaN substrate according to claim 1, wherein the arrangement of the plurality of dislocation arrays on the main surface has periodicity in two or more directions. Original
The C-plane GaN substrate according to claim 1, wherein concentrations of Li, Na, K, Mg, and Ca are each less than 1x 10 16 atoms/cm 3. Original
The C-plane GaN substrate according to claim 1, wherein the substrate contains F. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an H concentration of not less than 5 x10 17 atoms/cm 3 and not more than 1x 10 20 atoms/cm 3. Original
The C-plane GaN substrate according to claim 1, wherein the substrate comprises a GaN crystal having an infrared absorption peak attributable to a gallium vacancy-hydrogen complex within a range of 3140 to 3200 cm⁻¹. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a resistivity of 2 x 10- 2 Q cm or less at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an n-type carrier concentration of 1x 10 18 cm- 3 or more at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has an O concentration higher than an n-type carrier concentration at room temperature. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a size of 45 mm or more in all of a [1-100] direction, a [10-10] direction, and a [01-10] direction. Original
The C-plane GaN substrate according to claim 1, wherein the substrate is disk-shaped and has a diameter of 45 mm or more. Original
The C-plane GaN substrate according to claim 1, wherein the substrate has a gallium polar surface having an orientation of within 5 0 from [0001]. Original
A method for producing a nitride semiconductor device, the method comprising: preparing the C-plane GaN substrate according to claim 1; and epitaxially growing one or more nitride semiconductors on the prepared C-plane GaN substrate. Currently amended
A method for producing an epitaxial substrate, the method comprising: preparing the C-plane GaN substrate according to claim 1; and epitaxially growing one or more nitride semiconductors on the prepared C-plane GaN substrate. Currently amended
A method for producing a bulk nitride semiconductor crystal, the method comprising: preparing the C-plane G aN substrate according to claim 1; and epitaxially growing one or more nitride semiconductor crystals on the prepared C- plane G aN substrate. Currently amended
A method for producing a G aN layer-bonded substrate, the method comprising: preparing the C-plane G aN substrate according to claim 1; and bonding the prepared C-plane G aN substrate to a heterogeneous substrate. Currently amended
A C-plane G aN substrate, comprising: a plurality of dislocation arrays that are derived from coalescence occurred during growth of a G aN crystal forming the substrate and are periodically and two-dimensionally arranged at least on one main surface of the substrate, wherein no group of dislocations other than the plurality of dislocation arrays is periodically present on the one main surface. New
Layer stacks claimed or described, ordered top of device to substrate.
C-plane GaN substrate
Materials described outside the worked examples.
C-plane GaN substrate
GaN
nitride semiconductor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
infrared absorption peak attributable to gallium vacancy-hydrogen complex | 3140–3200 | GaN |
resistivity at room temperature | ≤ 0.02 |
Related documents with shared materials, methods, properties, or citations.
NH₄F
NH₄I
n-type carrier concentration at room temperature | ≥ 1000000000000000000 | GaN |
H concentration | 500000000000000000–100000000000000000000 | GaN |
Li concentration upper limit | ≤ 10000000000000000 | GaN |
Na concentration upper limit | ≤ 10000000000000000 | GaN |
K concentration upper limit | ≤ 10000000000000000 | GaN |
Mg concentration upper limit | ≤ 10000000000000000 | GaN |
Ca concentration upper limit | ≤ 10000000000000000 | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Pressure | 100–250 MPa | — |
Temperature | 605–610 °C | — |
Temperature | 5–10 °C | — |
Thickness | 3140–3200 cm | — |
Temperature | 550–650 °C | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 350 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 750 cm | — |
Thickness | ≤ 45 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≤ 4 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≥ 305 mm | — |
Thickness | ≥ 4 mm | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 20 mm | — |
NH₄F
NH₄I
n-type carrier concentration at room temperature | ≥ 1000000000000000000 | GaN |
H concentration | 500000000000000000–100000000000000000000 | GaN |
Li concentration upper limit | ≤ 10000000000000000 | GaN |
Na concentration upper limit | ≤ 10000000000000000 | GaN |
K concentration upper limit | ≤ 10000000000000000 | GaN |
Mg concentration upper limit | ≤ 10000000000000000 | GaN |
Ca concentration upper limit | ≤ 10000000000000000 | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Pressure | 100–250 MPa | — |
Temperature | 605–610 °C | — |
Temperature | 5–10 °C | — |
Thickness | 3140–3200 cm | — |
Temperature | 550–650 °C | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 350 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 750 cm | — |
Thickness | ≤ 45 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≤ 4 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≥ 305 mm | — |
Thickness | ≥ 4 mm | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 20 mm | — |
NH₄F
NH₄I
n-type carrier concentration at room temperature | ≥ 1000000000000000000 | GaN |
H concentration | 500000000000000000–100000000000000000000 | GaN |
Li concentration upper limit | ≤ 10000000000000000 | GaN |
Na concentration upper limit | ≤ 10000000000000000 | GaN |
K concentration upper limit | ≤ 10000000000000000 | GaN |
Mg concentration upper limit | ≤ 10000000000000000 | GaN |
Ca concentration upper limit | ≤ 10000000000000000 | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Pressure | 100–250 MPa | — |
Temperature | 605–610 °C | — |
Temperature | 5–10 °C | — |
Thickness | 3140–3200 cm | — |
Temperature | 550–650 °C | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 350 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 750 cm | — |
Thickness | ≤ 45 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≤ 4 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≥ 305 mm | — |
Thickness | ≥ 4 mm | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 20 mm | — |
NH₄F
NH₄I
n-type carrier concentration at room temperature | ≥ 1000000000000000000 | GaN |
H concentration | 500000000000000000–100000000000000000000 | GaN |
Li concentration upper limit | ≤ 10000000000000000 | GaN |
Na concentration upper limit | ≤ 10000000000000000 | GaN |
K concentration upper limit | ≤ 10000000000000000 | GaN |
Mg concentration upper limit | ≤ 10000000000000000 | GaN |
Ca concentration upper limit | ≤ 10000000000000000 | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Pressure | 100–250 MPa | — |
Temperature | 605–610 °C | — |
Temperature | 5–10 °C | — |
Thickness | 3140–3200 cm | — |
Temperature | 550–650 °C | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 350 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 750 cm | — |
Thickness | ≤ 45 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≤ 4 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≥ 305 mm | — |
Thickness | ≥ 4 mm | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 20 mm | — |