Patent
US 9,093,271METHOD FOR MANUFACTURING A THICK EPITAXIAL LAYER OF GALLIUM NITRIDE ON A SILICON OR SIMILAR SUBSTRATE AND LAYER OBTAINED USING SAID METHOD
David Schenk
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,093,271Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1), an emerging dislocation density of the order or greater than 5. 109 cm⁻² is observed, wherein, for a similar structure wherein the layer of-GaN- GaN …
FIG. 3). Please amend paragraph [00313] as follows: [00313] A first example of a structure with a dual intermediate layer (see
FIG. 4) successively comprises a silicon substrate 1, a 200 nm thick buffer layer 2 of A l N, a 1.3 p m 3D layer 3a of GaN, a 17 nm first intermediate layer 4a …
FIG. 5) successively comprises a silicon substrate 1, a 200 nm thick buffer layer 2 of A l N, a 1.3 p m 3D layer 3a of GaN, a 17 nm first intermediate layer 4a …
FIG. 10, comprises a layer 4b (see
FIG. 11 thus illustrates a Nomarski contrast optical microscopic surface view of a structure which, unlike that in
FIG. 12, the photograph on the left corresponding to the interface between the first intermediate layer 4a and the underlying layer 3a of GaN; the photograph on …
FIG. 13 shows TEM images of the voids in the structure in
FIG. 15 illustrates, in the left portion thereof, a Schottky diode produced in the useful-layer- la y er 3 of GaN formed by means of the invention. Please …
FIG. 19 illustrates an example of an RC-LED with a monolithic Bragg mirror based on (A1,:I (Al, In)N; Please amend paragraph [00119] as follows: [00119]
FIG. 23 illustrates another example of a high electron mobility transistor (HEMT) or a field effect transistor (FET), comprising a "spacer" -layer; layer; and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Serial No. 14/129,638 IN THE CLAIMS: Claims 13-30 were previously canceled. Claims 1, 3-6, 8, and 9 have been amended herein. All of the pending claims are presented below. This listing of claims will replace all prior versions and listings of claims in the application. Please enter these claims as amended.
The method of claim 1, wherein the diameter of the substrate is greater than or equal to 150 mm.
The method of claim 1, wherein step (d) comprises epitaxially growing the useful GaN layerto layer to a thickness of at least 5 pm.
Serial No. 14/129,638
Serial No. 14/129,638
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Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon epitaxial structure
RC-LED with monolithic Bragg mirror based on (Al,In)N
No layer stack recorded.
High electron mobility transistor (HEMT) or field effect transistor (FET) with spacer layer
Materials described outside the worked examples.
GaN
AlN buffer layer
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13 shows TEM images of the voids in the structure in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Coefficient Of Thermal Expansion | 0.00000559 K⁻¹ | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,093,271Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1), an emerging dislocation density of the order or greater than 5. 109 cm⁻² is observed, wherein, for a similar structure wherein the layer of-GaN- GaN …
FIG. 3). Please amend paragraph [00313] as follows: [00313] A first example of a structure with a dual intermediate layer (see
FIG. 4) successively comprises a silicon substrate 1, a 200 nm thick buffer layer 2 of A l N, a 1.3 p m 3D layer 3a of GaN, a 17 nm first intermediate layer 4a …
FIG. 5) successively comprises a silicon substrate 1, a 200 nm thick buffer layer 2 of A l N, a 1.3 p m 3D layer 3a of GaN, a 17 nm first intermediate layer 4a …
FIG. 10, comprises a layer 4b (see
FIG. 11 thus illustrates a Nomarski contrast optical microscopic surface view of a structure which, unlike that in
FIG. 12, the photograph on the left corresponding to the interface between the first intermediate layer 4a and the underlying layer 3a of GaN; the photograph on …
FIG. 13 shows TEM images of the voids in the structure in
FIG. 15 illustrates, in the left portion thereof, a Schottky diode produced in the useful-layer- la y er 3 of GaN formed by means of the invention. Please …
FIG. 19 illustrates an example of an RC-LED with a monolithic Bragg mirror based on (A1,:I (Al, In)N; Please amend paragraph [00119] as follows: [00119]
FIG. 23 illustrates another example of a high electron mobility transistor (HEMT) or a field effect transistor (FET), comprising a "spacer" -layer; layer; and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Serial No. 14/129,638 IN THE CLAIMS: Claims 13-30 were previously canceled. Claims 1, 3-6, 8, and 9 have been amended herein. All of the pending claims are presented below. This listing of claims will replace all prior versions and listings of claims in the application. Please enter these claims as amended.
The method of claim 1, wherein the diameter of the substrate is greater than or equal to 150 mm.
The method of claim 1, wherein step (d) comprises epitaxially growing the useful GaN layerto layer to a thickness of at least 5 pm.
Serial No. 14/129,638
Serial No. 14/129,638
13-30 13 canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon epitaxial structure
RC-LED with monolithic Bragg mirror based on (Al,In)N
No layer stack recorded.
High electron mobility transistor (HEMT) or field effect transistor (FET) with spacer layer
Materials described outside the worked examples.
GaN
AlN buffer layer
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13 shows TEM images of the voids in the structure in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Coefficient Of Thermal Expansion | 0.00000559 K⁻¹ | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,093,271Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1), an emerging dislocation density of the order or greater than 5. 109 cm⁻² is observed, wherein, for a similar structure wherein the layer of-GaN- GaN …
FIG. 3). Please amend paragraph [00313] as follows: [00313] A first example of a structure with a dual intermediate layer (see
FIG. 4) successively comprises a silicon substrate 1, a 200 nm thick buffer layer 2 of A l N, a 1.3 p m 3D layer 3a of GaN, a 17 nm first intermediate layer 4a …
FIG. 5) successively comprises a silicon substrate 1, a 200 nm thick buffer layer 2 of A l N, a 1.3 p m 3D layer 3a of GaN, a 17 nm first intermediate layer 4a …
FIG. 10, comprises a layer 4b (see
FIG. 11 thus illustrates a Nomarski contrast optical microscopic surface view of a structure which, unlike that in
FIG. 12, the photograph on the left corresponding to the interface between the first intermediate layer 4a and the underlying layer 3a of GaN; the photograph on …
FIG. 13 shows TEM images of the voids in the structure in
FIG. 15 illustrates, in the left portion thereof, a Schottky diode produced in the useful-layer- la y er 3 of GaN formed by means of the invention. Please …
FIG. 19 illustrates an example of an RC-LED with a monolithic Bragg mirror based on (A1,:I (Al, In)N; Please amend paragraph [00119] as follows: [00119]
FIG. 23 illustrates another example of a high electron mobility transistor (HEMT) or a field effect transistor (FET), comprising a "spacer" -layer; layer; and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Serial No. 14/129,638 IN THE CLAIMS: Claims 13-30 were previously canceled. Claims 1, 3-6, 8, and 9 have been amended herein. All of the pending claims are presented below. This listing of claims will replace all prior versions and listings of claims in the application. Please enter these claims as amended.
The method of claim 1, wherein the diameter of the substrate is greater than or equal to 150 mm.
The method of claim 1, wherein step (d) comprises epitaxially growing the useful GaN layerto layer to a thickness of at least 5 pm.
Serial No. 14/129,638
Serial No. 14/129,638
13-30 13 canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon epitaxial structure
RC-LED with monolithic Bragg mirror based on (Al,In)N
No layer stack recorded.
High electron mobility transistor (HEMT) or field effect transistor (FET) with spacer layer
Materials described outside the worked examples.
GaN
AlN buffer layer
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13 shows TEM images of the voids in the structure in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Coefficient Of Thermal Expansion | 0.00000559 K⁻¹ | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,093,271Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1), an emerging dislocation density of the order or greater than 5. 109 cm⁻² is observed, wherein, for a similar structure wherein the layer of-GaN- GaN …
FIG. 3). Please amend paragraph [00313] as follows: [00313] A first example of a structure with a dual intermediate layer (see
FIG. 4) successively comprises a silicon substrate 1, a 200 nm thick buffer layer 2 of A l N, a 1.3 p m 3D layer 3a of GaN, a 17 nm first intermediate layer 4a …
FIG. 5) successively comprises a silicon substrate 1, a 200 nm thick buffer layer 2 of A l N, a 1.3 p m 3D layer 3a of GaN, a 17 nm first intermediate layer 4a …
FIG. 10, comprises a layer 4b (see
FIG. 11 thus illustrates a Nomarski contrast optical microscopic surface view of a structure which, unlike that in
FIG. 12, the photograph on the left corresponding to the interface between the first intermediate layer 4a and the underlying layer 3a of GaN; the photograph on …
FIG. 13 shows TEM images of the voids in the structure in
FIG. 15 illustrates, in the left portion thereof, a Schottky diode produced in the useful-layer- la y er 3 of GaN formed by means of the invention. Please …
FIG. 19 illustrates an example of an RC-LED with a monolithic Bragg mirror based on (A1,:I (Al, In)N; Please amend paragraph [00119] as follows: [00119]
FIG. 23 illustrates another example of a high electron mobility transistor (HEMT) or a field effect transistor (FET), comprising a "spacer" -layer; layer; and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Serial No. 14/129,638 IN THE CLAIMS: Claims 13-30 were previously canceled. Claims 1, 3-6, 8, and 9 have been amended herein. All of the pending claims are presented below. This listing of claims will replace all prior versions and listings of claims in the application. Please enter these claims as amended.
The method of claim 1, wherein the diameter of the substrate is greater than or equal to 150 mm.
The method of claim 1, wherein step (d) comprises epitaxially growing the useful GaN layerto layer to a thickness of at least 5 pm.
Serial No. 14/129,638
Serial No. 14/129,638
13-30 13 canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon epitaxial structure
RC-LED with monolithic Bragg mirror based on (Al,In)N
No layer stack recorded.
High electron mobility transistor (HEMT) or field effect transistor (FET) with spacer layer
Materials described outside the worked examples.
GaN
AlN buffer layer
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13 shows TEM images of the voids in the structure in
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Coefficient Of Thermal Expansion | 0.00000559 K⁻¹ | GaN |
Related documents with shared materials, methods, properties, or citations.
No layer stack recorded.
BwAlxGayInzN intermediate layer
BwAlxGayInzN
Silicon substrate
Si
FIG. 23 illustrates another example of a high electron mobility transistor (HEMT) or a field effect transistor (FET), comprising a "spacer" -layer; layer; and …
| 0.00000259 K⁻¹ |
Si |
Resistivity | — | Si |
Layer Thickness | — | GaN |
Thickness | ≤ 10 cm | — |
No layer stack recorded.
BwAlxGayInzN intermediate layer
BwAlxGayInzN
Silicon substrate
Si
FIG. 23 illustrates another example of a high electron mobility transistor (HEMT) or a field effect transistor (FET), comprising a "spacer" -layer; layer; and …
| 0.00000259 K⁻¹ |
Si |
Resistivity | — | Si |
Layer Thickness | — | GaN |
Thickness | ≤ 10 cm | — |
No layer stack recorded.
BwAlxGayInzN intermediate layer
BwAlxGayInzN
Silicon substrate
Si
FIG. 23 illustrates another example of a high electron mobility transistor (HEMT) or a field effect transistor (FET), comprising a "spacer" -layer; layer; and …
| 0.00000259 K⁻¹ |
Si |
Resistivity | — | Si |
Layer Thickness | — | GaN |
Thickness | ≤ 10 cm | — |
No layer stack recorded.
BwAlxGayInzN intermediate layer
BwAlxGayInzN
Silicon substrate
Si
FIG. 23 illustrates another example of a high electron mobility transistor (HEMT) or a field effect transistor (FET), comprising a "spacer" -layer; layer; and …
| 0.00000259 K⁻¹ |
Si |
Resistivity | — | Si |
Layer Thickness | — | GaN |
Thickness | ≤ 10 cm | — |