Patent
US 9,564,260METHOD FOR PREPARING A SILICON DIOXIDE SUBSTRATE-BASED GRAPHENE TRANSPARENT CONDUCTIVE FILM
Yue SHI
US
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Patent
Atlas literature
Patent
US 9,564,260Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a silicon dioxide substrate- based graphene transparent conductive film, which prepares a silicon dioxide substrate on a graphene transparent conductive film, and thereby obtains the silicon dioxide substrate-based graphene transparent conductive film, wherein the preparing step comprises: (1) a graphene transparent conductive film preparation step of preparing the graphene transparent conductive film on a metal substrate to form a first substrate; (2) a silicon dioxide substrate preparation step of preparing the silicon dioxide substrate on the graphene transparent conductive film so as to obtain a laminated structure that consists of the metal substrate, the graphene transparent conductive film, and the silicon dioxide substrate which are sequentially arranged; and (3) an etching step of etching off the metal substrate, thereby obtaining the silicon dioxide substrate-based graphene transparent conductive film.
The method according to claim 1, wherein the silicon dioxide substrate preparation step comprises: a silicon dioxide sol layer forming step of forming a silicon dioxide sol layer on a surface of the graphene transparent conductive film; and Serial No. 14/445,589 Page 2 of 8
The method according to claim 1, wherein the metal substrate is a copper foil substrate.
The method according to claim 1, wherein in the graphene transparent conductive film preparation step, hydrocarbon is used as a carbon source and chemical vapor deposition is employed as a carbon forming method.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
silicon dioxide substrate-based graphene transparent conductive film
Materials described outside the worked examples.
graphene transparent conductive film
silicon dioxide substrate
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 3–7 hours | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,564,260Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a silicon dioxide substrate- based graphene transparent conductive film, which prepares a silicon dioxide substrate on a graphene transparent conductive film, and thereby obtains the silicon dioxide substrate-based graphene transparent conductive film, wherein the preparing step comprises: (1) a graphene transparent conductive film preparation step of preparing the graphene transparent conductive film on a metal substrate to form a first substrate; (2) a silicon dioxide substrate preparation step of preparing the silicon dioxide substrate on the graphene transparent conductive film so as to obtain a laminated structure that consists of the metal substrate, the graphene transparent conductive film, and the silicon dioxide substrate which are sequentially arranged; and (3) an etching step of etching off the metal substrate, thereby obtaining the silicon dioxide substrate-based graphene transparent conductive film.
The method according to claim 1, wherein the silicon dioxide substrate preparation step comprises: a silicon dioxide sol layer forming step of forming a silicon dioxide sol layer on a surface of the graphene transparent conductive film; and Serial No. 14/445,589 Page 2 of 8
The method according to claim 1, wherein the metal substrate is a copper foil substrate.
The method according to claim 1, wherein in the graphene transparent conductive film preparation step, hydrocarbon is used as a carbon source and chemical vapor deposition is employed as a carbon forming method.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
silicon dioxide substrate-based graphene transparent conductive film
Materials described outside the worked examples.
graphene transparent conductive film
silicon dioxide substrate
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 3–7 hours | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,564,260Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a silicon dioxide substrate- based graphene transparent conductive film, which prepares a silicon dioxide substrate on a graphene transparent conductive film, and thereby obtains the silicon dioxide substrate-based graphene transparent conductive film, wherein the preparing step comprises: (1) a graphene transparent conductive film preparation step of preparing the graphene transparent conductive film on a metal substrate to form a first substrate; (2) a silicon dioxide substrate preparation step of preparing the silicon dioxide substrate on the graphene transparent conductive film so as to obtain a laminated structure that consists of the metal substrate, the graphene transparent conductive film, and the silicon dioxide substrate which are sequentially arranged; and (3) an etching step of etching off the metal substrate, thereby obtaining the silicon dioxide substrate-based graphene transparent conductive film.
The method according to claim 1, wherein the silicon dioxide substrate preparation step comprises: a silicon dioxide sol layer forming step of forming a silicon dioxide sol layer on a surface of the graphene transparent conductive film; and Serial No. 14/445,589 Page 2 of 8
The method according to claim 1, wherein the metal substrate is a copper foil substrate.
The method according to claim 1, wherein in the graphene transparent conductive film preparation step, hydrocarbon is used as a carbon source and chemical vapor deposition is employed as a carbon forming method.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
silicon dioxide substrate-based graphene transparent conductive film
Materials described outside the worked examples.
graphene transparent conductive film
silicon dioxide substrate
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 3–7 hours | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,564,260Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a silicon dioxide substrate- based graphene transparent conductive film, which prepares a silicon dioxide substrate on a graphene transparent conductive film, and thereby obtains the silicon dioxide substrate-based graphene transparent conductive film, wherein the preparing step comprises: (1) a graphene transparent conductive film preparation step of preparing the graphene transparent conductive film on a metal substrate to form a first substrate; (2) a silicon dioxide substrate preparation step of preparing the silicon dioxide substrate on the graphene transparent conductive film so as to obtain a laminated structure that consists of the metal substrate, the graphene transparent conductive film, and the silicon dioxide substrate which are sequentially arranged; and (3) an etching step of etching off the metal substrate, thereby obtaining the silicon dioxide substrate-based graphene transparent conductive film.
The method according to claim 1, wherein the silicon dioxide substrate preparation step comprises: a silicon dioxide sol layer forming step of forming a silicon dioxide sol layer on a surface of the graphene transparent conductive film; and Serial No. 14/445,589 Page 2 of 8
The method according to claim 1, wherein the metal substrate is a copper foil substrate.
The method according to claim 1, wherein in the graphene transparent conductive film preparation step, hydrocarbon is used as a carbon source and chemical vapor deposition is employed as a carbon forming method.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
silicon dioxide substrate-based graphene transparent conductive film
Materials described outside the worked examples.
graphene transparent conductive film
silicon dioxide substrate
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 3–7 hours | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
metal substrate (copper foil substrate)
Cu
tetraethylorthosilicate
Si(OC₂H₅)4
water
H₂O
ethanol
C₂H₅OH
ammonia water
NH3·H₂O
hydrocarbon
| 10–60 minutes |
| — |
Thickness | 1–30 µm | — |
metal substrate (copper foil substrate)
Cu
tetraethylorthosilicate
Si(OC₂H₅)4
water
H₂O
ethanol
C₂H₅OH
ammonia water
NH3·H₂O
hydrocarbon
| 10–60 minutes |
| — |
Thickness | 1–30 µm | — |
metal substrate (copper foil substrate)
Cu
tetraethylorthosilicate
Si(OC₂H₅)4
water
H₂O
ethanol
C₂H₅OH
ammonia water
NH3·H₂O
hydrocarbon
| 10–60 minutes |
| — |
Thickness | 1–30 µm | — |
metal substrate (copper foil substrate)
Cu
tetraethylorthosilicate
Si(OC₂H₅)4
water
H₂O
ethanol
C₂H₅OH
ammonia water
NH3·H₂O
hydrocarbon
| 10–60 minutes |
| — |
Thickness | 1–30 µm | — |