Patent
US 9,716,227METHOD OF FORMING A GRAPHENE STRUCTURE
Hans-Joachim Schulze, Peter Irsigler, Guenther Ruhl
2017-07-25·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,716,227Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1D) may for example be desired for forming an electrically conductive connection between a plurality of graphene layers 108, e.g. graphene structures …
FIG. 2A, an opening 110 may be formed in the at least one protrusion 106 of the semiconductor body 102. Thereby, a hollow protrusion 106, e.g. a hollow …
FIG. 3A, with an inside of the at least one graphene layer/structure 108, 108s being free from the carbon- containing semiconductor material, a removal of the …
FIG. 4C. View 400 C shows a cross section along line C-C' of
FIG. 5A, the at least one protrusion 106 of the semiconductor body 102 may, in various embodiments, include doped regions, e.g. two doped regions 1 06a and …
FIG. 6A, an opening 660 may be formed in a body 102, e.g. in a semiconductor body, e.g. in a body containing carbon. The opening 660 may for example be etched, …
FIG. 7 shows a schematic diagram 700 of a method of forming a graphene structure in accordance with various embodiments. [00121] As shown in
FIG. 8 shows a schematic diagram 800 of a method of forming a graphene structure in accordance with various embodiments. [00124] As shown in
FIG. 9 shows a schematic diagram of a method of forming a graphene structure in accordance with various embodiments. Descri p tion [0005] The following …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene structure, comprising: forming a body comprising a base and at least one protrusion extending from the base, wherein the body is a semiconductor body and the at least one protrusion comprises carbon-containing semiconductor material, wherein the carbon-containing semiconductor material is silicon carbide; and forming, by thermal decomposition of the silicon carbide, a graphene layer surrounding an outer peripheral surface of the at least one protrusion from the silicon carbide of the at least one protrusion, wherein the graphene layer extends vertically and perpendicular to the base and comprises at least one carbon nanotube, wherein a relative orientation of the silicon carbide and the at least one protrusion is such that faces of the outer surface of the at least one protrusion comprise a C-face and a Si-face, wherein the C-face and/or the Si-face are parallel to a (0001) plane of the silicon carbide.
The method of claim 1, wherein forming the body comprising the at least one protrusion comprises providing a substrate, and forming at least one trench in the substrate.
The method of claim 1, wherein forming the body comprising the at least one protrusion comprises providing a substrate, and epitaxially growing the at least one protrusion on the substrate.
The method of claim 1, further comprising: removing a portion of the protrusion that resides within the graphene layer.
The method of claim 1, further comprising: forming an opening in the at least one protrusion; and forming a graphene layer on a surface of the opening. withdrawn
The method of claim 1, wherein the graphene layer at an outer peripheral surface of the at least one protrusion forms a closed surface.
The method of claim 1, wherein forming the graphene layer comprises annealing the body.
The method of claim 1, wherein a diameter d of the protrusion is chosen to fulfill the relation d = 78.3 x ((n + m) 2 -n xm) 05 pm, wherein n and m are integer values, at least one of n and m being greater than 0.
The method of claim 1, further comprising: detaching the at least one protrusion from a remaining portion of the body after forming the graphene layer.
The method of claim 1, wherein the outer peripheral surface of the at least one protrusion is cylindrical.
The method of claim 1, wherein at least one physical property of the graphene layer varies in an azimuthal direction of the protrusion.
2-5. canceled
canceled
The method of claim 3, wherein the at least one protrusion comprises a first doped region having a first conductivity type, and a second doped region having a second conductivity type. withdrawn
canceled
canceled
canceled
A method of forming a graphene structure, the method comprising: forming at least one structure with at least one cylindrical outer surface from a silicon carbide substrate, the at least one structure projecting from at least a base of the silicon carbide substrate; and 4 annealing the silicon carbide substrate so that graphene forms at the at least one cylindrical outer surface so as to form at least one straight cylindrical graphene structure, the straight cylindrical structure extending perpendicular to the base, wherein the graphene comprises at least one carbon nanotube. wherein a relative orientation of the silicon carbide and the at least one structure is such that faces of the outer surface of the at least one structure comprise a C-face and a Si-face, wherein the C-face and/or the Si-face are parallel to a (0001) plane of the silicon carbide
25-29. 5 canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with protrusion
straight cylindrical graphene structure
Materials described outside the worked examples.
silicon carbide
SiC
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1D) may for example be desired for forming an electrically conductive connection between a plurality of graphene layers 108, e.g. graphene structures …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 50–1800 °C | — |
Duration | 5–60 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,716,227Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1D) may for example be desired for forming an electrically conductive connection between a plurality of graphene layers 108, e.g. graphene structures …
FIG. 2A, an opening 110 may be formed in the at least one protrusion 106 of the semiconductor body 102. Thereby, a hollow protrusion 106, e.g. a hollow …
FIG. 3A, with an inside of the at least one graphene layer/structure 108, 108s being free from the carbon- containing semiconductor material, a removal of the …
FIG. 4C. View 400 C shows a cross section along line C-C' of
FIG. 5A, the at least one protrusion 106 of the semiconductor body 102 may, in various embodiments, include doped regions, e.g. two doped regions 1 06a and …
FIG. 6A, an opening 660 may be formed in a body 102, e.g. in a semiconductor body, e.g. in a body containing carbon. The opening 660 may for example be etched, …
FIG. 7 shows a schematic diagram 700 of a method of forming a graphene structure in accordance with various embodiments. [00121] As shown in
FIG. 8 shows a schematic diagram 800 of a method of forming a graphene structure in accordance with various embodiments. [00124] As shown in
FIG. 9 shows a schematic diagram of a method of forming a graphene structure in accordance with various embodiments. Descri p tion [0005] The following …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene structure, comprising: forming a body comprising a base and at least one protrusion extending from the base, wherein the body is a semiconductor body and the at least one protrusion comprises carbon-containing semiconductor material, wherein the carbon-containing semiconductor material is silicon carbide; and forming, by thermal decomposition of the silicon carbide, a graphene layer surrounding an outer peripheral surface of the at least one protrusion from the silicon carbide of the at least one protrusion, wherein the graphene layer extends vertically and perpendicular to the base and comprises at least one carbon nanotube, wherein a relative orientation of the silicon carbide and the at least one protrusion is such that faces of the outer surface of the at least one protrusion comprise a C-face and a Si-face, wherein the C-face and/or the Si-face are parallel to a (0001) plane of the silicon carbide.
The method of claim 1, wherein forming the body comprising the at least one protrusion comprises providing a substrate, and forming at least one trench in the substrate.
The method of claim 1, wherein forming the body comprising the at least one protrusion comprises providing a substrate, and epitaxially growing the at least one protrusion on the substrate.
The method of claim 1, further comprising: removing a portion of the protrusion that resides within the graphene layer.
The method of claim 1, further comprising: forming an opening in the at least one protrusion; and forming a graphene layer on a surface of the opening. withdrawn
The method of claim 1, wherein the graphene layer at an outer peripheral surface of the at least one protrusion forms a closed surface.
The method of claim 1, wherein forming the graphene layer comprises annealing the body.
The method of claim 1, wherein a diameter d of the protrusion is chosen to fulfill the relation d = 78.3 x ((n + m) 2 -n xm) 05 pm, wherein n and m are integer values, at least one of n and m being greater than 0.
The method of claim 1, further comprising: detaching the at least one protrusion from a remaining portion of the body after forming the graphene layer.
The method of claim 1, wherein the outer peripheral surface of the at least one protrusion is cylindrical.
The method of claim 1, wherein at least one physical property of the graphene layer varies in an azimuthal direction of the protrusion.
2-5. canceled
canceled
The method of claim 3, wherein the at least one protrusion comprises a first doped region having a first conductivity type, and a second doped region having a second conductivity type. withdrawn
canceled
canceled
canceled
A method of forming a graphene structure, the method comprising: forming at least one structure with at least one cylindrical outer surface from a silicon carbide substrate, the at least one structure projecting from at least a base of the silicon carbide substrate; and 4 annealing the silicon carbide substrate so that graphene forms at the at least one cylindrical outer surface so as to form at least one straight cylindrical graphene structure, the straight cylindrical structure extending perpendicular to the base, wherein the graphene comprises at least one carbon nanotube. wherein a relative orientation of the silicon carbide and the at least one structure is such that faces of the outer surface of the at least one structure comprise a C-face and a Si-face, wherein the C-face and/or the Si-face are parallel to a (0001) plane of the silicon carbide
25-29. 5 canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with protrusion
straight cylindrical graphene structure
Materials described outside the worked examples.
silicon carbide
SiC
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1D) may for example be desired for forming an electrically conductive connection between a plurality of graphene layers 108, e.g. graphene structures …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 50–1800 °C | — |
Duration | 5–60 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,716,227Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1D) may for example be desired for forming an electrically conductive connection between a plurality of graphene layers 108, e.g. graphene structures …
FIG. 2A, an opening 110 may be formed in the at least one protrusion 106 of the semiconductor body 102. Thereby, a hollow protrusion 106, e.g. a hollow …
FIG. 3A, with an inside of the at least one graphene layer/structure 108, 108s being free from the carbon- containing semiconductor material, a removal of the …
FIG. 4C. View 400 C shows a cross section along line C-C' of
FIG. 5A, the at least one protrusion 106 of the semiconductor body 102 may, in various embodiments, include doped regions, e.g. two doped regions 1 06a and …
FIG. 6A, an opening 660 may be formed in a body 102, e.g. in a semiconductor body, e.g. in a body containing carbon. The opening 660 may for example be etched, …
FIG. 7 shows a schematic diagram 700 of a method of forming a graphene structure in accordance with various embodiments. [00121] As shown in
FIG. 8 shows a schematic diagram 800 of a method of forming a graphene structure in accordance with various embodiments. [00124] As shown in
FIG. 9 shows a schematic diagram of a method of forming a graphene structure in accordance with various embodiments. Descri p tion [0005] The following …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene structure, comprising: forming a body comprising a base and at least one protrusion extending from the base, wherein the body is a semiconductor body and the at least one protrusion comprises carbon-containing semiconductor material, wherein the carbon-containing semiconductor material is silicon carbide; and forming, by thermal decomposition of the silicon carbide, a graphene layer surrounding an outer peripheral surface of the at least one protrusion from the silicon carbide of the at least one protrusion, wherein the graphene layer extends vertically and perpendicular to the base and comprises at least one carbon nanotube, wherein a relative orientation of the silicon carbide and the at least one protrusion is such that faces of the outer surface of the at least one protrusion comprise a C-face and a Si-face, wherein the C-face and/or the Si-face are parallel to a (0001) plane of the silicon carbide.
The method of claim 1, wherein forming the body comprising the at least one protrusion comprises providing a substrate, and forming at least one trench in the substrate.
The method of claim 1, wherein forming the body comprising the at least one protrusion comprises providing a substrate, and epitaxially growing the at least one protrusion on the substrate.
The method of claim 1, further comprising: removing a portion of the protrusion that resides within the graphene layer.
The method of claim 1, further comprising: forming an opening in the at least one protrusion; and forming a graphene layer on a surface of the opening. withdrawn
The method of claim 1, wherein the graphene layer at an outer peripheral surface of the at least one protrusion forms a closed surface.
The method of claim 1, wherein forming the graphene layer comprises annealing the body.
The method of claim 1, wherein a diameter d of the protrusion is chosen to fulfill the relation d = 78.3 x ((n + m) 2 -n xm) 05 pm, wherein n and m are integer values, at least one of n and m being greater than 0.
The method of claim 1, further comprising: detaching the at least one protrusion from a remaining portion of the body after forming the graphene layer.
The method of claim 1, wherein the outer peripheral surface of the at least one protrusion is cylindrical.
The method of claim 1, wherein at least one physical property of the graphene layer varies in an azimuthal direction of the protrusion.
2-5. canceled
canceled
The method of claim 3, wherein the at least one protrusion comprises a first doped region having a first conductivity type, and a second doped region having a second conductivity type. withdrawn
canceled
canceled
canceled
A method of forming a graphene structure, the method comprising: forming at least one structure with at least one cylindrical outer surface from a silicon carbide substrate, the at least one structure projecting from at least a base of the silicon carbide substrate; and 4 annealing the silicon carbide substrate so that graphene forms at the at least one cylindrical outer surface so as to form at least one straight cylindrical graphene structure, the straight cylindrical structure extending perpendicular to the base, wherein the graphene comprises at least one carbon nanotube. wherein a relative orientation of the silicon carbide and the at least one structure is such that faces of the outer surface of the at least one structure comprise a C-face and a Si-face, wherein the C-face and/or the Si-face are parallel to a (0001) plane of the silicon carbide
25-29. 5 canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with protrusion
straight cylindrical graphene structure
Materials described outside the worked examples.
silicon carbide
SiC
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1D) may for example be desired for forming an electrically conductive connection between a plurality of graphene layers 108, e.g. graphene structures …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 50–1800 °C | — |
Duration | 5–60 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,716,227Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1D) may for example be desired for forming an electrically conductive connection between a plurality of graphene layers 108, e.g. graphene structures …
FIG. 2A, an opening 110 may be formed in the at least one protrusion 106 of the semiconductor body 102. Thereby, a hollow protrusion 106, e.g. a hollow …
FIG. 3A, with an inside of the at least one graphene layer/structure 108, 108s being free from the carbon- containing semiconductor material, a removal of the …
FIG. 4C. View 400 C shows a cross section along line C-C' of
FIG. 5A, the at least one protrusion 106 of the semiconductor body 102 may, in various embodiments, include doped regions, e.g. two doped regions 1 06a and …
FIG. 6A, an opening 660 may be formed in a body 102, e.g. in a semiconductor body, e.g. in a body containing carbon. The opening 660 may for example be etched, …
FIG. 7 shows a schematic diagram 700 of a method of forming a graphene structure in accordance with various embodiments. [00121] As shown in
FIG. 8 shows a schematic diagram 800 of a method of forming a graphene structure in accordance with various embodiments. [00124] As shown in
FIG. 9 shows a schematic diagram of a method of forming a graphene structure in accordance with various embodiments. Descri p tion [0005] The following …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene structure, comprising: forming a body comprising a base and at least one protrusion extending from the base, wherein the body is a semiconductor body and the at least one protrusion comprises carbon-containing semiconductor material, wherein the carbon-containing semiconductor material is silicon carbide; and forming, by thermal decomposition of the silicon carbide, a graphene layer surrounding an outer peripheral surface of the at least one protrusion from the silicon carbide of the at least one protrusion, wherein the graphene layer extends vertically and perpendicular to the base and comprises at least one carbon nanotube, wherein a relative orientation of the silicon carbide and the at least one protrusion is such that faces of the outer surface of the at least one protrusion comprise a C-face and a Si-face, wherein the C-face and/or the Si-face are parallel to a (0001) plane of the silicon carbide.
The method of claim 1, wherein forming the body comprising the at least one protrusion comprises providing a substrate, and forming at least one trench in the substrate.
The method of claim 1, wherein forming the body comprising the at least one protrusion comprises providing a substrate, and epitaxially growing the at least one protrusion on the substrate.
The method of claim 1, further comprising: removing a portion of the protrusion that resides within the graphene layer.
The method of claim 1, further comprising: forming an opening in the at least one protrusion; and forming a graphene layer on a surface of the opening. withdrawn
The method of claim 1, wherein the graphene layer at an outer peripheral surface of the at least one protrusion forms a closed surface.
The method of claim 1, wherein forming the graphene layer comprises annealing the body.
The method of claim 1, wherein a diameter d of the protrusion is chosen to fulfill the relation d = 78.3 x ((n + m) 2 -n xm) 05 pm, wherein n and m are integer values, at least one of n and m being greater than 0.
The method of claim 1, further comprising: detaching the at least one protrusion from a remaining portion of the body after forming the graphene layer.
The method of claim 1, wherein the outer peripheral surface of the at least one protrusion is cylindrical.
The method of claim 1, wherein at least one physical property of the graphene layer varies in an azimuthal direction of the protrusion.
2-5. canceled
canceled
The method of claim 3, wherein the at least one protrusion comprises a first doped region having a first conductivity type, and a second doped region having a second conductivity type. withdrawn
canceled
canceled
canceled
A method of forming a graphene structure, the method comprising: forming at least one structure with at least one cylindrical outer surface from a silicon carbide substrate, the at least one structure projecting from at least a base of the silicon carbide substrate; and 4 annealing the silicon carbide substrate so that graphene forms at the at least one cylindrical outer surface so as to form at least one straight cylindrical graphene structure, the straight cylindrical structure extending perpendicular to the base, wherein the graphene comprises at least one carbon nanotube. wherein a relative orientation of the silicon carbide and the at least one structure is such that faces of the outer surface of the at least one structure comprise a C-face and a Si-face, wherein the C-face and/or the Si-face are parallel to a (0001) plane of the silicon carbide
25-29. 5 canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with protrusion
straight cylindrical graphene structure
Materials described outside the worked examples.
silicon carbide
SiC
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1D) may for example be desired for forming an electrically conductive connection between a plurality of graphene layers 108, e.g. graphene structures …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 50–1800 °C | — |
Duration | 5–60 minutes |
Related documents with shared materials, methods, properties, or citations.
transistor with graphene/carbon nanotube channel
No layer stack recorded.
carbon nanotube
carbon-containing semiconductor material
copper
Cu
nickel
Ni
germanium
Ge
| — |
transistor with graphene/carbon nanotube channel
No layer stack recorded.
carbon nanotube
carbon-containing semiconductor material
copper
Cu
nickel
Ni
germanium
Ge
| — |
transistor with graphene/carbon nanotube channel
No layer stack recorded.
carbon nanotube
carbon-containing semiconductor material
copper
Cu
nickel
Ni
germanium
Ge
| — |
transistor with graphene/carbon nanotube channel
No layer stack recorded.
carbon nanotube
carbon-containing semiconductor material
copper
Cu
nickel
Ni
germanium
Ge
| — |