Patent
US 8,796,741MONOLITHIC 3-D INTEGRATION USING GRAPHENE
Shiqun Gu
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,796,741Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic three dimensional integrated circuit (IC) device, comprising: a first layer comprising first active devices, wherein the first active devices do not include gra phene; and a second layer comprising second active devices, each having a graphene portion, the second layer being fabricated on the first layer to form a stack of active devices.1 wherein the graphene portion is in direct contact with the first insulating la ye.
The IC device of claim 1, f u rther comprising a base substrate supporting the stack of active devices.
The IC device of claim 1, f u rther comprising a first insulating layer surrounding on the first active devices.
The IC device of claim 1, in which each of the first active devices and the second active devices is a transistor or a sensor.
The IC device of claim 1, further comprising an interconnect coupling the second active devices.
The IC device of claim 1, integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand- held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
canceled
A method for manufacturing a monolithic three dimensional integrated circuit (IC) device, comprising: fabricating a first layer having first active devices on a base substrate; [[and]] growing a graphene layer on a conductive layer of a transitional substrate; transferring the graphene layer onto the first la yer; and patterning and etching the gr a phene layer to form a gr a phene portion of a second lay having second active devices. SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.1.svg 0.45 6.09 Black and white
The method of claim 11, further comprising depositing a first insulating layer around the first active devices.
The method of claim 11, f u rther comprising integrating the monolithic three dimensional integrated circuit (IC) device into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
-4- Docket No. 110662 canceled
A monolithic three dimensional integrated circuit (IC) device, comprising: SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.2.svg 0.16 3.71 Black and white a first insulating layer comprising first active devices, wherein the first active devices do not include graphene; and a second layer comprising a means for fabricating [[a]] second laer-of- active devices, the fabricating means having a reduced temperature for fabrication and improved electron mobility, SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.3.svg 0.16 6.33 Black and white active devices, wherein the fabricating means is in direct contact with the first insulating la yr.
The monolithic three dimensional integrated circuit (IC) device of claim 18, f u rther comprising: means for coupling to the second layer of second active devices.
The monolithic three dimensional integrated circuit (IC) device of claim 18, integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. -5-
Layer stacks claimed or described, ordered top of device to substrate.
monolithic three dimensional integrated circuit (IC) device with graphene-based second active layer
Materials described outside the worked examples.
graphene
nickel or copper conductive layer
silicon oxide or polymer (PMMA) insulating layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,796,741Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic three dimensional integrated circuit (IC) device, comprising: a first layer comprising first active devices, wherein the first active devices do not include gra phene; and a second layer comprising second active devices, each having a graphene portion, the second layer being fabricated on the first layer to form a stack of active devices.1 wherein the graphene portion is in direct contact with the first insulating la ye.
The IC device of claim 1, f u rther comprising a base substrate supporting the stack of active devices.
The IC device of claim 1, f u rther comprising a first insulating layer surrounding on the first active devices.
The IC device of claim 1, in which each of the first active devices and the second active devices is a transistor or a sensor.
The IC device of claim 1, further comprising an interconnect coupling the second active devices.
The IC device of claim 1, integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand- held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
canceled
A method for manufacturing a monolithic three dimensional integrated circuit (IC) device, comprising: fabricating a first layer having first active devices on a base substrate; [[and]] growing a graphene layer on a conductive layer of a transitional substrate; transferring the graphene layer onto the first la yer; and patterning and etching the gr a phene layer to form a gr a phene portion of a second lay having second active devices. SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.1.svg 0.45 6.09 Black and white
The method of claim 11, further comprising depositing a first insulating layer around the first active devices.
The method of claim 11, f u rther comprising integrating the monolithic three dimensional integrated circuit (IC) device into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
-4- Docket No. 110662 canceled
A monolithic three dimensional integrated circuit (IC) device, comprising: SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.2.svg 0.16 3.71 Black and white a first insulating layer comprising first active devices, wherein the first active devices do not include graphene; and a second layer comprising a means for fabricating [[a]] second laer-of- active devices, the fabricating means having a reduced temperature for fabrication and improved electron mobility, SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.3.svg 0.16 6.33 Black and white active devices, wherein the fabricating means is in direct contact with the first insulating la yr.
The monolithic three dimensional integrated circuit (IC) device of claim 18, f u rther comprising: means for coupling to the second layer of second active devices.
The monolithic three dimensional integrated circuit (IC) device of claim 18, integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. -5-
Layer stacks claimed or described, ordered top of device to substrate.
monolithic three dimensional integrated circuit (IC) device with graphene-based second active layer
Materials described outside the worked examples.
graphene
nickel or copper conductive layer
silicon oxide or polymer (PMMA) insulating layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,796,741Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic three dimensional integrated circuit (IC) device, comprising: a first layer comprising first active devices, wherein the first active devices do not include gra phene; and a second layer comprising second active devices, each having a graphene portion, the second layer being fabricated on the first layer to form a stack of active devices.1 wherein the graphene portion is in direct contact with the first insulating la ye.
The IC device of claim 1, f u rther comprising a base substrate supporting the stack of active devices.
The IC device of claim 1, f u rther comprising a first insulating layer surrounding on the first active devices.
The IC device of claim 1, in which each of the first active devices and the second active devices is a transistor or a sensor.
The IC device of claim 1, further comprising an interconnect coupling the second active devices.
The IC device of claim 1, integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand- held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
canceled
A method for manufacturing a monolithic three dimensional integrated circuit (IC) device, comprising: fabricating a first layer having first active devices on a base substrate; [[and]] growing a graphene layer on a conductive layer of a transitional substrate; transferring the graphene layer onto the first la yer; and patterning and etching the gr a phene layer to form a gr a phene portion of a second lay having second active devices. SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.1.svg 0.45 6.09 Black and white
The method of claim 11, further comprising depositing a first insulating layer around the first active devices.
The method of claim 11, f u rther comprising integrating the monolithic three dimensional integrated circuit (IC) device into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
-4- Docket No. 110662 canceled
A monolithic three dimensional integrated circuit (IC) device, comprising: SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.2.svg 0.16 3.71 Black and white a first insulating layer comprising first active devices, wherein the first active devices do not include graphene; and a second layer comprising a means for fabricating [[a]] second laer-of- active devices, the fabricating means having a reduced temperature for fabrication and improved electron mobility, SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.3.svg 0.16 6.33 Black and white active devices, wherein the fabricating means is in direct contact with the first insulating la yr.
The monolithic three dimensional integrated circuit (IC) device of claim 18, f u rther comprising: means for coupling to the second layer of second active devices.
The monolithic three dimensional integrated circuit (IC) device of claim 18, integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. -5-
Layer stacks claimed or described, ordered top of device to substrate.
monolithic three dimensional integrated circuit (IC) device with graphene-based second active layer
Materials described outside the worked examples.
graphene
nickel or copper conductive layer
silicon oxide or polymer (PMMA) insulating layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,796,741Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic three dimensional integrated circuit (IC) device, comprising: a first layer comprising first active devices, wherein the first active devices do not include gra phene; and a second layer comprising second active devices, each having a graphene portion, the second layer being fabricated on the first layer to form a stack of active devices.1 wherein the graphene portion is in direct contact with the first insulating la ye.
The IC device of claim 1, f u rther comprising a base substrate supporting the stack of active devices.
The IC device of claim 1, f u rther comprising a first insulating layer surrounding on the first active devices.
The IC device of claim 1, in which each of the first active devices and the second active devices is a transistor or a sensor.
The IC device of claim 1, further comprising an interconnect coupling the second active devices.
The IC device of claim 1, integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand- held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
canceled
A method for manufacturing a monolithic three dimensional integrated circuit (IC) device, comprising: fabricating a first layer having first active devices on a base substrate; [[and]] growing a graphene layer on a conductive layer of a transitional substrate; transferring the graphene layer onto the first la yer; and patterning and etching the gr a phene layer to form a gr a phene portion of a second lay having second active devices. SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.1.svg 0.45 6.09 Black and white
The method of claim 11, further comprising depositing a first insulating layer around the first active devices.
The method of claim 11, f u rther comprising integrating the monolithic three dimensional integrated circuit (IC) device into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
-4- Docket No. 110662 canceled
A monolithic three dimensional integrated circuit (IC) device, comprising: SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.2.svg 0.16 3.71 Black and white a first insulating layer comprising first active devices, wherein the first active devices do not include graphene; and a second layer comprising a means for fabricating [[a]] second laer-of- active devices, the fabricating means having a reduced temperature for fabrication and improved electron mobility, SVG 13644720.03-10-2014.HSM₄XRXKPXXIFW3.CLM.3.svg 0.16 6.33 Black and white active devices, wherein the fabricating means is in direct contact with the first insulating la yr.
The monolithic three dimensional integrated circuit (IC) device of claim 18, f u rther comprising: means for coupling to the second layer of second active devices.
The monolithic three dimensional integrated circuit (IC) device of claim 18, integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. -5-
Layer stacks claimed or described, ordered top of device to substrate.
monolithic three dimensional integrated circuit (IC) device with graphene-based second active layer
Materials described outside the worked examples.
graphene
nickel or copper conductive layer
silicon oxide or polymer (PMMA) insulating layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
graphene transistor
graphene transistor
graphene transistor
graphene transistor