Patent
US 9,178,020GRAPHENE STRUCTURE AND METHOD OF MANUFACTURING THE GRAPHENE STRUCTURE, AND GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE GRAPHENE DEVICE
Byoung-Iyong CHOI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 9,178,020Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1, 2A and 2 B, and 3A through 3 C are diagrams for describing a method of manufacturing a graphene structure according to an embodiment; [0020]
FIGS. 2A and 2 B, the groove 150 is formed in a predetermined shape by sequentially etching the protective layer 130 and the growth layer 120. The groove 150 …
FIG. 3A.
FIG. 4 is a cross-sectional view of a graphene structure according to another embodiment; [0021]
FIGS. 5, 6A through 6D, and 7A through 7D are diagrams for describing a method of manufacturing a graphene device according to an embodiment; and [0022]
FIG. 6A.
FIG. 7A.
FIG. 8 is a plan view of a graphene device according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(cu rr ent l y amended): A graphene device comprising: at least one channel comprising a first graphene layer; and first and second electrodes connected to two ends of the at least one channel and comprising a second graphene layer, wherein the first graphene layer is disposed only in a plane not parallel to the second graphene layer, and the only graphene layer to which the first graphene layer is electrically connected is the second graphene layer in the first and second electrodes.
: The graphene device of claim 1, wherein the first and second electrodes are integrally formed with the at least one channel.
: The graphene device of claim 1, wherein a plurality of channels are formed between the first and second electrodes, and are aligned in at least one of a horizontal direction and a vertical direction.
: The graphene device of claim 1, wherein each of the at least one channel has a width of several nanometers.
. canceled
: The graphene device of claim 3 c laim 1, wherein the first graphene layer is formed perpendicularly to the second graphene layer.
: A method of manufacturing a graphene device, the method comprising: sequentially forming a growth layer and a protective layer on a substrate; forming at least one first groove penetrating the protective layer and the growth layer to expose side surfaces of the growth layer and the protective layer and an upper surface of the substrate, and second and third grooves penetrating the protective layer to expose side surfaces of the protective layer and an upper surface of the growth layer; forming at least one channel by growing at least one first graphene layer on the side surfaces of the growth layer exposed by the at least one first groove; and forming first and second electrodes by growing a second graphene layer on the upper surface of the growth layer exposed by the second and third grooves.
: The method of claim 7, wherein the second and third grooves are connected to two ends of the at least one first groove.
: The method of claim 7, wherein the growth layer is formed by depositing metal or germanium (Ge) on the substrate.
: The method of claim 7, wherein the growth layer has a thickness of several nanometers.
: The method of claim 7, wherein the protective layer is formed by depositing silicon oxide on the growth layer.
: The method of claim 7, wherein the first and second graphene layers are grown from the exposed side surfaces and the upper surface of the growth layer by using a chemical vapor deposition method. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (transistor-type)
Materials described outside the worked examples.
first graphene layer (channel)
C
growth layer (metal or germanium)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,178,020Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1, 2A and 2 B, and 3A through 3 C are diagrams for describing a method of manufacturing a graphene structure according to an embodiment; [0020]
FIGS. 2A and 2 B, the groove 150 is formed in a predetermined shape by sequentially etching the protective layer 130 and the growth layer 120. The groove 150 …
FIG. 3A.
FIG. 4 is a cross-sectional view of a graphene structure according to another embodiment; [0021]
FIGS. 5, 6A through 6D, and 7A through 7D are diagrams for describing a method of manufacturing a graphene device according to an embodiment; and [0022]
FIG. 6A.
FIG. 7A.
FIG. 8 is a plan view of a graphene device according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(cu rr ent l y amended): A graphene device comprising: at least one channel comprising a first graphene layer; and first and second electrodes connected to two ends of the at least one channel and comprising a second graphene layer, wherein the first graphene layer is disposed only in a plane not parallel to the second graphene layer, and the only graphene layer to which the first graphene layer is electrically connected is the second graphene layer in the first and second electrodes.
: The graphene device of claim 1, wherein the first and second electrodes are integrally formed with the at least one channel.
: The graphene device of claim 1, wherein a plurality of channels are formed between the first and second electrodes, and are aligned in at least one of a horizontal direction and a vertical direction.
: The graphene device of claim 1, wherein each of the at least one channel has a width of several nanometers.
. canceled
: The graphene device of claim 3 c laim 1, wherein the first graphene layer is formed perpendicularly to the second graphene layer.
: A method of manufacturing a graphene device, the method comprising: sequentially forming a growth layer and a protective layer on a substrate; forming at least one first groove penetrating the protective layer and the growth layer to expose side surfaces of the growth layer and the protective layer and an upper surface of the substrate, and second and third grooves penetrating the protective layer to expose side surfaces of the protective layer and an upper surface of the growth layer; forming at least one channel by growing at least one first graphene layer on the side surfaces of the growth layer exposed by the at least one first groove; and forming first and second electrodes by growing a second graphene layer on the upper surface of the growth layer exposed by the second and third grooves.
: The method of claim 7, wherein the second and third grooves are connected to two ends of the at least one first groove.
: The method of claim 7, wherein the growth layer is formed by depositing metal or germanium (Ge) on the substrate.
: The method of claim 7, wherein the growth layer has a thickness of several nanometers.
: The method of claim 7, wherein the protective layer is formed by depositing silicon oxide on the growth layer.
: The method of claim 7, wherein the first and second graphene layers are grown from the exposed side surfaces and the upper surface of the growth layer by using a chemical vapor deposition method. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (transistor-type)
Materials described outside the worked examples.
first graphene layer (channel)
C
growth layer (metal or germanium)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,178,020Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1, 2A and 2 B, and 3A through 3 C are diagrams for describing a method of manufacturing a graphene structure according to an embodiment; [0020]
FIGS. 2A and 2 B, the groove 150 is formed in a predetermined shape by sequentially etching the protective layer 130 and the growth layer 120. The groove 150 …
FIG. 3A.
FIG. 4 is a cross-sectional view of a graphene structure according to another embodiment; [0021]
FIGS. 5, 6A through 6D, and 7A through 7D are diagrams for describing a method of manufacturing a graphene device according to an embodiment; and [0022]
FIG. 6A.
FIG. 7A.
FIG. 8 is a plan view of a graphene device according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(cu rr ent l y amended): A graphene device comprising: at least one channel comprising a first graphene layer; and first and second electrodes connected to two ends of the at least one channel and comprising a second graphene layer, wherein the first graphene layer is disposed only in a plane not parallel to the second graphene layer, and the only graphene layer to which the first graphene layer is electrically connected is the second graphene layer in the first and second electrodes.
: The graphene device of claim 1, wherein the first and second electrodes are integrally formed with the at least one channel.
: The graphene device of claim 1, wherein a plurality of channels are formed between the first and second electrodes, and are aligned in at least one of a horizontal direction and a vertical direction.
: The graphene device of claim 1, wherein each of the at least one channel has a width of several nanometers.
. canceled
: The graphene device of claim 3 c laim 1, wherein the first graphene layer is formed perpendicularly to the second graphene layer.
: A method of manufacturing a graphene device, the method comprising: sequentially forming a growth layer and a protective layer on a substrate; forming at least one first groove penetrating the protective layer and the growth layer to expose side surfaces of the growth layer and the protective layer and an upper surface of the substrate, and second and third grooves penetrating the protective layer to expose side surfaces of the protective layer and an upper surface of the growth layer; forming at least one channel by growing at least one first graphene layer on the side surfaces of the growth layer exposed by the at least one first groove; and forming first and second electrodes by growing a second graphene layer on the upper surface of the growth layer exposed by the second and third grooves.
: The method of claim 7, wherein the second and third grooves are connected to two ends of the at least one first groove.
: The method of claim 7, wherein the growth layer is formed by depositing metal or germanium (Ge) on the substrate.
: The method of claim 7, wherein the growth layer has a thickness of several nanometers.
: The method of claim 7, wherein the protective layer is formed by depositing silicon oxide on the growth layer.
: The method of claim 7, wherein the first and second graphene layers are grown from the exposed side surfaces and the upper surface of the growth layer by using a chemical vapor deposition method. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (transistor-type)
Materials described outside the worked examples.
first graphene layer (channel)
C
growth layer (metal or germanium)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,178,020Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1, 2A and 2 B, and 3A through 3 C are diagrams for describing a method of manufacturing a graphene structure according to an embodiment; [0020]
FIGS. 2A and 2 B, the groove 150 is formed in a predetermined shape by sequentially etching the protective layer 130 and the growth layer 120. The groove 150 …
FIG. 3A.
FIG. 4 is a cross-sectional view of a graphene structure according to another embodiment; [0021]
FIGS. 5, 6A through 6D, and 7A through 7D are diagrams for describing a method of manufacturing a graphene device according to an embodiment; and [0022]
FIG. 6A.
FIG. 7A.
FIG. 8 is a plan view of a graphene device according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(cu rr ent l y amended): A graphene device comprising: at least one channel comprising a first graphene layer; and first and second electrodes connected to two ends of the at least one channel and comprising a second graphene layer, wherein the first graphene layer is disposed only in a plane not parallel to the second graphene layer, and the only graphene layer to which the first graphene layer is electrically connected is the second graphene layer in the first and second electrodes.
: The graphene device of claim 1, wherein the first and second electrodes are integrally formed with the at least one channel.
: The graphene device of claim 1, wherein a plurality of channels are formed between the first and second electrodes, and are aligned in at least one of a horizontal direction and a vertical direction.
: The graphene device of claim 1, wherein each of the at least one channel has a width of several nanometers.
. canceled
: The graphene device of claim 3 c laim 1, wherein the first graphene layer is formed perpendicularly to the second graphene layer.
: A method of manufacturing a graphene device, the method comprising: sequentially forming a growth layer and a protective layer on a substrate; forming at least one first groove penetrating the protective layer and the growth layer to expose side surfaces of the growth layer and the protective layer and an upper surface of the substrate, and second and third grooves penetrating the protective layer to expose side surfaces of the protective layer and an upper surface of the growth layer; forming at least one channel by growing at least one first graphene layer on the side surfaces of the growth layer exposed by the at least one first groove; and forming first and second electrodes by growing a second graphene layer on the upper surface of the growth layer exposed by the second and third grooves.
: The method of claim 7, wherein the second and third grooves are connected to two ends of the at least one first groove.
: The method of claim 7, wherein the growth layer is formed by depositing metal or germanium (Ge) on the substrate.
: The method of claim 7, wherein the growth layer has a thickness of several nanometers.
: The method of claim 7, wherein the protective layer is formed by depositing silicon oxide on the growth layer.
: The method of claim 7, wherein the first and second graphene layers are grown from the exposed side surfaces and the upper surface of the growth layer by using a chemical vapor deposition method. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (transistor-type)
Materials described outside the worked examples.
first graphene layer (channel)
C
growth layer (metal or germanium)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
protective layer (silicon oxide)
SiO₂
germanium growth layer
Ge
nickel (growth layer metal)
Ni
platinum (growth layer metal)
Pt
ruthenium (growth layer metal)
Ru
cobalt (growth layer metal)
Co
iridium (growth layer metal)
Ir
copper (growth layer metal)
Cu
METHODS OF FABRICATION OF GRAPHENE NANORIBBONS
protective layer (silicon oxide)
SiO₂
germanium growth layer
Ge
nickel (growth layer metal)
Ni
platinum (growth layer metal)
Pt
ruthenium (growth layer metal)
Ru
cobalt (growth layer metal)
Co
iridium (growth layer metal)
Ir
copper (growth layer metal)
Cu
METHODS OF FABRICATION OF GRAPHENE NANORIBBONS
protective layer (silicon oxide)
SiO₂
germanium growth layer
Ge
nickel (growth layer metal)
Ni
platinum (growth layer metal)
Pt
ruthenium (growth layer metal)
Ru
cobalt (growth layer metal)
Co
iridium (growth layer metal)
Ir
copper (growth layer metal)
Cu
METHODS OF FABRICATION OF GRAPHENE NANORIBBONS
protective layer (silicon oxide)
SiO₂
germanium growth layer
Ge
nickel (growth layer metal)
Ni
platinum (growth layer metal)
Pt
ruthenium (growth layer metal)
Ru
cobalt (growth layer metal)
Co
iridium (growth layer metal)
Ir
copper (growth layer metal)
Cu