Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene member according to an embodiment; [29]
FIGS. 2 through 7 are cross-sectional views for explaining a method of manufacturing graphene according to an embodiment; and [30]
FIG. 3, the graphene member 100 on which the transfer member 150 is placed soaked in a water bath 160, and ultrasonic waves generated from an ultra sonic wave …
FIG. 4, the metal catalyst layer 130 is separated from the oxide layer 120 by applying a predetermined force P in a direction indicated by the arrow while the …
FIG. 5, after the transfer member 150 is taken out from the water bath 160, the metal catalyst layer 130 is removed by an etching process (operation S₅). [57] …
FIG. 6, that is, the state in which the graphene 140 is transferred onto the transfer member 150, may not be the final one. That is, when necessary, the …
FIG. 7, the graphene 140 may be transferred to another transfer member 180 (for example, a final transfer member formed of PET material) from the transfer …
FIG. 8 is a flow chart showing a method of manufacturing graphene according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of manufacturing graphene, the method comprising: preparing a graphene member comprising a base member, a hydrophilic oxide layer formed on the base member, a hydrophobic metal catalyst layer formed on the oxide layer, and graphene grown on the metal catalyst layer; applying water to the graphene member; separating the metal catalyst layer from the oxide layer; and removing the metal catalyst layer using an etching process, wherein the applying water to the graphene member comprises generating a gap in between the oxide layer and the metal catalyst layer via the penetration of water between the oxide layer and the metal catalyst layer.
: The method of claim 1, wherein the base member comprises silicon (Si).
: The method of claim 1, wherein the oxide layer comprises silicon dioxide (Si 02&iG-).
: The method of claim 1, wherein the metal catalyst layer comprises at least a metal selected from the group consisting of Ni, Cu, Al, Fe, Co, and W.
: The method of claim 1, wherein the preparing the graphene member further comprises disposing a transfer member onto the graphene.
: The method of claim 1, wherein the applying water to the graphene member comprises ultrasonic wave processing on the graphene member by applying ultrasonic waves.
: The method of claim 1, wherein the applying water to the graphene member comprises soaking the graphene member in water in a water bath.
: The method of claim 1, wherein the separating the metal catalyst layer from the oxide layer comprises applying a predetermined force to the graphene member.
: The method of claim 1, wherein the etching process is performed using at least one solution selected from the group consisting of an acid, a hydrogen fluoride solution, a buffered oxide etch (BOE) solution, a FeC l 3 solution, and a Fe(N o3)3 solution.
: The method of claim 1 further comprising, after the removing the metal catalyst layer using the etching process, transferring the graphene onto a substrate or a device.
: Graphene obtained from the method of claim 1. withdrawn
: A conductive thin film comprising the graphene obtained from the method of claim 1. withdrawn
: A transparent electrode comprising the graphene obtained from the method of claim 1. withdrawn
: A radiating or heating device comprising the graphene obtained from the method of claim 1. withdrawn
. canceled
18-22.. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene member
Materials described outside the worked examples.
graphene
silicon
Si
silicon dioxide
SiO₂
metal catalyst layer
nickel
Ni
copper
Cu
aluminum
Al
iron
Fe
cobalt
Co
tungsten
W
polydimethylsiloxane
polyethylene terephthalate
polyimide
glass
synthesized rubber
natural rubber
hydrogen fluoride solution
HF
buffered oxide etch (BOE) solution
iron(III) chloride solution
FeCl₃
iron(III) nitrate solution
Fe(NO₃)3
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
SEMICONDUCTOR DEVICE COMPRISING A GRAPHENE WIRE
ULTRATHIN GRAPHENE/POLYMER LAMINATE FILMS
METHOD FOR FABRICATING THREE DIMENSIONAL GRAPHENE STRUCTURES USING CATALYST TEMPLATES
METHOD OF MANUFACTURING GRAPHENE
GRAPHENE STRUCTURE AND METHOD OF MANUFACTURING THE GRAPHENE STRUCTURE, AND GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE GRAPHENE DEVICE
COMPOSITE STRUCTURE OF GRAPHENE AND POLYMER AND METHOD OF MANUFACTURING THE SAME
METHODS OF FABRICATION OF GRAPHENE NANORIBBONS
Large area deposition of graphene via hetero-epitaxial growth, and products including the same
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR GROWING GRAPHENE
CONTROLLED SYNTHESIS OF MONOLITHICALLY-INTEGRATED GRAPHENE STRUCTURE
METHOD FOR THE CONTROLLED GROWTH OF A GRAPHENE FILM
SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANTATION
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene member according to an embodiment; [29]
FIGS. 2 through 7 are cross-sectional views for explaining a method of manufacturing graphene according to an embodiment; and [30]
FIG. 3, the graphene member 100 on which the transfer member 150 is placed soaked in a water bath 160, and ultrasonic waves generated from an ultra sonic wave …
FIG. 4, the metal catalyst layer 130 is separated from the oxide layer 120 by applying a predetermined force P in a direction indicated by the arrow while the …
FIG. 5, after the transfer member 150 is taken out from the water bath 160, the metal catalyst layer 130 is removed by an etching process (operation S₅). [57] …
FIG. 6, that is, the state in which the graphene 140 is transferred onto the transfer member 150, may not be the final one. That is, when necessary, the …
FIG. 7, the graphene 140 may be transferred to another transfer member 180 (for example, a final transfer member formed of PET material) from the transfer …
FIG. 8 is a flow chart showing a method of manufacturing graphene according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of manufacturing graphene, the method comprising: preparing a graphene member comprising a base member, a hydrophilic oxide layer formed on the base member, a hydrophobic metal catalyst layer formed on the oxide layer, and graphene grown on the metal catalyst layer; applying water to the graphene member; separating the metal catalyst layer from the oxide layer; and removing the metal catalyst layer using an etching process, wherein the applying water to the graphene member comprises generating a gap in between the oxide layer and the metal catalyst layer via the penetration of water between the oxide layer and the metal catalyst layer.
: The method of claim 1, wherein the base member comprises silicon (Si).
: The method of claim 1, wherein the oxide layer comprises silicon dioxide (Si 02&iG-).
: The method of claim 1, wherein the metal catalyst layer comprises at least a metal selected from the group consisting of Ni, Cu, Al, Fe, Co, and W.
: The method of claim 1, wherein the preparing the graphene member further comprises disposing a transfer member onto the graphene.
: The method of claim 1, wherein the applying water to the graphene member comprises ultrasonic wave processing on the graphene member by applying ultrasonic waves.
: The method of claim 1, wherein the applying water to the graphene member comprises soaking the graphene member in water in a water bath.
: The method of claim 1, wherein the separating the metal catalyst layer from the oxide layer comprises applying a predetermined force to the graphene member.
: The method of claim 1, wherein the etching process is performed using at least one solution selected from the group consisting of an acid, a hydrogen fluoride solution, a buffered oxide etch (BOE) solution, a FeC l 3 solution, and a Fe(N o3)3 solution.
: The method of claim 1 further comprising, after the removing the metal catalyst layer using the etching process, transferring the graphene onto a substrate or a device.
: Graphene obtained from the method of claim 1. withdrawn
: A conductive thin film comprising the graphene obtained from the method of claim 1. withdrawn
: A transparent electrode comprising the graphene obtained from the method of claim 1. withdrawn
: A radiating or heating device comprising the graphene obtained from the method of claim 1. withdrawn
. canceled
18-22.. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene member
Materials described outside the worked examples.
graphene
silicon
Si
silicon dioxide
SiO₂
metal catalyst layer
nickel
Ni
copper
Cu
aluminum
Al
iron
Fe
cobalt
Co
tungsten
W
polydimethylsiloxane
polyethylene terephthalate
polyimide
glass
synthesized rubber
natural rubber
hydrogen fluoride solution
HF
buffered oxide etch (BOE) solution
iron(III) chloride solution
FeCl₃
iron(III) nitrate solution
Fe(NO₃)3
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
SEMICONDUCTOR DEVICE COMPRISING A GRAPHENE WIRE
ULTRATHIN GRAPHENE/POLYMER LAMINATE FILMS
METHOD FOR FABRICATING THREE DIMENSIONAL GRAPHENE STRUCTURES USING CATALYST TEMPLATES
METHOD OF MANUFACTURING GRAPHENE
GRAPHENE STRUCTURE AND METHOD OF MANUFACTURING THE GRAPHENE STRUCTURE, AND GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE GRAPHENE DEVICE
COMPOSITE STRUCTURE OF GRAPHENE AND POLYMER AND METHOD OF MANUFACTURING THE SAME
METHODS OF FABRICATION OF GRAPHENE NANORIBBONS
Large area deposition of graphene via hetero-epitaxial growth, and products including the same
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR GROWING GRAPHENE
CONTROLLED SYNTHESIS OF MONOLITHICALLY-INTEGRATED GRAPHENE STRUCTURE
METHOD FOR THE CONTROLLED GROWTH OF A GRAPHENE FILM
SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANTATION
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene member according to an embodiment; [29]
FIGS. 2 through 7 are cross-sectional views for explaining a method of manufacturing graphene according to an embodiment; and [30]
FIG. 3, the graphene member 100 on which the transfer member 150 is placed soaked in a water bath 160, and ultrasonic waves generated from an ultra sonic wave …
FIG. 4, the metal catalyst layer 130 is separated from the oxide layer 120 by applying a predetermined force P in a direction indicated by the arrow while the …
FIG. 5, after the transfer member 150 is taken out from the water bath 160, the metal catalyst layer 130 is removed by an etching process (operation S₅). [57] …
FIG. 6, that is, the state in which the graphene 140 is transferred onto the transfer member 150, may not be the final one. That is, when necessary, the …
FIG. 7, the graphene 140 may be transferred to another transfer member 180 (for example, a final transfer member formed of PET material) from the transfer …
FIG. 8 is a flow chart showing a method of manufacturing graphene according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of manufacturing graphene, the method comprising: preparing a graphene member comprising a base member, a hydrophilic oxide layer formed on the base member, a hydrophobic metal catalyst layer formed on the oxide layer, and graphene grown on the metal catalyst layer; applying water to the graphene member; separating the metal catalyst layer from the oxide layer; and removing the metal catalyst layer using an etching process, wherein the applying water to the graphene member comprises generating a gap in between the oxide layer and the metal catalyst layer via the penetration of water between the oxide layer and the metal catalyst layer.
: The method of claim 1, wherein the base member comprises silicon (Si).
: The method of claim 1, wherein the oxide layer comprises silicon dioxide (Si 02&iG-).
: The method of claim 1, wherein the metal catalyst layer comprises at least a metal selected from the group consisting of Ni, Cu, Al, Fe, Co, and W.
: The method of claim 1, wherein the preparing the graphene member further comprises disposing a transfer member onto the graphene.
: The method of claim 1, wherein the applying water to the graphene member comprises ultrasonic wave processing on the graphene member by applying ultrasonic waves.
: The method of claim 1, wherein the applying water to the graphene member comprises soaking the graphene member in water in a water bath.
: The method of claim 1, wherein the separating the metal catalyst layer from the oxide layer comprises applying a predetermined force to the graphene member.
: The method of claim 1, wherein the etching process is performed using at least one solution selected from the group consisting of an acid, a hydrogen fluoride solution, a buffered oxide etch (BOE) solution, a FeC l 3 solution, and a Fe(N o3)3 solution.
: The method of claim 1 further comprising, after the removing the metal catalyst layer using the etching process, transferring the graphene onto a substrate or a device.
: Graphene obtained from the method of claim 1. withdrawn
: A conductive thin film comprising the graphene obtained from the method of claim 1. withdrawn
: A transparent electrode comprising the graphene obtained from the method of claim 1. withdrawn
: A radiating or heating device comprising the graphene obtained from the method of claim 1. withdrawn
. canceled
18-22.. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene member
Materials described outside the worked examples.
graphene
silicon
Si
silicon dioxide
SiO₂
metal catalyst layer
nickel
Ni
copper
Cu
aluminum
Al
iron
Fe
cobalt
Co
tungsten
W
polydimethylsiloxane
polyethylene terephthalate
polyimide
glass
synthesized rubber
natural rubber
hydrogen fluoride solution
HF
buffered oxide etch (BOE) solution
iron(III) chloride solution
FeCl₃
iron(III) nitrate solution
Fe(NO₃)3
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
SEMICONDUCTOR DEVICE COMPRISING A GRAPHENE WIRE
ULTRATHIN GRAPHENE/POLYMER LAMINATE FILMS
METHOD FOR FABRICATING THREE DIMENSIONAL GRAPHENE STRUCTURES USING CATALYST TEMPLATES
METHOD OF MANUFACTURING GRAPHENE
GRAPHENE STRUCTURE AND METHOD OF MANUFACTURING THE GRAPHENE STRUCTURE, AND GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE GRAPHENE DEVICE
COMPOSITE STRUCTURE OF GRAPHENE AND POLYMER AND METHOD OF MANUFACTURING THE SAME
METHODS OF FABRICATION OF GRAPHENE NANORIBBONS
Large area deposition of graphene via hetero-epitaxial growth, and products including the same
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR GROWING GRAPHENE
CONTROLLED SYNTHESIS OF MONOLITHICALLY-INTEGRATED GRAPHENE STRUCTURE
METHOD FOR THE CONTROLLED GROWTH OF A GRAPHENE FILM
SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANTATION
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene member according to an embodiment; [29]
FIGS. 2 through 7 are cross-sectional views for explaining a method of manufacturing graphene according to an embodiment; and [30]
FIG. 3, the graphene member 100 on which the transfer member 150 is placed soaked in a water bath 160, and ultrasonic waves generated from an ultra sonic wave …
FIG. 4, the metal catalyst layer 130 is separated from the oxide layer 120 by applying a predetermined force P in a direction indicated by the arrow while the …
FIG. 5, after the transfer member 150 is taken out from the water bath 160, the metal catalyst layer 130 is removed by an etching process (operation S₅). [57] …
FIG. 6, that is, the state in which the graphene 140 is transferred onto the transfer member 150, may not be the final one. That is, when necessary, the …
FIG. 7, the graphene 140 may be transferred to another transfer member 180 (for example, a final transfer member formed of PET material) from the transfer …
FIG. 8 is a flow chart showing a method of manufacturing graphene according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of manufacturing graphene, the method comprising: preparing a graphene member comprising a base member, a hydrophilic oxide layer formed on the base member, a hydrophobic metal catalyst layer formed on the oxide layer, and graphene grown on the metal catalyst layer; applying water to the graphene member; separating the metal catalyst layer from the oxide layer; and removing the metal catalyst layer using an etching process, wherein the applying water to the graphene member comprises generating a gap in between the oxide layer and the metal catalyst layer via the penetration of water between the oxide layer and the metal catalyst layer.
: The method of claim 1, wherein the base member comprises silicon (Si).
: The method of claim 1, wherein the oxide layer comprises silicon dioxide (Si 02&iG-).
: The method of claim 1, wherein the metal catalyst layer comprises at least a metal selected from the group consisting of Ni, Cu, Al, Fe, Co, and W.
: The method of claim 1, wherein the preparing the graphene member further comprises disposing a transfer member onto the graphene.
: The method of claim 1, wherein the applying water to the graphene member comprises ultrasonic wave processing on the graphene member by applying ultrasonic waves.
: The method of claim 1, wherein the applying water to the graphene member comprises soaking the graphene member in water in a water bath.
: The method of claim 1, wherein the separating the metal catalyst layer from the oxide layer comprises applying a predetermined force to the graphene member.
: The method of claim 1, wherein the etching process is performed using at least one solution selected from the group consisting of an acid, a hydrogen fluoride solution, a buffered oxide etch (BOE) solution, a FeC l 3 solution, and a Fe(N o3)3 solution.
: The method of claim 1 further comprising, after the removing the metal catalyst layer using the etching process, transferring the graphene onto a substrate or a device.
: Graphene obtained from the method of claim 1. withdrawn
: A conductive thin film comprising the graphene obtained from the method of claim 1. withdrawn
: A transparent electrode comprising the graphene obtained from the method of claim 1. withdrawn
: A radiating or heating device comprising the graphene obtained from the method of claim 1. withdrawn
. canceled
18-22.. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene member
Materials described outside the worked examples.
graphene
silicon
Si
silicon dioxide
SiO₂
metal catalyst layer
nickel
Ni
copper
Cu
aluminum
Al
iron
Fe
cobalt
Co
tungsten
W
polydimethylsiloxane
polyethylene terephthalate
polyimide
glass
synthesized rubber
natural rubber
hydrogen fluoride solution
HF
buffered oxide etch (BOE) solution
iron(III) chloride solution
FeCl₃
iron(III) nitrate solution
Fe(NO₃)3
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
SEMICONDUCTOR DEVICE COMPRISING A GRAPHENE WIRE
ULTRATHIN GRAPHENE/POLYMER LAMINATE FILMS
METHOD FOR FABRICATING THREE DIMENSIONAL GRAPHENE STRUCTURES USING CATALYST TEMPLATES
METHOD OF MANUFACTURING GRAPHENE
GRAPHENE STRUCTURE AND METHOD OF MANUFACTURING THE GRAPHENE STRUCTURE, AND GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE GRAPHENE DEVICE
COMPOSITE STRUCTURE OF GRAPHENE AND POLYMER AND METHOD OF MANUFACTURING THE SAME
METHODS OF FABRICATION OF GRAPHENE NANORIBBONS
Large area deposition of graphene via hetero-epitaxial growth, and products including the same
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR GROWING GRAPHENE
CONTROLLED SYNTHESIS OF MONOLITHICALLY-INTEGRATED GRAPHENE STRUCTURE
METHOD FOR THE CONTROLLED GROWTH OF A GRAPHENE FILM
SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANTATION
