Patent
US 8,975,113METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR GROWING GRAPHENE
Kenjiro HAYASHI
US
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Patent
Atlas literature
Patent
US 8,975,113Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor device, comprising: forming a catalyst film over a substrate; growing a graphene on the catalyst film; forming a gap through which a lower surface of the catalyst film is exposed; and removing the catalyst film through the gap.
The method for manufacturing the semiconductor device according to claim 1, further comprising f o rming a base over the substrate, before the forming the catalyst film, wherein the catalyst film is formed on the base, and the forming the gap comprises removing the base.
The method for manufacturing the semiconductor device according to claim 1, wherein the forming the gap comprising etching a surface of the substrate to form a recessed portion extending to a lower part of the catalyst film.
The method for manufacturing the semiconductor device according to claim 1, further comprising forming two electrodes which cover end portions of the graphene, before the removing the-34-catalyst film.
The method for manufacturing the semiconductor device according to claim 1, wherein the substrate comprises an insulation film formed on a surface on a side of which the catalyst film is to be formed.
The method for manufacturing the semiconductor device according to claim 1 4, wherein, in the removing the sacrifice film to expose the upper surface of the catalyst film, if a part of the material film exists on the sacrifice film, the part is removed together w i th the sacrifice film.
The method for manufacturing the semiconductor device according to cla i m 2, wherein, as the base, one which does not function as a catalyst for a graphene i s formed.
A method for manufacturing a semiconductor device, c o mprising: forming a catalyst film o ver a substrate; forming a protective film through which an upper surface of the catalyst film is exposed; and growing a graphene on the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to cla i m 8, wherein the protective film covers at least a part of a side surface of the catalyst film. 1Q. The method for manufacturing the semiconductor device according to claim 8, further comprising removing the protective film, after the growing the graphene.-35-11. The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises: forming a material film for the protective film over the substrate, the material film covering the catalyst film; and polishing the material film until the upper surface of the catalyst film is exposed.
The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises: forming a sacrifice film which covers the upper surface of the catalyst film; forming a material film for the protective film over the substrate, the mater i al film covering at least a part of a side surface of the catalyst film, and at least a part of a side surface of the sacrifice film being exposed; and removing the sacrifice film to expose the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises:-36-forming a sacrifice film which covers the upper surface of the catalyst film; etching a side surface of the catalyst film to make the side surface of the catalyst film recede toward an inner side of a side surface of the sacrifice film; forming a material film for the protective film over the substrate, the material film covering at least a part of the side surface of the catalyst film beneath the sacrifice film, and at least a part of the side surface of the sacrifice film being exposed through the material film; and removing the sacrifice film to expose the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, further comprising forming two electrodes which cover end portions of the graphene, before the removing the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, wherein the substrate comprises an insulation film formed on a surface on a side of which the catalyst film is to be formed.
A method f o r growing a graphene, comprising: forming a catalyst film o ver a substrate; growing the graphene on the catalyst film; forming a gap through which a lower surface of the catalyst film is exposed; and removing the catalyst film through the gap.
A method for growing a graphene, comprising: forming a catalyst film over a substrate; forming a protective film through which an upper surface of the catalyst film is exposed; and growing the graphene on the upper surface of the catalyst film.-38-What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
catalyst film
iron film
Fe
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,975,113Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor device, comprising: forming a catalyst film over a substrate; growing a graphene on the catalyst film; forming a gap through which a lower surface of the catalyst film is exposed; and removing the catalyst film through the gap.
The method for manufacturing the semiconductor device according to claim 1, further comprising f o rming a base over the substrate, before the forming the catalyst film, wherein the catalyst film is formed on the base, and the forming the gap comprises removing the base.
The method for manufacturing the semiconductor device according to claim 1, wherein the forming the gap comprising etching a surface of the substrate to form a recessed portion extending to a lower part of the catalyst film.
The method for manufacturing the semiconductor device according to claim 1, further comprising forming two electrodes which cover end portions of the graphene, before the removing the-34-catalyst film.
The method for manufacturing the semiconductor device according to claim 1, wherein the substrate comprises an insulation film formed on a surface on a side of which the catalyst film is to be formed.
The method for manufacturing the semiconductor device according to claim 1 4, wherein, in the removing the sacrifice film to expose the upper surface of the catalyst film, if a part of the material film exists on the sacrifice film, the part is removed together w i th the sacrifice film.
The method for manufacturing the semiconductor device according to cla i m 2, wherein, as the base, one which does not function as a catalyst for a graphene i s formed.
A method for manufacturing a semiconductor device, c o mprising: forming a catalyst film o ver a substrate; forming a protective film through which an upper surface of the catalyst film is exposed; and growing a graphene on the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to cla i m 8, wherein the protective film covers at least a part of a side surface of the catalyst film. 1Q. The method for manufacturing the semiconductor device according to claim 8, further comprising removing the protective film, after the growing the graphene.-35-11. The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises: forming a material film for the protective film over the substrate, the material film covering the catalyst film; and polishing the material film until the upper surface of the catalyst film is exposed.
The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises: forming a sacrifice film which covers the upper surface of the catalyst film; forming a material film for the protective film over the substrate, the mater i al film covering at least a part of a side surface of the catalyst film, and at least a part of a side surface of the sacrifice film being exposed; and removing the sacrifice film to expose the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises:-36-forming a sacrifice film which covers the upper surface of the catalyst film; etching a side surface of the catalyst film to make the side surface of the catalyst film recede toward an inner side of a side surface of the sacrifice film; forming a material film for the protective film over the substrate, the material film covering at least a part of the side surface of the catalyst film beneath the sacrifice film, and at least a part of the side surface of the sacrifice film being exposed through the material film; and removing the sacrifice film to expose the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, further comprising forming two electrodes which cover end portions of the graphene, before the removing the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, wherein the substrate comprises an insulation film formed on a surface on a side of which the catalyst film is to be formed.
A method f o r growing a graphene, comprising: forming a catalyst film o ver a substrate; growing the graphene on the catalyst film; forming a gap through which a lower surface of the catalyst film is exposed; and removing the catalyst film through the gap.
A method for growing a graphene, comprising: forming a catalyst film over a substrate; forming a protective film through which an upper surface of the catalyst film is exposed; and growing the graphene on the upper surface of the catalyst film.-38-What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
catalyst film
iron film
Fe
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,975,113Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor device, comprising: forming a catalyst film over a substrate; growing a graphene on the catalyst film; forming a gap through which a lower surface of the catalyst film is exposed; and removing the catalyst film through the gap.
The method for manufacturing the semiconductor device according to claim 1, further comprising f o rming a base over the substrate, before the forming the catalyst film, wherein the catalyst film is formed on the base, and the forming the gap comprises removing the base.
The method for manufacturing the semiconductor device according to claim 1, wherein the forming the gap comprising etching a surface of the substrate to form a recessed portion extending to a lower part of the catalyst film.
The method for manufacturing the semiconductor device according to claim 1, further comprising forming two electrodes which cover end portions of the graphene, before the removing the-34-catalyst film.
The method for manufacturing the semiconductor device according to claim 1, wherein the substrate comprises an insulation film formed on a surface on a side of which the catalyst film is to be formed.
The method for manufacturing the semiconductor device according to claim 1 4, wherein, in the removing the sacrifice film to expose the upper surface of the catalyst film, if a part of the material film exists on the sacrifice film, the part is removed together w i th the sacrifice film.
The method for manufacturing the semiconductor device according to cla i m 2, wherein, as the base, one which does not function as a catalyst for a graphene i s formed.
A method for manufacturing a semiconductor device, c o mprising: forming a catalyst film o ver a substrate; forming a protective film through which an upper surface of the catalyst film is exposed; and growing a graphene on the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to cla i m 8, wherein the protective film covers at least a part of a side surface of the catalyst film. 1Q. The method for manufacturing the semiconductor device according to claim 8, further comprising removing the protective film, after the growing the graphene.-35-11. The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises: forming a material film for the protective film over the substrate, the material film covering the catalyst film; and polishing the material film until the upper surface of the catalyst film is exposed.
The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises: forming a sacrifice film which covers the upper surface of the catalyst film; forming a material film for the protective film over the substrate, the mater i al film covering at least a part of a side surface of the catalyst film, and at least a part of a side surface of the sacrifice film being exposed; and removing the sacrifice film to expose the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises:-36-forming a sacrifice film which covers the upper surface of the catalyst film; etching a side surface of the catalyst film to make the side surface of the catalyst film recede toward an inner side of a side surface of the sacrifice film; forming a material film for the protective film over the substrate, the material film covering at least a part of the side surface of the catalyst film beneath the sacrifice film, and at least a part of the side surface of the sacrifice film being exposed through the material film; and removing the sacrifice film to expose the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, further comprising forming two electrodes which cover end portions of the graphene, before the removing the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, wherein the substrate comprises an insulation film formed on a surface on a side of which the catalyst film is to be formed.
A method f o r growing a graphene, comprising: forming a catalyst film o ver a substrate; growing the graphene on the catalyst film; forming a gap through which a lower surface of the catalyst film is exposed; and removing the catalyst film through the gap.
A method for growing a graphene, comprising: forming a catalyst film over a substrate; forming a protective film through which an upper surface of the catalyst film is exposed; and growing the graphene on the upper surface of the catalyst film.-38-What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
catalyst film
iron film
Fe
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,975,113Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor device, comprising: forming a catalyst film over a substrate; growing a graphene on the catalyst film; forming a gap through which a lower surface of the catalyst film is exposed; and removing the catalyst film through the gap.
The method for manufacturing the semiconductor device according to claim 1, further comprising f o rming a base over the substrate, before the forming the catalyst film, wherein the catalyst film is formed on the base, and the forming the gap comprises removing the base.
The method for manufacturing the semiconductor device according to claim 1, wherein the forming the gap comprising etching a surface of the substrate to form a recessed portion extending to a lower part of the catalyst film.
The method for manufacturing the semiconductor device according to claim 1, further comprising forming two electrodes which cover end portions of the graphene, before the removing the-34-catalyst film.
The method for manufacturing the semiconductor device according to claim 1, wherein the substrate comprises an insulation film formed on a surface on a side of which the catalyst film is to be formed.
The method for manufacturing the semiconductor device according to claim 1 4, wherein, in the removing the sacrifice film to expose the upper surface of the catalyst film, if a part of the material film exists on the sacrifice film, the part is removed together w i th the sacrifice film.
The method for manufacturing the semiconductor device according to cla i m 2, wherein, as the base, one which does not function as a catalyst for a graphene i s formed.
A method for manufacturing a semiconductor device, c o mprising: forming a catalyst film o ver a substrate; forming a protective film through which an upper surface of the catalyst film is exposed; and growing a graphene on the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to cla i m 8, wherein the protective film covers at least a part of a side surface of the catalyst film. 1Q. The method for manufacturing the semiconductor device according to claim 8, further comprising removing the protective film, after the growing the graphene.-35-11. The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises: forming a material film for the protective film over the substrate, the material film covering the catalyst film; and polishing the material film until the upper surface of the catalyst film is exposed.
The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises: forming a sacrifice film which covers the upper surface of the catalyst film; forming a material film for the protective film over the substrate, the mater i al film covering at least a part of a side surface of the catalyst film, and at least a part of a side surface of the sacrifice film being exposed; and removing the sacrifice film to expose the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, wherein the forming the protective film comprises:-36-forming a sacrifice film which covers the upper surface of the catalyst film; etching a side surface of the catalyst film to make the side surface of the catalyst film recede toward an inner side of a side surface of the sacrifice film; forming a material film for the protective film over the substrate, the material film covering at least a part of the side surface of the catalyst film beneath the sacrifice film, and at least a part of the side surface of the sacrifice film being exposed through the material film; and removing the sacrifice film to expose the upper surface of the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, further comprising forming two electrodes which cover end portions of the graphene, before the removing the catalyst film.
The method for manufacturing the semiconductor device according to claim 8, wherein the substrate comprises an insulation film formed on a surface on a side of which the catalyst film is to be formed.
A method f o r growing a graphene, comprising: forming a catalyst film o ver a substrate; growing the graphene on the catalyst film; forming a gap through which a lower surface of the catalyst film is exposed; and removing the catalyst film through the gap.
A method for growing a graphene, comprising: forming a catalyst film over a substrate; forming a protective film through which an upper surface of the catalyst film is exposed; and growing the graphene on the upper surface of the catalyst film.-38-What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
catalyst film
iron film
Fe
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
iron oxide
FeO / Fe₂O₃
iron chloride
Fe₂Cl₃
ferrocobalt
CoFe
nickel film
Ni
cobalt film
Co
platinum film
Pt
gold film
Au
copper film
Cu
silicon oxide film
SiO₂
titanium film
Ti
| — |
Temperature | 550–700 °C | — |
Thickness | 10–500 nm | — |
METHODS OF FABRICATION OF GRAPHENE NANORIBBONS
iron oxide
FeO / Fe₂O₃
iron chloride
Fe₂Cl₃
ferrocobalt
CoFe
nickel film
Ni
cobalt film
Co
platinum film
Pt
gold film
Au
copper film
Cu
silicon oxide film
SiO₂
titanium film
Ti
| — |
Temperature | 550–700 °C | — |
Thickness | 10–500 nm | — |
METHODS OF FABRICATION OF GRAPHENE NANORIBBONS
iron oxide
FeO / Fe₂O₃
iron chloride
Fe₂Cl₃
ferrocobalt
CoFe
nickel film
Ni
cobalt film
Co
platinum film
Pt
gold film
Au
copper film
Cu
silicon oxide film
SiO₂
titanium film
Ti
| — |
Temperature | 550–700 °C | — |
Thickness | 10–500 nm | — |
METHODS OF FABRICATION OF GRAPHENE NANORIBBONS
iron oxide
FeO / Fe₂O₃
iron chloride
Fe₂Cl₃
ferrocobalt
CoFe
nickel film
Ni
cobalt film
Co
platinum film
Pt
gold film
Au
copper film
Cu
silicon oxide film
SiO₂
titanium film
Ti
| — |
Temperature | 550–700 °C | — |
Thickness | 10–500 nm | — |