Patent
US 9,660,036GRAPHENE LAYER, METHOD OF FORMING THE SAME, DEVICE INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE DEVICE
Hyowon KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,660,036Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 E are perspective views illustrating a method of forming a graphene layer, according to an exemplary embodiment; [0054]
FIGS. 2A through 2D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0055]
FIGS. 3A through 3D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0056]
FIGS. 4A through 4F are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0057]
FIGS. 5A through 5F are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0058]
FIGS. 6A through 6D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0059]
FIGS. 7A through 7D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0060]
FIGS. 8A through 8 C are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0061]
FIG. 9 is a view illustrating a structure of a graphene layer according to an exemplary embodiment; [0062]
FIG. 10 is a view illustrating a structure of a graphene layer according to another exemplary embodiment; [0063]
FIG. 11 illustrates X-ray photoelectron spectroscopy (XPS) images for a graphene layer having a P-N junction, formed by a method according to a comparative …
FIG. 12 is a diagram illustrating a graphene layer according to an exemplary embodiment and a structure of an edge portion thereof; [0065]
FIG. 13 is a diagram illustrating a structure of an edge portion of a graphene layer according to a comparative example; [0066]
FIGS. 14A through 14 C are perspective views illustrating a method of manufacturing a graphene-containing device, according to an exemplary embodiment. [0067]
FIGS. 15A through 1 5C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 16A through 1 6C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 17A through 17 C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 18A and 18B are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment; …
FIG. 19 is a perspective view illustrating a graphene layer according to another exemplary embodiment; [0072]
FIG. 20 is a diagram illustrating a scanning tunneling microscopy (STM) image of a graphene layer formed according to an exemplary embodiment; [0073]
FIG. 21 illustrates STM images of an N-type graphene formed according to an exemplary embodiment; and [0074]
FIGS. 22 through 26 are diagrams showing chemical structures of various source gases that may be used for forming graphenes according to the 8 exemplary …
FIG. 23 shows the chemical structure of C 6 H 6,
FIG. 24 shows the chemical structure of C 2 H 4,
FIG. 25 shows the chemical structure of C 2 H 2, and
FIG. 26 shows the chemical structure of C 6 H 15 B. Materials having chemical structures shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of forming a graphene layer, the method comprising: forming a first graphene on a first region of an underlayer at a first temperature using a first source gas, the first graphene having an exposed lateral side; and forming a second graphene on a second region adjacent to the first region of the underlayer at a second temperature using a second source gas after the forming of the first graphene, the second graphene being joined to the exposed lateral side of the first graphene, wherein one of the first graphene and the second graphene is a P-type graphene, the other one of the first graphene and the second graphene is an N-type graphene, and the first graphene and the second graphene together form a P-N junction, and wherein the P-type graphene is formed at the first temperature, and after the forming of the P-type graphene, the N-type graphene is formed at the second temperature which is lower than the first temperature.
The method of claim 1, wherein the first source gas and the second source gas are the same as each other, and the first temperature and the second temperature are different from each other.
The method of claim 1, wherein the first graphene is a -the P-type graphene resulting from doping effects by the underlayer, and the second graphene is an the N-type graphene resulting from N-type dopants from the second source gas.
The method of claim 1, wherein the underlayer comprises a catalytic metal.
The method of claim 1, wherein the first source gas and the second source gas are different from each other.
The method of claim 1, further comprising forming a third graphene joined to the first graphene or the second graphene, wherein the third graphene is a P-type graphene or an N-type graphene.
The method of claim 1 further comprising forming the underlayer, wherein the forming the underlayer comprises: forming an under-material layer on a substrate; and forming a plurality of underlayers, which are separate from each other, by patterning the under-material layer.
A method of manufacturing a graphene-containing device, the method comprising: forming a graphene layer comprising a P-N junction by using the method of claim 1; and forming a portion of the graphene-containing device, wherein the portion comprises the graphene layer.
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A graphene layer comprising: a P-type graphene; and an N-type graphene joined to a side of the P-type graphene, wherein a depletion region is formed at an interface between the P-type graphene and the N-type graphene and has a width that is less than or equal to 5 nm, wherein an entire edge portion in the whole region of the graphene layer has a defect-free zigzag structure, and wherein in each of the P-type graphene and the N-type graphene, a deviation in doping concentration by region is smaller than about 2.5x10 12/cm 2.
The graphene layer of claim 23, wherein the width of the depletion region is less than or equal to 2 nm.
A graphene-containing device comprising the graphene layer of claim 23.
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A method of forming a graphene layer, the method comprising: forming a first P-type graphene on a first region of an underlayer at a temperature of from about 700 ° C to about 1200 ° C by using a first source gas; and 7 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₁₇₇₂₀ App l n. No.: 14/928,026 forming a first N-type graphene on a second region adjacent to the first region of the underlayer at a temperature of from about 450 ° C to about 550 ° C by using a second source gas, wherein the first P-type graphene and the first N-type graphene are in direct contact with each other at an interface, and forming a depletion region having a width that is less than or equal to 5 nm at the interface between the P-type graphene and the N-type graphene, wherein the method further comprises forming a second P-type graphene or a second N- type graphene joined to the first P-type graphene or the first N-type graphene, and the second P- type graphene or the second N-type graphene is formed at a temperature less than 550°C, in which the temperature less than 550°C is less than the temperature at which the first N-type graphene is formed.
The method of claim 33, wherein the width of the depletion region is less than or equal to 2 nm.
The method of claim 33, wherein the first source gas does not contain nitrogen (N), and the second source gas contains nitrogen (N).
The method of claim 33, wherein the first source gas comprises at least one gas selected from the group consisting of benzene (C 6 H 6), ethylene (C 2 H 4), acetylene (C 2 H 2), and triethylborane (C 6 H 15 B), and the second source gas comprises pyridine (C 5 H 5 N).
The method of claim 33, wherein the first N-type graphene has a crystalline structure formed from carbon (C) atoms, in which some of the carbon (C) atoms are substituted with first atoms, and the first P-type graphene has a crystalline structure formed from only carbon (C) atoms or a structure in which some carbon (C) atoms of the crystalline structure are substituted with second atoms that are different from the first atoms.
The method of claim 33, wherein an entire edge portion of the graphene layer has a defect-free zigzag structure.
The method of claim 33, wherein in the P-type graphene or the N-type graphene, a deviation in doping concentration by region is smaller than about 2.5x10 12/cm 2. 9
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(Cu rr ently Amended) The method of claim 35 c laim 33, wherein the graphene layer has a PNP structure or an NPN structure.
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Layer stacks claimed or described, ordered top of device to substrate.
graphene P-N junction layer
graphene PNP or NPN junction structure
Materials described outside the worked examples.
P-type graphene
N-type graphene
hydrocarbon compound containing nitrogen (N)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 illustrates X-ray photoelectron spectroscopy (XPS) images for a graphene layer having a P-N junction, formed by a method according to a comparative …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
depletion region width at P-N junction interface | ≤ 5 nm | P-type grapheneN-type graphene |
depletion region width at P-N junction interface (narrower variant) |
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US 9,660,036Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 E are perspective views illustrating a method of forming a graphene layer, according to an exemplary embodiment; [0054]
FIGS. 2A through 2D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0055]
FIGS. 3A through 3D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0056]
FIGS. 4A through 4F are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0057]
FIGS. 5A through 5F are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0058]
FIGS. 6A through 6D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0059]
FIGS. 7A through 7D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0060]
FIGS. 8A through 8 C are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0061]
FIG. 9 is a view illustrating a structure of a graphene layer according to an exemplary embodiment; [0062]
FIG. 10 is a view illustrating a structure of a graphene layer according to another exemplary embodiment; [0063]
FIG. 11 illustrates X-ray photoelectron spectroscopy (XPS) images for a graphene layer having a P-N junction, formed by a method according to a comparative …
FIG. 12 is a diagram illustrating a graphene layer according to an exemplary embodiment and a structure of an edge portion thereof; [0065]
FIG. 13 is a diagram illustrating a structure of an edge portion of a graphene layer according to a comparative example; [0066]
FIGS. 14A through 14 C are perspective views illustrating a method of manufacturing a graphene-containing device, according to an exemplary embodiment. [0067]
FIGS. 15A through 1 5C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 16A through 1 6C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 17A through 17 C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 18A and 18B are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment; …
FIG. 19 is a perspective view illustrating a graphene layer according to another exemplary embodiment; [0072]
FIG. 20 is a diagram illustrating a scanning tunneling microscopy (STM) image of a graphene layer formed according to an exemplary embodiment; [0073]
FIG. 21 illustrates STM images of an N-type graphene formed according to an exemplary embodiment; and [0074]
FIGS. 22 through 26 are diagrams showing chemical structures of various source gases that may be used for forming graphenes according to the 8 exemplary …
FIG. 23 shows the chemical structure of C 6 H 6,
FIG. 24 shows the chemical structure of C 2 H 4,
FIG. 25 shows the chemical structure of C 2 H 2, and
FIG. 26 shows the chemical structure of C 6 H 15 B. Materials having chemical structures shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of forming a graphene layer, the method comprising: forming a first graphene on a first region of an underlayer at a first temperature using a first source gas, the first graphene having an exposed lateral side; and forming a second graphene on a second region adjacent to the first region of the underlayer at a second temperature using a second source gas after the forming of the first graphene, the second graphene being joined to the exposed lateral side of the first graphene, wherein one of the first graphene and the second graphene is a P-type graphene, the other one of the first graphene and the second graphene is an N-type graphene, and the first graphene and the second graphene together form a P-N junction, and wherein the P-type graphene is formed at the first temperature, and after the forming of the P-type graphene, the N-type graphene is formed at the second temperature which is lower than the first temperature.
The method of claim 1, wherein the first source gas and the second source gas are the same as each other, and the first temperature and the second temperature are different from each other.
The method of claim 1, wherein the first graphene is a -the P-type graphene resulting from doping effects by the underlayer, and the second graphene is an the N-type graphene resulting from N-type dopants from the second source gas.
The method of claim 1, wherein the underlayer comprises a catalytic metal.
The method of claim 1, wherein the first source gas and the second source gas are different from each other.
The method of claim 1, further comprising forming a third graphene joined to the first graphene or the second graphene, wherein the third graphene is a P-type graphene or an N-type graphene.
The method of claim 1 further comprising forming the underlayer, wherein the forming the underlayer comprises: forming an under-material layer on a substrate; and forming a plurality of underlayers, which are separate from each other, by patterning the under-material layer.
A method of manufacturing a graphene-containing device, the method comprising: forming a graphene layer comprising a P-N junction by using the method of claim 1; and forming a portion of the graphene-containing device, wherein the portion comprises the graphene layer.
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A graphene layer comprising: a P-type graphene; and an N-type graphene joined to a side of the P-type graphene, wherein a depletion region is formed at an interface between the P-type graphene and the N-type graphene and has a width that is less than or equal to 5 nm, wherein an entire edge portion in the whole region of the graphene layer has a defect-free zigzag structure, and wherein in each of the P-type graphene and the N-type graphene, a deviation in doping concentration by region is smaller than about 2.5x10 12/cm 2.
The graphene layer of claim 23, wherein the width of the depletion region is less than or equal to 2 nm.
A graphene-containing device comprising the graphene layer of claim 23.
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A method of forming a graphene layer, the method comprising: forming a first P-type graphene on a first region of an underlayer at a temperature of from about 700 ° C to about 1200 ° C by using a first source gas; and 7 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₁₇₇₂₀ App l n. No.: 14/928,026 forming a first N-type graphene on a second region adjacent to the first region of the underlayer at a temperature of from about 450 ° C to about 550 ° C by using a second source gas, wherein the first P-type graphene and the first N-type graphene are in direct contact with each other at an interface, and forming a depletion region having a width that is less than or equal to 5 nm at the interface between the P-type graphene and the N-type graphene, wherein the method further comprises forming a second P-type graphene or a second N- type graphene joined to the first P-type graphene or the first N-type graphene, and the second P- type graphene or the second N-type graphene is formed at a temperature less than 550°C, in which the temperature less than 550°C is less than the temperature at which the first N-type graphene is formed.
The method of claim 33, wherein the width of the depletion region is less than or equal to 2 nm.
The method of claim 33, wherein the first source gas does not contain nitrogen (N), and the second source gas contains nitrogen (N).
The method of claim 33, wherein the first source gas comprises at least one gas selected from the group consisting of benzene (C 6 H 6), ethylene (C 2 H 4), acetylene (C 2 H 2), and triethylborane (C 6 H 15 B), and the second source gas comprises pyridine (C 5 H 5 N).
The method of claim 33, wherein the first N-type graphene has a crystalline structure formed from carbon (C) atoms, in which some of the carbon (C) atoms are substituted with first atoms, and the first P-type graphene has a crystalline structure formed from only carbon (C) atoms or a structure in which some carbon (C) atoms of the crystalline structure are substituted with second atoms that are different from the first atoms.
The method of claim 33, wherein an entire edge portion of the graphene layer has a defect-free zigzag structure.
The method of claim 33, wherein in the P-type graphene or the N-type graphene, a deviation in doping concentration by region is smaller than about 2.5x10 12/cm 2. 9
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(Cu rr ently Amended) The method of claim 35 c laim 33, wherein the graphene layer has a PNP structure or an NPN structure.
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. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene P-N junction layer
graphene PNP or NPN junction structure
Materials described outside the worked examples.
P-type graphene
N-type graphene
hydrocarbon compound containing nitrogen (N)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 illustrates X-ray photoelectron spectroscopy (XPS) images for a graphene layer having a P-N junction, formed by a method according to a comparative …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
depletion region width at P-N junction interface | ≤ 5 nm | P-type grapheneN-type graphene |
depletion region width at P-N junction interface (narrower variant) |
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US 9,660,036Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 E are perspective views illustrating a method of forming a graphene layer, according to an exemplary embodiment; [0054]
FIGS. 2A through 2D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0055]
FIGS. 3A through 3D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0056]
FIGS. 4A through 4F are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0057]
FIGS. 5A through 5F are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0058]
FIGS. 6A through 6D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0059]
FIGS. 7A through 7D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0060]
FIGS. 8A through 8 C are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0061]
FIG. 9 is a view illustrating a structure of a graphene layer according to an exemplary embodiment; [0062]
FIG. 10 is a view illustrating a structure of a graphene layer according to another exemplary embodiment; [0063]
FIG. 11 illustrates X-ray photoelectron spectroscopy (XPS) images for a graphene layer having a P-N junction, formed by a method according to a comparative …
FIG. 12 is a diagram illustrating a graphene layer according to an exemplary embodiment and a structure of an edge portion thereof; [0065]
FIG. 13 is a diagram illustrating a structure of an edge portion of a graphene layer according to a comparative example; [0066]
FIGS. 14A through 14 C are perspective views illustrating a method of manufacturing a graphene-containing device, according to an exemplary embodiment. [0067]
FIGS. 15A through 1 5C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 16A through 1 6C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 17A through 17 C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 18A and 18B are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment; …
FIG. 19 is a perspective view illustrating a graphene layer according to another exemplary embodiment; [0072]
FIG. 20 is a diagram illustrating a scanning tunneling microscopy (STM) image of a graphene layer formed according to an exemplary embodiment; [0073]
FIG. 21 illustrates STM images of an N-type graphene formed according to an exemplary embodiment; and [0074]
FIGS. 22 through 26 are diagrams showing chemical structures of various source gases that may be used for forming graphenes according to the 8 exemplary …
FIG. 23 shows the chemical structure of C 6 H 6,
FIG. 24 shows the chemical structure of C 2 H 4,
FIG. 25 shows the chemical structure of C 2 H 2, and
FIG. 26 shows the chemical structure of C 6 H 15 B. Materials having chemical structures shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of forming a graphene layer, the method comprising: forming a first graphene on a first region of an underlayer at a first temperature using a first source gas, the first graphene having an exposed lateral side; and forming a second graphene on a second region adjacent to the first region of the underlayer at a second temperature using a second source gas after the forming of the first graphene, the second graphene being joined to the exposed lateral side of the first graphene, wherein one of the first graphene and the second graphene is a P-type graphene, the other one of the first graphene and the second graphene is an N-type graphene, and the first graphene and the second graphene together form a P-N junction, and wherein the P-type graphene is formed at the first temperature, and after the forming of the P-type graphene, the N-type graphene is formed at the second temperature which is lower than the first temperature.
The method of claim 1, wherein the first source gas and the second source gas are the same as each other, and the first temperature and the second temperature are different from each other.
The method of claim 1, wherein the first graphene is a -the P-type graphene resulting from doping effects by the underlayer, and the second graphene is an the N-type graphene resulting from N-type dopants from the second source gas.
The method of claim 1, wherein the underlayer comprises a catalytic metal.
The method of claim 1, wherein the first source gas and the second source gas are different from each other.
The method of claim 1, further comprising forming a third graphene joined to the first graphene or the second graphene, wherein the third graphene is a P-type graphene or an N-type graphene.
The method of claim 1 further comprising forming the underlayer, wherein the forming the underlayer comprises: forming an under-material layer on a substrate; and forming a plurality of underlayers, which are separate from each other, by patterning the under-material layer.
A method of manufacturing a graphene-containing device, the method comprising: forming a graphene layer comprising a P-N junction by using the method of claim 1; and forming a portion of the graphene-containing device, wherein the portion comprises the graphene layer.
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A graphene layer comprising: a P-type graphene; and an N-type graphene joined to a side of the P-type graphene, wherein a depletion region is formed at an interface between the P-type graphene and the N-type graphene and has a width that is less than or equal to 5 nm, wherein an entire edge portion in the whole region of the graphene layer has a defect-free zigzag structure, and wherein in each of the P-type graphene and the N-type graphene, a deviation in doping concentration by region is smaller than about 2.5x10 12/cm 2.
The graphene layer of claim 23, wherein the width of the depletion region is less than or equal to 2 nm.
A graphene-containing device comprising the graphene layer of claim 23.
. canceled
. canceled
. canceled
A method of forming a graphene layer, the method comprising: forming a first P-type graphene on a first region of an underlayer at a temperature of from about 700 ° C to about 1200 ° C by using a first source gas; and 7 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₁₇₇₂₀ App l n. No.: 14/928,026 forming a first N-type graphene on a second region adjacent to the first region of the underlayer at a temperature of from about 450 ° C to about 550 ° C by using a second source gas, wherein the first P-type graphene and the first N-type graphene are in direct contact with each other at an interface, and forming a depletion region having a width that is less than or equal to 5 nm at the interface between the P-type graphene and the N-type graphene, wherein the method further comprises forming a second P-type graphene or a second N- type graphene joined to the first P-type graphene or the first N-type graphene, and the second P- type graphene or the second N-type graphene is formed at a temperature less than 550°C, in which the temperature less than 550°C is less than the temperature at which the first N-type graphene is formed.
The method of claim 33, wherein the width of the depletion region is less than or equal to 2 nm.
The method of claim 33, wherein the first source gas does not contain nitrogen (N), and the second source gas contains nitrogen (N).
The method of claim 33, wherein the first source gas comprises at least one gas selected from the group consisting of benzene (C 6 H 6), ethylene (C 2 H 4), acetylene (C 2 H 2), and triethylborane (C 6 H 15 B), and the second source gas comprises pyridine (C 5 H 5 N).
The method of claim 33, wherein the first N-type graphene has a crystalline structure formed from carbon (C) atoms, in which some of the carbon (C) atoms are substituted with first atoms, and the first P-type graphene has a crystalline structure formed from only carbon (C) atoms or a structure in which some carbon (C) atoms of the crystalline structure are substituted with second atoms that are different from the first atoms.
The method of claim 33, wherein an entire edge portion of the graphene layer has a defect-free zigzag structure.
The method of claim 33, wherein in the P-type graphene or the N-type graphene, a deviation in doping concentration by region is smaller than about 2.5x10 12/cm 2. 9
. canceled
(Cu rr ently Amended) The method of claim 35 c laim 33, wherein the graphene layer has a PNP structure or an NPN structure.
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene P-N junction layer
graphene PNP or NPN junction structure
Materials described outside the worked examples.
P-type graphene
N-type graphene
hydrocarbon compound containing nitrogen (N)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 illustrates X-ray photoelectron spectroscopy (XPS) images for a graphene layer having a P-N junction, formed by a method according to a comparative …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
depletion region width at P-N junction interface | ≤ 5 nm | P-type grapheneN-type graphene |
depletion region width at P-N junction interface (narrower variant) |
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US 9,660,036Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 E are perspective views illustrating a method of forming a graphene layer, according to an exemplary embodiment; [0054]
FIGS. 2A through 2D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0055]
FIGS. 3A through 3D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0056]
FIGS. 4A through 4F are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0057]
FIGS. 5A through 5F are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0058]
FIGS. 6A through 6D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0059]
FIGS. 7A through 7D are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0060]
FIGS. 8A through 8 C are perspective views illustrating a method of forming a graphene layer, according to another exemplary embodiment; [0061]
FIG. 9 is a view illustrating a structure of a graphene layer according to an exemplary embodiment; [0062]
FIG. 10 is a view illustrating a structure of a graphene layer according to another exemplary embodiment; [0063]
FIG. 11 illustrates X-ray photoelectron spectroscopy (XPS) images for a graphene layer having a P-N junction, formed by a method according to a comparative …
FIG. 12 is a diagram illustrating a graphene layer according to an exemplary embodiment and a structure of an edge portion thereof; [0065]
FIG. 13 is a diagram illustrating a structure of an edge portion of a graphene layer according to a comparative example; [0066]
FIGS. 14A through 14 C are perspective views illustrating a method of manufacturing a graphene-containing device, according to an exemplary embodiment. [0067]
FIGS. 15A through 1 5C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 16A through 1 6C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 17A through 17 C are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary …
FIGS. 18A and 18B are cross-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment; …
FIG. 19 is a perspective view illustrating a graphene layer according to another exemplary embodiment; [0072]
FIG. 20 is a diagram illustrating a scanning tunneling microscopy (STM) image of a graphene layer formed according to an exemplary embodiment; [0073]
FIG. 21 illustrates STM images of an N-type graphene formed according to an exemplary embodiment; and [0074]
FIGS. 22 through 26 are diagrams showing chemical structures of various source gases that may be used for forming graphenes according to the 8 exemplary …
FIG. 23 shows the chemical structure of C 6 H 6,
FIG. 24 shows the chemical structure of C 2 H 4,
FIG. 25 shows the chemical structure of C 2 H 2, and
FIG. 26 shows the chemical structure of C 6 H 15 B. Materials having chemical structures shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of forming a graphene layer, the method comprising: forming a first graphene on a first region of an underlayer at a first temperature using a first source gas, the first graphene having an exposed lateral side; and forming a second graphene on a second region adjacent to the first region of the underlayer at a second temperature using a second source gas after the forming of the first graphene, the second graphene being joined to the exposed lateral side of the first graphene, wherein one of the first graphene and the second graphene is a P-type graphene, the other one of the first graphene and the second graphene is an N-type graphene, and the first graphene and the second graphene together form a P-N junction, and wherein the P-type graphene is formed at the first temperature, and after the forming of the P-type graphene, the N-type graphene is formed at the second temperature which is lower than the first temperature.
The method of claim 1, wherein the first source gas and the second source gas are the same as each other, and the first temperature and the second temperature are different from each other.
The method of claim 1, wherein the first graphene is a -the P-type graphene resulting from doping effects by the underlayer, and the second graphene is an the N-type graphene resulting from N-type dopants from the second source gas.
The method of claim 1, wherein the underlayer comprises a catalytic metal.
The method of claim 1, wherein the first source gas and the second source gas are different from each other.
The method of claim 1, further comprising forming a third graphene joined to the first graphene or the second graphene, wherein the third graphene is a P-type graphene or an N-type graphene.
The method of claim 1 further comprising forming the underlayer, wherein the forming the underlayer comprises: forming an under-material layer on a substrate; and forming a plurality of underlayers, which are separate from each other, by patterning the under-material layer.
A method of manufacturing a graphene-containing device, the method comprising: forming a graphene layer comprising a P-N junction by using the method of claim 1; and forming a portion of the graphene-containing device, wherein the portion comprises the graphene layer.
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A graphene layer comprising: a P-type graphene; and an N-type graphene joined to a side of the P-type graphene, wherein a depletion region is formed at an interface between the P-type graphene and the N-type graphene and has a width that is less than or equal to 5 nm, wherein an entire edge portion in the whole region of the graphene layer has a defect-free zigzag structure, and wherein in each of the P-type graphene and the N-type graphene, a deviation in doping concentration by region is smaller than about 2.5x10 12/cm 2.
The graphene layer of claim 23, wherein the width of the depletion region is less than or equal to 2 nm.
A graphene-containing device comprising the graphene layer of claim 23.
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A method of forming a graphene layer, the method comprising: forming a first P-type graphene on a first region of an underlayer at a temperature of from about 700 ° C to about 1200 ° C by using a first source gas; and 7 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₁₇₇₂₀ App l n. No.: 14/928,026 forming a first N-type graphene on a second region adjacent to the first region of the underlayer at a temperature of from about 450 ° C to about 550 ° C by using a second source gas, wherein the first P-type graphene and the first N-type graphene are in direct contact with each other at an interface, and forming a depletion region having a width that is less than or equal to 5 nm at the interface between the P-type graphene and the N-type graphene, wherein the method further comprises forming a second P-type graphene or a second N- type graphene joined to the first P-type graphene or the first N-type graphene, and the second P- type graphene or the second N-type graphene is formed at a temperature less than 550°C, in which the temperature less than 550°C is less than the temperature at which the first N-type graphene is formed.
The method of claim 33, wherein the width of the depletion region is less than or equal to 2 nm.
The method of claim 33, wherein the first source gas does not contain nitrogen (N), and the second source gas contains nitrogen (N).
The method of claim 33, wherein the first source gas comprises at least one gas selected from the group consisting of benzene (C 6 H 6), ethylene (C 2 H 4), acetylene (C 2 H 2), and triethylborane (C 6 H 15 B), and the second source gas comprises pyridine (C 5 H 5 N).
The method of claim 33, wherein the first N-type graphene has a crystalline structure formed from carbon (C) atoms, in which some of the carbon (C) atoms are substituted with first atoms, and the first P-type graphene has a crystalline structure formed from only carbon (C) atoms or a structure in which some carbon (C) atoms of the crystalline structure are substituted with second atoms that are different from the first atoms.
The method of claim 33, wherein an entire edge portion of the graphene layer has a defect-free zigzag structure.
The method of claim 33, wherein in the P-type graphene or the N-type graphene, a deviation in doping concentration by region is smaller than about 2.5x10 12/cm 2. 9
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(Cu rr ently Amended) The method of claim 35 c laim 33, wherein the graphene layer has a PNP structure or an NPN structure.
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Layer stacks claimed or described, ordered top of device to substrate.
graphene P-N junction layer
graphene PNP or NPN junction structure
Materials described outside the worked examples.
P-type graphene
N-type graphene
hydrocarbon compound containing nitrogen (N)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 illustrates X-ray photoelectron spectroscopy (XPS) images for a graphene layer having a P-N junction, formed by a method according to a comparative …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
depletion region width at P-N junction interface | ≤ 5 nm | P-type grapheneN-type graphene |
depletion region width at P-N junction interface (narrower variant) |
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