Patent
US 8,722,442NITROGEN-DOPED TRANSPARENT GRAPHENE FILM AND MANUFACTURING METHOD THEREOF
Sang Ouk Kim
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,722,442Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an explanatory drawing showing a method for manufacturing a transparent graphene film of which conductivity is enhanced through chemical and thermal …
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a transparent graphene film doped with nitrogen by chemical and thermal reduction of a graphene oxide thin film so that conductivity is enhanced and work f u nction is controllable, the method comprising the following steps of: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film.
The method of claim 1, wherein the substrate is selected from the group consisting of glass, quartz, Si/Si O2, polyethylene terephthalate (PET), polycarbonate (PC), polyimide (P I), polyethylene naphthalate (PEN), and polystyrene (PS).
The method of claim 1, wherein the step of (a) forming a graphene oxide thin film is being performed by spin coating or spray coating.
The method of claim 1, wherein the reducing agent is selected from the group consisting of hydrazine (N 2H 4), potassium hydroxide (KOH), sodium hydroxide (NaOH), sodium bisulfate (NaHSO₄), sodium sulfite (Na₂SO₃), thionyl chloride (SOC l2), and sulf u r dioxide (SO₂).
The method of claim 1, wherein when the reducing agent is a reducing agent including Application No. 13/298,166 Page 3 nitrogen (N), chemical reduction and nitrogen doping is achieved at the same time.
The method of claim 1, wherein the step (b) is performed by exposing the graphene oxide thin film to vapor of the reducing agent formed by heating a reducing agent solution.
The method of claim 1, wherein the thermal reduction and nitrogen doping of the step (c) are performed in chemical vapor deposition equipment.
A transparent graphene film manufactured by a method, the method comprising: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film, wherein the transparent graphene film has a controllable work function conduc tiv it y in ane from 1,900 S/cm to 5,100 Scm
A device comprising a transparent graphene film manufactured by a method, the method comprising: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film; wherein the transparent graphene film has a controllable work function.
The device of claim 13, wherein the device is selected from the group consisting of liquid crystal display devices, electronic paper display devices, and organic electroluminescent devices.
The device of claim 13 wherein the device is a solar cell.
The device of claim 13 wherein the device is a display.
An organic electroluminescent device comprising: an anode; a hole transport layer; a light-emitting layer; an electron transport layer; and a cathode, wherein the anode comprises a transparent graphene film having a controllable work function cond uc ti vi t y in a range fro 1,900 S/cm
The organic electroluminescent device of claim 15, further comprising: an electron injection layer and a hole injection layer.
Layer stacks claimed or described, ordered top of device to substrate.
transparent graphene film device (display/solar cell)
organic electroluminescent device
Materials described outside the worked examples.
graphene oxide aqueous solution
hydrogen gas
H₂
ammonia gas
NH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of transparent graphene film at ~10 nm thickness | 4900–5100 S/cm | nitrogen-doped transparent graphene film |
transmittance of transparent graphene film at 550 nm | ≥ 80 % |
Related documents with shared materials, methods, properties, or citations.
MULTI-DOPED GRAPHENE AND METHOD FOR PREPARING THE SAME
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
Patent
Atlas literature
Patent
US 8,722,442Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an explanatory drawing showing a method for manufacturing a transparent graphene film of which conductivity is enhanced through chemical and thermal …
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a transparent graphene film doped with nitrogen by chemical and thermal reduction of a graphene oxide thin film so that conductivity is enhanced and work f u nction is controllable, the method comprising the following steps of: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film.
The method of claim 1, wherein the substrate is selected from the group consisting of glass, quartz, Si/Si O2, polyethylene terephthalate (PET), polycarbonate (PC), polyimide (P I), polyethylene naphthalate (PEN), and polystyrene (PS).
The method of claim 1, wherein the step of (a) forming a graphene oxide thin film is being performed by spin coating or spray coating.
The method of claim 1, wherein the reducing agent is selected from the group consisting of hydrazine (N 2H 4), potassium hydroxide (KOH), sodium hydroxide (NaOH), sodium bisulfate (NaHSO₄), sodium sulfite (Na₂SO₃), thionyl chloride (SOC l2), and sulf u r dioxide (SO₂).
The method of claim 1, wherein when the reducing agent is a reducing agent including Application No. 13/298,166 Page 3 nitrogen (N), chemical reduction and nitrogen doping is achieved at the same time.
The method of claim 1, wherein the step (b) is performed by exposing the graphene oxide thin film to vapor of the reducing agent formed by heating a reducing agent solution.
The method of claim 1, wherein the thermal reduction and nitrogen doping of the step (c) are performed in chemical vapor deposition equipment.
A transparent graphene film manufactured by a method, the method comprising: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film, wherein the transparent graphene film has a controllable work function conduc tiv it y in ane from 1,900 S/cm to 5,100 Scm
A device comprising a transparent graphene film manufactured by a method, the method comprising: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film; wherein the transparent graphene film has a controllable work function.
The device of claim 13, wherein the device is selected from the group consisting of liquid crystal display devices, electronic paper display devices, and organic electroluminescent devices.
The device of claim 13 wherein the device is a solar cell.
The device of claim 13 wherein the device is a display.
An organic electroluminescent device comprising: an anode; a hole transport layer; a light-emitting layer; an electron transport layer; and a cathode, wherein the anode comprises a transparent graphene film having a controllable work function cond uc ti vi t y in a range fro 1,900 S/cm
The organic electroluminescent device of claim 15, further comprising: an electron injection layer and a hole injection layer.
Layer stacks claimed or described, ordered top of device to substrate.
transparent graphene film device (display/solar cell)
organic electroluminescent device
Materials described outside the worked examples.
graphene oxide aqueous solution
hydrogen gas
H₂
ammonia gas
NH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of transparent graphene film at ~10 nm thickness | 4900–5100 S/cm | nitrogen-doped transparent graphene film |
transmittance of transparent graphene film at 550 nm | ≥ 80 % |
Related documents with shared materials, methods, properties, or citations.
MULTI-DOPED GRAPHENE AND METHOD FOR PREPARING THE SAME
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
Patent
Atlas literature
Patent
US 8,722,442Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an explanatory drawing showing a method for manufacturing a transparent graphene film of which conductivity is enhanced through chemical and thermal …
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a transparent graphene film doped with nitrogen by chemical and thermal reduction of a graphene oxide thin film so that conductivity is enhanced and work f u nction is controllable, the method comprising the following steps of: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film.
The method of claim 1, wherein the substrate is selected from the group consisting of glass, quartz, Si/Si O2, polyethylene terephthalate (PET), polycarbonate (PC), polyimide (P I), polyethylene naphthalate (PEN), and polystyrene (PS).
The method of claim 1, wherein the step of (a) forming a graphene oxide thin film is being performed by spin coating or spray coating.
The method of claim 1, wherein the reducing agent is selected from the group consisting of hydrazine (N 2H 4), potassium hydroxide (KOH), sodium hydroxide (NaOH), sodium bisulfate (NaHSO₄), sodium sulfite (Na₂SO₃), thionyl chloride (SOC l2), and sulf u r dioxide (SO₂).
The method of claim 1, wherein when the reducing agent is a reducing agent including Application No. 13/298,166 Page 3 nitrogen (N), chemical reduction and nitrogen doping is achieved at the same time.
The method of claim 1, wherein the step (b) is performed by exposing the graphene oxide thin film to vapor of the reducing agent formed by heating a reducing agent solution.
The method of claim 1, wherein the thermal reduction and nitrogen doping of the step (c) are performed in chemical vapor deposition equipment.
A transparent graphene film manufactured by a method, the method comprising: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film, wherein the transparent graphene film has a controllable work function conduc tiv it y in ane from 1,900 S/cm to 5,100 Scm
A device comprising a transparent graphene film manufactured by a method, the method comprising: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film; wherein the transparent graphene film has a controllable work function.
The device of claim 13, wherein the device is selected from the group consisting of liquid crystal display devices, electronic paper display devices, and organic electroluminescent devices.
The device of claim 13 wherein the device is a solar cell.
The device of claim 13 wherein the device is a display.
An organic electroluminescent device comprising: an anode; a hole transport layer; a light-emitting layer; an electron transport layer; and a cathode, wherein the anode comprises a transparent graphene film having a controllable work function cond uc ti vi t y in a range fro 1,900 S/cm
The organic electroluminescent device of claim 15, further comprising: an electron injection layer and a hole injection layer.
Layer stacks claimed or described, ordered top of device to substrate.
transparent graphene film device (display/solar cell)
organic electroluminescent device
Materials described outside the worked examples.
graphene oxide aqueous solution
hydrogen gas
H₂
ammonia gas
NH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of transparent graphene film at ~10 nm thickness | 4900–5100 S/cm | nitrogen-doped transparent graphene film |
transmittance of transparent graphene film at 550 nm | ≥ 80 % |
Related documents with shared materials, methods, properties, or citations.
MULTI-DOPED GRAPHENE AND METHOD FOR PREPARING THE SAME
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
Patent
Atlas literature
Patent
US 8,722,442Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an explanatory drawing showing a method for manufacturing a transparent graphene film of which conductivity is enhanced through chemical and thermal …
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a transparent graphene film doped with nitrogen by chemical and thermal reduction of a graphene oxide thin film so that conductivity is enhanced and work f u nction is controllable, the method comprising the following steps of: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film.
The method of claim 1, wherein the substrate is selected from the group consisting of glass, quartz, Si/Si O2, polyethylene terephthalate (PET), polycarbonate (PC), polyimide (P I), polyethylene naphthalate (PEN), and polystyrene (PS).
The method of claim 1, wherein the step of (a) forming a graphene oxide thin film is being performed by spin coating or spray coating.
The method of claim 1, wherein the reducing agent is selected from the group consisting of hydrazine (N 2H 4), potassium hydroxide (KOH), sodium hydroxide (NaOH), sodium bisulfate (NaHSO₄), sodium sulfite (Na₂SO₃), thionyl chloride (SOC l2), and sulf u r dioxide (SO₂).
The method of claim 1, wherein when the reducing agent is a reducing agent including Application No. 13/298,166 Page 3 nitrogen (N), chemical reduction and nitrogen doping is achieved at the same time.
The method of claim 1, wherein the step (b) is performed by exposing the graphene oxide thin film to vapor of the reducing agent formed by heating a reducing agent solution.
The method of claim 1, wherein the thermal reduction and nitrogen doping of the step (c) are performed in chemical vapor deposition equipment.
A transparent graphene film manufactured by a method, the method comprising: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film, wherein the transparent graphene film has a controllable work function conduc tiv it y in ane from 1,900 S/cm to 5,100 Scm
A device comprising a transparent graphene film manufactured by a method, the method comprising: (a) forming a graphene oxide thin film on a substrate; (b) performing primary chemical reduction on the graphene oxide thin film formed on the substrate using a reducing agent; and (c) manufacturing a transparent graphene film by performing secondary thermal reduction and nitrogen doping on the primarily chemically reduced graphene oxide thin film; wherein the transparent graphene film has a controllable work function.
The device of claim 13, wherein the device is selected from the group consisting of liquid crystal display devices, electronic paper display devices, and organic electroluminescent devices.
The device of claim 13 wherein the device is a solar cell.
The device of claim 13 wherein the device is a display.
An organic electroluminescent device comprising: an anode; a hole transport layer; a light-emitting layer; an electron transport layer; and a cathode, wherein the anode comprises a transparent graphene film having a controllable work function cond uc ti vi t y in a range fro 1,900 S/cm
The organic electroluminescent device of claim 15, further comprising: an electron injection layer and a hole injection layer.
Layer stacks claimed or described, ordered top of device to substrate.
transparent graphene film device (display/solar cell)
organic electroluminescent device
Materials described outside the worked examples.
graphene oxide aqueous solution
hydrogen gas
H₂
ammonia gas
NH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of transparent graphene film at ~10 nm thickness | 4900–5100 S/cm | nitrogen-doped transparent graphene film |
transmittance of transparent graphene film at 550 nm | ≥ 80 % |
Related documents with shared materials, methods, properties, or citations.
MULTI-DOPED GRAPHENE AND METHOD FOR PREPARING THE SAME
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
ethanol
C₂H₅OH
hydrazine
N₂H₄
potassium hydroxide
KOH
sodium hydroxide
NaOH
sodium bisulfate
NaHSO₄
sodium sulfite
Na₂SO₃
thionyl chloride
SOCl₂
sulfur dioxide
SO₂
nitrogen-doped transparent graphene film
graphene oxide thin film
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
nitrogen-doped transparent graphene film |
Thickness | 5–10 nm | — |
Duration | 30–60 minutes | — |
Duration | 50–70 minutes | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 10 nm | — |
ethanol
C₂H₅OH
hydrazine
N₂H₄
potassium hydroxide
KOH
sodium hydroxide
NaOH
sodium bisulfate
NaHSO₄
sodium sulfite
Na₂SO₃
thionyl chloride
SOCl₂
sulfur dioxide
SO₂
nitrogen-doped transparent graphene film
graphene oxide thin film
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
nitrogen-doped transparent graphene film |
Thickness | 5–10 nm | — |
Duration | 30–60 minutes | — |
Duration | 50–70 minutes | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 10 nm | — |
ethanol
C₂H₅OH
hydrazine
N₂H₄
potassium hydroxide
KOH
sodium hydroxide
NaOH
sodium bisulfate
NaHSO₄
sodium sulfite
Na₂SO₃
thionyl chloride
SOCl₂
sulfur dioxide
SO₂
nitrogen-doped transparent graphene film
graphene oxide thin film
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
nitrogen-doped transparent graphene film |
Thickness | 5–10 nm | — |
Duration | 30–60 minutes | — |
Duration | 50–70 minutes | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 10 nm | — |
ethanol
C₂H₅OH
hydrazine
N₂H₄
potassium hydroxide
KOH
sodium hydroxide
NaOH
sodium bisulfate
NaHSO₄
sodium sulfite
Na₂SO₃
thionyl chloride
SOCl₂
sulfur dioxide
SO₂
nitrogen-doped transparent graphene film
graphene oxide thin film
FIG. 2 is a graph showing the result of measurement on electrical 20 conductivity of the primarily chemically reduced and nitrogen-doped graphene thin film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 3 is a graph showing the measurement result of XPS (X-ray photoelectron spectroscopy) which confirms nitrogen doping of a transparent graphene film …
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 4 is a graph showing the measurement of sheet resistance of a transparent graphene film according to one embodiment of the present disclosure.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
FIG. 5 is a graph showing the measurement of sheet resistance of a transparent graphene film wherein chemical reduction was not performed.
nitrogen-doped transparent graphene film |
Thickness | 5–10 nm | — |
Duration | 30–60 minutes | — |
Duration | 50–70 minutes | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 10 nm | — |