Patent
US 11,024,705OF I NVENTION
Shinya KAWAMOTO
US
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Patent
Atlas literature
Patent
US 11,024,705Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semi-insulating gallium arsenide crystal substrate having a main surface with a plane orientation of (100) and a diameter of 2R mm,--.. the diameter of 2R mm of the main surface being 150 mm or more, the main surface being a circle in a plan view of the semi-insulating gallium arsenide crystal substrate, and a center of the circle being a center of the main surface, the main surface having a first measurement area, a second measurement area, and a third measurement area for measuring specific resistance of the main surface, each of the measurement areas being circular in shape, a center of the first measurement area corresponding to the center of the main surface, a center of the second measurement area being at a distance of 0.5R mm from the center of the main surface in the [010 1 direction, a center of the third measurement area being at a distance of (R-17) mm from the center of the main surface in the [010 1 direction, each of the first, second, and third measurement areas of the main surface including 101 points at which specific resistance is measured, each point being disposed from the center of the respective measurement area in the [010 1 direction over a range of-5 mm to + 5 mm at 100 m intervals, for each of the first, second, and third measurement areas: (i) an average value of the specific resistance measured at the 101 points is 5 x 10 7 Q- cm or more, and (ii) a coefficient of variation of the specific resistance is 0.50 or less. Currently amended
The semi-insulating gallium arsenide crystal substrate according to claim 1, wherein the coefficient of variation of the specific resistance is 0.10 or less for each of the first, second, and third measurement areas of the main surface. Currently amended
The semi-insulating gallium arsenide crystal substrate according to claim 1, wherein the average value of the specific resistance is 1.0 x 10 8 Q- cm or more for each of the first, second, and third measurement areas of the main surface. New
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
semi-insulating gallium arsenide crystal substrate
Materials described outside the worked examples.
semi-insulating gallium arsenide crystal substrate
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific_resistance_average_minimum | 50000000 | GaAs |
specific_resistance_coefficient_of_variation_maximum | 0.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,024,705Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semi-insulating gallium arsenide crystal substrate having a main surface with a plane orientation of (100) and a diameter of 2R mm,--.. the diameter of 2R mm of the main surface being 150 mm or more, the main surface being a circle in a plan view of the semi-insulating gallium arsenide crystal substrate, and a center of the circle being a center of the main surface, the main surface having a first measurement area, a second measurement area, and a third measurement area for measuring specific resistance of the main surface, each of the measurement areas being circular in shape, a center of the first measurement area corresponding to the center of the main surface, a center of the second measurement area being at a distance of 0.5R mm from the center of the main surface in the [010 1 direction, a center of the third measurement area being at a distance of (R-17) mm from the center of the main surface in the [010 1 direction, each of the first, second, and third measurement areas of the main surface including 101 points at which specific resistance is measured, each point being disposed from the center of the respective measurement area in the [010 1 direction over a range of-5 mm to + 5 mm at 100 m intervals, for each of the first, second, and third measurement areas: (i) an average value of the specific resistance measured at the 101 points is 5 x 10 7 Q- cm or more, and (ii) a coefficient of variation of the specific resistance is 0.50 or less. Currently amended
The semi-insulating gallium arsenide crystal substrate according to claim 1, wherein the coefficient of variation of the specific resistance is 0.10 or less for each of the first, second, and third measurement areas of the main surface. Currently amended
The semi-insulating gallium arsenide crystal substrate according to claim 1, wherein the average value of the specific resistance is 1.0 x 10 8 Q- cm or more for each of the first, second, and third measurement areas of the main surface. New
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
semi-insulating gallium arsenide crystal substrate
Materials described outside the worked examples.
semi-insulating gallium arsenide crystal substrate
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific_resistance_average_minimum | 50000000 | GaAs |
specific_resistance_coefficient_of_variation_maximum | 0.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,024,705Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semi-insulating gallium arsenide crystal substrate having a main surface with a plane orientation of (100) and a diameter of 2R mm,--.. the diameter of 2R mm of the main surface being 150 mm or more, the main surface being a circle in a plan view of the semi-insulating gallium arsenide crystal substrate, and a center of the circle being a center of the main surface, the main surface having a first measurement area, a second measurement area, and a third measurement area for measuring specific resistance of the main surface, each of the measurement areas being circular in shape, a center of the first measurement area corresponding to the center of the main surface, a center of the second measurement area being at a distance of 0.5R mm from the center of the main surface in the [010 1 direction, a center of the third measurement area being at a distance of (R-17) mm from the center of the main surface in the [010 1 direction, each of the first, second, and third measurement areas of the main surface including 101 points at which specific resistance is measured, each point being disposed from the center of the respective measurement area in the [010 1 direction over a range of-5 mm to + 5 mm at 100 m intervals, for each of the first, second, and third measurement areas: (i) an average value of the specific resistance measured at the 101 points is 5 x 10 7 Q- cm or more, and (ii) a coefficient of variation of the specific resistance is 0.50 or less. Currently amended
The semi-insulating gallium arsenide crystal substrate according to claim 1, wherein the coefficient of variation of the specific resistance is 0.10 or less for each of the first, second, and third measurement areas of the main surface. Currently amended
The semi-insulating gallium arsenide crystal substrate according to claim 1, wherein the average value of the specific resistance is 1.0 x 10 8 Q- cm or more for each of the first, second, and third measurement areas of the main surface. New
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
semi-insulating gallium arsenide crystal substrate
Materials described outside the worked examples.
semi-insulating gallium arsenide crystal substrate
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific_resistance_average_minimum | 50000000 | GaAs |
specific_resistance_coefficient_of_variation_maximum | 0.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,024,705Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semi-insulating gallium arsenide crystal substrate having a main surface with a plane orientation of (100) and a diameter of 2R mm,--.. the diameter of 2R mm of the main surface being 150 mm or more, the main surface being a circle in a plan view of the semi-insulating gallium arsenide crystal substrate, and a center of the circle being a center of the main surface, the main surface having a first measurement area, a second measurement area, and a third measurement area for measuring specific resistance of the main surface, each of the measurement areas being circular in shape, a center of the first measurement area corresponding to the center of the main surface, a center of the second measurement area being at a distance of 0.5R mm from the center of the main surface in the [010 1 direction, a center of the third measurement area being at a distance of (R-17) mm from the center of the main surface in the [010 1 direction, each of the first, second, and third measurement areas of the main surface including 101 points at which specific resistance is measured, each point being disposed from the center of the respective measurement area in the [010 1 direction over a range of-5 mm to + 5 mm at 100 m intervals, for each of the first, second, and third measurement areas: (i) an average value of the specific resistance measured at the 101 points is 5 x 10 7 Q- cm or more, and (ii) a coefficient of variation of the specific resistance is 0.50 or less. Currently amended
The semi-insulating gallium arsenide crystal substrate according to claim 1, wherein the coefficient of variation of the specific resistance is 0.10 or less for each of the first, second, and third measurement areas of the main surface. Currently amended
The semi-insulating gallium arsenide crystal substrate according to claim 1, wherein the average value of the specific resistance is 1.0 x 10 8 Q- cm or more for each of the first, second, and third measurement areas of the main surface. New
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
semi-insulating gallium arsenide crystal substrate
Materials described outside the worked examples.
semi-insulating gallium arsenide crystal substrate
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific_resistance_average_minimum | 50000000 | GaAs |
specific_resistance_coefficient_of_variation_maximum | 0.5 |
Related documents with shared materials, methods, properties, or citations.
GaAs |
specific_resistance_coefficient_of_variation_maximum_tighter | 0.1 | GaAs |
specific_resistance_average_minimum_higher | 100000000 | GaAs |
dislocation_density_maximum | 5500 | GaAs |
LTV_maximum | 0.5 | GaAs |
specific_resistance_average_preferred_lower | 75000000 | GaAs |
specific_resistance_average_most_preferred | 100000000 | GaAs |
Gallium Arsenide Cell and Logic Circuit
GaAs |
specific_resistance_coefficient_of_variation_maximum_tighter | 0.1 | GaAs |
specific_resistance_average_minimum_higher | 100000000 | GaAs |
dislocation_density_maximum | 5500 | GaAs |
LTV_maximum | 0.5 | GaAs |
specific_resistance_average_preferred_lower | 75000000 | GaAs |
specific_resistance_average_most_preferred | 100000000 | GaAs |
Gallium Arsenide Cell and Logic Circuit
GaAs |
specific_resistance_coefficient_of_variation_maximum_tighter | 0.1 | GaAs |
specific_resistance_average_minimum_higher | 100000000 | GaAs |
dislocation_density_maximum | 5500 | GaAs |
LTV_maximum | 0.5 | GaAs |
specific_resistance_average_preferred_lower | 75000000 | GaAs |
specific_resistance_average_most_preferred | 100000000 | GaAs |
Gallium Arsenide Cell and Logic Circuit
GaAs |
specific_resistance_coefficient_of_variation_maximum_tighter | 0.1 | GaAs |
specific_resistance_average_minimum_higher | 100000000 | GaAs |
dislocation_density_maximum | 5500 | GaAs |
LTV_maximum | 0.5 | GaAs |
specific_resistance_average_preferred_lower | 75000000 | GaAs |
specific_resistance_average_most_preferred | 100000000 | GaAs |