Patent
Atlas literature
Patent
US 12,660,512 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a quantum Hall effect of the disclosure. A left vertical coordinate in
FIG. 2 is a structural schematic diagram of a low- magnetic-field GaAs Quantum Hall Resistance sample of the disclosure. The reference numerals in
FIG. 3. A resistance between the voltage terminals 302 and 308 is the transverse resistance RH, and a resistance between the 15 voltage terminals 302 and 303 …
FIG. 4 is a schematic flowchart of the preparation method of the low-magnetic-field GaAs Quantum Hall Resistance sample in the disclosure. The preparation method …
FIG. 5 is a physical diagram of the low-magnetic-field GaAs Quantum Hall Resistance sample of the disclosure. In
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A low-magnetic-field gallium arsenide (GaAs) Quan-tum Hall Resistance sample, comprising: a GaAs heterojunction material, wherein the GaAs het-erojunction material has a seven-layer structure includ-ing first to seventh layers sequentially stacked upwards and bonded to a surface of a GaAs substrate; wherein the first layer of the seven-layer structure is a GaAs isolation layer, the second layer of the seven-layer structure is gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) superlattice layer, the third layer of the seven-layer structure is high-purity GaAs layer, the fourth layer of the seven-layer structure is a two-dimensional electron gas layer, the fifth layer of the seven-layer structure is an undoped AlxGa₁-xAs isolation layer, the sixth layer of the seven-layer struc-ture is a Si-doped AlxGa₁-xAs layer, and the seventh layer of the seven-layer structure is a GaAs surface layer, and wherein a thickness of the undoped AlxGa₁-xAs isolation layer is in a range of 10 nanometers (nm) to 30 nm, and x is in a range of 0.28 to 0.32, to match a carrier concentration of the two-dimensional electron gas layer with an expected low magnetic field of a central magnetic field, which is positively related to the carrier concentration of the two-dimensional electron gas layer, of a Quantum Hall Resistance plateau 2, and also to match the carrier concentration of the two-dimen-sional electron gas layer with an expected lower limit of a plateau width, which is positively related to the carrier concentration of the two-dimensional electron gas layer, of the Quantum Hall Resistance plateau 2; and the low magnetic field is in a range of 7 tesla (T) to 8 T, and the plateau width of the Quantum Hall Resis-tance plateau 2 is equal or greater than 0.6 T.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein the thickness of the undoped AlxGa₁-xAs isolation layer is in a range of 15 nm to 20 nm, the central magnetic field of the Quantum Hall Resistance plateau 2 is 7.6 T, and a magnetic field range corresponding to the Quantum Hall Resistance plateau 2 starts from 7.3 T and ends at 7.9 T.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a resistance value reproduced at the central magnetic field of the Quan-tum Hall Resistance plateau 2 is 12906.4037 ohms (Ω), and a relative measurement uncertainty is less than 2×10⁻⁸.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein an impurity concentration of the high-purity GaAs layer is on an order of 1013 per cubic centimeter (1013/cm3), and a thickness of the high-purity GaAs layer is in a range of 380 nm to 420 nm; the two-dimensional electron gas layer is formed at a contact surface between the high-purity GaAs layer and the undoped AlxGa₁-xAs isolation layer, a thickness of the two-dimen-sional electron gas layer is in a range of 9 nm to 11 nm, the carrier concentration of the two-dimensional electron gas layer is in a range of 3.0×1017/cm2 to 3.8×1017/cm2, and a carrier mobility of the two-dimensional electron gas layer is in a range of 1.0×105 cm2/(V·s) to 4.0×105 cm2/(V·s).
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein the GaAs/AlGaAs superlattice layer is configured to isolate impurities in the GaAs isolation layer, the GaAs/AlGaAs superlattice layer comprises a structure formed by alternately growing a GaAs material and a AlGaAs material for 20 cycles, and a thickness of the GaAs isolation layer is in a range of 200 nm to 500 nm.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a thickness of the Si-doped AlxGa₁-xAs layer is in a range of 45 nm to 55 nm, a doping concentration of Si in the Si-doped AlxGa₁-xAs layer is in a range of 8×1017/cm3 to 9×1017/cm3, and a thickness of the GaAs surface layer is in a range of 9 nm to 11 nm.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a periphery of the GaAs surface layer is provided with a plurality of metal electrodes connected to the GaAs surface layer, a material of each of the plurality of metal electrodes is an Au/Ge/Ni alloy, the Au/Ge/Ni alloy forms an ohmic contact with the two-dimensional electron gas layer, and a weight percentage (wt %) ratio of Au:Ge:Ni in the Au/Ge/Ni alloy is 88:8:4; and the plurality of metal electrodes comprises three pairs of voltage terminals arranged transversely and a pair of current terminals arranged longitudinally.
A preparation method of the low-magnetic-field GaAs Quantum Hall Resistance sample as claimed in claim 1, comprising: step 1, removing an oxide layer from the GaAs substrate; step 2, growing the GaAs heterojunction material by a molecular beam epitaxy; step 3, performing lithography on the GaAs heterojunc-tion material to make the GaAs heterojunction material be in a Hall bar shape; step 4, removing an oxide layer from the GaAs heterojunction material in the Hall bar shape; step 5, depositing an Au/Ge/Ni electrode layer by an electron beam evaporation; step 6, performing a rapid thermal annealing to form an ohmic contact; and step 7, sealing.
Layer stacks claimed or described, ordered top of device to substrate.
low-magnetic-field GaAs Quantum Hall Resistance sample
Materials described outside the worked examples.
GaAs isolation layer
GaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Quantum Hall Resistance plateau 2 resistance value | 12906.4037 ohm | two-dimensional electron gas layer |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
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Patent
Atlas literature
Patent
US 12,660,512 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a quantum Hall effect of the disclosure. A left vertical coordinate in
FIG. 2 is a structural schematic diagram of a low- magnetic-field GaAs Quantum Hall Resistance sample of the disclosure. The reference numerals in
FIG. 3. A resistance between the voltage terminals 302 and 308 is the transverse resistance RH, and a resistance between the 15 voltage terminals 302 and 303 …
FIG. 4 is a schematic flowchart of the preparation method of the low-magnetic-field GaAs Quantum Hall Resistance sample in the disclosure. The preparation method …
FIG. 5 is a physical diagram of the low-magnetic-field GaAs Quantum Hall Resistance sample of the disclosure. In
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A low-magnetic-field gallium arsenide (GaAs) Quan-tum Hall Resistance sample, comprising: a GaAs heterojunction material, wherein the GaAs het-erojunction material has a seven-layer structure includ-ing first to seventh layers sequentially stacked upwards and bonded to a surface of a GaAs substrate; wherein the first layer of the seven-layer structure is a GaAs isolation layer, the second layer of the seven-layer structure is gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) superlattice layer, the third layer of the seven-layer structure is high-purity GaAs layer, the fourth layer of the seven-layer structure is a two-dimensional electron gas layer, the fifth layer of the seven-layer structure is an undoped AlxGa₁-xAs isolation layer, the sixth layer of the seven-layer struc-ture is a Si-doped AlxGa₁-xAs layer, and the seventh layer of the seven-layer structure is a GaAs surface layer, and wherein a thickness of the undoped AlxGa₁-xAs isolation layer is in a range of 10 nanometers (nm) to 30 nm, and x is in a range of 0.28 to 0.32, to match a carrier concentration of the two-dimensional electron gas layer with an expected low magnetic field of a central magnetic field, which is positively related to the carrier concentration of the two-dimensional electron gas layer, of a Quantum Hall Resistance plateau 2, and also to match the carrier concentration of the two-dimen-sional electron gas layer with an expected lower limit of a plateau width, which is positively related to the carrier concentration of the two-dimensional electron gas layer, of the Quantum Hall Resistance plateau 2; and the low magnetic field is in a range of 7 tesla (T) to 8 T, and the plateau width of the Quantum Hall Resis-tance plateau 2 is equal or greater than 0.6 T.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein the thickness of the undoped AlxGa₁-xAs isolation layer is in a range of 15 nm to 20 nm, the central magnetic field of the Quantum Hall Resistance plateau 2 is 7.6 T, and a magnetic field range corresponding to the Quantum Hall Resistance plateau 2 starts from 7.3 T and ends at 7.9 T.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a resistance value reproduced at the central magnetic field of the Quan-tum Hall Resistance plateau 2 is 12906.4037 ohms (Ω), and a relative measurement uncertainty is less than 2×10⁻⁸.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein an impurity concentration of the high-purity GaAs layer is on an order of 1013 per cubic centimeter (1013/cm3), and a thickness of the high-purity GaAs layer is in a range of 380 nm to 420 nm; the two-dimensional electron gas layer is formed at a contact surface between the high-purity GaAs layer and the undoped AlxGa₁-xAs isolation layer, a thickness of the two-dimen-sional electron gas layer is in a range of 9 nm to 11 nm, the carrier concentration of the two-dimensional electron gas layer is in a range of 3.0×1017/cm2 to 3.8×1017/cm2, and a carrier mobility of the two-dimensional electron gas layer is in a range of 1.0×105 cm2/(V·s) to 4.0×105 cm2/(V·s).
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein the GaAs/AlGaAs superlattice layer is configured to isolate impurities in the GaAs isolation layer, the GaAs/AlGaAs superlattice layer comprises a structure formed by alternately growing a GaAs material and a AlGaAs material for 20 cycles, and a thickness of the GaAs isolation layer is in a range of 200 nm to 500 nm.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a thickness of the Si-doped AlxGa₁-xAs layer is in a range of 45 nm to 55 nm, a doping concentration of Si in the Si-doped AlxGa₁-xAs layer is in a range of 8×1017/cm3 to 9×1017/cm3, and a thickness of the GaAs surface layer is in a range of 9 nm to 11 nm.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a periphery of the GaAs surface layer is provided with a plurality of metal electrodes connected to the GaAs surface layer, a material of each of the plurality of metal electrodes is an Au/Ge/Ni alloy, the Au/Ge/Ni alloy forms an ohmic contact with the two-dimensional electron gas layer, and a weight percentage (wt %) ratio of Au:Ge:Ni in the Au/Ge/Ni alloy is 88:8:4; and the plurality of metal electrodes comprises three pairs of voltage terminals arranged transversely and a pair of current terminals arranged longitudinally.
A preparation method of the low-magnetic-field GaAs Quantum Hall Resistance sample as claimed in claim 1, comprising: step 1, removing an oxide layer from the GaAs substrate; step 2, growing the GaAs heterojunction material by a molecular beam epitaxy; step 3, performing lithography on the GaAs heterojunc-tion material to make the GaAs heterojunction material be in a Hall bar shape; step 4, removing an oxide layer from the GaAs heterojunction material in the Hall bar shape; step 5, depositing an Au/Ge/Ni electrode layer by an electron beam evaporation; step 6, performing a rapid thermal annealing to form an ohmic contact; and step 7, sealing.
Layer stacks claimed or described, ordered top of device to substrate.
low-magnetic-field GaAs Quantum Hall Resistance sample
Materials described outside the worked examples.
GaAs isolation layer
GaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Quantum Hall Resistance plateau 2 resistance value | 12906.4037 ohm | two-dimensional electron gas layer |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,660,512 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a quantum Hall effect of the disclosure. A left vertical coordinate in
FIG. 2 is a structural schematic diagram of a low- magnetic-field GaAs Quantum Hall Resistance sample of the disclosure. The reference numerals in
FIG. 3. A resistance between the voltage terminals 302 and 308 is the transverse resistance RH, and a resistance between the 15 voltage terminals 302 and 303 …
FIG. 4 is a schematic flowchart of the preparation method of the low-magnetic-field GaAs Quantum Hall Resistance sample in the disclosure. The preparation method …
FIG. 5 is a physical diagram of the low-magnetic-field GaAs Quantum Hall Resistance sample of the disclosure. In
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A low-magnetic-field gallium arsenide (GaAs) Quan-tum Hall Resistance sample, comprising: a GaAs heterojunction material, wherein the GaAs het-erojunction material has a seven-layer structure includ-ing first to seventh layers sequentially stacked upwards and bonded to a surface of a GaAs substrate; wherein the first layer of the seven-layer structure is a GaAs isolation layer, the second layer of the seven-layer structure is gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) superlattice layer, the third layer of the seven-layer structure is high-purity GaAs layer, the fourth layer of the seven-layer structure is a two-dimensional electron gas layer, the fifth layer of the seven-layer structure is an undoped AlxGa₁-xAs isolation layer, the sixth layer of the seven-layer struc-ture is a Si-doped AlxGa₁-xAs layer, and the seventh layer of the seven-layer structure is a GaAs surface layer, and wherein a thickness of the undoped AlxGa₁-xAs isolation layer is in a range of 10 nanometers (nm) to 30 nm, and x is in a range of 0.28 to 0.32, to match a carrier concentration of the two-dimensional electron gas layer with an expected low magnetic field of a central magnetic field, which is positively related to the carrier concentration of the two-dimensional electron gas layer, of a Quantum Hall Resistance plateau 2, and also to match the carrier concentration of the two-dimen-sional electron gas layer with an expected lower limit of a plateau width, which is positively related to the carrier concentration of the two-dimensional electron gas layer, of the Quantum Hall Resistance plateau 2; and the low magnetic field is in a range of 7 tesla (T) to 8 T, and the plateau width of the Quantum Hall Resis-tance plateau 2 is equal or greater than 0.6 T.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein the thickness of the undoped AlxGa₁-xAs isolation layer is in a range of 15 nm to 20 nm, the central magnetic field of the Quantum Hall Resistance plateau 2 is 7.6 T, and a magnetic field range corresponding to the Quantum Hall Resistance plateau 2 starts from 7.3 T and ends at 7.9 T.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a resistance value reproduced at the central magnetic field of the Quan-tum Hall Resistance plateau 2 is 12906.4037 ohms (Ω), and a relative measurement uncertainty is less than 2×10⁻⁸.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein an impurity concentration of the high-purity GaAs layer is on an order of 1013 per cubic centimeter (1013/cm3), and a thickness of the high-purity GaAs layer is in a range of 380 nm to 420 nm; the two-dimensional electron gas layer is formed at a contact surface between the high-purity GaAs layer and the undoped AlxGa₁-xAs isolation layer, a thickness of the two-dimen-sional electron gas layer is in a range of 9 nm to 11 nm, the carrier concentration of the two-dimensional electron gas layer is in a range of 3.0×1017/cm2 to 3.8×1017/cm2, and a carrier mobility of the two-dimensional electron gas layer is in a range of 1.0×105 cm2/(V·s) to 4.0×105 cm2/(V·s).
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein the GaAs/AlGaAs superlattice layer is configured to isolate impurities in the GaAs isolation layer, the GaAs/AlGaAs superlattice layer comprises a structure formed by alternately growing a GaAs material and a AlGaAs material for 20 cycles, and a thickness of the GaAs isolation layer is in a range of 200 nm to 500 nm.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a thickness of the Si-doped AlxGa₁-xAs layer is in a range of 45 nm to 55 nm, a doping concentration of Si in the Si-doped AlxGa₁-xAs layer is in a range of 8×1017/cm3 to 9×1017/cm3, and a thickness of the GaAs surface layer is in a range of 9 nm to 11 nm.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a periphery of the GaAs surface layer is provided with a plurality of metal electrodes connected to the GaAs surface layer, a material of each of the plurality of metal electrodes is an Au/Ge/Ni alloy, the Au/Ge/Ni alloy forms an ohmic contact with the two-dimensional electron gas layer, and a weight percentage (wt %) ratio of Au:Ge:Ni in the Au/Ge/Ni alloy is 88:8:4; and the plurality of metal electrodes comprises three pairs of voltage terminals arranged transversely and a pair of current terminals arranged longitudinally.
A preparation method of the low-magnetic-field GaAs Quantum Hall Resistance sample as claimed in claim 1, comprising: step 1, removing an oxide layer from the GaAs substrate; step 2, growing the GaAs heterojunction material by a molecular beam epitaxy; step 3, performing lithography on the GaAs heterojunc-tion material to make the GaAs heterojunction material be in a Hall bar shape; step 4, removing an oxide layer from the GaAs heterojunction material in the Hall bar shape; step 5, depositing an Au/Ge/Ni electrode layer by an electron beam evaporation; step 6, performing a rapid thermal annealing to form an ohmic contact; and step 7, sealing.
Layer stacks claimed or described, ordered top of device to substrate.
low-magnetic-field GaAs Quantum Hall Resistance sample
Materials described outside the worked examples.
GaAs isolation layer
GaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Quantum Hall Resistance plateau 2 resistance value | 12906.4037 ohm | two-dimensional electron gas layer |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,660,512 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a quantum Hall effect of the disclosure. A left vertical coordinate in
FIG. 2 is a structural schematic diagram of a low- magnetic-field GaAs Quantum Hall Resistance sample of the disclosure. The reference numerals in
FIG. 3. A resistance between the voltage terminals 302 and 308 is the transverse resistance RH, and a resistance between the 15 voltage terminals 302 and 303 …
FIG. 4 is a schematic flowchart of the preparation method of the low-magnetic-field GaAs Quantum Hall Resistance sample in the disclosure. The preparation method …
FIG. 5 is a physical diagram of the low-magnetic-field GaAs Quantum Hall Resistance sample of the disclosure. In
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A low-magnetic-field gallium arsenide (GaAs) Quan-tum Hall Resistance sample, comprising: a GaAs heterojunction material, wherein the GaAs het-erojunction material has a seven-layer structure includ-ing first to seventh layers sequentially stacked upwards and bonded to a surface of a GaAs substrate; wherein the first layer of the seven-layer structure is a GaAs isolation layer, the second layer of the seven-layer structure is gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) superlattice layer, the third layer of the seven-layer structure is high-purity GaAs layer, the fourth layer of the seven-layer structure is a two-dimensional electron gas layer, the fifth layer of the seven-layer structure is an undoped AlxGa₁-xAs isolation layer, the sixth layer of the seven-layer struc-ture is a Si-doped AlxGa₁-xAs layer, and the seventh layer of the seven-layer structure is a GaAs surface layer, and wherein a thickness of the undoped AlxGa₁-xAs isolation layer is in a range of 10 nanometers (nm) to 30 nm, and x is in a range of 0.28 to 0.32, to match a carrier concentration of the two-dimensional electron gas layer with an expected low magnetic field of a central magnetic field, which is positively related to the carrier concentration of the two-dimensional electron gas layer, of a Quantum Hall Resistance plateau 2, and also to match the carrier concentration of the two-dimen-sional electron gas layer with an expected lower limit of a plateau width, which is positively related to the carrier concentration of the two-dimensional electron gas layer, of the Quantum Hall Resistance plateau 2; and the low magnetic field is in a range of 7 tesla (T) to 8 T, and the plateau width of the Quantum Hall Resis-tance plateau 2 is equal or greater than 0.6 T.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein the thickness of the undoped AlxGa₁-xAs isolation layer is in a range of 15 nm to 20 nm, the central magnetic field of the Quantum Hall Resistance plateau 2 is 7.6 T, and a magnetic field range corresponding to the Quantum Hall Resistance plateau 2 starts from 7.3 T and ends at 7.9 T.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a resistance value reproduced at the central magnetic field of the Quan-tum Hall Resistance plateau 2 is 12906.4037 ohms (Ω), and a relative measurement uncertainty is less than 2×10⁻⁸.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein an impurity concentration of the high-purity GaAs layer is on an order of 1013 per cubic centimeter (1013/cm3), and a thickness of the high-purity GaAs layer is in a range of 380 nm to 420 nm; the two-dimensional electron gas layer is formed at a contact surface between the high-purity GaAs layer and the undoped AlxGa₁-xAs isolation layer, a thickness of the two-dimen-sional electron gas layer is in a range of 9 nm to 11 nm, the carrier concentration of the two-dimensional electron gas layer is in a range of 3.0×1017/cm2 to 3.8×1017/cm2, and a carrier mobility of the two-dimensional electron gas layer is in a range of 1.0×105 cm2/(V·s) to 4.0×105 cm2/(V·s).
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein the GaAs/AlGaAs superlattice layer is configured to isolate impurities in the GaAs isolation layer, the GaAs/AlGaAs superlattice layer comprises a structure formed by alternately growing a GaAs material and a AlGaAs material for 20 cycles, and a thickness of the GaAs isolation layer is in a range of 200 nm to 500 nm.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a thickness of the Si-doped AlxGa₁-xAs layer is in a range of 45 nm to 55 nm, a doping concentration of Si in the Si-doped AlxGa₁-xAs layer is in a range of 8×1017/cm3 to 9×1017/cm3, and a thickness of the GaAs surface layer is in a range of 9 nm to 11 nm.
The low-magnetic-field GaAs Quantum Hall Resis-tance sample as claimed in claim 1, wherein a periphery of the GaAs surface layer is provided with a plurality of metal electrodes connected to the GaAs surface layer, a material of each of the plurality of metal electrodes is an Au/Ge/Ni alloy, the Au/Ge/Ni alloy forms an ohmic contact with the two-dimensional electron gas layer, and a weight percentage (wt %) ratio of Au:Ge:Ni in the Au/Ge/Ni alloy is 88:8:4; and the plurality of metal electrodes comprises three pairs of voltage terminals arranged transversely and a pair of current terminals arranged longitudinally.
A preparation method of the low-magnetic-field GaAs Quantum Hall Resistance sample as claimed in claim 1, comprising: step 1, removing an oxide layer from the GaAs substrate; step 2, growing the GaAs heterojunction material by a molecular beam epitaxy; step 3, performing lithography on the GaAs heterojunc-tion material to make the GaAs heterojunction material be in a Hall bar shape; step 4, removing an oxide layer from the GaAs heterojunction material in the Hall bar shape; step 5, depositing an Au/Ge/Ni electrode layer by an electron beam evaporation; step 6, performing a rapid thermal annealing to form an ohmic contact; and step 7, sealing.
Layer stacks claimed or described, ordered top of device to substrate.
low-magnetic-field GaAs Quantum Hall Resistance sample
Materials described outside the worked examples.
GaAs isolation layer
GaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Quantum Hall Resistance plateau 2 resistance value | 12906.4037 ohm | two-dimensional electron gas layer |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
two-dimensional electron gas layer
undoped AlxGa₁-xAs isolation layer
AlxGa₁-xAs
Si-doped AlxGa₁-xAs layer
AlxGa₁-xAs:Si
Au/Ge/Ni alloy electrode
(NH₄)2S saturated solution
(NH₄)2S
| <2e-8 dimensionless |
two-dimensional electron gas layer |
carrier mobility of two-dimensional electron gas layer | 100000–400000 cm2/(V·s) | two-dimensional electron gas layer |
carrier concentration of two-dimensional electron gas layer | 300000000000000000–380000000000000000 /cm2 | two-dimensional electron gas layer |
central magnetic field of Quantum Hall Resistance plateau 2 | 7.6 T | two-dimensional electron gas layer |
plateau width of Quantum Hall Resistance plateau 2 | ≥ 0.6 T | two-dimensional electron gas layer |
Thickness | 10–30 nm | — |
Thickness | 15–20 nm | — |
Thickness | 380–420 nm | — |
Thickness | 9–11 nm | — |
Thickness | 200–500 nm | — |
Thickness | 45–55 nm | — |
Temperature | 445–455 °C | — |
Duration | 4–6 minutes | — |
Temperature | 575–585 °C | — |
Thickness | 30–80 nm | — |
Temperature | 400–430 °C | — |
Duration | 4–6 min | — |
Gallium Arsenide Cell and Logic Circuit
two-dimensional electron gas layer
undoped AlxGa₁-xAs isolation layer
AlxGa₁-xAs
Si-doped AlxGa₁-xAs layer
AlxGa₁-xAs:Si
Au/Ge/Ni alloy electrode
(NH₄)2S saturated solution
(NH₄)2S
| <2e-8 dimensionless |
two-dimensional electron gas layer |
carrier mobility of two-dimensional electron gas layer | 100000–400000 cm2/(V·s) | two-dimensional electron gas layer |
carrier concentration of two-dimensional electron gas layer | 300000000000000000–380000000000000000 /cm2 | two-dimensional electron gas layer |
central magnetic field of Quantum Hall Resistance plateau 2 | 7.6 T | two-dimensional electron gas layer |
plateau width of Quantum Hall Resistance plateau 2 | ≥ 0.6 T | two-dimensional electron gas layer |
Thickness | 10–30 nm | — |
Thickness | 15–20 nm | — |
Thickness | 380–420 nm | — |
Thickness | 9–11 nm | — |
Thickness | 200–500 nm | — |
Thickness | 45–55 nm | — |
Temperature | 445–455 °C | — |
Duration | 4–6 minutes | — |
Temperature | 575–585 °C | — |
Thickness | 30–80 nm | — |
Temperature | 400–430 °C | — |
Duration | 4–6 min | — |
Gallium Arsenide Cell and Logic Circuit
two-dimensional electron gas layer
undoped AlxGa₁-xAs isolation layer
AlxGa₁-xAs
Si-doped AlxGa₁-xAs layer
AlxGa₁-xAs:Si
Au/Ge/Ni alloy electrode
(NH₄)2S saturated solution
(NH₄)2S
| <2e-8 dimensionless |
two-dimensional electron gas layer |
carrier mobility of two-dimensional electron gas layer | 100000–400000 cm2/(V·s) | two-dimensional electron gas layer |
carrier concentration of two-dimensional electron gas layer | 300000000000000000–380000000000000000 /cm2 | two-dimensional electron gas layer |
central magnetic field of Quantum Hall Resistance plateau 2 | 7.6 T | two-dimensional electron gas layer |
plateau width of Quantum Hall Resistance plateau 2 | ≥ 0.6 T | two-dimensional electron gas layer |
Thickness | 10–30 nm | — |
Thickness | 15–20 nm | — |
Thickness | 380–420 nm | — |
Thickness | 9–11 nm | — |
Thickness | 200–500 nm | — |
Thickness | 45–55 nm | — |
Temperature | 445–455 °C | — |
Duration | 4–6 minutes | — |
Temperature | 575–585 °C | — |
Thickness | 30–80 nm | — |
Temperature | 400–430 °C | — |
Duration | 4–6 min | — |
Gallium Arsenide Cell and Logic Circuit
two-dimensional electron gas layer
undoped AlxGa₁-xAs isolation layer
AlxGa₁-xAs
Si-doped AlxGa₁-xAs layer
AlxGa₁-xAs:Si
Au/Ge/Ni alloy electrode
(NH₄)2S saturated solution
(NH₄)2S
| <2e-8 dimensionless |
two-dimensional electron gas layer |
carrier mobility of two-dimensional electron gas layer | 100000–400000 cm2/(V·s) | two-dimensional electron gas layer |
carrier concentration of two-dimensional electron gas layer | 300000000000000000–380000000000000000 /cm2 | two-dimensional electron gas layer |
central magnetic field of Quantum Hall Resistance plateau 2 | 7.6 T | two-dimensional electron gas layer |
plateau width of Quantum Hall Resistance plateau 2 | ≥ 0.6 T | two-dimensional electron gas layer |
Thickness | 10–30 nm | — |
Thickness | 15–20 nm | — |
Thickness | 380–420 nm | — |
Thickness | 9–11 nm | — |
Thickness | 200–500 nm | — |
Thickness | 45–55 nm | — |
Temperature | 445–455 °C | — |
Duration | 4–6 minutes | — |
Temperature | 575–585 °C | — |
Thickness | 30–80 nm | — |
Temperature | 400–430 °C | — |
Duration | 4–6 min | — |
