A method of manufacturing a graphene nanomesh, comprising: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the particles at their de p osited positions; and removing the particles.
2
Dependent← claim 1metal particles (Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V)
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles contain Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V, or any combination thereof.
3
Dependent← claim 1carbon-absorbing nanoparticles
The method of manufacturing the graphene nanomesh according to claim 1, wherein a diameter of the particles is 0.5 nm to 100 nm.
4
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the removing the particles comprises dissolving the particles in an acid solution. 2 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
5
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the removing the particles comprises evaporating the particles by heating the particles.
6
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles are deposited on the graphene by a dry method.
7
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles are heated to a temperature equal to 700 0 C or lower while making the particles absorb carbon.
8
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein a width of a neck is within a range of -20% to + 20% of a size of holes formed by the removing the particles.
A method of manufacturing a semiconductor device, comprising: forming a structure in which a source electrode and a drain electrode are provided on both ends of a graphene nanomesh on a substrate; and forming a gate electrode which controls a potential of the graphene nanomesh between the source electrode and the drain electrode, wherein the forming the structure comprises: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer which is to be the graphene nanomesh; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the p articles at their de p osited p ositions; and removing the particles. 3 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
10
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the forming the structure comprises forming the source electrode and the drain electrode after the removing the particles.
11
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the forming the structure comprises forming the source electrode and the drain electrode on both ends of the graphene layer before the depositing the particles.
12
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein as the structure, a structure having a space between the graphene nanomesh and the substrate is formed.
13
Dependent← claim 9metal particles (Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V)
The method of manufacturing the semiconductor device according to claim 9, wherein the particles contain Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V, or any combination thereof.
14
Dependent← claim 9carbon-absorbing nanoparticles
The method of manufacturing the semiconductor device according to claim 9, wherein a diameter of the particles is 0.5 nm to 100 nm.
15
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the removing the particles comprises dissolving the particles in an acid solution.
16
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the removing the particles comprises evaporating the particles by heating the particles. 4 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
17
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the particles are deposited on the graphene layer by a dry method.
18
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the particles are heated to a temperature equal to 700 0 C or lower while making the particles absorb carbon.
19
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein a width of a neck is within a range of -20% to + 20% of a size of holes formed by the removing the particles.
A method of manufacturing a photodetector, comprising forming a structure in which an anode electrode and a cathode electrode are provided on both ends of a graphene nanomesh and a pn junction exists on a portion of the graphene nanomesh between the anode electrode and the cathode electrode on a substrate, wherein the forming the structure comprises: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer which is to be the graphene nanomesh; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the p articles at their de p osited p ositions; and removing the particles.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanomesh
graphene nanomeshperforated graphene channel
substratesubstrate
graphene nanomesh field-effect transistor
gateelectrodegate electrode
drainelectrodedrain electrode
sourceelectrodesource electrode
Materials
Materials described outside the worked examples.
graphene
C
Substrate Layer For Nanomesh Formation
carbon-absorbing nanoparticles
Patterning Agent
Process steps
Additional fabrication and treatment steps described in the patent.
1
Nanoparticle Deposition Dry
Step 1
Ambient
He
Process details
laser:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
0.5–100 nm
—
Thickness
Why these are connected
Related documents with shared materials, methods, properties, or citations.
A method of manufacturing a graphene nanomesh, comprising: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the particles at their de p osited positions; and removing the particles.
2
Dependent← claim 1metal particles (Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V)
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles contain Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V, or any combination thereof.
3
Dependent← claim 1carbon-absorbing nanoparticles
The method of manufacturing the graphene nanomesh according to claim 1, wherein a diameter of the particles is 0.5 nm to 100 nm.
4
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the removing the particles comprises dissolving the particles in an acid solution. 2 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
5
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the removing the particles comprises evaporating the particles by heating the particles.
6
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles are deposited on the graphene by a dry method.
7
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles are heated to a temperature equal to 700 0 C or lower while making the particles absorb carbon.
8
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein a width of a neck is within a range of -20% to + 20% of a size of holes formed by the removing the particles.
A method of manufacturing a semiconductor device, comprising: forming a structure in which a source electrode and a drain electrode are provided on both ends of a graphene nanomesh on a substrate; and forming a gate electrode which controls a potential of the graphene nanomesh between the source electrode and the drain electrode, wherein the forming the structure comprises: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer which is to be the graphene nanomesh; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the p articles at their de p osited p ositions; and removing the particles. 3 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
10
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the forming the structure comprises forming the source electrode and the drain electrode after the removing the particles.
11
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the forming the structure comprises forming the source electrode and the drain electrode on both ends of the graphene layer before the depositing the particles.
12
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein as the structure, a structure having a space between the graphene nanomesh and the substrate is formed.
13
Dependent← claim 9metal particles (Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V)
The method of manufacturing the semiconductor device according to claim 9, wherein the particles contain Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V, or any combination thereof.
14
Dependent← claim 9carbon-absorbing nanoparticles
The method of manufacturing the semiconductor device according to claim 9, wherein a diameter of the particles is 0.5 nm to 100 nm.
15
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the removing the particles comprises dissolving the particles in an acid solution.
16
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the removing the particles comprises evaporating the particles by heating the particles. 4 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
17
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the particles are deposited on the graphene layer by a dry method.
18
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the particles are heated to a temperature equal to 700 0 C or lower while making the particles absorb carbon.
19
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein a width of a neck is within a range of -20% to + 20% of a size of holes formed by the removing the particles.
A method of manufacturing a photodetector, comprising forming a structure in which an anode electrode and a cathode electrode are provided on both ends of a graphene nanomesh and a pn junction exists on a portion of the graphene nanomesh between the anode electrode and the cathode electrode on a substrate, wherein the forming the structure comprises: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer which is to be the graphene nanomesh; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the p articles at their de p osited p ositions; and removing the particles.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanomesh
graphene nanomeshperforated graphene channel
substratesubstrate
graphene nanomesh field-effect transistor
gateelectrodegate electrode
drainelectrodedrain electrode
sourceelectrodesource electrode
Materials
Materials described outside the worked examples.
graphene
C
Substrate Layer For Nanomesh Formation
carbon-absorbing nanoparticles
Patterning Agent
Process steps
Additional fabrication and treatment steps described in the patent.
1
Nanoparticle Deposition Dry
Step 1
Ambient
He
Process details
laser:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
0.5–100 nm
—
Thickness
Why these are connected
Related documents with shared materials, methods, properties, or citations.
A method of manufacturing a graphene nanomesh, comprising: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the particles at their de p osited positions; and removing the particles.
2
Dependent← claim 1metal particles (Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V)
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles contain Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V, or any combination thereof.
3
Dependent← claim 1carbon-absorbing nanoparticles
The method of manufacturing the graphene nanomesh according to claim 1, wherein a diameter of the particles is 0.5 nm to 100 nm.
4
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the removing the particles comprises dissolving the particles in an acid solution. 2 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
5
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the removing the particles comprises evaporating the particles by heating the particles.
6
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles are deposited on the graphene by a dry method.
7
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles are heated to a temperature equal to 700 0 C or lower while making the particles absorb carbon.
8
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein a width of a neck is within a range of -20% to + 20% of a size of holes formed by the removing the particles.
A method of manufacturing a semiconductor device, comprising: forming a structure in which a source electrode and a drain electrode are provided on both ends of a graphene nanomesh on a substrate; and forming a gate electrode which controls a potential of the graphene nanomesh between the source electrode and the drain electrode, wherein the forming the structure comprises: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer which is to be the graphene nanomesh; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the p articles at their de p osited p ositions; and removing the particles. 3 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
10
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the forming the structure comprises forming the source electrode and the drain electrode after the removing the particles.
11
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the forming the structure comprises forming the source electrode and the drain electrode on both ends of the graphene layer before the depositing the particles.
12
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein as the structure, a structure having a space between the graphene nanomesh and the substrate is formed.
13
Dependent← claim 9metal particles (Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V)
The method of manufacturing the semiconductor device according to claim 9, wherein the particles contain Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V, or any combination thereof.
14
Dependent← claim 9carbon-absorbing nanoparticles
The method of manufacturing the semiconductor device according to claim 9, wherein a diameter of the particles is 0.5 nm to 100 nm.
15
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the removing the particles comprises dissolving the particles in an acid solution.
16
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the removing the particles comprises evaporating the particles by heating the particles. 4 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
17
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the particles are deposited on the graphene layer by a dry method.
18
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the particles are heated to a temperature equal to 700 0 C or lower while making the particles absorb carbon.
19
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein a width of a neck is within a range of -20% to + 20% of a size of holes formed by the removing the particles.
A method of manufacturing a photodetector, comprising forming a structure in which an anode electrode and a cathode electrode are provided on both ends of a graphene nanomesh and a pn junction exists on a portion of the graphene nanomesh between the anode electrode and the cathode electrode on a substrate, wherein the forming the structure comprises: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer which is to be the graphene nanomesh; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the p articles at their de p osited p ositions; and removing the particles.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanomesh
graphene nanomeshperforated graphene channel
substratesubstrate
graphene nanomesh field-effect transistor
gateelectrodegate electrode
drainelectrodedrain electrode
sourceelectrodesource electrode
Materials
Materials described outside the worked examples.
graphene
C
Substrate Layer For Nanomesh Formation
carbon-absorbing nanoparticles
Patterning Agent
Process steps
Additional fabrication and treatment steps described in the patent.
1
Nanoparticle Deposition Dry
Step 1
Ambient
He
Process details
laser:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
0.5–100 nm
—
Thickness
Why these are connected
Related documents with shared materials, methods, properties, or citations.
A method of manufacturing a graphene nanomesh, comprising: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the particles at their de p osited positions; and removing the particles.
2
Dependent← claim 1metal particles (Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V)
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles contain Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V, or any combination thereof.
3
Dependent← claim 1carbon-absorbing nanoparticles
The method of manufacturing the graphene nanomesh according to claim 1, wherein a diameter of the particles is 0.5 nm to 100 nm.
4
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the removing the particles comprises dissolving the particles in an acid solution. 2 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
5
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the removing the particles comprises evaporating the particles by heating the particles.
6
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles are deposited on the graphene by a dry method.
7
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein the particles are heated to a temperature equal to 700 0 C or lower while making the particles absorb carbon.
8
Dependent← claim 1
The method of manufacturing the graphene nanomesh according to claim 1, wherein a width of a neck is within a range of -20% to + 20% of a size of holes formed by the removing the particles.
A method of manufacturing a semiconductor device, comprising: forming a structure in which a source electrode and a drain electrode are provided on both ends of a graphene nanomesh on a substrate; and forming a gate electrode which controls a potential of the graphene nanomesh between the source electrode and the drain electrode, wherein the forming the structure comprises: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer which is to be the graphene nanomesh; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the p articles at their de p osited p ositions; and removing the particles. 3 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
10
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the forming the structure comprises forming the source electrode and the drain electrode after the removing the particles.
11
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the forming the structure comprises forming the source electrode and the drain electrode on both ends of the graphene layer before the depositing the particles.
12
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein as the structure, a structure having a space between the graphene nanomesh and the substrate is formed.
13
Dependent← claim 9metal particles (Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V)
The method of manufacturing the semiconductor device according to claim 9, wherein the particles contain Ni, Co, Fe, Cu, Ru, Ti, Ta, Mo, Pt, Pd, W, Re, or V, or any combination thereof.
14
Dependent← claim 9carbon-absorbing nanoparticles
The method of manufacturing the semiconductor device according to claim 9, wherein a diameter of the particles is 0.5 nm to 100 nm.
15
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the removing the particles comprises dissolving the particles in an acid solution.
16
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the removing the particles comprises evaporating the particles by heating the particles. 4 PATENT Docket No.: 11-40453 App. Ser. No.: 14/164,694
17
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the particles are deposited on the graphene layer by a dry method.
18
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein the particles are heated to a temperature equal to 700 0 C or lower while making the particles absorb carbon.
19
Dependent← claim 9
The method of manufacturing the semiconductor device according to claim 9, wherein a width of a neck is within a range of -20% to + 20% of a size of holes formed by the removing the particles.
A method of manufacturing a photodetector, comprising forming a structure in which an anode electrode and a cathode electrode are provided on both ends of a graphene nanomesh and a pn junction exists on a portion of the graphene nanomesh between the anode electrode and the cathode electrode on a substrate, wherein the forming the structure comprises: depositing particles having a property of absorbing carbon at a particular temperature or higher on a graphene layer which is to be the graphene nanomesh; heating the particles to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene layer under the particles with kee ping the p articles at their de p osited p ositions; and removing the particles.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanomesh
graphene nanomeshperforated graphene channel
substratesubstrate
graphene nanomesh field-effect transistor
gateelectrodegate electrode
drainelectrodedrain electrode
sourceelectrodesource electrode
Materials
Materials described outside the worked examples.
graphene
C
Substrate Layer For Nanomesh Formation
carbon-absorbing nanoparticles
Patterning Agent
Process steps
Additional fabrication and treatment steps described in the patent.
1
Nanoparticle Deposition Dry
Step 1
Ambient
He
Process details
laser:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
0.5–100 nm
—
Thickness
Why these are connected
Related documents with shared materials, methods, properties, or citations.
