Patent
US 8,476,757OF THE INVENTION
Peter A. Stenger
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,476,757Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 a is a schematic diagram of a solder bump connection flip chip design.
Figure 2 is a schematic diagram of a MMIC flip chip interconnect according to an embodiment of the present invention.
Figure 3 is a flow chart illustrating a method of creating MMIC flip chip interconnect according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of flip chip packaging a monolithic microwave integrated circuit (MMI C) chip having an active side with surface bond pads, said method comprising the steps of: coating the active side of the chip with a dielectric coating that inhibits deposition of metal plating materials; removing a portion of the dielectric coating to expose the bond pads; bonding stud bumps to the bond pads; plating the active side of the chip with a first metal plating material that does not adhere to the dielectric coating such that the stud bumps are plated with the first metal plating material while other portions of the chip are not plated with the first metal plating material; plating the active side of the chip with a second metal plating material that does not adhere to the dielectric coating such that the plated stud bumps are further plated with the second metal plating material while other portions of the chip are not plated with the second metal plating material; orienting the chip so that the stud bumps on the active side of the chip face bond pads on a substrate; and bonding the stud bumps on the chip to the bond pads on the substrate.
The method of claim 1, wherein said first plating material is nickel.
The method of claim 1, further comprising the step of mounting the chip on a tab having a coefficient of thermal expansion comparable to the chip.
The method of claim 1, further comprising the step of plating exposed edges of said chip with the first and second plating materials.
The method of claim 1, wherein a peripheral portion of the active side of the chip adjacent dicing streets is exposed and further comprising the step of plating the peripheral portion of the active side of the chip with the first and second plating materials.
A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion of said active side, and a dielectric coating on a second portion of said active side; App. No. 12/572,476 Response to, Office Action Page 6 a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chip; a plurality of stud bumps bonded to said surface bond pads on said MMIC chip; a first layer of a first plating material plating said stud bumps; a second layer of a second plating material plating said first layer; a nRd a solder bond connecting said plated stud bumps to said surface bond pads on said substrate and a tab mounted on said MMIC chip, wherein said tab is covered on at least one side with said first and second plating materials.
The flip chip interconnect of claim 11, wherein said first plating material is nickel.
App. No. 12/572,476 Response to, Office Action Page 7 17. The flip chip interconnect of claim 11, furthe r eemprising-a tab meunted on said MMIC chip and having wherein said tab has a coefficient of thermal expansion comparable to said chip.
A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion o f said active side, and a dielectric coating on a second portion of said active side: a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chi p: a plurality of stud bumps bonded to said surface bond pads on said MM I C chip; a first layer of a first plating material plating said stud bumps: a second la y er of a second plating material plating said first layer: and a solder bond connecting said plated stud bumps to said surface bond pads on said substrate The flip chip interconnect of claim 11, wherein exposed edges of said chip are covered with said first and second plating materials.
A monolithic microwave integrated circuit (MMIC) fli p chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion o f said active side, and a dielectric coating on a second portion of said active side; a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chi p: Ap p. No. 12/572,476 Response to, Office Action Page 8 a plurality of stud bumps bonded to said surface bond pads on said MM I C chi p; a first la y er of a first plating material plating said stud bumps; a second la y er of a second plating material plating said first layer; and a solder bond connecting said plated stud bumps to said surface bond pads on said substrate The flip ehip interconnect of elaim 14, wherein an exposed peripheral portion of the active side of said chip adjacent dicing streets is covered with said first and second plating materials.
Layer stacks claimed or described, ordered top of device to substrate.
MMIC flip chip interconnect
Materials described outside the worked examples.
first metal plating material
second metal plating material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–10 mm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,476,757Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 a is a schematic diagram of a solder bump connection flip chip design.
Figure 2 is a schematic diagram of a MMIC flip chip interconnect according to an embodiment of the present invention.
Figure 3 is a flow chart illustrating a method of creating MMIC flip chip interconnect according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of flip chip packaging a monolithic microwave integrated circuit (MMI C) chip having an active side with surface bond pads, said method comprising the steps of: coating the active side of the chip with a dielectric coating that inhibits deposition of metal plating materials; removing a portion of the dielectric coating to expose the bond pads; bonding stud bumps to the bond pads; plating the active side of the chip with a first metal plating material that does not adhere to the dielectric coating such that the stud bumps are plated with the first metal plating material while other portions of the chip are not plated with the first metal plating material; plating the active side of the chip with a second metal plating material that does not adhere to the dielectric coating such that the plated stud bumps are further plated with the second metal plating material while other portions of the chip are not plated with the second metal plating material; orienting the chip so that the stud bumps on the active side of the chip face bond pads on a substrate; and bonding the stud bumps on the chip to the bond pads on the substrate.
The method of claim 1, wherein said first plating material is nickel.
The method of claim 1, further comprising the step of mounting the chip on a tab having a coefficient of thermal expansion comparable to the chip.
The method of claim 1, further comprising the step of plating exposed edges of said chip with the first and second plating materials.
The method of claim 1, wherein a peripheral portion of the active side of the chip adjacent dicing streets is exposed and further comprising the step of plating the peripheral portion of the active side of the chip with the first and second plating materials.
A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion of said active side, and a dielectric coating on a second portion of said active side; App. No. 12/572,476 Response to, Office Action Page 6 a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chip; a plurality of stud bumps bonded to said surface bond pads on said MMIC chip; a first layer of a first plating material plating said stud bumps; a second layer of a second plating material plating said first layer; a nRd a solder bond connecting said plated stud bumps to said surface bond pads on said substrate and a tab mounted on said MMIC chip, wherein said tab is covered on at least one side with said first and second plating materials.
The flip chip interconnect of claim 11, wherein said first plating material is nickel.
App. No. 12/572,476 Response to, Office Action Page 7 17. The flip chip interconnect of claim 11, furthe r eemprising-a tab meunted on said MMIC chip and having wherein said tab has a coefficient of thermal expansion comparable to said chip.
A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion o f said active side, and a dielectric coating on a second portion of said active side: a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chi p: a plurality of stud bumps bonded to said surface bond pads on said MM I C chip; a first layer of a first plating material plating said stud bumps: a second la y er of a second plating material plating said first layer: and a solder bond connecting said plated stud bumps to said surface bond pads on said substrate The flip chip interconnect of claim 11, wherein exposed edges of said chip are covered with said first and second plating materials.
A monolithic microwave integrated circuit (MMIC) fli p chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion o f said active side, and a dielectric coating on a second portion of said active side; a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chi p: Ap p. No. 12/572,476 Response to, Office Action Page 8 a plurality of stud bumps bonded to said surface bond pads on said MM I C chi p; a first la y er of a first plating material plating said stud bumps; a second la y er of a second plating material plating said first layer; and a solder bond connecting said plated stud bumps to said surface bond pads on said substrate The flip ehip interconnect of elaim 14, wherein an exposed peripheral portion of the active side of said chip adjacent dicing streets is covered with said first and second plating materials.
Layer stacks claimed or described, ordered top of device to substrate.
MMIC flip chip interconnect
Materials described outside the worked examples.
first metal plating material
second metal plating material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–10 mm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,476,757Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 a is a schematic diagram of a solder bump connection flip chip design.
Figure 2 is a schematic diagram of a MMIC flip chip interconnect according to an embodiment of the present invention.
Figure 3 is a flow chart illustrating a method of creating MMIC flip chip interconnect according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of flip chip packaging a monolithic microwave integrated circuit (MMI C) chip having an active side with surface bond pads, said method comprising the steps of: coating the active side of the chip with a dielectric coating that inhibits deposition of metal plating materials; removing a portion of the dielectric coating to expose the bond pads; bonding stud bumps to the bond pads; plating the active side of the chip with a first metal plating material that does not adhere to the dielectric coating such that the stud bumps are plated with the first metal plating material while other portions of the chip are not plated with the first metal plating material; plating the active side of the chip with a second metal plating material that does not adhere to the dielectric coating such that the plated stud bumps are further plated with the second metal plating material while other portions of the chip are not plated with the second metal plating material; orienting the chip so that the stud bumps on the active side of the chip face bond pads on a substrate; and bonding the stud bumps on the chip to the bond pads on the substrate.
The method of claim 1, wherein said first plating material is nickel.
The method of claim 1, further comprising the step of mounting the chip on a tab having a coefficient of thermal expansion comparable to the chip.
The method of claim 1, further comprising the step of plating exposed edges of said chip with the first and second plating materials.
The method of claim 1, wherein a peripheral portion of the active side of the chip adjacent dicing streets is exposed and further comprising the step of plating the peripheral portion of the active side of the chip with the first and second plating materials.
A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion of said active side, and a dielectric coating on a second portion of said active side; App. No. 12/572,476 Response to, Office Action Page 6 a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chip; a plurality of stud bumps bonded to said surface bond pads on said MMIC chip; a first layer of a first plating material plating said stud bumps; a second layer of a second plating material plating said first layer; a nRd a solder bond connecting said plated stud bumps to said surface bond pads on said substrate and a tab mounted on said MMIC chip, wherein said tab is covered on at least one side with said first and second plating materials.
The flip chip interconnect of claim 11, wherein said first plating material is nickel.
App. No. 12/572,476 Response to, Office Action Page 7 17. The flip chip interconnect of claim 11, furthe r eemprising-a tab meunted on said MMIC chip and having wherein said tab has a coefficient of thermal expansion comparable to said chip.
A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion o f said active side, and a dielectric coating on a second portion of said active side: a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chi p: a plurality of stud bumps bonded to said surface bond pads on said MM I C chip; a first layer of a first plating material plating said stud bumps: a second la y er of a second plating material plating said first layer: and a solder bond connecting said plated stud bumps to said surface bond pads on said substrate The flip chip interconnect of claim 11, wherein exposed edges of said chip are covered with said first and second plating materials.
A monolithic microwave integrated circuit (MMIC) fli p chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion o f said active side, and a dielectric coating on a second portion of said active side; a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chi p: Ap p. No. 12/572,476 Response to, Office Action Page 8 a plurality of stud bumps bonded to said surface bond pads on said MM I C chi p; a first la y er of a first plating material plating said stud bumps; a second la y er of a second plating material plating said first layer; and a solder bond connecting said plated stud bumps to said surface bond pads on said substrate The flip ehip interconnect of elaim 14, wherein an exposed peripheral portion of the active side of said chip adjacent dicing streets is covered with said first and second plating materials.
Layer stacks claimed or described, ordered top of device to substrate.
MMIC flip chip interconnect
Materials described outside the worked examples.
first metal plating material
second metal plating material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–10 mm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,476,757Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 a is a schematic diagram of a solder bump connection flip chip design.
Figure 2 is a schematic diagram of a MMIC flip chip interconnect according to an embodiment of the present invention.
Figure 3 is a flow chart illustrating a method of creating MMIC flip chip interconnect according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of flip chip packaging a monolithic microwave integrated circuit (MMI C) chip having an active side with surface bond pads, said method comprising the steps of: coating the active side of the chip with a dielectric coating that inhibits deposition of metal plating materials; removing a portion of the dielectric coating to expose the bond pads; bonding stud bumps to the bond pads; plating the active side of the chip with a first metal plating material that does not adhere to the dielectric coating such that the stud bumps are plated with the first metal plating material while other portions of the chip are not plated with the first metal plating material; plating the active side of the chip with a second metal plating material that does not adhere to the dielectric coating such that the plated stud bumps are further plated with the second metal plating material while other portions of the chip are not plated with the second metal plating material; orienting the chip so that the stud bumps on the active side of the chip face bond pads on a substrate; and bonding the stud bumps on the chip to the bond pads on the substrate.
The method of claim 1, wherein said first plating material is nickel.
The method of claim 1, further comprising the step of mounting the chip on a tab having a coefficient of thermal expansion comparable to the chip.
The method of claim 1, further comprising the step of plating exposed edges of said chip with the first and second plating materials.
The method of claim 1, wherein a peripheral portion of the active side of the chip adjacent dicing streets is exposed and further comprising the step of plating the peripheral portion of the active side of the chip with the first and second plating materials.
A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion of said active side, and a dielectric coating on a second portion of said active side; App. No. 12/572,476 Response to, Office Action Page 6 a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chip; a plurality of stud bumps bonded to said surface bond pads on said MMIC chip; a first layer of a first plating material plating said stud bumps; a second layer of a second plating material plating said first layer; a nRd a solder bond connecting said plated stud bumps to said surface bond pads on said substrate and a tab mounted on said MMIC chip, wherein said tab is covered on at least one side with said first and second plating materials.
The flip chip interconnect of claim 11, wherein said first plating material is nickel.
App. No. 12/572,476 Response to, Office Action Page 7 17. The flip chip interconnect of claim 11, furthe r eemprising-a tab meunted on said MMIC chip and having wherein said tab has a coefficient of thermal expansion comparable to said chip.
A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion o f said active side, and a dielectric coating on a second portion of said active side: a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chi p: a plurality of stud bumps bonded to said surface bond pads on said MM I C chip; a first layer of a first plating material plating said stud bumps: a second la y er of a second plating material plating said first layer: and a solder bond connecting said plated stud bumps to said surface bond pads on said substrate The flip chip interconnect of claim 11, wherein exposed edges of said chip are covered with said first and second plating materials.
A monolithic microwave integrated circuit (MMIC) fli p chip interconnect comprising: a MM I C chip having an active side, a plurality of surface bond pads on a first portion o f said active side, and a dielectric coating on a second portion of said active side; a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chi p: Ap p. No. 12/572,476 Response to, Office Action Page 8 a plurality of stud bumps bonded to said surface bond pads on said MM I C chi p; a first la y er of a first plating material plating said stud bumps; a second la y er of a second plating material plating said first layer; and a solder bond connecting said plated stud bumps to said surface bond pads on said substrate The flip ehip interconnect of elaim 14, wherein an exposed peripheral portion of the active side of said chip adjacent dicing streets is covered with said first and second plating materials.
Layer stacks claimed or described, ordered top of device to substrate.
MMIC flip chip interconnect
Materials described outside the worked examples.
first metal plating material
second metal plating material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–10 mm | — |
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