Patent
US 10,053,772Title: DOPED GRAPHENE 12 10o S₁₁₂ 1 Fig ure 1b
Saverio Russo, Monica Cracuin, Thomas Hardisty Bointon
9 April 2015·US
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Patent
Atlas literature
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US 10,053,772Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 a-t o 1 d are -diagrammatic representations-illustrating steps-in the-process for forming a doped relativelylarge-area-multilayer graphene-element in -accordance with- one embodiment of-the invention; [003 0] A relatively large area, multi-layered graphene element 10 is illustrated in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a uniformly or substantially uniformly doped area multi-layered graphene element comprising the steps of: forming openings in a multi-layered graphene element of large area; placing the graphene element and a dopant under low pressure conditions, lower than atmospheric pressure; and holding the graphene element and dopant at an elevated temperature, higher than ambient temperature, for a period of time whilst under the low pressure conditions; wherein the openings extend only through some of the layers of the graphene element. Currently amended
A method according to Claim 1, wherein the openings are formed by drilling. Original
A method according to Claim 1, wherein the openings are formed by etching. Original
A method according to Claim 1, wherein the dopant comprises iron (III) chloride. Previously presented
A method according to Claim 1, wherein the dopant comprises a precursor for subsequent substitution with another dopant. Previously presented
A method according to Claim 1, wherein the element is formed by the transfer of monolayer C V D deposited graphene layers. Previously presented
A method according to Claim 1, wherein the element comprises a multi-layer CVD deposited layer transferred onto a substrate. Previously presented
A method according to Claim 1, wherein the elevated temperature is around 300 ° C, and the element is held at the elevated temperature for at least 5 hours. Previously presented
. Canceled
. Canceled
A method of producing a uniformly or substantially uniformly doped large area multi-layered graphene element comprising the steps of: forming openings in a multi-layered graphene element of large area; placing the graphene element and a dopant under low pressure conditions, lower than atmospheric pressure; and holding the graphene element and dopant at an elevated temperature, higher than ambient temperature, for a period of time whilst under the low pressure conditions; wherein the openings extend only through some of the layers of the graphene element, and A wherein the element has an area of at least 1 cm 2 Currently amended
14-15. Cancelled. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
large-area multi-layered doped graphene element
Materials described outside the worked examples.
multi-layered graphene
iron (III) chloride
FeCl₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 cm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,053,772Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 a-t o 1 d are -diagrammatic representations-illustrating steps-in the-process for forming a doped relativelylarge-area-multilayer graphene-element in -accordance with- one embodiment of-the invention; [003 0] A relatively large area, multi-layered graphene element 10 is illustrated in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a uniformly or substantially uniformly doped area multi-layered graphene element comprising the steps of: forming openings in a multi-layered graphene element of large area; placing the graphene element and a dopant under low pressure conditions, lower than atmospheric pressure; and holding the graphene element and dopant at an elevated temperature, higher than ambient temperature, for a period of time whilst under the low pressure conditions; wherein the openings extend only through some of the layers of the graphene element. Currently amended
A method according to Claim 1, wherein the openings are formed by drilling. Original
A method according to Claim 1, wherein the openings are formed by etching. Original
A method according to Claim 1, wherein the dopant comprises iron (III) chloride. Previously presented
A method according to Claim 1, wherein the dopant comprises a precursor for subsequent substitution with another dopant. Previously presented
A method according to Claim 1, wherein the element is formed by the transfer of monolayer C V D deposited graphene layers. Previously presented
A method according to Claim 1, wherein the element comprises a multi-layer CVD deposited layer transferred onto a substrate. Previously presented
A method according to Claim 1, wherein the elevated temperature is around 300 ° C, and the element is held at the elevated temperature for at least 5 hours. Previously presented
. Canceled
. Canceled
A method of producing a uniformly or substantially uniformly doped large area multi-layered graphene element comprising the steps of: forming openings in a multi-layered graphene element of large area; placing the graphene element and a dopant under low pressure conditions, lower than atmospheric pressure; and holding the graphene element and dopant at an elevated temperature, higher than ambient temperature, for a period of time whilst under the low pressure conditions; wherein the openings extend only through some of the layers of the graphene element, and A wherein the element has an area of at least 1 cm 2 Currently amended
14-15. Cancelled. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
large-area multi-layered doped graphene element
Materials described outside the worked examples.
multi-layered graphene
iron (III) chloride
FeCl₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 cm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,053,772Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 a-t o 1 d are -diagrammatic representations-illustrating steps-in the-process for forming a doped relativelylarge-area-multilayer graphene-element in -accordance with- one embodiment of-the invention; [003 0] A relatively large area, multi-layered graphene element 10 is illustrated in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a uniformly or substantially uniformly doped area multi-layered graphene element comprising the steps of: forming openings in a multi-layered graphene element of large area; placing the graphene element and a dopant under low pressure conditions, lower than atmospheric pressure; and holding the graphene element and dopant at an elevated temperature, higher than ambient temperature, for a period of time whilst under the low pressure conditions; wherein the openings extend only through some of the layers of the graphene element. Currently amended
A method according to Claim 1, wherein the openings are formed by drilling. Original
A method according to Claim 1, wherein the openings are formed by etching. Original
A method according to Claim 1, wherein the dopant comprises iron (III) chloride. Previously presented
A method according to Claim 1, wherein the dopant comprises a precursor for subsequent substitution with another dopant. Previously presented
A method according to Claim 1, wherein the element is formed by the transfer of monolayer C V D deposited graphene layers. Previously presented
A method according to Claim 1, wherein the element comprises a multi-layer CVD deposited layer transferred onto a substrate. Previously presented
A method according to Claim 1, wherein the elevated temperature is around 300 ° C, and the element is held at the elevated temperature for at least 5 hours. Previously presented
. Canceled
. Canceled
A method of producing a uniformly or substantially uniformly doped large area multi-layered graphene element comprising the steps of: forming openings in a multi-layered graphene element of large area; placing the graphene element and a dopant under low pressure conditions, lower than atmospheric pressure; and holding the graphene element and dopant at an elevated temperature, higher than ambient temperature, for a period of time whilst under the low pressure conditions; wherein the openings extend only through some of the layers of the graphene element, and A wherein the element has an area of at least 1 cm 2 Currently amended
14-15. Cancelled. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
large-area multi-layered doped graphene element
Materials described outside the worked examples.
multi-layered graphene
iron (III) chloride
FeCl₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 cm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,053,772Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 a-t o 1 d are -diagrammatic representations-illustrating steps-in the-process for forming a doped relativelylarge-area-multilayer graphene-element in -accordance with- one embodiment of-the invention; [003 0] A relatively large area, multi-layered graphene element 10 is illustrated in …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a uniformly or substantially uniformly doped area multi-layered graphene element comprising the steps of: forming openings in a multi-layered graphene element of large area; placing the graphene element and a dopant under low pressure conditions, lower than atmospheric pressure; and holding the graphene element and dopant at an elevated temperature, higher than ambient temperature, for a period of time whilst under the low pressure conditions; wherein the openings extend only through some of the layers of the graphene element. Currently amended
A method according to Claim 1, wherein the openings are formed by drilling. Original
A method according to Claim 1, wherein the openings are formed by etching. Original
A method according to Claim 1, wherein the dopant comprises iron (III) chloride. Previously presented
A method according to Claim 1, wherein the dopant comprises a precursor for subsequent substitution with another dopant. Previously presented
A method according to Claim 1, wherein the element is formed by the transfer of monolayer C V D deposited graphene layers. Previously presented
A method according to Claim 1, wherein the element comprises a multi-layer CVD deposited layer transferred onto a substrate. Previously presented
A method according to Claim 1, wherein the elevated temperature is around 300 ° C, and the element is held at the elevated temperature for at least 5 hours. Previously presented
. Canceled
. Canceled
A method of producing a uniformly or substantially uniformly doped large area multi-layered graphene element comprising the steps of: forming openings in a multi-layered graphene element of large area; placing the graphene element and a dopant under low pressure conditions, lower than atmospheric pressure; and holding the graphene element and dopant at an elevated temperature, higher than ambient temperature, for a period of time whilst under the low pressure conditions; wherein the openings extend only through some of the layers of the graphene element, and A wherein the element has an area of at least 1 cm 2 Currently amended
14-15. Cancelled. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
large-area multi-layered doped graphene element
Materials described outside the worked examples.
multi-layered graphene
iron (III) chloride
FeCl₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 cm | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
aluminum chloride
AlCl₃
polycrystalline copper foil
silicon wafer
polycrystalline nickel foil
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aluminum chloride
AlCl₃
polycrystalline copper foil
silicon wafer
polycrystalline nickel foil
| — |
aluminum chloride
AlCl₃
polycrystalline copper foil
silicon wafer
polycrystalline nickel foil
| — |
aluminum chloride
AlCl₃
polycrystalline copper foil
silicon wafer
polycrystalline nickel foil
| — |