Patent
US 8,488,641Title: I I -VI MQW VCSEL ON A HEAT SINK OPTICALLY PUMPED BY A GAN LD
Michael A. Haase, Thomas J. Miller, Xiaoguang Sun
3M Innovative Properties Company·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,488,641Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic side-view of a light source;
FIG. 2 is a schematic side-view of a light source that includes an array of discrete light sources; 20
FIG. 3C. Heat sink 105 includes a material with a high thermal conductivity such as a metal. The attachment may be made using any suitable method, such as …
FIG. 4 is a schematic side-view of another light source;
FIG. 5 is a schematic side-view of another light source;
FIG. 6 is a schematic side-view of a light emitting system; and 25
FIG. 7 is a schematic view of a light pointer. The same reference numeral used in multiple figures refers to the same or similar elements having the same or …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Orig in al) The li ght source of claim 2, where in the heat s in k is substantially transmissive at the first wavelength 2 3M 1525525 v1 Application No 13/060554 Case No 64116US006 5 (Orig in al) The li ght source of claim 1, where in the VCSEL further comprises a li ght reflect in g metal layer substantially reflective at the second wavelength and disposed directly on a heat s ink 6 (Orig in al) The li ght source of claim 1, where in the first multilayer stack is disposed on a li ght reflect in g metal layer 7 (Orig in al) The li ght source of claim 1, where in at least one of the first and second multilayer stacks is a Bragg reflector comp nsin g at least one o f S 10 2, S 1 3N4, T₁O 2, Ta₂ 05, MgF2, CaF2, and Hf O₂ 8 (Orig in al) The li ght source of claim 1, where in at least one of the first and second multilayer stacks is a Bragg reflector comp nsin g a 1I -VI compound 9-14
canceled
canceled
canceled
canceled
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack comp n ses a quantum well stack hav in g a plura li ty of alternat in g quantum well and li ght absorb in g layers 16-18
canceled
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack further comp n ses a first w in dow construction hav in g a band gap energy greater than an energy of a photon at the first wavelength 20-21
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack is lattice matched to InP Application No 13/060554 Case No 64116US006 23 (Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack comp n ses first and second quantum wells separated by a distance of about half of the second wavelength in a medium separat in g the two quantum wells
A li ght source compris ing a III -V semiconductor based pump li ght source compris in g N and emitt ing li ght at a first wavelength, an optical assembly convert in g at least a portion of the first wavelength li ght emitted by the pump li ght source to at least a partially coherent li ght at a second wavelength, the optical assembly compris ing first and second mirrors form in g an optical cavity for li ght at the second wavelength, the first mirror be in g substantially reflective at the second wavelength and comp nsin g a first multilayer stack, the second mirror be in g partially reflective at the second wavelength, and a 1I -VI semiconductor multilayer stack disposed between the first and second mirrors and convert in g at least a portion of the first wavelength li ght to the second wavelength li ght, the semiconductor multilayer stack compris in g a quantum well comp nsing d(Mg)Z-e CdM g ZnSe and further co m pris ing an absorb ing lay er proximate the potential well, the absorb ing lay er co m pris ing CdM g ZnSe 26 The li ght source of claim 25, where in the optical assembly comp n ses an air gap between the first and second mirrors, and where in at least one of the first and second mirrors is spaced apart from the semiconductor multilayer stack 27-28
(Orig in al) The li ght source of claim 25, where ght reflect in g metal layer substantially reflective Application No 13/060554 Case No 64116US006 where in the second mirror is partially transmissive
(Orig in al) The li ght source of claim 25, where source comp n ses a laser diode
canceled in the first multilayer stack is disposed on a li at the second wavelength 4 3M 1525525 v1 30 (Orig in al) The li ght source of claim 25, at the second wavelength in the III -V semiconductor based pump li ght li ght source of claim 25 35-37
canceled
canceled
(Orig in al) A li ght po in ter comp nsin g the
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
II-VI MQW VCSEL on heat sink optically pumped by III-V pump (claim 1 family)
II-VI MQW VCSEL optically pumped by III-V pump (claim 25 family)
Materials described outside the worked examples.
Cd(Mg)ZnSe
CdMgZnSe
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 350–500 nm | — |
Thickness | 2–35 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,488,641Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic side-view of a light source;
FIG. 2 is a schematic side-view of a light source that includes an array of discrete light sources; 20
FIG. 3C. Heat sink 105 includes a material with a high thermal conductivity such as a metal. The attachment may be made using any suitable method, such as …
FIG. 4 is a schematic side-view of another light source;
FIG. 5 is a schematic side-view of another light source;
FIG. 6 is a schematic side-view of a light emitting system; and 25
FIG. 7 is a schematic view of a light pointer. The same reference numeral used in multiple figures refers to the same or similar elements having the same or …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Orig in al) The li ght source of claim 2, where in the heat s in k is substantially transmissive at the first wavelength 2 3M 1525525 v1 Application No 13/060554 Case No 64116US006 5 (Orig in al) The li ght source of claim 1, where in the VCSEL further comprises a li ght reflect in g metal layer substantially reflective at the second wavelength and disposed directly on a heat s ink 6 (Orig in al) The li ght source of claim 1, where in the first multilayer stack is disposed on a li ght reflect in g metal layer 7 (Orig in al) The li ght source of claim 1, where in at least one of the first and second multilayer stacks is a Bragg reflector comp nsin g at least one o f S 10 2, S 1 3N4, T₁O 2, Ta₂ 05, MgF2, CaF2, and Hf O₂ 8 (Orig in al) The li ght source of claim 1, where in at least one of the first and second multilayer stacks is a Bragg reflector comp nsin g a 1I -VI compound 9-14
canceled
canceled
canceled
canceled
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack comp n ses a quantum well stack hav in g a plura li ty of alternat in g quantum well and li ght absorb in g layers 16-18
canceled
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack further comp n ses a first w in dow construction hav in g a band gap energy greater than an energy of a photon at the first wavelength 20-21
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack is lattice matched to InP Application No 13/060554 Case No 64116US006 23 (Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack comp n ses first and second quantum wells separated by a distance of about half of the second wavelength in a medium separat in g the two quantum wells
A li ght source compris ing a III -V semiconductor based pump li ght source compris in g N and emitt ing li ght at a first wavelength, an optical assembly convert in g at least a portion of the first wavelength li ght emitted by the pump li ght source to at least a partially coherent li ght at a second wavelength, the optical assembly compris ing first and second mirrors form in g an optical cavity for li ght at the second wavelength, the first mirror be in g substantially reflective at the second wavelength and comp nsin g a first multilayer stack, the second mirror be in g partially reflective at the second wavelength, and a 1I -VI semiconductor multilayer stack disposed between the first and second mirrors and convert in g at least a portion of the first wavelength li ght to the second wavelength li ght, the semiconductor multilayer stack compris in g a quantum well comp nsing d(Mg)Z-e CdM g ZnSe and further co m pris ing an absorb ing lay er proximate the potential well, the absorb ing lay er co m pris ing CdM g ZnSe 26 The li ght source of claim 25, where in the optical assembly comp n ses an air gap between the first and second mirrors, and where in at least one of the first and second mirrors is spaced apart from the semiconductor multilayer stack 27-28
(Orig in al) The li ght source of claim 25, where ght reflect in g metal layer substantially reflective Application No 13/060554 Case No 64116US006 where in the second mirror is partially transmissive
(Orig in al) The li ght source of claim 25, where source comp n ses a laser diode
canceled in the first multilayer stack is disposed on a li at the second wavelength 4 3M 1525525 v1 30 (Orig in al) The li ght source of claim 25, at the second wavelength in the III -V semiconductor based pump li ght li ght source of claim 25 35-37
canceled
canceled
(Orig in al) A li ght po in ter comp nsin g the
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
II-VI MQW VCSEL on heat sink optically pumped by III-V pump (claim 1 family)
II-VI MQW VCSEL optically pumped by III-V pump (claim 25 family)
Materials described outside the worked examples.
Cd(Mg)ZnSe
CdMgZnSe
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 350–500 nm | — |
Thickness | 2–35 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,488,641Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic side-view of a light source;
FIG. 2 is a schematic side-view of a light source that includes an array of discrete light sources; 20
FIG. 3C. Heat sink 105 includes a material with a high thermal conductivity such as a metal. The attachment may be made using any suitable method, such as …
FIG. 4 is a schematic side-view of another light source;
FIG. 5 is a schematic side-view of another light source;
FIG. 6 is a schematic side-view of a light emitting system; and 25
FIG. 7 is a schematic view of a light pointer. The same reference numeral used in multiple figures refers to the same or similar elements having the same or …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Orig in al) The li ght source of claim 2, where in the heat s in k is substantially transmissive at the first wavelength 2 3M 1525525 v1 Application No 13/060554 Case No 64116US006 5 (Orig in al) The li ght source of claim 1, where in the VCSEL further comprises a li ght reflect in g metal layer substantially reflective at the second wavelength and disposed directly on a heat s ink 6 (Orig in al) The li ght source of claim 1, where in the first multilayer stack is disposed on a li ght reflect in g metal layer 7 (Orig in al) The li ght source of claim 1, where in at least one of the first and second multilayer stacks is a Bragg reflector comp nsin g at least one o f S 10 2, S 1 3N4, T₁O 2, Ta₂ 05, MgF2, CaF2, and Hf O₂ 8 (Orig in al) The li ght source of claim 1, where in at least one of the first and second multilayer stacks is a Bragg reflector comp nsin g a 1I -VI compound 9-14
canceled
canceled
canceled
canceled
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack comp n ses a quantum well stack hav in g a plura li ty of alternat in g quantum well and li ght absorb in g layers 16-18
canceled
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack further comp n ses a first w in dow construction hav in g a band gap energy greater than an energy of a photon at the first wavelength 20-21
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack is lattice matched to InP Application No 13/060554 Case No 64116US006 23 (Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack comp n ses first and second quantum wells separated by a distance of about half of the second wavelength in a medium separat in g the two quantum wells
A li ght source compris ing a III -V semiconductor based pump li ght source compris in g N and emitt ing li ght at a first wavelength, an optical assembly convert in g at least a portion of the first wavelength li ght emitted by the pump li ght source to at least a partially coherent li ght at a second wavelength, the optical assembly compris ing first and second mirrors form in g an optical cavity for li ght at the second wavelength, the first mirror be in g substantially reflective at the second wavelength and comp nsin g a first multilayer stack, the second mirror be in g partially reflective at the second wavelength, and a 1I -VI semiconductor multilayer stack disposed between the first and second mirrors and convert in g at least a portion of the first wavelength li ght to the second wavelength li ght, the semiconductor multilayer stack compris in g a quantum well comp nsing d(Mg)Z-e CdM g ZnSe and further co m pris ing an absorb ing lay er proximate the potential well, the absorb ing lay er co m pris ing CdM g ZnSe 26 The li ght source of claim 25, where in the optical assembly comp n ses an air gap between the first and second mirrors, and where in at least one of the first and second mirrors is spaced apart from the semiconductor multilayer stack 27-28
(Orig in al) The li ght source of claim 25, where ght reflect in g metal layer substantially reflective Application No 13/060554 Case No 64116US006 where in the second mirror is partially transmissive
(Orig in al) The li ght source of claim 25, where source comp n ses a laser diode
canceled in the first multilayer stack is disposed on a li at the second wavelength 4 3M 1525525 v1 30 (Orig in al) The li ght source of claim 25, at the second wavelength in the III -V semiconductor based pump li ght li ght source of claim 25 35-37
canceled
canceled
(Orig in al) A li ght po in ter comp nsin g the
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
II-VI MQW VCSEL on heat sink optically pumped by III-V pump (claim 1 family)
II-VI MQW VCSEL optically pumped by III-V pump (claim 25 family)
Materials described outside the worked examples.
Cd(Mg)ZnSe
CdMgZnSe
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 350–500 nm | — |
Thickness | 2–35 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,488,641Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic side-view of a light source;
FIG. 2 is a schematic side-view of a light source that includes an array of discrete light sources; 20
FIG. 3C. Heat sink 105 includes a material with a high thermal conductivity such as a metal. The attachment may be made using any suitable method, such as …
FIG. 4 is a schematic side-view of another light source;
FIG. 5 is a schematic side-view of another light source;
FIG. 6 is a schematic side-view of a light emitting system; and 25
FIG. 7 is a schematic view of a light pointer. The same reference numeral used in multiple figures refers to the same or similar elements having the same or …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Orig in al) The li ght source of claim 2, where in the heat s in k is substantially transmissive at the first wavelength 2 3M 1525525 v1 Application No 13/060554 Case No 64116US006 5 (Orig in al) The li ght source of claim 1, where in the VCSEL further comprises a li ght reflect in g metal layer substantially reflective at the second wavelength and disposed directly on a heat s ink 6 (Orig in al) The li ght source of claim 1, where in the first multilayer stack is disposed on a li ght reflect in g metal layer 7 (Orig in al) The li ght source of claim 1, where in at least one of the first and second multilayer stacks is a Bragg reflector comp nsin g at least one o f S 10 2, S 1 3N4, T₁O 2, Ta₂ 05, MgF2, CaF2, and Hf O₂ 8 (Orig in al) The li ght source of claim 1, where in at least one of the first and second multilayer stacks is a Bragg reflector comp nsin g a 1I -VI compound 9-14
canceled
canceled
canceled
canceled
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack comp n ses a quantum well stack hav in g a plura li ty of alternat in g quantum well and li ght absorb in g layers 16-18
canceled
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack further comp n ses a first w in dow construction hav in g a band gap energy greater than an energy of a photon at the first wavelength 20-21
canceled
canceled
(Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack is lattice matched to InP Application No 13/060554 Case No 64116US006 23 (Orig in al) The li ght source of claim 1, where in the semiconductor multilayer stack comp n ses first and second quantum wells separated by a distance of about half of the second wavelength in a medium separat in g the two quantum wells
A li ght source compris ing a III -V semiconductor based pump li ght source compris in g N and emitt ing li ght at a first wavelength, an optical assembly convert in g at least a portion of the first wavelength li ght emitted by the pump li ght source to at least a partially coherent li ght at a second wavelength, the optical assembly compris ing first and second mirrors form in g an optical cavity for li ght at the second wavelength, the first mirror be in g substantially reflective at the second wavelength and comp nsin g a first multilayer stack, the second mirror be in g partially reflective at the second wavelength, and a 1I -VI semiconductor multilayer stack disposed between the first and second mirrors and convert in g at least a portion of the first wavelength li ght to the second wavelength li ght, the semiconductor multilayer stack compris in g a quantum well comp nsing d(Mg)Z-e CdM g ZnSe and further co m pris ing an absorb ing lay er proximate the potential well, the absorb ing lay er co m pris ing CdM g ZnSe 26 The li ght source of claim 25, where in the optical assembly comp n ses an air gap between the first and second mirrors, and where in at least one of the first and second mirrors is spaced apart from the semiconductor multilayer stack 27-28
(Orig in al) The li ght source of claim 25, where ght reflect in g metal layer substantially reflective Application No 13/060554 Case No 64116US006 where in the second mirror is partially transmissive
(Orig in al) The li ght source of claim 25, where source comp n ses a laser diode
canceled in the first multilayer stack is disposed on a li at the second wavelength 4 3M 1525525 v1 30 (Orig in al) The li ght source of claim 25, at the second wavelength in the III -V semiconductor based pump li ght li ght source of claim 25 35-37
canceled
canceled
(Orig in al) A li ght po in ter comp nsin g the
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
II-VI MQW VCSEL on heat sink optically pumped by III-V pump (claim 1 family)
II-VI MQW VCSEL optically pumped by III-V pump (claim 25 family)
Materials described outside the worked examples.
Cd(Mg)ZnSe
CdMgZnSe
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 350–500 nm | — |
Thickness | 2–35 nm |
Related documents with shared materials, methods, properties, or citations.
II-VI semiconductor
III-V semiconductor (N-containing)
Bragg reflector dielectrics
InP
SiO₂
Si₃N₄
TiO₂
Ta₂O₅
MgF₂
CaF₂
HfO₂
ZnSeTe
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |
II-VI semiconductor
III-V semiconductor (N-containing)
Bragg reflector dielectrics
InP
SiO₂
Si₃N₄
TiO₂
Ta₂O₅
MgF₂
CaF₂
HfO₂
ZnSeTe
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |
II-VI semiconductor
III-V semiconductor (N-containing)
Bragg reflector dielectrics
InP
SiO₂
Si₃N₄
TiO₂
Ta₂O₅
MgF₂
CaF₂
HfO₂
ZnSeTe
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |
II-VI semiconductor
III-V semiconductor (N-containing)
Bragg reflector dielectrics
InP
SiO₂
Si₃N₄
TiO₂
Ta₂O₅
MgF₂
CaF₂
HfO₂
ZnSeTe
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |