Patent
US 10,591,230carbon filler/reinforcement phase
surface coating with high emissivity
surface coating selected from aluminum oxide, zinc oxide, aluminum nitride, titanium oxide, boron nitride, silicon carbide, silicon nitride, gallium nitride
metal or ceramic nanoparticles surface coating
graphene oxide gel
FIG. 3(c) Schematic drawing and an attendant SEM image to illustrate the formation process of a unitary graphene entity or graphene single crystal that is …
Oxygen Content | 0.001–10 % | unitary graphene matrix material |
Degree Of Graphitization | 1–100 % | unitary graphene matrix material |
Thermal Conductivity | 600–1800 W/mK | unitary graphene matrix material |
Porosity | 0–5 % | unitary graphene matrix material |
Electrical Conductivity | 1500–25000 S/cm | unitary graphene matrix material |
Tensile Strength | 32–200 MPa | unitary graphene matrix material |
Flexural Strength | 32–200 MPa | unitary graphene matrix material |
Rockwell Hardness R Scale | 60–80 HRR | unitary graphene matrix material |
Mosaic Spread | 0.4–0.7 | unitary graphene matrix material |
graphite single crystal basal plane (background reference) | ≤ 1800 W/mK | — |
Temperature | 1250–2000 °C | — |
Temperature | 500–1250 °C | — |
Duration | 15–120 s | — |
Duration | 900–7200 s | — |
Temperature | 700–2800 °C | — |
Duration | 0.2–1 hour | — |
Duration | 1–5 hours | — |
— | 237–582 W | — |
— | 983–1807 W | — |
— | 800–1800 W | — |
Pressure | 22–43 MPa | — |
Thickness | 0.6–1 nm | — |
— | 1400–1500 W | — |
Duration | 1–4 hours | — |
Duration | 1–2 hours | — |
Duration | 0.5–2 hours | — |
Temperature | 800–1050 °C | — |
— | 140–300 W | — |
— | 10–30 W | — |
Temperature | 0–60 °C | — |
Duration | 1–3 hours | — |
Temperature | 3000–3250 °C | — |
Temperature | 100–500 °C | — |
Pressure | 40–140 MPa | — |
Temperature | 2500–3000 °C | — |
Temperature | 2800–3200 °C | — |
— | 1600–1700 W | — |
Temperature | 1000–1500 °C | — |
Thickness | ≤ 0.344 nm | — |
Temperature | ≤ 2000 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 2 nm | — |
— | ≤ 500 W | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 10 nm | — |
— | ≤ 0.1 ev | — |
Thickness | ≤ 0.4 nm | — |
— | ≤ 1 W | — |
— | ≤ 237 W | — |
— | ≤ 800 W | — |
— | ≤ 600 W | — |
Pressure | ≤ 20 MPa | — |
— | ≥ 1680 W | — |
— | ≥ 1800 W | — |
Thickness | ≥ 1 nm | — |
Temperature | ≥ 500 °C | — |
Temperature | ≥ 1250 °C | — |
Temperature | ≥ 2000 °C | — |
— | ≥ 800 W | — |
— | ≥ 1 W | — |
— | ≥ 1700 W | — |
— | ≥ 600 W | — |
Pressure | ≥ 40 MPa | — |
Pressure | ≥ 80 MPa | — |
Pressure | ≥ 120 MPa | — |
Thickness | ≥ 0.4 nm | — |
Temperature | ≥ 1 °C | — |
Temperature | ≥ 2500 °C | — |
— | ≥ 420 W | — |
— | ≥ 950 W | — |
Pressure | ≥ 1 MPa | — |
Thickness | 0.3354–0.337 nm | — |
Thickness | 0.4–1 nm | — |
— | 100–450 W | — |
Thickness | ≤ 1 cm | — |
— | ≤ 300 W | — |
Thickness | ≥ 0.344 nm | — |
Thickness | ≥ 1 cm | — |
— | ≥ 1500 W | — |
Pressure | ≥ 150 MPa | — |
carbon filler/reinforcement phase
surface coating with high emissivity
surface coating selected from aluminum oxide, zinc oxide, aluminum nitride, titanium oxide, boron nitride, silicon carbide, silicon nitride, gallium nitride
metal or ceramic nanoparticles surface coating
graphene oxide gel
FIG. 3(c) Schematic drawing and an attendant SEM image to illustrate the formation process of a unitary graphene entity or graphene single crystal that is …
Oxygen Content | 0.001–10 % | unitary graphene matrix material |
Degree Of Graphitization | 1–100 % | unitary graphene matrix material |
Thermal Conductivity | 600–1800 W/mK | unitary graphene matrix material |
Porosity | 0–5 % | unitary graphene matrix material |
Electrical Conductivity | 1500–25000 S/cm | unitary graphene matrix material |
Tensile Strength | 32–200 MPa | unitary graphene matrix material |
Flexural Strength | 32–200 MPa | unitary graphene matrix material |
Rockwell Hardness R Scale | 60–80 HRR | unitary graphene matrix material |
Mosaic Spread | 0.4–0.7 | unitary graphene matrix material |
graphite single crystal basal plane (background reference) | ≤ 1800 W/mK | — |
Temperature | 1250–2000 °C | — |
Temperature | 500–1250 °C | — |
Duration | 15–120 s | — |
Duration | 900–7200 s | — |
Temperature | 700–2800 °C | — |
Duration | 0.2–1 hour | — |
Duration | 1–5 hours | — |
— | 237–582 W | — |
— | 983–1807 W | — |
— | 800–1800 W | — |
Pressure | 22–43 MPa | — |
Thickness | 0.6–1 nm | — |
— | 1400–1500 W | — |
Duration | 1–4 hours | — |
Duration | 1–2 hours | — |
Duration | 0.5–2 hours | — |
Temperature | 800–1050 °C | — |
— | 140–300 W | — |
— | 10–30 W | — |
Temperature | 0–60 °C | — |
Duration | 1–3 hours | — |
Temperature | 3000–3250 °C | — |
Temperature | 100–500 °C | — |
Pressure | 40–140 MPa | — |
Temperature | 2500–3000 °C | — |
Temperature | 2800–3200 °C | — |
— | 1600–1700 W | — |
Temperature | 1000–1500 °C | — |
Thickness | ≤ 0.344 nm | — |
Temperature | ≤ 2000 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 2 nm | — |
— | ≤ 500 W | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 10 nm | — |
— | ≤ 0.1 ev | — |
Thickness | ≤ 0.4 nm | — |
— | ≤ 1 W | — |
— | ≤ 237 W | — |
— | ≤ 800 W | — |
— | ≤ 600 W | — |
Pressure | ≤ 20 MPa | — |
— | ≥ 1680 W | — |
— | ≥ 1800 W | — |
Thickness | ≥ 1 nm | — |
Temperature | ≥ 500 °C | — |
Temperature | ≥ 1250 °C | — |
Temperature | ≥ 2000 °C | — |
— | ≥ 800 W | — |
— | ≥ 1 W | — |
— | ≥ 1700 W | — |
— | ≥ 600 W | — |
Pressure | ≥ 40 MPa | — |
Pressure | ≥ 80 MPa | — |
Pressure | ≥ 120 MPa | — |
Thickness | ≥ 0.4 nm | — |
Temperature | ≥ 1 °C | — |
Temperature | ≥ 2500 °C | — |
— | ≥ 420 W | — |
— | ≥ 950 W | — |
Pressure | ≥ 1 MPa | — |
Thickness | 0.3354–0.337 nm | — |
Thickness | 0.4–1 nm | — |
— | 100–450 W | — |
Thickness | ≤ 1 cm | — |
— | ≤ 300 W | — |
Thickness | ≥ 0.344 nm | — |
Thickness | ≥ 1 cm | — |
— | ≥ 1500 W | — |
Pressure | ≥ 150 MPa | — |
carbon filler/reinforcement phase
surface coating with high emissivity
surface coating selected from aluminum oxide, zinc oxide, aluminum nitride, titanium oxide, boron nitride, silicon carbide, silicon nitride, gallium nitride
metal or ceramic nanoparticles surface coating
graphene oxide gel
FIG. 3(c) Schematic drawing and an attendant SEM image to illustrate the formation process of a unitary graphene entity or graphene single crystal that is …
Oxygen Content | 0.001–10 % | unitary graphene matrix material |
Degree Of Graphitization | 1–100 % | unitary graphene matrix material |
Thermal Conductivity | 600–1800 W/mK | unitary graphene matrix material |
Porosity | 0–5 % | unitary graphene matrix material |
Electrical Conductivity | 1500–25000 S/cm | unitary graphene matrix material |
Tensile Strength | 32–200 MPa | unitary graphene matrix material |
Flexural Strength | 32–200 MPa | unitary graphene matrix material |
Rockwell Hardness R Scale | 60–80 HRR | unitary graphene matrix material |
Mosaic Spread | 0.4–0.7 | unitary graphene matrix material |
graphite single crystal basal plane (background reference) | ≤ 1800 W/mK | — |
Temperature | 1250–2000 °C | — |
Temperature | 500–1250 °C | — |
Duration | 15–120 s | — |
Duration | 900–7200 s | — |
Temperature | 700–2800 °C | — |
Duration | 0.2–1 hour | — |
Duration | 1–5 hours | — |
— | 237–582 W | — |
— | 983–1807 W | — |
— | 800–1800 W | — |
Pressure | 22–43 MPa | — |
Thickness | 0.6–1 nm | — |
— | 1400–1500 W | — |
Duration | 1–4 hours | — |
Duration | 1–2 hours | — |
Duration | 0.5–2 hours | — |
Temperature | 800–1050 °C | — |
— | 140–300 W | — |
— | 10–30 W | — |
Temperature | 0–60 °C | — |
Duration | 1–3 hours | — |
Temperature | 3000–3250 °C | — |
Temperature | 100–500 °C | — |
Pressure | 40–140 MPa | — |
Temperature | 2500–3000 °C | — |
Temperature | 2800–3200 °C | — |
— | 1600–1700 W | — |
Temperature | 1000–1500 °C | — |
Thickness | ≤ 0.344 nm | — |
Temperature | ≤ 2000 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 2 nm | — |
— | ≤ 500 W | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 10 nm | — |
— | ≤ 0.1 ev | — |
Thickness | ≤ 0.4 nm | — |
— | ≤ 1 W | — |
— | ≤ 237 W | — |
— | ≤ 800 W | — |
— | ≤ 600 W | — |
Pressure | ≤ 20 MPa | — |
— | ≥ 1680 W | — |
— | ≥ 1800 W | — |
Thickness | ≥ 1 nm | — |
Temperature | ≥ 500 °C | — |
Temperature | ≥ 1250 °C | — |
Temperature | ≥ 2000 °C | — |
— | ≥ 800 W | — |
— | ≥ 1 W | — |
— | ≥ 1700 W | — |
— | ≥ 600 W | — |
Pressure | ≥ 40 MPa | — |
Pressure | ≥ 80 MPa | — |
Pressure | ≥ 120 MPa | — |
Thickness | ≥ 0.4 nm | — |
Temperature | ≥ 1 °C | — |
Temperature | ≥ 2500 °C | — |
— | ≥ 420 W | — |
— | ≥ 950 W | — |
Pressure | ≥ 1 MPa | — |
Thickness | 0.3354–0.337 nm | — |
Thickness | 0.4–1 nm | — |
— | 100–450 W | — |
Thickness | ≤ 1 cm | — |
— | ≤ 300 W | — |
Thickness | ≥ 0.344 nm | — |
Thickness | ≥ 1 cm | — |
— | ≥ 1500 W | — |
Pressure | ≥ 150 MPa | — |
carbon filler/reinforcement phase
surface coating with high emissivity
surface coating selected from aluminum oxide, zinc oxide, aluminum nitride, titanium oxide, boron nitride, silicon carbide, silicon nitride, gallium nitride
metal or ceramic nanoparticles surface coating
graphene oxide gel
FIG. 3(c) Schematic drawing and an attendant SEM image to illustrate the formation process of a unitary graphene entity or graphene single crystal that is …
Oxygen Content | 0.001–10 % | unitary graphene matrix material |
Degree Of Graphitization | 1–100 % | unitary graphene matrix material |
Thermal Conductivity | 600–1800 W/mK | unitary graphene matrix material |
Porosity | 0–5 % | unitary graphene matrix material |
Electrical Conductivity | 1500–25000 S/cm | unitary graphene matrix material |
Tensile Strength | 32–200 MPa | unitary graphene matrix material |
Flexural Strength | 32–200 MPa | unitary graphene matrix material |
Rockwell Hardness R Scale | 60–80 HRR | unitary graphene matrix material |
Mosaic Spread | 0.4–0.7 | unitary graphene matrix material |
graphite single crystal basal plane (background reference) | ≤ 1800 W/mK | — |
Temperature | 1250–2000 °C | — |
Temperature | 500–1250 °C | — |
Duration | 15–120 s | — |
Duration | 900–7200 s | — |
Temperature | 700–2800 °C | — |
Duration | 0.2–1 hour | — |
Duration | 1–5 hours | — |
— | 237–582 W | — |
— | 983–1807 W | — |
— | 800–1800 W | — |
Pressure | 22–43 MPa | — |
Thickness | 0.6–1 nm | — |
— | 1400–1500 W | — |
Duration | 1–4 hours | — |
Duration | 1–2 hours | — |
Duration | 0.5–2 hours | — |
Temperature | 800–1050 °C | — |
— | 140–300 W | — |
— | 10–30 W | — |
Temperature | 0–60 °C | — |
Duration | 1–3 hours | — |
Temperature | 3000–3250 °C | — |
Temperature | 100–500 °C | — |
Pressure | 40–140 MPa | — |
Temperature | 2500–3000 °C | — |
Temperature | 2800–3200 °C | — |
— | 1600–1700 W | — |
Temperature | 1000–1500 °C | — |
Thickness | ≤ 0.344 nm | — |
Temperature | ≤ 2000 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 2 nm | — |
— | ≤ 500 W | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 10 nm | — |
— | ≤ 0.1 ev | — |
Thickness | ≤ 0.4 nm | — |
— | ≤ 1 W | — |
— | ≤ 237 W | — |
— | ≤ 800 W | — |
— | ≤ 600 W | — |
Pressure | ≤ 20 MPa | — |
— | ≥ 1680 W | — |
— | ≥ 1800 W | — |
Thickness | ≥ 1 nm | — |
Temperature | ≥ 500 °C | — |
Temperature | ≥ 1250 °C | — |
Temperature | ≥ 2000 °C | — |
— | ≥ 800 W | — |
— | ≥ 1 W | — |
— | ≥ 1700 W | — |
— | ≥ 600 W | — |
Pressure | ≥ 40 MPa | — |
Pressure | ≥ 80 MPa | — |
Pressure | ≥ 120 MPa | — |
Thickness | ≥ 0.4 nm | — |
Temperature | ≥ 1 °C | — |
Temperature | ≥ 2500 °C | — |
— | ≥ 420 W | — |
— | ≥ 950 W | — |
Pressure | ≥ 1 MPa | — |
Thickness | 0.3354–0.337 nm | — |
Thickness | 0.4–1 nm | — |
— | 100–450 W | — |
Thickness | ≤ 1 cm | — |
— | ≤ 300 W | — |
Thickness | ≥ 0.344 nm | — |
Thickness | ≥ 1 cm | — |
— | ≥ 1500 W | — |
Pressure | ≥ 150 MPa | — |