Patent
US 11,152,497VARIABLE RESISTANCE TO REDUCE GATE VOLTAGE OSCILLATIONS IN GALLIUM NITRIDE TRANSISTORS
Jaume ROIG-GUITART
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,152,497Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a GaN transistor with a variable gate-source resistor for enhancing switching stability. [0006]
FIG. 2 is a timing diagram illustrating example voltages applied to the GaN transistor of
FIG. 3 is a diagram illustrating voltage and frequency response characteristics of a resistance value of the variable source-gate resistor of
FIG. 4 is a circuit diagram illustrating an alternate example implementation of the circuit of
FIG. 5 is a dia g ram illustrating an example construction of the circuit of
FIG. 6 is a circuit dia g ram of an alternate example implementation of the circuit of
FIG. 7 is a dia g ram illustrating an example construction of the circuit of
FIG. 8 is a dia g ram illustrating a frequency response of a resistance value of the variable gate resistor of
FIG. 9 is a diagram illustrating an example layout for implementing variations of the circuits of
FIG. 10 is a dia g ram illustrating a current voltage graph for the variable gate-source resistor of
FIG. 11 is a graph illustrating a frequency response of a resistance value of the variable gate-source resistor of
FIG. 12 is a timing diagram illustrating a change in gate source voltage across the GaN transistor of
FIG. 13 is a timing diagram illustrating a change in gate source voltage of the GaN transistor of
FIG. 14A is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 15 is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 16A is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 17 is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 18 is a circuit dia g ram of an alternate implementation of the circuits of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source and configured to switch between an on-voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, wherein the driving voltage oscillates in response to a transition between the on-state and the off-state, and the driving voltage oscillations have a resonance frequency higher than a switching frequency of the driving voltage; and a variable gate-source resistor connected between the gate and the source and having a variable resistance that varies in response to changes in the driving voltage when switching between the on-state and the off-state of the GaN transistor, wherein the variable gate-source resistor includes a resistive dielectric region with a resistivity that varies directly with the driving voltage of the GaN transistor and indirectly with a driving frequency of the driving voltage. Currently amended
The semiconductor transistor device of claim 1, wherein the variable resistance varies directly with a magnitude of the driving voltage within a switching frequency range of the switching. Original
The semiconductor transistor device of claim 1, further comprising a gate resistor connected at the gate of the GaN transistor. Original
(Withdrawn-Currently Amended) The semiconductor transistor device of claim 1, wherein the variable gate-source resistor is configured to maintain the driving voltage oscillations relative to a threshold voltage of the GaN transistor to prevent turn-off of the GaN transistor during the on-state, or turn-on of the GaN transistor during the off-state. Currently amended
. Canceled
(Withdrawn-Currently Amended) The semiconductor transistor device of claim [[4]] 1, wherein the driving voltage switches at a switching frequency, and oscillates in response to a transition between the on-state and the off-state with a resonance frequency higher than the switching frequency, and further wherein the variable gate-source resistor is configured to filter the driving voltage within the resonance frequency. Currently amended
Canceled
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source that switches between an on- First-Named Inventor: Juame ROIG-GUITART Examiner: Mo in M. Rahman voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, wherein the driving voltage oscillates in response to a transition between the on-state and the off-state, the driving voltage oscillations have a resonance frequency higher than a switching frequency of the driving voltage; and a variable gate-source resistor connected between the gate and the source, the variable gate-source resistor including a resistive dielectric region with a resistivity that varies directly with [[a]]the driving voltage of the GaN transistor and indirectly with a driving frequency of the driving voltage and thereby provides a low-pass filter that filters the driving voltage oscillations at the resonance frequency and during a transition between the off-state and the on-state. Currently amended
The semiconductor transistor device of claim 10, further comprising a gate resistor connected at the gate of the GaN transistor. Original
. Canceled
The semiconductor transistor device of claim [[11]] 1 0, wherein [[the]] a resistance value of the variable gate-source resistor is matched to a driving voltage range of the driving voltage, and reaches a maximum value at the on- voltage and a minimum value at the off-voltage. Currently amended
. Canceled
(Withdrawn-Currently Amended) The semiconductor transistor device of claim [[13]] 10, wherein the variable gate-source resistor is configured to pull the driving voltage oscillations to the off-voltage following a transition between the on-state and the off-state. Currently amended
17-20. Canceled
Canceled
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source and configured to switch with a switching frequency between an on-voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, the driving voltage oscillating in response to a transition between the on-state and the off-state, the driving voltage oscillations having a resonance frequency higher than the switching frequency; and a variable gate-source resistor connected between the gate and the source, the variable gate-source resistor including a resistive dielectric region with a resistivity that varies indirectly with a driving frequency of the driving voltage and thereby provide a low-pass filter that filters the driving voltage oscillations at the resonance frequency. Previously presented
The semiconductor transistor device of claim 21, wherein the variable gate-source resistor has a resistance value that varies directly with the driving voltage. Previously presented
The semiconductor transistor device of claim 21, wherein the variable gate-source resistor is configured to maintain the driving voltage oscillations relative to a threshold voltage of the GaN transistor to prevent turn-off of the GaN transistor during the on-state, or turn-on of the GaN transistor during the off-state. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor transistor device with variable gate-source resistor (claim 1 family)
GaN semiconductor transistor device with variable gate-source resistor providing low-pass filter (claim 10 family)
GaN semiconductor transistor device with variable gate-source resistor low-pass filter (claim 21 family)
Materials described outside the worked examples.
resistive dielectric region
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a circuit diagram of a GaN transistor with a variable gate-source resistor for enhancing switching stability. [0006]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 µm | — |
Thickness | 0–2000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,152,497Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a GaN transistor with a variable gate-source resistor for enhancing switching stability. [0006]
FIG. 2 is a timing diagram illustrating example voltages applied to the GaN transistor of
FIG. 3 is a diagram illustrating voltage and frequency response characteristics of a resistance value of the variable source-gate resistor of
FIG. 4 is a circuit diagram illustrating an alternate example implementation of the circuit of
FIG. 5 is a dia g ram illustrating an example construction of the circuit of
FIG. 6 is a circuit dia g ram of an alternate example implementation of the circuit of
FIG. 7 is a dia g ram illustrating an example construction of the circuit of
FIG. 8 is a dia g ram illustrating a frequency response of a resistance value of the variable gate resistor of
FIG. 9 is a diagram illustrating an example layout for implementing variations of the circuits of
FIG. 10 is a dia g ram illustrating a current voltage graph for the variable gate-source resistor of
FIG. 11 is a graph illustrating a frequency response of a resistance value of the variable gate-source resistor of
FIG. 12 is a timing diagram illustrating a change in gate source voltage across the GaN transistor of
FIG. 13 is a timing diagram illustrating a change in gate source voltage of the GaN transistor of
FIG. 14A is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 15 is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 16A is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 17 is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 18 is a circuit dia g ram of an alternate implementation of the circuits of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source and configured to switch between an on-voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, wherein the driving voltage oscillates in response to a transition between the on-state and the off-state, and the driving voltage oscillations have a resonance frequency higher than a switching frequency of the driving voltage; and a variable gate-source resistor connected between the gate and the source and having a variable resistance that varies in response to changes in the driving voltage when switching between the on-state and the off-state of the GaN transistor, wherein the variable gate-source resistor includes a resistive dielectric region with a resistivity that varies directly with the driving voltage of the GaN transistor and indirectly with a driving frequency of the driving voltage. Currently amended
The semiconductor transistor device of claim 1, wherein the variable resistance varies directly with a magnitude of the driving voltage within a switching frequency range of the switching. Original
The semiconductor transistor device of claim 1, further comprising a gate resistor connected at the gate of the GaN transistor. Original
(Withdrawn-Currently Amended) The semiconductor transistor device of claim 1, wherein the variable gate-source resistor is configured to maintain the driving voltage oscillations relative to a threshold voltage of the GaN transistor to prevent turn-off of the GaN transistor during the on-state, or turn-on of the GaN transistor during the off-state. Currently amended
. Canceled
(Withdrawn-Currently Amended) The semiconductor transistor device of claim [[4]] 1, wherein the driving voltage switches at a switching frequency, and oscillates in response to a transition between the on-state and the off-state with a resonance frequency higher than the switching frequency, and further wherein the variable gate-source resistor is configured to filter the driving voltage within the resonance frequency. Currently amended
Canceled
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source that switches between an on- First-Named Inventor: Juame ROIG-GUITART Examiner: Mo in M. Rahman voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, wherein the driving voltage oscillates in response to a transition between the on-state and the off-state, the driving voltage oscillations have a resonance frequency higher than a switching frequency of the driving voltage; and a variable gate-source resistor connected between the gate and the source, the variable gate-source resistor including a resistive dielectric region with a resistivity that varies directly with [[a]]the driving voltage of the GaN transistor and indirectly with a driving frequency of the driving voltage and thereby provides a low-pass filter that filters the driving voltage oscillations at the resonance frequency and during a transition between the off-state and the on-state. Currently amended
The semiconductor transistor device of claim 10, further comprising a gate resistor connected at the gate of the GaN transistor. Original
. Canceled
The semiconductor transistor device of claim [[11]] 1 0, wherein [[the]] a resistance value of the variable gate-source resistor is matched to a driving voltage range of the driving voltage, and reaches a maximum value at the on- voltage and a minimum value at the off-voltage. Currently amended
. Canceled
(Withdrawn-Currently Amended) The semiconductor transistor device of claim [[13]] 10, wherein the variable gate-source resistor is configured to pull the driving voltage oscillations to the off-voltage following a transition between the on-state and the off-state. Currently amended
17-20. Canceled
Canceled
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source and configured to switch with a switching frequency between an on-voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, the driving voltage oscillating in response to a transition between the on-state and the off-state, the driving voltage oscillations having a resonance frequency higher than the switching frequency; and a variable gate-source resistor connected between the gate and the source, the variable gate-source resistor including a resistive dielectric region with a resistivity that varies indirectly with a driving frequency of the driving voltage and thereby provide a low-pass filter that filters the driving voltage oscillations at the resonance frequency. Previously presented
The semiconductor transistor device of claim 21, wherein the variable gate-source resistor has a resistance value that varies directly with the driving voltage. Previously presented
The semiconductor transistor device of claim 21, wherein the variable gate-source resistor is configured to maintain the driving voltage oscillations relative to a threshold voltage of the GaN transistor to prevent turn-off of the GaN transistor during the on-state, or turn-on of the GaN transistor during the off-state. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor transistor device with variable gate-source resistor (claim 1 family)
GaN semiconductor transistor device with variable gate-source resistor providing low-pass filter (claim 10 family)
GaN semiconductor transistor device with variable gate-source resistor low-pass filter (claim 21 family)
Materials described outside the worked examples.
resistive dielectric region
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a circuit diagram of a GaN transistor with a variable gate-source resistor for enhancing switching stability. [0006]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 µm | — |
Thickness | 0–2000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,152,497Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a GaN transistor with a variable gate-source resistor for enhancing switching stability. [0006]
FIG. 2 is a timing diagram illustrating example voltages applied to the GaN transistor of
FIG. 3 is a diagram illustrating voltage and frequency response characteristics of a resistance value of the variable source-gate resistor of
FIG. 4 is a circuit diagram illustrating an alternate example implementation of the circuit of
FIG. 5 is a dia g ram illustrating an example construction of the circuit of
FIG. 6 is a circuit dia g ram of an alternate example implementation of the circuit of
FIG. 7 is a dia g ram illustrating an example construction of the circuit of
FIG. 8 is a dia g ram illustrating a frequency response of a resistance value of the variable gate resistor of
FIG. 9 is a diagram illustrating an example layout for implementing variations of the circuits of
FIG. 10 is a dia g ram illustrating a current voltage graph for the variable gate-source resistor of
FIG. 11 is a graph illustrating a frequency response of a resistance value of the variable gate-source resistor of
FIG. 12 is a timing diagram illustrating a change in gate source voltage across the GaN transistor of
FIG. 13 is a timing diagram illustrating a change in gate source voltage of the GaN transistor of
FIG. 14A is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 15 is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 16A is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 17 is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 18 is a circuit dia g ram of an alternate implementation of the circuits of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source and configured to switch between an on-voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, wherein the driving voltage oscillates in response to a transition between the on-state and the off-state, and the driving voltage oscillations have a resonance frequency higher than a switching frequency of the driving voltage; and a variable gate-source resistor connected between the gate and the source and having a variable resistance that varies in response to changes in the driving voltage when switching between the on-state and the off-state of the GaN transistor, wherein the variable gate-source resistor includes a resistive dielectric region with a resistivity that varies directly with the driving voltage of the GaN transistor and indirectly with a driving frequency of the driving voltage. Currently amended
The semiconductor transistor device of claim 1, wherein the variable resistance varies directly with a magnitude of the driving voltage within a switching frequency range of the switching. Original
The semiconductor transistor device of claim 1, further comprising a gate resistor connected at the gate of the GaN transistor. Original
(Withdrawn-Currently Amended) The semiconductor transistor device of claim 1, wherein the variable gate-source resistor is configured to maintain the driving voltage oscillations relative to a threshold voltage of the GaN transistor to prevent turn-off of the GaN transistor during the on-state, or turn-on of the GaN transistor during the off-state. Currently amended
. Canceled
(Withdrawn-Currently Amended) The semiconductor transistor device of claim [[4]] 1, wherein the driving voltage switches at a switching frequency, and oscillates in response to a transition between the on-state and the off-state with a resonance frequency higher than the switching frequency, and further wherein the variable gate-source resistor is configured to filter the driving voltage within the resonance frequency. Currently amended
Canceled
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source that switches between an on- First-Named Inventor: Juame ROIG-GUITART Examiner: Mo in M. Rahman voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, wherein the driving voltage oscillates in response to a transition between the on-state and the off-state, the driving voltage oscillations have a resonance frequency higher than a switching frequency of the driving voltage; and a variable gate-source resistor connected between the gate and the source, the variable gate-source resistor including a resistive dielectric region with a resistivity that varies directly with [[a]]the driving voltage of the GaN transistor and indirectly with a driving frequency of the driving voltage and thereby provides a low-pass filter that filters the driving voltage oscillations at the resonance frequency and during a transition between the off-state and the on-state. Currently amended
The semiconductor transistor device of claim 10, further comprising a gate resistor connected at the gate of the GaN transistor. Original
. Canceled
The semiconductor transistor device of claim [[11]] 1 0, wherein [[the]] a resistance value of the variable gate-source resistor is matched to a driving voltage range of the driving voltage, and reaches a maximum value at the on- voltage and a minimum value at the off-voltage. Currently amended
. Canceled
(Withdrawn-Currently Amended) The semiconductor transistor device of claim [[13]] 10, wherein the variable gate-source resistor is configured to pull the driving voltage oscillations to the off-voltage following a transition between the on-state and the off-state. Currently amended
17-20. Canceled
Canceled
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source and configured to switch with a switching frequency between an on-voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, the driving voltage oscillating in response to a transition between the on-state and the off-state, the driving voltage oscillations having a resonance frequency higher than the switching frequency; and a variable gate-source resistor connected between the gate and the source, the variable gate-source resistor including a resistive dielectric region with a resistivity that varies indirectly with a driving frequency of the driving voltage and thereby provide a low-pass filter that filters the driving voltage oscillations at the resonance frequency. Previously presented
The semiconductor transistor device of claim 21, wherein the variable gate-source resistor has a resistance value that varies directly with the driving voltage. Previously presented
The semiconductor transistor device of claim 21, wherein the variable gate-source resistor is configured to maintain the driving voltage oscillations relative to a threshold voltage of the GaN transistor to prevent turn-off of the GaN transistor during the on-state, or turn-on of the GaN transistor during the off-state. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor transistor device with variable gate-source resistor (claim 1 family)
GaN semiconductor transistor device with variable gate-source resistor providing low-pass filter (claim 10 family)
GaN semiconductor transistor device with variable gate-source resistor low-pass filter (claim 21 family)
Materials described outside the worked examples.
resistive dielectric region
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a circuit diagram of a GaN transistor with a variable gate-source resistor for enhancing switching stability. [0006]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 µm | — |
Thickness | 0–2000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,152,497Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a GaN transistor with a variable gate-source resistor for enhancing switching stability. [0006]
FIG. 2 is a timing diagram illustrating example voltages applied to the GaN transistor of
FIG. 3 is a diagram illustrating voltage and frequency response characteristics of a resistance value of the variable source-gate resistor of
FIG. 4 is a circuit diagram illustrating an alternate example implementation of the circuit of
FIG. 5 is a dia g ram illustrating an example construction of the circuit of
FIG. 6 is a circuit dia g ram of an alternate example implementation of the circuit of
FIG. 7 is a dia g ram illustrating an example construction of the circuit of
FIG. 8 is a dia g ram illustrating a frequency response of a resistance value of the variable gate resistor of
FIG. 9 is a diagram illustrating an example layout for implementing variations of the circuits of
FIG. 10 is a dia g ram illustrating a current voltage graph for the variable gate-source resistor of
FIG. 11 is a graph illustrating a frequency response of a resistance value of the variable gate-source resistor of
FIG. 12 is a timing diagram illustrating a change in gate source voltage across the GaN transistor of
FIG. 13 is a timing diagram illustrating a change in gate source voltage of the GaN transistor of
FIG. 14A is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 15 is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 16A is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 17 is a circuit dia g ram of an alternate implementation of the circuits of
FIG. 18 is a circuit dia g ram of an alternate implementation of the circuits of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source and configured to switch between an on-voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, wherein the driving voltage oscillates in response to a transition between the on-state and the off-state, and the driving voltage oscillations have a resonance frequency higher than a switching frequency of the driving voltage; and a variable gate-source resistor connected between the gate and the source and having a variable resistance that varies in response to changes in the driving voltage when switching between the on-state and the off-state of the GaN transistor, wherein the variable gate-source resistor includes a resistive dielectric region with a resistivity that varies directly with the driving voltage of the GaN transistor and indirectly with a driving frequency of the driving voltage. Currently amended
The semiconductor transistor device of claim 1, wherein the variable resistance varies directly with a magnitude of the driving voltage within a switching frequency range of the switching. Original
The semiconductor transistor device of claim 1, further comprising a gate resistor connected at the gate of the GaN transistor. Original
(Withdrawn-Currently Amended) The semiconductor transistor device of claim 1, wherein the variable gate-source resistor is configured to maintain the driving voltage oscillations relative to a threshold voltage of the GaN transistor to prevent turn-off of the GaN transistor during the on-state, or turn-on of the GaN transistor during the off-state. Currently amended
. Canceled
(Withdrawn-Currently Amended) The semiconductor transistor device of claim [[4]] 1, wherein the driving voltage switches at a switching frequency, and oscillates in response to a transition between the on-state and the off-state with a resonance frequency higher than the switching frequency, and further wherein the variable gate-source resistor is configured to filter the driving voltage within the resonance frequency. Currently amended
Canceled
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source that switches between an on- First-Named Inventor: Juame ROIG-GUITART Examiner: Mo in M. Rahman voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, wherein the driving voltage oscillates in response to a transition between the on-state and the off-state, the driving voltage oscillations have a resonance frequency higher than a switching frequency of the driving voltage; and a variable gate-source resistor connected between the gate and the source, the variable gate-source resistor including a resistive dielectric region with a resistivity that varies directly with [[a]]the driving voltage of the GaN transistor and indirectly with a driving frequency of the driving voltage and thereby provides a low-pass filter that filters the driving voltage oscillations at the resonance frequency and during a transition between the off-state and the on-state. Currently amended
The semiconductor transistor device of claim 10, further comprising a gate resistor connected at the gate of the GaN transistor. Original
. Canceled
The semiconductor transistor device of claim [[11]] 1 0, wherein [[the]] a resistance value of the variable gate-source resistor is matched to a driving voltage range of the driving voltage, and reaches a maximum value at the on- voltage and a minimum value at the off-voltage. Currently amended
. Canceled
(Withdrawn-Currently Amended) The semiconductor transistor device of claim [[13]] 10, wherein the variable gate-source resistor is configured to pull the driving voltage oscillations to the off-voltage following a transition between the on-state and the off-state. Currently amended
17-20. Canceled
Canceled
A semiconductor transistor device, comprising: a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source and configured to switch with a switching frequency between an on-voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor, the driving voltage oscillating in response to a transition between the on-state and the off-state, the driving voltage oscillations having a resonance frequency higher than the switching frequency; and a variable gate-source resistor connected between the gate and the source, the variable gate-source resistor including a resistive dielectric region with a resistivity that varies indirectly with a driving frequency of the driving voltage and thereby provide a low-pass filter that filters the driving voltage oscillations at the resonance frequency. Previously presented
The semiconductor transistor device of claim 21, wherein the variable gate-source resistor has a resistance value that varies directly with the driving voltage. Previously presented
The semiconductor transistor device of claim 21, wherein the variable gate-source resistor is configured to maintain the driving voltage oscillations relative to a threshold voltage of the GaN transistor to prevent turn-off of the GaN transistor during the on-state, or turn-on of the GaN transistor during the off-state. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor transistor device with variable gate-source resistor (claim 1 family)
GaN semiconductor transistor device with variable gate-source resistor providing low-pass filter (claim 10 family)
GaN semiconductor transistor device with variable gate-source resistor low-pass filter (claim 21 family)
Materials described outside the worked examples.
resistive dielectric region
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a circuit diagram of a GaN transistor with a variable gate-source resistor for enhancing switching stability. [0006]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 µm | — |
Thickness | 0–2000 nm |
Related documents with shared materials, methods, properties, or citations.
GaN enhancement mode HEMT with variable gate-source resistor
GaN transistor with variable gate-source resistor and gate resistor
FIG. 2 is a timing diagram illustrating example voltages applied to the GaN transistor of
FIG. 11 is a graph illustrating a frequency response of a resistance value of the variable gate-source resistor of
FIG. 12 is a timing diagram illustrating a change in gate source voltage across the GaN transistor of
FIG. 13 is a timing diagram illustrating a change in gate source voltage of the GaN transistor of
| — |
Thickness | ≤ 2 µm | — |
Thickness | ≥ 6 um | — |
GaN enhancement mode HEMT with variable gate-source resistor
GaN transistor with variable gate-source resistor and gate resistor
FIG. 2 is a timing diagram illustrating example voltages applied to the GaN transistor of
FIG. 11 is a graph illustrating a frequency response of a resistance value of the variable gate-source resistor of
FIG. 12 is a timing diagram illustrating a change in gate source voltage across the GaN transistor of
FIG. 13 is a timing diagram illustrating a change in gate source voltage of the GaN transistor of
| — |
Thickness | ≤ 2 µm | — |
Thickness | ≥ 6 um | — |
GaN enhancement mode HEMT with variable gate-source resistor
GaN transistor with variable gate-source resistor and gate resistor
FIG. 2 is a timing diagram illustrating example voltages applied to the GaN transistor of
FIG. 11 is a graph illustrating a frequency response of a resistance value of the variable gate-source resistor of
FIG. 12 is a timing diagram illustrating a change in gate source voltage across the GaN transistor of
FIG. 13 is a timing diagram illustrating a change in gate source voltage of the GaN transistor of
| — |
Thickness | ≤ 2 µm | — |
Thickness | ≥ 6 um | — |
GaN enhancement mode HEMT with variable gate-source resistor
GaN transistor with variable gate-source resistor and gate resistor
FIG. 2 is a timing diagram illustrating example voltages applied to the GaN transistor of
FIG. 11 is a graph illustrating a frequency response of a resistance value of the variable gate-source resistor of
FIG. 12 is a timing diagram illustrating a change in gate source voltage across the GaN transistor of
FIG. 13 is a timing diagram illustrating a change in gate source voltage of the GaN transistor of
| — |
Thickness | ≤ 2 µm | — |
Thickness | ≥ 6 um | — |