Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
InAs nanowire heterostructure device with an atomically defined InP segment, transferred onto n-type Si with SiO₂ and contacted by Ni/Au electrodes; measured by AFM/SGM under dark and illuminated conditions.
3 characterizations6 properties6 figures
ExperimentalInAsStudied MaterialInPStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
InAs nanowire heterostructure device with an atomically defined InP segment, transferred onto n-type Si with SiO₂ and contacted by Ni/Au electrodes; measured by AFM/SGM under dark and illuminated conditions.
3 characterizations6 properties6 figures
ExperimentalInAsStudied MaterialInPStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
InAs nanowire heterostructure device with an atomically defined InP segment, transferred onto n-type Si with SiO₂ and contacted by Ni/Au electrodes; measured by AFM/SGM under dark and illuminated conditions.
3 characterizations6 properties6 figures
ExperimentalInAsStudied MaterialInPStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
InAs nanowire heterostructure device with an atomically defined InP segment, transferred onto n-type Si with SiO₂ and contacted by Ni/Au electrodes; measured by AFM/SGM under dark and illuminated conditions.
3 characterizations6 properties6 figures
ExperimentalInAsStudied MaterialInPStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
