Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property3 figures
Related documents with shared materials, methods, properties, or citations.
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD
METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL BY REACTING METAL GALLIUM AND IRON NITRIDE
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Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Universal effect of ammonia pressure on synthesis of colloidal metal nitrides in molten salts
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Fermi velocity, interlayer couplings, and magic angle renormalization in twisted bilayer graphene
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Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property3 figures
Related documents with shared materials, methods, properties, or citations.
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD
METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL BY REACTING METAL GALLIUM AND IRON NITRIDE
BULK GAN CRYSTAL, C-PLANE GAN WAFER, AND METHOD FOR MANUFACTURING BULK GAN CRYSTAL
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Universal effect of ammonia pressure on synthesis of colloidal metal nitrides in molten salts
Anisotropic thermo-mechanical response of layered hexagonal boron nitride and black phosphorus: application as a simultaneous pressure and temperature sensor
Fermi velocity, interlayer couplings, and magic angle renormalization in twisted bilayer graphene
Method of Manufacturing Gallium Nitride Quantum Dots
How transparent is graphene? A surface science perspective on remote epitaxy
Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property3 figures
Related documents with shared materials, methods, properties, or citations.
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD
METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL BY REACTING METAL GALLIUM AND IRON NITRIDE
BULK GAN CRYSTAL, C-PLANE GAN WAFER, AND METHOD FOR MANUFACTURING BULK GAN CRYSTAL
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Universal effect of ammonia pressure on synthesis of colloidal metal nitrides in molten salts
Anisotropic thermo-mechanical response of layered hexagonal boron nitride and black phosphorus: application as a simultaneous pressure and temperature sensor
Fermi velocity, interlayer couplings, and magic angle renormalization in twisted bilayer graphene
Method of Manufacturing Gallium Nitride Quantum Dots
How transparent is graphene? A surface science perspective on remote epitaxy
Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property3 figures
Related documents with shared materials, methods, properties, or citations.
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD
METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL BY REACTING METAL GALLIUM AND IRON NITRIDE
BULK GAN CRYSTAL, C-PLANE GAN WAFER, AND METHOD FOR MANUFACTURING BULK GAN CRYSTAL
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Universal effect of ammonia pressure on synthesis of colloidal metal nitrides in molten salts
Anisotropic thermo-mechanical response of layered hexagonal boron nitride and black phosphorus: application as a simultaneous pressure and temperature sensor
Fermi velocity, interlayer couplings, and magic angle renormalization in twisted bilayer graphene
Method of Manufacturing Gallium Nitride Quantum Dots
How transparent is graphene? A surface science perspective on remote epitaxy
Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets
