Patent
Atlas literature
Patent
US 12,351,943 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view that illustrates an n-type GaN 45 crystal according to one embodiment.
FIG. 2, by performing ω-scan under the above-described conditions along a single line L on the first main surface 11 over a length of 40 mm at 1-mm intervals, a …
FIG. 3, on the first main surface 11 over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained 10 at 40 measurement points that are …
FIG. 4 is a perspective view that illustrates a GaN wafer according to one embodiment.
FIG. 5 may be produced through the steps of completing a c-plane GaN wafer composed of UID-GaN and subsequently growing an ID-GaN layer on the Ga-polar main …
FIG. 6, by performing a ω-scan along a single line L on the first main surface 21 of the wafer 20 over B₂ a length of 40 mm at 1-mm intervals, a (004) XRD …
FIG. 7, over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained at 40 measurement points that are aligned at a pitch of 1 mm on the …
FIG. 8 is a perspective view that illustrates one example of a bilayer GaN wafer. 60
FIG. 9. The procedures were generally as follows. B₂ First, the seed was set on the susceptor.An edge cover was not used. Next, while supplying N2, H₂ and NH₃ …
FIG. 10A. B₂
FIG. 11 is a cross-sectional view illustrating a state where a seed and an edge cover are set on a susceptor.
FIG. 12 was used for growing a GaN crystal by an ammonothermal method. This crystal growth apparatus is provided with an autoclave, and a capsule which is made …
FIG. 13. Next, a second c-plane GaN wafer having a thickness of 0.4 mm was formed by processing the thus grown GaN 50 crystal layer. A Ga-polar surface of the …
FIG. 14 is a drawing that illustrates the constitution of the sample produced in Experiment 6, and the direction of observing a three-photon excitation image …
FIG. 15, when the normal direction of the first main surface 21 is the z-direction and the vector parallel to the c-axis is “vector Vc”, the off-cut angle of …
FIG. 16 is a transmission X-ray topographic image (draw- ing substitute) having a square area of 20 mm×20 mm, which was obtained in Experiment 7 from a c-plane …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An n-type GaN crystal, wherein Ge is a donor impurity contained in the n-type GaN crystal at the highest concentration, and the n-type GaN crystal has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, the two main surfaces each have an area of 3 cm2 or larger, and one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane, and when a (004) XRD rocking curve is measured on the one of the two main surfaces along at least one line over a length of 40 mm at 1-mm intervals, a maximum value of a (004) XRD rocking curve FWHM among all measurement points is 20 arcsec or less.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane, and when a (004) XRD rocking curve is measured on the one of the two main surfaces along each of at least two lines perpendicular to one another over a length of 40 mm at 1-mm intervals, a maximum value of a (004) XRD rocking curve FWHM among all measurement points on each line is 20 arcsec or less.
Layer stacks claimed or described, ordered top of device to substrate.
GaN wafer (single region)
GaN wafer (two-region structure)
Materials described outside the worked examples.
n-type GaN crystal (Ge-doped)
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2, by performing ω-scan under the above-described conditions along a single line L on the first main surface 11 over a length of 40 mm at 1-mm intervals, a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
(004) XRD rocking curve FWHM (claimed upper limit) | ≤ 20 arcsec | GaN |
room-temperature resistivity (claimed upper limit) | ≤ 0.03 Ω·cm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Comprehensive determination of Burgers vectors of threading dislocations in GaN substrates by combining reflection and transmission synchrotron-radiation x-ray topography
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
Patent
Atlas literature
Patent
US 12,351,943 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view that illustrates an n-type GaN 45 crystal according to one embodiment.
FIG. 2, by performing ω-scan under the above-described conditions along a single line L on the first main surface 11 over a length of 40 mm at 1-mm intervals, a …
FIG. 3, on the first main surface 11 over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained 10 at 40 measurement points that are …
FIG. 4 is a perspective view that illustrates a GaN wafer according to one embodiment.
FIG. 5 may be produced through the steps of completing a c-plane GaN wafer composed of UID-GaN and subsequently growing an ID-GaN layer on the Ga-polar main …
FIG. 6, by performing a ω-scan along a single line L on the first main surface 21 of the wafer 20 over B₂ a length of 40 mm at 1-mm intervals, a (004) XRD …
FIG. 7, over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained at 40 measurement points that are aligned at a pitch of 1 mm on the …
FIG. 8 is a perspective view that illustrates one example of a bilayer GaN wafer. 60
FIG. 9. The procedures were generally as follows. B₂ First, the seed was set on the susceptor.An edge cover was not used. Next, while supplying N2, H₂ and NH₃ …
FIG. 10A. B₂
FIG. 11 is a cross-sectional view illustrating a state where a seed and an edge cover are set on a susceptor.
FIG. 12 was used for growing a GaN crystal by an ammonothermal method. This crystal growth apparatus is provided with an autoclave, and a capsule which is made …
FIG. 13. Next, a second c-plane GaN wafer having a thickness of 0.4 mm was formed by processing the thus grown GaN 50 crystal layer. A Ga-polar surface of the …
FIG. 14 is a drawing that illustrates the constitution of the sample produced in Experiment 6, and the direction of observing a three-photon excitation image …
FIG. 15, when the normal direction of the first main surface 21 is the z-direction and the vector parallel to the c-axis is “vector Vc”, the off-cut angle of …
FIG. 16 is a transmission X-ray topographic image (draw- ing substitute) having a square area of 20 mm×20 mm, which was obtained in Experiment 7 from a c-plane …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An n-type GaN crystal, wherein Ge is a donor impurity contained in the n-type GaN crystal at the highest concentration, and the n-type GaN crystal has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, the two main surfaces each have an area of 3 cm2 or larger, and one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane, and when a (004) XRD rocking curve is measured on the one of the two main surfaces along at least one line over a length of 40 mm at 1-mm intervals, a maximum value of a (004) XRD rocking curve FWHM among all measurement points is 20 arcsec or less.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane, and when a (004) XRD rocking curve is measured on the one of the two main surfaces along each of at least two lines perpendicular to one another over a length of 40 mm at 1-mm intervals, a maximum value of a (004) XRD rocking curve FWHM among all measurement points on each line is 20 arcsec or less.
Layer stacks claimed or described, ordered top of device to substrate.
GaN wafer (single region)
GaN wafer (two-region structure)
Materials described outside the worked examples.
n-type GaN crystal (Ge-doped)
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2, by performing ω-scan under the above-described conditions along a single line L on the first main surface 11 over a length of 40 mm at 1-mm intervals, a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
(004) XRD rocking curve FWHM (claimed upper limit) | ≤ 20 arcsec | GaN |
room-temperature resistivity (claimed upper limit) | ≤ 0.03 Ω·cm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Comprehensive determination of Burgers vectors of threading dislocations in GaN substrates by combining reflection and transmission synchrotron-radiation x-ray topography
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
Patent
Atlas literature
Patent
US 12,351,943 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view that illustrates an n-type GaN 45 crystal according to one embodiment.
FIG. 2, by performing ω-scan under the above-described conditions along a single line L on the first main surface 11 over a length of 40 mm at 1-mm intervals, a …
FIG. 3, on the first main surface 11 over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained 10 at 40 measurement points that are …
FIG. 4 is a perspective view that illustrates a GaN wafer according to one embodiment.
FIG. 5 may be produced through the steps of completing a c-plane GaN wafer composed of UID-GaN and subsequently growing an ID-GaN layer on the Ga-polar main …
FIG. 6, by performing a ω-scan along a single line L on the first main surface 21 of the wafer 20 over B₂ a length of 40 mm at 1-mm intervals, a (004) XRD …
FIG. 7, over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained at 40 measurement points that are aligned at a pitch of 1 mm on the …
FIG. 8 is a perspective view that illustrates one example of a bilayer GaN wafer. 60
FIG. 9. The procedures were generally as follows. B₂ First, the seed was set on the susceptor.An edge cover was not used. Next, while supplying N2, H₂ and NH₃ …
FIG. 10A. B₂
FIG. 11 is a cross-sectional view illustrating a state where a seed and an edge cover are set on a susceptor.
FIG. 12 was used for growing a GaN crystal by an ammonothermal method. This crystal growth apparatus is provided with an autoclave, and a capsule which is made …
FIG. 13. Next, a second c-plane GaN wafer having a thickness of 0.4 mm was formed by processing the thus grown GaN 50 crystal layer. A Ga-polar surface of the …
FIG. 14 is a drawing that illustrates the constitution of the sample produced in Experiment 6, and the direction of observing a three-photon excitation image …
FIG. 15, when the normal direction of the first main surface 21 is the z-direction and the vector parallel to the c-axis is “vector Vc”, the off-cut angle of …
FIG. 16 is a transmission X-ray topographic image (draw- ing substitute) having a square area of 20 mm×20 mm, which was obtained in Experiment 7 from a c-plane …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An n-type GaN crystal, wherein Ge is a donor impurity contained in the n-type GaN crystal at the highest concentration, and the n-type GaN crystal has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, the two main surfaces each have an area of 3 cm2 or larger, and one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane, and when a (004) XRD rocking curve is measured on the one of the two main surfaces along at least one line over a length of 40 mm at 1-mm intervals, a maximum value of a (004) XRD rocking curve FWHM among all measurement points is 20 arcsec or less.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane, and when a (004) XRD rocking curve is measured on the one of the two main surfaces along each of at least two lines perpendicular to one another over a length of 40 mm at 1-mm intervals, a maximum value of a (004) XRD rocking curve FWHM among all measurement points on each line is 20 arcsec or less.
Layer stacks claimed or described, ordered top of device to substrate.
GaN wafer (single region)
GaN wafer (two-region structure)
Materials described outside the worked examples.
n-type GaN crystal (Ge-doped)
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2, by performing ω-scan under the above-described conditions along a single line L on the first main surface 11 over a length of 40 mm at 1-mm intervals, a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
(004) XRD rocking curve FWHM (claimed upper limit) | ≤ 20 arcsec | GaN |
room-temperature resistivity (claimed upper limit) | ≤ 0.03 Ω·cm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Comprehensive determination of Burgers vectors of threading dislocations in GaN substrates by combining reflection and transmission synchrotron-radiation x-ray topography
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
Patent
Atlas literature
Patent
US 12,351,943 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view that illustrates an n-type GaN 45 crystal according to one embodiment.
FIG. 2, by performing ω-scan under the above-described conditions along a single line L on the first main surface 11 over a length of 40 mm at 1-mm intervals, a …
FIG. 3, on the first main surface 11 over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained 10 at 40 measurement points that are …
FIG. 4 is a perspective view that illustrates a GaN wafer according to one embodiment.
FIG. 5 may be produced through the steps of completing a c-plane GaN wafer composed of UID-GaN and subsequently growing an ID-GaN layer on the Ga-polar main …
FIG. 6, by performing a ω-scan along a single line L on the first main surface 21 of the wafer 20 over B₂ a length of 40 mm at 1-mm intervals, a (004) XRD …
FIG. 7, over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained at 40 measurement points that are aligned at a pitch of 1 mm on the …
FIG. 8 is a perspective view that illustrates one example of a bilayer GaN wafer. 60
FIG. 9. The procedures were generally as follows. B₂ First, the seed was set on the susceptor.An edge cover was not used. Next, while supplying N2, H₂ and NH₃ …
FIG. 10A. B₂
FIG. 11 is a cross-sectional view illustrating a state where a seed and an edge cover are set on a susceptor.
FIG. 12 was used for growing a GaN crystal by an ammonothermal method. This crystal growth apparatus is provided with an autoclave, and a capsule which is made …
FIG. 13. Next, a second c-plane GaN wafer having a thickness of 0.4 mm was formed by processing the thus grown GaN 50 crystal layer. A Ga-polar surface of the …
FIG. 14 is a drawing that illustrates the constitution of the sample produced in Experiment 6, and the direction of observing a three-photon excitation image …
FIG. 15, when the normal direction of the first main surface 21 is the z-direction and the vector parallel to the c-axis is “vector Vc”, the off-cut angle of …
FIG. 16 is a transmission X-ray topographic image (draw- ing substitute) having a square area of 20 mm×20 mm, which was obtained in Experiment 7 from a c-plane …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An n-type GaN crystal, wherein Ge is a donor impurity contained in the n-type GaN crystal at the highest concentration, and the n-type GaN crystal has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, the two main surfaces each have an area of 3 cm2 or larger, and one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane, and when a (004) XRD rocking curve is measured on the one of the two main surfaces along at least one line over a length of 40 mm at 1-mm intervals, a maximum value of a (004) XRD rocking curve FWHM among all measurement points is 20 arcsec or less.
The n-type GaN crystal according to claim 1, wherein the n-type GaN crystal has two main surfaces facing opposite directions from each other, one of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to a (0001) crystal plane, and when a (004) XRD rocking curve is measured on the one of the two main surfaces along each of at least two lines perpendicular to one another over a length of 40 mm at 1-mm intervals, a maximum value of a (004) XRD rocking curve FWHM among all measurement points on each line is 20 arcsec or less.
Layer stacks claimed or described, ordered top of device to substrate.
GaN wafer (single region)
GaN wafer (two-region structure)
Materials described outside the worked examples.
n-type GaN crystal (Ge-doped)
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2, by performing ω-scan under the above-described conditions along a single line L on the first main surface 11 over a length of 40 mm at 1-mm intervals, a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
(004) XRD rocking curve FWHM (claimed upper limit) | ≤ 20 arcsec | GaN |
room-temperature resistivity (claimed upper limit) | ≤ 0.03 Ω·cm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Comprehensive determination of Burgers vectors of threading dislocations in GaN substrates by combining reflection and transmission synchrotron-radiation x-ray topography
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
FIG. 3, on the first main surface 11 over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained 10 at 40 measurement points that are …
FIG. 6, by performing a ω-scan along a single line L on the first main surface 21 of the wafer 20 over B₂ a length of 40 mm at 1-mm intervals, a (004) XRD …
FIG. 7, over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained at 40 measurement points that are aligned at a pitch of 1 mm on the …
FIG. 13. Next, a second c-plane GaN wafer having a thickness of 0.4 mm was formed by processing the thus grown GaN 50 crystal layer. A Ga-polar surface of the …
FIG. 16 is a transmission X-ray topographic image (draw- ing substitute) having a square area of 20 mm×20 mm, which was obtained in Experiment 7 from a c-plane …
(002) XRD rocking curve FWHM of Si-doped GaN grown by HVPE (background reference) | 32 arcsec | — |
(002) XRD rocking curve FWHM of Ge-doped GaN grown by HVPE (background reference) | 67 arcsec | — |
(200) XRD rocking curve FWHM of m-plane HVPE GaN wafer at center (background reference) | 13 arcsec | — |
Thickness | 5–250 µm | — |
Cited non-patent literature · 6
FIG. 3, on the first main surface 11 over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained 10 at 40 measurement points that are …
FIG. 6, by performing a ω-scan along a single line L on the first main surface 21 of the wafer 20 over B₂ a length of 40 mm at 1-mm intervals, a (004) XRD …
FIG. 7, over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained at 40 measurement points that are aligned at a pitch of 1 mm on the …
FIG. 13. Next, a second c-plane GaN wafer having a thickness of 0.4 mm was formed by processing the thus grown GaN 50 crystal layer. A Ga-polar surface of the …
FIG. 16 is a transmission X-ray topographic image (draw- ing substitute) having a square area of 20 mm×20 mm, which was obtained in Experiment 7 from a c-plane …
(002) XRD rocking curve FWHM of Si-doped GaN grown by HVPE (background reference) | 32 arcsec | — |
(002) XRD rocking curve FWHM of Ge-doped GaN grown by HVPE (background reference) | 67 arcsec | — |
(200) XRD rocking curve FWHM of m-plane HVPE GaN wafer at center (background reference) | 13 arcsec | — |
Thickness | 5–250 µm | — |
Cited non-patent literature · 6
FIG. 3, on the first main surface 11 over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained 10 at 40 measurement points that are …
FIG. 6, by performing a ω-scan along a single line L on the first main surface 21 of the wafer 20 over B₂ a length of 40 mm at 1-mm intervals, a (004) XRD …
FIG. 7, over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained at 40 measurement points that are aligned at a pitch of 1 mm on the …
FIG. 13. Next, a second c-plane GaN wafer having a thickness of 0.4 mm was formed by processing the thus grown GaN 50 crystal layer. A Ga-polar surface of the …
FIG. 16 is a transmission X-ray topographic image (draw- ing substitute) having a square area of 20 mm×20 mm, which was obtained in Experiment 7 from a c-plane …
(002) XRD rocking curve FWHM of Si-doped GaN grown by HVPE (background reference) | 32 arcsec | — |
(002) XRD rocking curve FWHM of Ge-doped GaN grown by HVPE (background reference) | 67 arcsec | — |
(200) XRD rocking curve FWHM of m-plane HVPE GaN wafer at center (background reference) | 13 arcsec | — |
Thickness | 5–250 µm | — |
Cited non-patent literature · 6
FIG. 3, on the first main surface 11 over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained 10 at 40 measurement points that are …
FIG. 6, by performing a ω-scan along a single line L on the first main surface 21 of the wafer 20 over B₂ a length of 40 mm at 1-mm intervals, a (004) XRD …
FIG. 7, over a length of 40 mm at 1-mm intervals, a (004) XRD rocking curve can be obtained at 40 measurement points that are aligned at a pitch of 1 mm on the …
FIG. 13. Next, a second c-plane GaN wafer having a thickness of 0.4 mm was formed by processing the thus grown GaN 50 crystal layer. A Ga-polar surface of the …
FIG. 16 is a transmission X-ray topographic image (draw- ing substitute) having a square area of 20 mm×20 mm, which was obtained in Experiment 7 from a c-plane …
(002) XRD rocking curve FWHM of Si-doped GaN grown by HVPE (background reference) | 32 arcsec | — |
(002) XRD rocking curve FWHM of Ge-doped GaN grown by HVPE (background reference) | 67 arcsec | — |
(200) XRD rocking curve FWHM of m-plane HVPE GaN wafer at center (background reference) | 13 arcsec | — |
Thickness | 5–250 µm | — |
Cited non-patent literature · 6
