Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Yukari Ishikawa; Kisara Matsumoto; Kazuki Ohnishi; Yongzhao Yao

doi:10.48550/arxiv.2606.27744

Paper details

Research paper

Experimental CharacterizationTheoretical

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Yukari Ishikawa, Kisara Matsumoto, Kazuki Ohnishi, Yongzhao Yao

2025·arXiv:2606.27744

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Commercially available 2-inch basic ammonothermal GaN (0001) wafer with a chemically mechanically polished Ga-polar surface; N-polar surface additionally polished by CMP; wafer thickness approximately 340 μm.

2 characterizations2 properties5 figures

ExperimentalGaNStudied Material

Materials

GaN

Studied Material

Also known as

gallium nitrideammonothermal GaN

Variables

polarity= Ga-polar / N-polar

orientation= (0001) wafer

studied material

Characterization

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	wafer thickness	340um	GaN	Commercially available 2-inch basic ammonothermal GaN (0001)		—
Tilt Angle	threading dislocation tilt from c-axis	3.3deg	GaN	Commercially available 2-inch basic ammonothermal GaN (0001)		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	wafer thickness	340um	GaN	Commercially available 2-inch basic ammonothermal GaN (0001)		—
Tilt Angle	threading dislocation tilt from c-axis	3.3deg	GaN	Commercially available 2-inch basic ammonothermal GaN (0001)		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	wafer thickness	340um	GaN	Commercially available 2-inch basic ammonothermal GaN (0001)		—
Tilt Angle	threading dislocation tilt from c-axis	3.3deg	GaN	Commercially available 2-inch basic ammonothermal GaN (0001)		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	wafer thickness	340um	GaN	Commercially available 2-inch basic ammonothermal GaN (0001)		—
Tilt Angle	threading dislocation tilt from c-axis	3.3deg	GaN	Commercially available 2-inch basic ammonothermal GaN (0001)		—

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Samples

Commercially available 2-inch basic ammonothermal GaN (0001) wafer with a chemically mechanically polished Ga-polar surface; N-polar surface additionally polished by CMP; wafer thickness approximately 340 μm.

Materials

Characterization

Why these are connected

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Samples

Commercially available 2-inch basic ammonothermal GaN (0001) wafer with a chemically mechanically polished Ga-polar surface; N-polar surface additionally polished by CMP; wafer thickness approximately 340 μm.

Materials

Characterization

Why these are connected

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Samples

Commercially available 2-inch basic ammonothermal GaN (0001) wafer with a chemically mechanically polished Ga-polar surface; N-polar surface additionally polished by CMP; wafer thickness approximately 340 μm.

Materials

Characterization

Why these are connected

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Samples

Commercially available 2-inch basic ammonothermal GaN (0001) wafer with a chemically mechanically polished Ga-polar surface; N-polar surface additionally polished by CMP; wafer thickness approximately 340 μm.

Materials

Characterization

Why these are connected

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Samples

Commercially available 2-inch basic ammonothermal GaN (0001) wafer with a chemically mechanically polished Ga-polar surface; N-polar surface additionally polished by CMP; wafer thickness approximately 340 μm.

Materials

Characterization

Why these are connected

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Samples

Commercially available 2-inch basic ammonothermal GaN (0001) wafer with a chemically mechanically polished Ga-polar surface; N-polar surface additionally polished by CMP; wafer thickness approximately 340 μm.

Materials

Characterization

Why these are connected

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Samples

Commercially available 2-inch basic ammonothermal GaN (0001) wafer with a chemically mechanically polished Ga-polar surface; N-polar surface additionally polished by CMP; wafer thickness approximately 340 μm.

Materials

Characterization

Why these are connected

Three-dimensional visualization of threading dislocation in GaN by polarized-light microscopy

Samples

Commercially available 2-inch basic ammonothermal GaN (0001) wafer with a chemically mechanically polished Ga-polar surface; N-polar surface additionally polished by CMP; wafer thickness approximately 340 μm.

Materials

Characterization

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations