Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations9 characterizations8 properties7 figures
3 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Surface Potential Difference | Pup vs Pdown | 70mV | — | |||
| Surface Potential Difference | WS₂ surface potential difference across polarization regions | 60mV | — | |||
| PL Peak | A exciton shift | ~50 meV redshiftmeV | — | |||
| Fet On Off Ratio | rectification ratio | 6000 | — | |||
| Optical Band Gap | Δn | 0.7dimensionless | — | |||
| Optical Band Gap | Δk | 0.4dimensionless | — | |||
| Carrier Concentration | unbound carrier density in Pup state | 1313000000000cm⁻² | — | |||
| Carrier Concentration | unbound carrier density in Pdown state | 5231000000000cm⁻² | — | |||
| PL Peak | regex-detected PL peak | 532nm | — | — | — | — |
| Dr Feature Position | B exciton | 530nm | — | — | — | |
| Exciton Binding Energy | exciton binding energy | 0.32eV | — | — | — | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations9 characterizations8 properties7 figures
3 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Surface Potential Difference | Pup vs Pdown | 70mV | — | |||
| Surface Potential Difference | WS₂ surface potential difference across polarization regions | 60mV | — | |||
| PL Peak | A exciton shift | ~50 meV redshiftmeV | — | |||
| Fet On Off Ratio | rectification ratio | 6000 | — | |||
| Optical Band Gap | Δn | 0.7dimensionless | — | |||
| Optical Band Gap | Δk | 0.4dimensionless | — | |||
| Carrier Concentration | unbound carrier density in Pup state | 1313000000000cm⁻² | — | |||
| Carrier Concentration | unbound carrier density in Pdown state | 5231000000000cm⁻² | — | |||
| PL Peak | regex-detected PL peak | 532nm | — | — | — | — |
| Dr Feature Position | B exciton | 530nm | — | — | — | |
| Exciton Binding Energy | exciton binding energy | 0.32eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Temperature-dependent excitonic light manipulation with atomically-thin optical elements
Anomalous optical valley Hall dynamics of exciton-polaritions
Large-Area Deterministic Stamping of 2D Materials on Arbitrarily Patterned Surfaces
Enhanced polariton interactions in suspended WS2 monolayer microcavity
Ultrathin Ga2O3 Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor
Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
Gas pressure manipulation of exciton states in monolayer WS2
Strongly enhanced light-matter coupling of a monolayer WS2 from a bound state in the continuum
High-Temperature Activation of Single-Photon Emitters in monolayer WS2
Efficient electrical switching of exciton states for valley contrast manipulation in two-dimensional perovskite/monolayer WS2 heterostructures
Ultrafast Spatial Hole Burning Dynamics in Monolayer WS2: Insights from Time-resolved Photoluminescence Spectroscopy
Electrical control of valley polarized charged biexcitons in monolayer WS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations9 characterizations8 properties7 figures
3 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Surface Potential Difference | Pup vs Pdown | 70mV | — | |||
| Surface Potential Difference | WS₂ surface potential difference across polarization regions | 60mV | — | |||
| PL Peak | A exciton shift | ~50 meV redshiftmeV | — | |||
| Fet On Off Ratio | rectification ratio | 6000 | — | |||
| Optical Band Gap | Δn | 0.7dimensionless | — | |||
| Optical Band Gap | Δk | 0.4dimensionless | — | |||
| Carrier Concentration | unbound carrier density in Pup state | 1313000000000cm⁻² | — | |||
| Carrier Concentration | unbound carrier density in Pdown state | 5231000000000cm⁻² | — | |||
| PL Peak | regex-detected PL peak | 532nm | — | — | — | — |
| Dr Feature Position | B exciton | 530nm | — | — | — | |
| Exciton Binding Energy | exciton binding energy | 0.32eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Temperature-dependent excitonic light manipulation with atomically-thin optical elements
Anomalous optical valley Hall dynamics of exciton-polaritions
Large-Area Deterministic Stamping of 2D Materials on Arbitrarily Patterned Surfaces
Enhanced polariton interactions in suspended WS2 monolayer microcavity
Ultrathin Ga2O3 Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor
Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
Gas pressure manipulation of exciton states in monolayer WS2
Strongly enhanced light-matter coupling of a monolayer WS2 from a bound state in the continuum
High-Temperature Activation of Single-Photon Emitters in monolayer WS2
Efficient electrical switching of exciton states for valley contrast manipulation in two-dimensional perovskite/monolayer WS2 heterostructures
Ultrafast Spatial Hole Burning Dynamics in Monolayer WS2: Insights from Time-resolved Photoluminescence Spectroscopy
Electrical control of valley polarized charged biexcitons in monolayer WS2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations9 characterizations8 properties7 figures
3 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Surface Potential Difference | Pup vs Pdown | 70mV | — | |||
| Surface Potential Difference | WS₂ surface potential difference across polarization regions | 60mV | — | |||
| PL Peak | A exciton shift | ~50 meV redshiftmeV | — | |||
| Fet On Off Ratio | rectification ratio | 6000 | — | |||
| Optical Band Gap | Δn | 0.7dimensionless | — | |||
| Optical Band Gap | Δk | 0.4dimensionless | — | |||
| Carrier Concentration | unbound carrier density in Pup state | 1313000000000cm⁻² | — | |||
| Carrier Concentration | unbound carrier density in Pdown state | 5231000000000cm⁻² | — | |||
| PL Peak | regex-detected PL peak | 532nm | — | — | — | — |
| Dr Feature Position | B exciton | 530nm | — | — | — | |
| Exciton Binding Energy | exciton binding energy | 0.32eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Temperature-dependent excitonic light manipulation with atomically-thin optical elements
Anomalous optical valley Hall dynamics of exciton-polaritions
Large-Area Deterministic Stamping of 2D Materials on Arbitrarily Patterned Surfaces
Enhanced polariton interactions in suspended WS2 monolayer microcavity
Ultrathin Ga2O3 Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor
Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
Gas pressure manipulation of exciton states in monolayer WS2
Strongly enhanced light-matter coupling of a monolayer WS2 from a bound state in the continuum
High-Temperature Activation of Single-Photon Emitters in monolayer WS2
Efficient electrical switching of exciton states for valley contrast manipulation in two-dimensional perovskite/monolayer WS2 heterostructures
Ultrafast Spatial Hole Burning Dynamics in Monolayer WS2: Insights from Time-resolved Photoluminescence Spectroscopy
Electrical control of valley polarized charged biexcitons in monolayer WS2
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