Ultrathin Ga2O3 Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor

Yun Li; Tinghe Yun; Bohan Wei; Haoran Mu; Luojun Du; Nan Cui; Guangyu Zhang; Shenghuang Lin

doi:10.1038/nnano.2010.279

Paper details

Research paper

Experimental Characterization

Ultrathin Ga₂O₃ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor

Yun Li, Tinghe Yun, Bohan Wei, Haoran Mu et al.

2025

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Ultrathin Ga₂O₃ tunneling film printed from native oxide and transferred for characterization on SiO₂/Si substrate.

2 preparations2 characterizations4 properties2 figures

ExperimentalGa₂O₃Studied Material

Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si.

2 characterizations3 properties2 figures

ExperimentalWS₂Studied Material

Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm SiO₂/Si.

2 preparations5 characterizations11 properties6 figures

ExperimentalGa₂O₃Studied MaterialWS₂Studied MaterialAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric

Materials

Ga₂O₃

Studied Material

Also known as

ultrathin Ga₂O₃amorphous Ga₂O₃

studied material

WS₂

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Ultrathin Ga2O3 Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ dielectric thickness	300nm	SiO₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S	—	—
Film Thickness	Ga₂O₃ tunneling layer thickness	2.6nm	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Layer Count	WS₂ layers	<10	WS₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Pl Peak Shift	exciton energy shift	0.012eV	Ga₂O₃ WS₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Barrier Height	Ga₂O₃/WS₂ tunneling contact barrier height	3.7meV	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Barrier Height	WS₂ Au-contact barrier height	258meV	WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Resistance	contact resistance	2.38kΩ·μm	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Specific Contact Resistivity	specific contact resistivity	3 x 10-5Ω·cm2	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet Mobility	electron mobility	296cm²/Vs	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet On Off Ratio	ON-OFF ratio	1000000	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet Mobility	average mobility in transistor array	200cm²/Vs	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Xps Binding Energy Range	Ga 3d	20.0–21.0eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—
Xps Binding Energy Range	Ga 2p	1117–1118eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—
Xps Binding Energy Range	O 1s	530.1–531eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ dielectric thickness	300nm	SiO₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S	—	—
Film Thickness	Ga₂O₃ tunneling layer thickness	2.6nm	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Layer Count	WS₂ layers	<10	WS₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Pl Peak Shift	exciton energy shift	0.012eV	Ga₂O₃ WS₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Barrier Height	Ga₂O₃/WS₂ tunneling contact barrier height	3.7meV	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Barrier Height	WS₂ Au-contact barrier height	258meV	WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Resistance	contact resistance	2.38kΩ·μm	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Specific Contact Resistivity	specific contact resistivity	3 x 10-5Ω·cm2	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet Mobility	electron mobility	296cm²/Vs	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet On Off Ratio	ON-OFF ratio	1000000	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet Mobility	average mobility in transistor array	200cm²/Vs	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Xps Binding Energy Range	Ga 3d	20.0–21.0eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—
Xps Binding Energy Range	Ga 2p	1117–1118eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—
Xps Binding Energy Range	O 1s	530.1–531eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ dielectric thickness	300nm	SiO₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S	—	—
Film Thickness	Ga₂O₃ tunneling layer thickness	2.6nm	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Layer Count	WS₂ layers	<10	WS₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Pl Peak Shift	exciton energy shift	0.012eV	Ga₂O₃ WS₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Barrier Height	Ga₂O₃/WS₂ tunneling contact barrier height	3.7meV	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Barrier Height	WS₂ Au-contact barrier height	258meV	WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Resistance	contact resistance	2.38kΩ·μm	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Specific Contact Resistivity	specific contact resistivity	3 x 10-5Ω·cm2	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet Mobility	electron mobility	296cm²/Vs	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet On Off Ratio	ON-OFF ratio	1000000	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet Mobility	average mobility in transistor array	200cm²/Vs	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Xps Binding Energy Range	Ga 3d	20.0–21.0eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—
Xps Binding Energy Range	Ga 2p	1117–1118eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—
Xps Binding Energy Range	O 1s	530.1–531eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ dielectric thickness	300nm	SiO₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S	—	—
Film Thickness	Ga₂O₃ tunneling layer thickness	2.6nm	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Layer Count	WS₂ layers	<10	WS₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Pl Peak Shift	exciton energy shift	0.012eV	Ga₂O₃ WS₂	Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Barrier Height	Ga₂O₃/WS₂ tunneling contact barrier height	3.7meV	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Barrier Height	WS₂ Au-contact barrier height	258meV	WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Contact Resistance	contact resistance	2.38kΩ·μm	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Specific Contact Resistivity	specific contact resistivity	3 x 10-5Ω·cm2	Ga₂O₃ WS₂ Au	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet Mobility	electron mobility	296cm²/Vs	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet On Off Ratio	ON-OFF ratio	1000000	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Fet Mobility	average mobility in transistor array	200cm²/Vs	Ga₂O₃ WS₂ Au SiO₂ Si	Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm S		—
Xps Binding Energy Range	Ga 3d	20.0–21.0eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—
Xps Binding Energy Range	Ga 2p	1117–1118eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—
Xps Binding Energy Range	O 1s	530.1–531eV	Ga₂O₃	Ultrathin Ga₂O₃ tunneling film printed from native oxide and		—

Ultrathin Ga₂O₃ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor

Samples

Ultrathin Ga₂O₃ tunneling film printed from native oxide and transferred for characterization on SiO₂/Si substrate.

Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si.

Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm SiO₂/Si.

Materials

Why these are connected

Ultrathin Ga₂O₃ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor

Samples

Ultrathin Ga₂O₃ tunneling film printed from native oxide and transferred for characterization on SiO₂/Si substrate.

Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si.

Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm SiO₂/Si.

Materials

Why these are connected

Ultrathin Ga₂O₃ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor

Samples

Ultrathin Ga₂O₃ tunneling film printed from native oxide and transferred for characterization on SiO₂/Si substrate.

Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si.

Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm SiO₂/Si.

Materials

Why these are connected

Ultrathin Ga₂O₃ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor

Samples

Ultrathin Ga₂O₃ tunneling film printed from native oxide and transferred for characterization on SiO₂/Si substrate.

Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si.

Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm SiO₂/Si.

Materials

Why these are connected

Ultrathin Ga₂O₃ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor

Samples

Ultrathin Ga₂O₃ tunneling film printed from native oxide and transferred for characterization on SiO₂/Si substrate.

Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si.

Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm SiO₂/Si.

Materials

Why these are connected

Ultrathin Ga₂O₃ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor

Samples

Ultrathin Ga₂O₃ tunneling film printed from native oxide and transferred for characterization on SiO₂/Si substrate.

Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si.

Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm SiO₂/Si.

Materials

Why these are connected

Ultrathin Ga₂O₃ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor

Samples

Ultrathin Ga₂O₃ tunneling film printed from native oxide and transferred for characterization on SiO₂/Si substrate.

Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si.

Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm SiO₂/Si.

Materials

Why these are connected

Ultrathin Ga₂O₃ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor

Samples

Ultrathin Ga₂O₃ tunneling film printed from native oxide and transferred for characterization on SiO₂/Si substrate.

Multilayer WS₂ nanoflake with less than 10 layers on SiO₂/Si.

Ga₂O₃/WS₂ back-gated transistor with Au contacts on 300 nm SiO₂/Si.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties