Quantum geometry induced anomalous chiral transport and hidden symmetry breaking in centrosymmetric 2M-WS₂
Hang Cui, Shao-Bo Liu, Erqing Wang, Mingxiang Pan et al.
2026·arXiv:2605.18277
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Thin-flake 2M-WS₂ Hall bar device fabricated by top-down mechanical cleavage onto 285 nm SiO₂/Si; device thickness reported as 130 nm for the representative flake.
Quantum geometry induced anomalous chiral transport and hidden symmetry breaking in centrosymmetric 2M-WS₂
Hang Cui, Shao-Bo Liu, Erqing Wang, Mingxiang Pan et al.
2026·arXiv:2605.18277
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Thin-flake 2M-WS₂ Hall bar device fabricated by top-down mechanical cleavage onto 285 nm SiO₂/Si; device thickness reported as 130 nm for the representative flake.
Quantum geometry induced anomalous chiral transport and hidden symmetry breaking in centrosymmetric 2M-WS₂
Hang Cui, Shao-Bo Liu, Erqing Wang, Mingxiang Pan et al.
2026·arXiv:2605.18277
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Thin-flake 2M-WS₂ Hall bar device fabricated by top-down mechanical cleavage onto 285 nm SiO₂/Si; device thickness reported as 130 nm for the representative flake.
Quantum geometry induced anomalous chiral transport and hidden symmetry breaking in centrosymmetric 2M-WS₂
Hang Cui, Shao-Bo Liu, Erqing Wang, Mingxiang Pan et al.
2026·arXiv:2605.18277
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Thin-flake 2M-WS₂ Hall bar device fabricated by top-down mechanical cleavage onto 285 nm SiO₂/Si; device thickness reported as 130 nm for the representative flake.