Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations3 properties4 figures
2 preparations2 characterizations2 properties4 figures
2 preparations3 characterizations1 property5 figures
2 preparations3 characterizations2 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2 | — | |||
| Raman Intensity Ratio | D peak | absent | — | |||
| Afm Roughness Rms | RMS roughness | 1.25nm | — | |||
| Afm Roughness Rms | RMS roughness | 0.26nm | — | |||
| Xrd Rocking Fwhm | (002) | 0.6deg | — | |||
| Sample Size | transferred oxide membrane area | 4 mm x 5 mm | — | |||
| Ferroelectric Response | PFM indicates ferroelectricity | present | — | |||
| Raman Peak | regex-detected Raman peak | 3000cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Strain and doping transfer between suspended and supported bilayer graphene
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Electromechanical response of saddle points in twisted hBN moiré superlattices
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Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations3 properties4 figures
2 preparations2 characterizations2 properties4 figures
2 preparations3 characterizations1 property5 figures
2 preparations3 characterizations2 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2 | — | |||
| Raman Intensity Ratio | D peak | absent | — | |||
| Afm Roughness Rms | RMS roughness | 1.25nm | — | |||
| Afm Roughness Rms | RMS roughness | 0.26nm | — | |||
| Xrd Rocking Fwhm | (002) | 0.6deg | — | |||
| Sample Size | transferred oxide membrane area | 4 mm x 5 mm | — | |||
| Ferroelectric Response | PFM indicates ferroelectricity | present | — | |||
| Raman Peak | regex-detected Raman peak | 3000cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Strain and doping transfer between suspended and supported bilayer graphene
Low voltage graphene interface engineered organic ferroelectric tunnel junction devices
Engineering deterministic, tunable, and reversible folds in graphene with the use of ultrafast laser micro-patterned stretchable polymer substrate
Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals
The role of precursor coverage in the synthesis and substrate transfer of graphene nanoribbons
Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation
Metastable states of 2D-material-on-metal-islands structures revealed by thermal cycling
Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
Electromechanical response of saddle points in twisted hBN moiré superlattices
Resonant Raman scattering of surface phonon polaritons mediated by excitons in WSe2 films
Wafer-scale robust graphene electronics under industrial processing conditions
Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations3 properties4 figures
2 preparations2 characterizations2 properties4 figures
2 preparations3 characterizations1 property5 figures
2 preparations3 characterizations2 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2 | — | |||
| Raman Intensity Ratio | D peak | absent | — | |||
| Afm Roughness Rms | RMS roughness | 1.25nm | — | |||
| Afm Roughness Rms | RMS roughness | 0.26nm | — | |||
| Xrd Rocking Fwhm | (002) | 0.6deg | — | |||
| Sample Size | transferred oxide membrane area | 4 mm x 5 mm | — | |||
| Ferroelectric Response | PFM indicates ferroelectricity | present | — | |||
| Raman Peak | regex-detected Raman peak | 3000cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Strain and doping transfer between suspended and supported bilayer graphene
Low voltage graphene interface engineered organic ferroelectric tunnel junction devices
Engineering deterministic, tunable, and reversible folds in graphene with the use of ultrafast laser micro-patterned stretchable polymer substrate
Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals
The role of precursor coverage in the synthesis and substrate transfer of graphene nanoribbons
Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation
Metastable states of 2D-material-on-metal-islands structures revealed by thermal cycling
Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
Electromechanical response of saddle points in twisted hBN moiré superlattices
Resonant Raman scattering of surface phonon polaritons mediated by excitons in WSe2 films
Wafer-scale robust graphene electronics under industrial processing conditions
Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations3 properties4 figures
2 preparations2 characterizations2 properties4 figures
2 preparations3 characterizations1 property5 figures
2 preparations3 characterizations2 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2 | — | |||
| Raman Intensity Ratio | D peak | absent | — | |||
| Afm Roughness Rms | RMS roughness | 1.25nm | — | |||
| Afm Roughness Rms | RMS roughness | 0.26nm | — | |||
| Xrd Rocking Fwhm | (002) | 0.6deg | — | |||
| Sample Size | transferred oxide membrane area | 4 mm x 5 mm | — | |||
| Ferroelectric Response | PFM indicates ferroelectricity | present | — | |||
| Raman Peak | regex-detected Raman peak | 3000cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Strain and doping transfer between suspended and supported bilayer graphene
Low voltage graphene interface engineered organic ferroelectric tunnel junction devices
Engineering deterministic, tunable, and reversible folds in graphene with the use of ultrafast laser micro-patterned stretchable polymer substrate
Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals
The role of precursor coverage in the synthesis and substrate transfer of graphene nanoribbons
Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation
Metastable states of 2D-material-on-metal-islands structures revealed by thermal cycling
Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
Electromechanical response of saddle points in twisted hBN moiré superlattices
Resonant Raman scattering of surface phonon polaritons mediated by excitons in WSe2 films
Wafer-scale robust graphene electronics under industrial processing conditions
Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials
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