Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations5 properties5 figures
2 preparations7 characterizations8 properties7 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Mode Separation | A1g - E2g | —cm⁻¹ | — | |||
| PL Peak | A-exciton | 660nm | — | |||
| PL Peak | B-exciton | 630nm | — | |||
| PL Peak | A-exciton | 660nm | — | |||
| PL Peak | B-exciton | 630nm | — | |||
| Afm Thickness | hybrid film thickness | 15nm | — | |||
| Nanocrystal Size | average diameter | 13nm | — | |||
| Doping Level | Sn/tot | 10.8% | — | |||
| Excitation Wavelength | pump wavelength | 1750nm | — | |||
| Excitation Wavelength | pump wavelength | 500nm | — | |||
| Excitation Wavelength | pump wavelength | 1750nm | — | |||
| Pump Fluence | fluence | 300uJ/cm² | — |
Related documents with shared materials, methods, properties, or citations.
Analytical photoresponses of Schottky contact MoS2 phototransistors
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Defects, band bending and ionization rings in MoS2
Scalable high-mobility graphene/hBN heterostructures
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Identification of Polytypism and Their Dislocations in Bilayer MoS2 Using Correlative Transmission Electron Microscopy and Raman Spectroscopy
Blister Test to Measure the Out-of-Plane Shear Modulus of Few-Layer Graphene
Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Biorealistic response in a technology-compatible graphene synaptic transistor
Tracking single atoms in a liquid environment
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations5 properties5 figures
2 preparations7 characterizations8 properties7 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Mode Separation | A1g - E2g | —cm⁻¹ | — | |||
| PL Peak | A-exciton | 660nm | — | |||
| PL Peak | B-exciton | 630nm | — | |||
| PL Peak | A-exciton | 660nm | — | |||
| PL Peak | B-exciton | 630nm | — | |||
| Afm Thickness | hybrid film thickness | 15nm | — | |||
| Nanocrystal Size | average diameter | 13nm | — | |||
| Doping Level | Sn/tot | 10.8% | — | |||
| Excitation Wavelength | pump wavelength | 1750nm | — | |||
| Excitation Wavelength | pump wavelength | 500nm | — | |||
| Excitation Wavelength | pump wavelength | 1750nm | — | |||
| Pump Fluence | fluence | 300uJ/cm² | — |
Related documents with shared materials, methods, properties, or citations.
Analytical photoresponses of Schottky contact MoS2 phototransistors
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Defects, band bending and ionization rings in MoS2
Scalable high-mobility graphene/hBN heterostructures
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Identification of Polytypism and Their Dislocations in Bilayer MoS2 Using Correlative Transmission Electron Microscopy and Raman Spectroscopy
Blister Test to Measure the Out-of-Plane Shear Modulus of Few-Layer Graphene
Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Biorealistic response in a technology-compatible graphene synaptic transistor
Tracking single atoms in a liquid environment
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations5 properties5 figures
2 preparations7 characterizations8 properties7 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Mode Separation | A1g - E2g | —cm⁻¹ | — | |||
| PL Peak | A-exciton | 660nm | — | |||
| PL Peak | B-exciton | 630nm | — | |||
| PL Peak | A-exciton | 660nm | — | |||
| PL Peak | B-exciton | 630nm | — | |||
| Afm Thickness | hybrid film thickness | 15nm | — | |||
| Nanocrystal Size | average diameter | 13nm | — | |||
| Doping Level | Sn/tot | 10.8% | — | |||
| Excitation Wavelength | pump wavelength | 1750nm | — | |||
| Excitation Wavelength | pump wavelength | 500nm | — | |||
| Excitation Wavelength | pump wavelength | 1750nm | — | |||
| Pump Fluence | fluence | 300uJ/cm² | — |
Related documents with shared materials, methods, properties, or citations.
Analytical photoresponses of Schottky contact MoS2 phototransistors
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Defects, band bending and ionization rings in MoS2
Scalable high-mobility graphene/hBN heterostructures
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Identification of Polytypism and Their Dislocations in Bilayer MoS2 Using Correlative Transmission Electron Microscopy and Raman Spectroscopy
Blister Test to Measure the Out-of-Plane Shear Modulus of Few-Layer Graphene
Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Biorealistic response in a technology-compatible graphene synaptic transistor
Tracking single atoms in a liquid environment
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations5 properties5 figures
2 preparations7 characterizations8 properties7 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Mode Separation | A1g - E2g | —cm⁻¹ | — | |||
| PL Peak | A-exciton | 660nm | — | |||
| PL Peak | B-exciton | 630nm | — | |||
| PL Peak | A-exciton | 660nm | — | |||
| PL Peak | B-exciton | 630nm | — | |||
| Afm Thickness | hybrid film thickness | 15nm | — | |||
| Nanocrystal Size | average diameter | 13nm | — | |||
| Doping Level | Sn/tot | 10.8% | — | |||
| Excitation Wavelength | pump wavelength | 1750nm | — | |||
| Excitation Wavelength | pump wavelength | 500nm | — | |||
| Excitation Wavelength | pump wavelength | 1750nm | — | |||
| Pump Fluence | fluence | 300uJ/cm² | — |
Related documents with shared materials, methods, properties, or citations.
Analytical photoresponses of Schottky contact MoS2 phototransistors
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Defects, band bending and ionization rings in MoS2
Scalable high-mobility graphene/hBN heterostructures
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Identification of Polytypism and Their Dislocations in Bilayer MoS2 Using Correlative Transmission Electron Microscopy and Raman Spectroscopy
Blister Test to Measure the Out-of-Plane Shear Modulus of Few-Layer Graphene
Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Biorealistic response in a technology-compatible graphene synaptic transistor
Tracking single atoms in a liquid environment
