Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation8 characterizations10 properties3 figures
1 preparation1 characterization1 property1 figure
1 preparation
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Ir Band Position | B-N stretching / TO mode | 1350-1500cm⁻¹ | — | |||
| Raman Peak | E2g | 1364cm⁻¹ | — | |||
| Raman Peak Fwhm | E2g | 14.85cm⁻¹ | — | |||
| Xrd D Spacing | (0002) | 0.33nm | — | |||
| Contact Angle | water contact angle | 55-60deg | — | |||
| Lateral Domain Size | sheet lateral size | 200-300nm | — | |||
| Surface Area Coverage | coverage per 3x3 um² | 70441.75nm² | — | |||
| Xps Binding Energy | B 1s | 190.6eV | — | |||
| Xps Binding Energy | N 1s | 398.5eV | — | |||
| Xps Binding Energy | N 1s | 400.5eV | — | |||
| Xps Vbm | — | 1.7eV | — |
Related documents with shared materials, methods, properties, or citations.
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Unidirectional domain growth of hexagonal boron nitride thin films
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FABRICATION OF LARGE-AREA HEXAGONAL BORON NITRIDE THIN FILMS
Amorphous Boron Nitride Dielectric
Direct measurement of the longitudinal exciton dispersion in h-BN by resonant inelastic x-ray scattering
Retrieving optical parameters of emerging van der Waals flakes
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation8 characterizations10 properties3 figures
1 preparation1 characterization1 property1 figure
1 preparation
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Ir Band Position | B-N stretching / TO mode | 1350-1500cm⁻¹ | — | |||
| Raman Peak | E2g | 1364cm⁻¹ | — | |||
| Raman Peak Fwhm | E2g | 14.85cm⁻¹ | — | |||
| Xrd D Spacing | (0002) | 0.33nm | — | |||
| Contact Angle | water contact angle | 55-60deg | — | |||
| Lateral Domain Size | sheet lateral size | 200-300nm | — | |||
| Surface Area Coverage | coverage per 3x3 um² | 70441.75nm² | — | |||
| Xps Binding Energy | B 1s | 190.6eV | — | |||
| Xps Binding Energy | N 1s | 398.5eV | — | |||
| Xps Binding Energy | N 1s | 400.5eV | — | |||
| Xps Vbm | — | 1.7eV | — |
Related documents with shared materials, methods, properties, or citations.
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Unidirectional domain growth of hexagonal boron nitride thin films
Non-linear optics at twist interfaces in h-BN/SiC heterostructures
FABRICATION OF LARGE-AREA HEXAGONAL BORON NITRIDE THIN FILMS
Amorphous Boron Nitride Dielectric
Direct measurement of the longitudinal exciton dispersion in h-BN by resonant inelastic x-ray scattering
Retrieving optical parameters of emerging van der Waals flakes
Full Crystallographic Imaging of Hexagonal Boron Nitride Monolayers with Phonon-Enhanced Sum-Frequency Microscopy
Near-Infrared plasmon induced hot electron extraction evidence in an indium tin oxide nanoparticle / monolayer molybdenum disulphide heterostructure
Electron-beam-induced Contactless Manipulation of Interlayer Twist in van der Waals Heterostructures
2D Hexagonal Boron Nitride-based Anticorrosion Coatings
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation8 characterizations10 properties3 figures
1 preparation1 characterization1 property1 figure
1 preparation
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Ir Band Position | B-N stretching / TO mode | 1350-1500cm⁻¹ | — | |||
| Raman Peak | E2g | 1364cm⁻¹ | — | |||
| Raman Peak Fwhm | E2g | 14.85cm⁻¹ | — | |||
| Xrd D Spacing | (0002) | 0.33nm | — | |||
| Contact Angle | water contact angle | 55-60deg | — | |||
| Lateral Domain Size | sheet lateral size | 200-300nm | — | |||
| Surface Area Coverage | coverage per 3x3 um² | 70441.75nm² | — | |||
| Xps Binding Energy | B 1s | 190.6eV | — | |||
| Xps Binding Energy | N 1s | 398.5eV | — | |||
| Xps Binding Energy | N 1s | 400.5eV | — | |||
| Xps Vbm | — | 1.7eV | — |
Related documents with shared materials, methods, properties, or citations.
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Unidirectional domain growth of hexagonal boron nitride thin films
Non-linear optics at twist interfaces in h-BN/SiC heterostructures
FABRICATION OF LARGE-AREA HEXAGONAL BORON NITRIDE THIN FILMS
Amorphous Boron Nitride Dielectric
Direct measurement of the longitudinal exciton dispersion in h-BN by resonant inelastic x-ray scattering
Retrieving optical parameters of emerging van der Waals flakes
Full Crystallographic Imaging of Hexagonal Boron Nitride Monolayers with Phonon-Enhanced Sum-Frequency Microscopy
Near-Infrared plasmon induced hot electron extraction evidence in an indium tin oxide nanoparticle / monolayer molybdenum disulphide heterostructure
Electron-beam-induced Contactless Manipulation of Interlayer Twist in van der Waals Heterostructures
2D Hexagonal Boron Nitride-based Anticorrosion Coatings
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation8 characterizations10 properties3 figures
1 preparation1 characterization1 property1 figure
1 preparation
1 preparation
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Ir Band Position | B-N stretching / TO mode | 1350-1500cm⁻¹ | — | |||
| Raman Peak | E2g | 1364cm⁻¹ | — | |||
| Raman Peak Fwhm | E2g | 14.85cm⁻¹ | — | |||
| Xrd D Spacing | (0002) | 0.33nm | — | |||
| Contact Angle | water contact angle | 55-60deg | — | |||
| Lateral Domain Size | sheet lateral size | 200-300nm | — | |||
| Surface Area Coverage | coverage per 3x3 um² | 70441.75nm² | — | |||
| Xps Binding Energy | B 1s | 190.6eV | — | |||
| Xps Binding Energy | N 1s | 398.5eV | — | |||
| Xps Binding Energy | N 1s | 400.5eV | — | |||
| Xps Vbm | — | 1.7eV | — |
Related documents with shared materials, methods, properties, or citations.
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Unidirectional domain growth of hexagonal boron nitride thin films
Non-linear optics at twist interfaces in h-BN/SiC heterostructures
FABRICATION OF LARGE-AREA HEXAGONAL BORON NITRIDE THIN FILMS
Amorphous Boron Nitride Dielectric
Direct measurement of the longitudinal exciton dispersion in h-BN by resonant inelastic x-ray scattering
Retrieving optical parameters of emerging van der Waals flakes
Full Crystallographic Imaging of Hexagonal Boron Nitride Monolayers with Phonon-Enhanced Sum-Frequency Microscopy
Near-Infrared plasmon induced hot electron extraction evidence in an indium tin oxide nanoparticle / monolayer molybdenum disulphide heterostructure
Electron-beam-induced Contactless Manipulation of Interlayer Twist in van der Waals Heterostructures
2D Hexagonal Boron Nitride-based Anticorrosion Coatings
