Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires

Elise Bailly-Rioufreyt; Zoya Polshchykova; Grégoire Saerens; Wenhe Jia; Thomas Dursap; Andreas Maeder; Philippe Regreny; Robert J. Chapman; Helena Weigand; Alexandre Danescu; Nicolas Chauvin; José Penuelas; Rachel Grange

doi:10.48550/arXiv.2512.02980

Paper details

Research paper

Experimental Characterization

Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires

Elise Bailly-Rioufreyt, Zoya Polshchykova, Grégoire Saerens, Wenhe Jia et al.

arXiv·2025·arXiv:2512.02980

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single Zn-blende GaAs nanowire used as a reference sample to characterize the effective nonlinear susceptibility tensor.

2 preparations4 characterizations2 properties3 figures

ExperimentalGaAsStudied Material

Tunable nanosource consisting of two orthogonal GaAs nanowires (labeled NWH and NWV) used for polarization-entangled photon generation.

1 preparation3 characterizations3 properties3 figures

ExperimentalGaAsStudied Material

Materials

GaAs

Studied Material

Also known as

gallium arsenide

studied material

SiO₂

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	CAR	50	GaAs	Single Zn-blende GaAs nanowire used as a reference sample to	—
Fet On Off Ratio	CAR	150	GaAs	Single Zn-blende GaAs nanowire used as a reference sample to	—
Fet On Off Ratio	state fidelity	0.9	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—
Fet On Off Ratio	generated state type	entangled	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—
Fet On Off Ratio	generated state type	separable	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—

Properties

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	CAR	50	GaAs	Single Zn-blende GaAs nanowire used as a reference sample to	—
Fet On Off Ratio	CAR	150	GaAs	Single Zn-blende GaAs nanowire used as a reference sample to	—
Fet On Off Ratio	state fidelity	0.9	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—
Fet On Off Ratio	generated state type	entangled	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—
Fet On Off Ratio	generated state type	separable	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—

Properties

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	CAR	50	GaAs	Single Zn-blende GaAs nanowire used as a reference sample to	—
Fet On Off Ratio	CAR	150	GaAs	Single Zn-blende GaAs nanowire used as a reference sample to	—
Fet On Off Ratio	state fidelity	0.9	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—
Fet On Off Ratio	generated state type	entangled	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—
Fet On Off Ratio	generated state type	separable	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—

Properties

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	CAR	50	GaAs	Single Zn-blende GaAs nanowire used as a reference sample to	—
Fet On Off Ratio	CAR	150	GaAs	Single Zn-blende GaAs nanowire used as a reference sample to	—
Fet On Off Ratio	state fidelity	0.9	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—
Fet On Off Ratio	generated state type	entangled	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—
Fet On Off Ratio	generated state type	separable	GaAs	Tunable nanosource consisting of two orthogonal GaAs nanowir	—

Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires

Samples

Single Zn-blende GaAs nanowire used as a reference sample to characterize the effective nonlinear susceptibility tensor.

Tunable nanosource consisting of two orthogonal GaAs nanowires (labeled NWH and NWV) used for polarization-entangled photon generation.

Materials

Why these are connected

Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires

Samples

Single Zn-blende GaAs nanowire used as a reference sample to characterize the effective nonlinear susceptibility tensor.

Tunable nanosource consisting of two orthogonal GaAs nanowires (labeled NWH and NWV) used for polarization-entangled photon generation.

Materials

Why these are connected

Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires

Samples

Single Zn-blende GaAs nanowire used as a reference sample to characterize the effective nonlinear susceptibility tensor.

Tunable nanosource consisting of two orthogonal GaAs nanowires (labeled NWH and NWV) used for polarization-entangled photon generation.

Materials

Why these are connected

Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires

Samples

Single Zn-blende GaAs nanowire used as a reference sample to characterize the effective nonlinear susceptibility tensor.

Tunable nanosource consisting of two orthogonal GaAs nanowires (labeled NWH and NWV) used for polarization-entangled photon generation.

Materials

Why these are connected

Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires

Samples

Single Zn-blende GaAs nanowire used as a reference sample to characterize the effective nonlinear susceptibility tensor.

Tunable nanosource consisting of two orthogonal GaAs nanowires (labeled NWH and NWV) used for polarization-entangled photon generation.

Materials

Why these are connected

Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires

Samples

Single Zn-blende GaAs nanowire used as a reference sample to characterize the effective nonlinear susceptibility tensor.

Tunable nanosource consisting of two orthogonal GaAs nanowires (labeled NWH and NWV) used for polarization-entangled photon generation.

Materials

Why these are connected

Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires

Samples

Single Zn-blende GaAs nanowire used as a reference sample to characterize the effective nonlinear susceptibility tensor.

Tunable nanosource consisting of two orthogonal GaAs nanowires (labeled NWH and NWV) used for polarization-entangled photon generation.

Materials

Why these are connected

Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires

Samples

Single Zn-blende GaAs nanowire used as a reference sample to characterize the effective nonlinear susceptibility tensor.

Tunable nanosource consisting of two orthogonal GaAs nanowires (labeled NWH and NWV) used for polarization-entangled photon generation.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties