Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl

Vikas Saini; Ajinkya Punjal; Utkarsh Kumar Pandey; Ruturaj Vikrant Puranik; Vikash Sharma; Vivek Dwij; Ruta Kulkarni; Aditya Dharmadhikari; Bahadur Singh; Shriganesh Prabhu; A. Thamizhavel; Kirtika Vijay; Soma Banik

doi:10.1002/apxr.202300063

Paper details

Research paper

Experimental CharacterizationComputational DFT

Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl

Vikas Saini, Ajinkya Punjal, Utkarsh Kumar Pandey, Ruturaj Vikrant Puranik et al.

arXiv preprint·2023·arXiv:2310.04717

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single-crystal PtAl grown by the Czochralski method; measured on the (110) plane for pump-probe and SHG experiments; also characterized by SR-XPS and RPES.

3 preparations5 characterizations17 properties12 figures

ExperimentalPtAlStudied Material

Standard GaAs(111) reference crystal used for SHG comparison.

No measurements recorded

ReferenceGaAsReference Material

Standard ZnTe(110) reference crystal used for SHG comparison.

No measurements recorded

ReferenceZnTeReference Material

PtAl electronic-structure calculation cell used for DFT/optical-property analysis.

2 properties

Simulated Supercell DftPtAlStudied Material

Materials

PtAl

Studied Material

studied material

GaAs

Reference Material

Also known as

GaAs(111)

reference material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Lattice Constant	a	4.864angstrom	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Unit Cell Volume	unit cell volume	115angstrom³	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Specific Heat Coefficient	Sommerfeld coefficient gamma	0.86mJ/mol-K²	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Temperature	lattice temperature	300K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Fluence	lowest pump fluence	0.29mJ/cm2	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Fluence	highest pump fluence	1.75mJ/cm2	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Time Delay	probe delay range upper bound	6ps	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Reflectivity	R at 650 nm	0.535	PtAl	PtAl electronic-structure calculation cell used for DFT/opti	—
Skin Depth	skin depth at 650 nm	16.6nm	PtAl	PtAl electronic-structure calculation cell used for DFT/opti	—
Temperature	electron temperature	2848K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Temperature	electron temperature	6944K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Oscillation Frequency	acoustic phonon oscillation	0.06THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Oscillation Frequency	optical phonon oscillation	2.94THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Raman Peak	optical phonon peak	3.2THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Susceptibility	d14	468pm/V	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Wavelength	second harmonic peak	400nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Wavelength	fundamental excitation	800nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Wavelength	pump wavelength	650nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Probe Wavelength	probe wavelength	800nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—

Properties

Type	Label	Value	Material	Sample	Source
Lattice Constant	a	4.864angstrom	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Unit Cell Volume	unit cell volume	115angstrom³	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Specific Heat Coefficient	Sommerfeld coefficient gamma	0.86mJ/mol-K²	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Temperature	lattice temperature	300K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Fluence	lowest pump fluence	0.29mJ/cm2	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Fluence	highest pump fluence	1.75mJ/cm2	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Time Delay	probe delay range upper bound	6ps	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Reflectivity	R at 650 nm	0.535	PtAl	PtAl electronic-structure calculation cell used for DFT/opti	—
Skin Depth	skin depth at 650 nm	16.6nm	PtAl	PtAl electronic-structure calculation cell used for DFT/opti	—
Temperature	electron temperature	2848K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Temperature	electron temperature	6944K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Oscillation Frequency	acoustic phonon oscillation	0.06THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Oscillation Frequency	optical phonon oscillation	2.94THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Raman Peak	optical phonon peak	3.2THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Susceptibility	d14	468pm/V	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Wavelength	second harmonic peak	400nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Wavelength	fundamental excitation	800nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Wavelength	pump wavelength	650nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Probe Wavelength	probe wavelength	800nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—

Properties

Type	Label	Value	Material	Sample	Source
Lattice Constant	a	4.864angstrom	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Unit Cell Volume	unit cell volume	115angstrom³	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Specific Heat Coefficient	Sommerfeld coefficient gamma	0.86mJ/mol-K²	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Temperature	lattice temperature	300K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Fluence	lowest pump fluence	0.29mJ/cm2	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Fluence	highest pump fluence	1.75mJ/cm2	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Time Delay	probe delay range upper bound	6ps	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Reflectivity	R at 650 nm	0.535	PtAl	PtAl electronic-structure calculation cell used for DFT/opti	—
Skin Depth	skin depth at 650 nm	16.6nm	PtAl	PtAl electronic-structure calculation cell used for DFT/opti	—
Temperature	electron temperature	2848K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Temperature	electron temperature	6944K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Oscillation Frequency	acoustic phonon oscillation	0.06THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Oscillation Frequency	optical phonon oscillation	2.94THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Raman Peak	optical phonon peak	3.2THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Susceptibility	d14	468pm/V	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Wavelength	second harmonic peak	400nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Wavelength	fundamental excitation	800nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Wavelength	pump wavelength	650nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Probe Wavelength	probe wavelength	800nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—

Properties

Type	Label	Value	Material	Sample	Source
Lattice Constant	a	4.864angstrom	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Unit Cell Volume	unit cell volume	115angstrom³	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Specific Heat Coefficient	Sommerfeld coefficient gamma	0.86mJ/mol-K²	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Temperature	lattice temperature	300K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Fluence	lowest pump fluence	0.29mJ/cm2	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Fluence	highest pump fluence	1.75mJ/cm2	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Time Delay	probe delay range upper bound	6ps	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Reflectivity	R at 650 nm	0.535	PtAl	PtAl electronic-structure calculation cell used for DFT/opti	—
Skin Depth	skin depth at 650 nm	16.6nm	PtAl	PtAl electronic-structure calculation cell used for DFT/opti	—
Temperature	electron temperature	2848K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Temperature	electron temperature	6944K	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Oscillation Frequency	acoustic phonon oscillation	0.06THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Oscillation Frequency	optical phonon oscillation	2.94THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Raman Peak	optical phonon peak	3.2THz	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Susceptibility	d14	468pm/V	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Wavelength	second harmonic peak	400nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Shg Wavelength	fundamental excitation	800nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Pump Wavelength	pump wavelength	650nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—
Probe Wavelength	probe wavelength	800nm	PtAl	Single-crystal PtAl grown by the Czochralski method; measure	—

Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl

Samples

Single-crystal PtAl grown by the Czochralski method; measured on the (110) plane for pump-probe and SHG experiments; also characterized by SR-XPS and RPES.

Standard GaAs(111) reference crystal used for SHG comparison.

Standard ZnTe(110) reference crystal used for SHG comparison.

PtAl electronic-structure calculation cell used for DFT/optical-property analysis.

Materials

Why these are connected

Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl

Samples

Single-crystal PtAl grown by the Czochralski method; measured on the (110) plane for pump-probe and SHG experiments; also characterized by SR-XPS and RPES.

Standard GaAs(111) reference crystal used for SHG comparison.

Standard ZnTe(110) reference crystal used for SHG comparison.

PtAl electronic-structure calculation cell used for DFT/optical-property analysis.

Materials

Why these are connected

Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl

Samples

Single-crystal PtAl grown by the Czochralski method; measured on the (110) plane for pump-probe and SHG experiments; also characterized by SR-XPS and RPES.

Standard GaAs(111) reference crystal used for SHG comparison.

Standard ZnTe(110) reference crystal used for SHG comparison.

PtAl electronic-structure calculation cell used for DFT/optical-property analysis.

Materials

Why these are connected

Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl

Samples

Single-crystal PtAl grown by the Czochralski method; measured on the (110) plane for pump-probe and SHG experiments; also characterized by SR-XPS and RPES.

Standard GaAs(111) reference crystal used for SHG comparison.

Standard ZnTe(110) reference crystal used for SHG comparison.

PtAl electronic-structure calculation cell used for DFT/optical-property analysis.

Materials

Why these are connected

Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl

Samples

Single-crystal PtAl grown by the Czochralski method; measured on the (110) plane for pump-probe and SHG experiments; also characterized by SR-XPS and RPES.

Standard GaAs(111) reference crystal used for SHG comparison.

Standard ZnTe(110) reference crystal used for SHG comparison.

PtAl electronic-structure calculation cell used for DFT/optical-property analysis.

Materials

Why these are connected

Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl

Samples

Single-crystal PtAl grown by the Czochralski method; measured on the (110) plane for pump-probe and SHG experiments; also characterized by SR-XPS and RPES.

Standard GaAs(111) reference crystal used for SHG comparison.

Standard ZnTe(110) reference crystal used for SHG comparison.

PtAl electronic-structure calculation cell used for DFT/optical-property analysis.

Materials

Why these are connected

Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl

Samples

Single-crystal PtAl grown by the Czochralski method; measured on the (110) plane for pump-probe and SHG experiments; also characterized by SR-XPS and RPES.

Standard GaAs(111) reference crystal used for SHG comparison.

Standard ZnTe(110) reference crystal used for SHG comparison.

PtAl electronic-structure calculation cell used for DFT/optical-property analysis.

Materials

Why these are connected

Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl

Samples

Single-crystal PtAl grown by the Czochralski method; measured on the (110) plane for pump-probe and SHG experiments; also characterized by SR-XPS and RPES.

Standard GaAs(111) reference crystal used for SHG comparison.

Standard ZnTe(110) reference crystal used for SHG comparison.

PtAl electronic-structure calculation cell used for DFT/optical-property analysis.

Materials

Why these are connected

Growth

Processing

Characterization

Properties

Simulations

Growth

Processing

Characterization

Properties

Simulations

Growth

Processing

Characterization

Properties

Simulations

Growth