Research paper
Experimental CharacterizationComputational DFTEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations14 properties5 figures
2 characterizations2 properties4 figures
4 properties
1 characterization10 properties1 figure
1 characterization1 figure
1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Constant | C₈₀ (1x1) lattice constant | 1.09nm | — | |||
| Lattice Constant | incommensurate periodicity | 4.3substrateunitcells | — | |||
| Lattice Constant | amin | 1.103nm | — | |||
| Property | condensation energy | -1.09eV | — | |||
| Property | condensation energy | -2.64eV | — | |||
| Property | condensation energy | -2.9eV | — | |||
| Property | lock-in energy | 99meV | — | |||
| Property | lock-in energy | 90meV | — | |||
| Band Gap | HOMO-LUMO gap | 1.49eV | — | |||
| Band Gap | HOMO-LUMO gap | 1.28eV | — | |||
| Band Gap | HOMO-LUMO gap | 1.37eV | — | |||
| Property | LUMO offset above Fermi level | 118meV | — | |||
| Property | LUMO offset above Fermi level | 81meV | — | |||
| Dipole Moment | gasphase dipole moment | 0.252D | — | |||
| Electron Affinity | electron affinity | 3.81eV | — | |||
| Ionization Energy | ionization energy | 5.32eV | — | |||
| Property | molecular orbital shift | 0.3eV | — | |||
| Workfunction | workfunction | 3.95eV | — | |||
| Workfunction | workfunction | 4.2eV | — | |||
| Binding Energy | HOMO | 2.3eV | — | |||
| Binding Energy | HOMO | 2.04eV | — | |||
| Property | phase transition center | 125K | — | |||
| Property | excitation energy | 74meV | — | |||
| Property | N 1s binding-energy difference to h-BN | 1.42eV | — | |||
| Property | N 1s binding-energy stability window | 25meV | — | |||
| Property | low-temperature superstructure | C80 (2x2) | — | |||
| Property | surface registry | aligned but incommensurate | — | |||
| Xps Binding Energy Shift | N 1s | 1.42eV | — | |||
| Xps Binding Energy Shift | N 1s | 25meV | — |
Related documents with shared materials, methods, properties, or citations.
A METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE USING GRAPHENE AND HEXAGONAL BORON NITRIDE
In-Plane and Out-of-Plane Excitonic Coupling in 2D Molecular Crystals
Formation and protection of an Eu-Ir surface compound below hexagonal boron nitride
Ultra-clean interface between high k dielectric and 2D MoS2
Robust flat bands in twisted trilayer graphene quasicrystals
Exotic Quantum Phenomena in Twisted Bilayer Graphene
Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl
Laser-assisted tunneling and Hartman effect in graphene under scalar potential and exchange fields
Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors
Charging of quantum emitters in hexagonal boron nitride - graphene heterostructures due to electrostatic screening
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations14 properties5 figures
2 characterizations2 properties4 figures
4 properties
1 characterization10 properties1 figure
1 characterization1 figure
1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Constant | C₈₀ (1x1) lattice constant | 1.09nm | — | |||
| Lattice Constant | incommensurate periodicity | 4.3substrateunitcells | — | |||
| Lattice Constant | amin | 1.103nm | — | |||
| Property | condensation energy | -1.09eV | — | |||
| Property | condensation energy | -2.64eV | — | |||
| Property | condensation energy | -2.9eV | — | |||
| Property | lock-in energy | 99meV | — | |||
| Property | lock-in energy | 90meV | — | |||
| Band Gap | HOMO-LUMO gap | 1.49eV | — | |||
| Band Gap | HOMO-LUMO gap | 1.28eV | — | |||
| Band Gap | HOMO-LUMO gap | 1.37eV | — | |||
| Property | LUMO offset above Fermi level | 118meV | — | |||
| Property | LUMO offset above Fermi level | 81meV | — | |||
| Dipole Moment | gasphase dipole moment | 0.252D | — | |||
| Electron Affinity | electron affinity | 3.81eV | — | |||
| Ionization Energy | ionization energy | 5.32eV | — | |||
| Property | molecular orbital shift | 0.3eV | — | |||
| Workfunction | workfunction | 3.95eV | — | |||
| Workfunction | workfunction | 4.2eV | — | |||
| Binding Energy | HOMO | 2.3eV | — | |||
| Binding Energy | HOMO | 2.04eV | — | |||
| Property | phase transition center | 125K | — | |||
| Property | excitation energy | 74meV | — | |||
| Property | N 1s binding-energy difference to h-BN | 1.42eV | — | |||
| Property | N 1s binding-energy stability window | 25meV | — | |||
| Property | low-temperature superstructure | C80 (2x2) | — | |||
| Property | surface registry | aligned but incommensurate | — | |||
| Xps Binding Energy Shift | N 1s | 1.42eV | — | |||
| Xps Binding Energy Shift | N 1s | 25meV | — |
Related documents with shared materials, methods, properties, or citations.
A METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE USING GRAPHENE AND HEXAGONAL BORON NITRIDE
In-Plane and Out-of-Plane Excitonic Coupling in 2D Molecular Crystals
Formation and protection of an Eu-Ir surface compound below hexagonal boron nitride
Ultra-clean interface between high k dielectric and 2D MoS2
Robust flat bands in twisted trilayer graphene quasicrystals
Exotic Quantum Phenomena in Twisted Bilayer Graphene
Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl
Laser-assisted tunneling and Hartman effect in graphene under scalar potential and exchange fields
Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors
Charging of quantum emitters in hexagonal boron nitride - graphene heterostructures due to electrostatic screening
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations14 properties5 figures
2 characterizations2 properties4 figures
4 properties
1 characterization10 properties1 figure
1 characterization1 figure
1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Constant | C₈₀ (1x1) lattice constant | 1.09nm | — | |||
| Lattice Constant | incommensurate periodicity | 4.3substrateunitcells | — | |||
| Lattice Constant | amin | 1.103nm | — | |||
| Property | condensation energy | -1.09eV | — | |||
| Property | condensation energy | -2.64eV | — | |||
| Property | condensation energy | -2.9eV | — | |||
| Property | lock-in energy | 99meV | — | |||
| Property | lock-in energy | 90meV | — | |||
| Band Gap | HOMO-LUMO gap | 1.49eV | — | |||
| Band Gap | HOMO-LUMO gap | 1.28eV | — | |||
| Band Gap | HOMO-LUMO gap | 1.37eV | — | |||
| Property | LUMO offset above Fermi level | 118meV | — | |||
| Property | LUMO offset above Fermi level | 81meV | — | |||
| Dipole Moment | gasphase dipole moment | 0.252D | — | |||
| Electron Affinity | electron affinity | 3.81eV | — | |||
| Ionization Energy | ionization energy | 5.32eV | — | |||
| Property | molecular orbital shift | 0.3eV | — | |||
| Workfunction | workfunction | 3.95eV | — | |||
| Workfunction | workfunction | 4.2eV | — | |||
| Binding Energy | HOMO | 2.3eV | — | |||
| Binding Energy | HOMO | 2.04eV | — | |||
| Property | phase transition center | 125K | — | |||
| Property | excitation energy | 74meV | — | |||
| Property | N 1s binding-energy difference to h-BN | 1.42eV | — | |||
| Property | N 1s binding-energy stability window | 25meV | — | |||
| Property | low-temperature superstructure | C80 (2x2) | — | |||
| Property | surface registry | aligned but incommensurate | — | |||
| Xps Binding Energy Shift | N 1s | 1.42eV | — | |||
| Xps Binding Energy Shift | N 1s | 25meV | — |
Related documents with shared materials, methods, properties, or citations.
A METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE USING GRAPHENE AND HEXAGONAL BORON NITRIDE
In-Plane and Out-of-Plane Excitonic Coupling in 2D Molecular Crystals
Formation and protection of an Eu-Ir surface compound below hexagonal boron nitride
Ultra-clean interface between high k dielectric and 2D MoS2
Robust flat bands in twisted trilayer graphene quasicrystals
Exotic Quantum Phenomena in Twisted Bilayer Graphene
Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl
Laser-assisted tunneling and Hartman effect in graphene under scalar potential and exchange fields
Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors
Charging of quantum emitters in hexagonal boron nitride - graphene heterostructures due to electrostatic screening
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations14 properties5 figures
2 characterizations2 properties4 figures
4 properties
1 characterization10 properties1 figure
1 characterization1 figure
1 characterization1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Lattice Constant | C₈₀ (1x1) lattice constant | 1.09nm | — | |||
| Lattice Constant | incommensurate periodicity | 4.3substrateunitcells | — | |||
| Lattice Constant | amin | 1.103nm | — | |||
| Property | condensation energy | -1.09eV | — | |||
| Property | condensation energy | -2.64eV | — | |||
| Property | condensation energy | -2.9eV | — | |||
| Property | lock-in energy | 99meV | — | |||
| Property | lock-in energy | 90meV | — | |||
| Band Gap | HOMO-LUMO gap | 1.49eV | — | |||
| Band Gap | HOMO-LUMO gap | 1.28eV | — | |||
| Band Gap | HOMO-LUMO gap | 1.37eV | — | |||
| Property | LUMO offset above Fermi level | 118meV | — | |||
| Property | LUMO offset above Fermi level | 81meV | — | |||
| Dipole Moment | gasphase dipole moment | 0.252D | — | |||
| Electron Affinity | electron affinity | 3.81eV | — | |||
| Ionization Energy | ionization energy | 5.32eV | — | |||
| Property | molecular orbital shift | 0.3eV | — | |||
| Workfunction | workfunction | 3.95eV | — | |||
| Workfunction | workfunction | 4.2eV | — | |||
| Binding Energy | HOMO | 2.3eV | — | |||
| Binding Energy | HOMO | 2.04eV | — | |||
| Property | phase transition center | 125K | — | |||
| Property | excitation energy | 74meV | — | |||
| Property | N 1s binding-energy difference to h-BN | 1.42eV | — | |||
| Property | N 1s binding-energy stability window | 25meV | — | |||
| Property | low-temperature superstructure | C80 (2x2) | — | |||
| Property | surface registry | aligned but incommensurate | — | |||
| Xps Binding Energy Shift | N 1s | 1.42eV | — | |||
| Xps Binding Energy Shift | N 1s | 25meV | — |
Related documents with shared materials, methods, properties, or citations.
A METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE USING GRAPHENE AND HEXAGONAL BORON NITRIDE
In-Plane and Out-of-Plane Excitonic Coupling in 2D Molecular Crystals
Formation and protection of an Eu-Ir surface compound below hexagonal boron nitride
Ultra-clean interface between high k dielectric and 2D MoS2
Robust flat bands in twisted trilayer graphene quasicrystals
Exotic Quantum Phenomena in Twisted Bilayer Graphene
Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl
Laser-assisted tunneling and Hartman effect in graphene under scalar potential and exchange fields
Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors
Charging of quantum emitters in hexagonal boron nitride - graphene heterostructures due to electrostatic screening