Research paper
Experimental GrowthExperimental CharacterizationLoad-Dependent Sliding behavior of WSe₂-x solid lubricant coating
Yue Wang, Himanshu Rai, Tomas Polcar
2025
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Hardness | substrate hardness | 9GPa | — | — | ||
| Coating Thickness | MoS₂ coating thickness | 1320nm | — | |||
| Coating Thickness | WSe₂-x coating thickness | 1030nm | — | |||
| Surface Roughness | Ra | 4nm | — | |||
| Surface Roughness | Ra | 28.8nm | — | |||
| Hardness | hardness | 3.5GPa | — | |||
| Youngs Modulus | Young’s modulus | 87.7GPa | — | |||
| Hardness | hardness | 0.5GPa | — | |||
| Youngs Modulus | Young’s modulus | 25.4GPa | — | |||
| Stoichiometric Ratio | Se/W atomic ratio | 0.92 | — | |||
| Stoichiometric Ratio | S/Mo atomic ratio | 1.91 | — | |||
| Raman Peak | E1g/E2g/A1g region | 245cm⁻¹ | — | |||
| Raman Peak | E1g | 170cm⁻¹ | — | |||
| Raman Peak | WO₃ | 807cm⁻¹ | — | |||
| Raman Peak | mode | 169cm⁻¹ | — | |||
| Raman Peak | mode | 371cm⁻¹ | — | |||
| Raman Peak | mode | 405cm⁻¹ | — | |||
| Xrd Peak Two Theta | (002) | 13.8deg | — | |||
| Xrd Peak Two Theta | (002) | 14.1deg | — | |||
| Xrd Peak Two Theta | (100) | 33.5deg | — | |||
| Xrd Peak Two Theta | (110) | 59.2deg | — | |||
| Xps Binding Energy | W 4f5/2 | 32.2eV | — | |||
| Xps Binding Energy | W 4f7/2 | 34.1eV | — | |||
| Xps Binding Energy | W 4f5/2 | 35.6eV | — | |||
| Xps Binding Energy | W 4f7/2 | 37.7eV | — | |||
| Xps Binding Energy | W 5p | 41.8eV | — | |||
| Xps Binding Energy | W 4f5/2 | 31.4eV | — | |||
| Xps Binding Energy | W 4f7/2 | 33.4eV | — | |||
| Xps Binding Energy | Se 3d5/2 | 54.7eV | — | |||
| Xps Binding Energy | Se 3d3/2 | 55.5eV | — | |||
| Xps Binding Energy | Se 3d5/2 | 53.8eV | — | |||
| Xps Binding Energy | Se 3d3/2 | 54.4eV | — | |||
| Xps Binding Energy | O 1s | 531.3eV | — | |||
| Xps Binding Energy | O 1s | 530.8eV | — | |||
| Xps Binding Energy | Mo 3d5/2 | 229.2eV | — | |||
| Xps Binding Energy | Mo 3d3/2 | 232.4eV | — | |||
| Xps Binding Energy | — | 235.3eV | — | |||
| Xps Binding Energy | O 1s | 531.5eV | — | |||
| Xps Binding Energy | O 1s | 530.5eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Hardness | substrate hardness | 9GPa | — | — | ||
| Coating Thickness | MoS₂ coating thickness | 1320nm | — | |||
| Coating Thickness | WSe₂-x coating thickness | 1030nm | — | |||
| Surface Roughness | Ra | 4nm | — | |||
| Surface Roughness | Ra | 28.8nm | — | |||
| Hardness | hardness | 3.5GPa | — | |||
| Youngs Modulus | Young’s modulus | 87.7GPa | — | |||
| Hardness | hardness | 0.5GPa | — | |||
| Youngs Modulus | Young’s modulus | 25.4GPa | — | |||
| Stoichiometric Ratio | Se/W atomic ratio | 0.92 | — | |||
| Stoichiometric Ratio | S/Mo atomic ratio | 1.91 | — | |||
| Raman Peak | E1g/E2g/A1g region | 245cm⁻¹ | — | |||
| Raman Peak | E1g | 170cm⁻¹ | — | |||
| Raman Peak | WO₃ | 807cm⁻¹ | — | |||
| Raman Peak | mode | 169cm⁻¹ | — | |||
| Raman Peak | mode | 371cm⁻¹ | — | |||
| Raman Peak | mode | 405cm⁻¹ | — | |||
| Xrd Peak Two Theta | (002) | 13.8deg | — | |||
| Xrd Peak Two Theta | (002) | 14.1deg | — | |||
| Xrd Peak Two Theta | (100) | 33.5deg | — | |||
| Xrd Peak Two Theta | (110) | 59.2deg | — | |||
| Xps Binding Energy | W 4f5/2 | 32.2eV | — | |||
| Xps Binding Energy | W 4f7/2 | 34.1eV | — | |||
| Xps Binding Energy | W 4f5/2 | 35.6eV | — | |||
| Xps Binding Energy | W 4f7/2 | 37.7eV | — | |||
| Xps Binding Energy | W 5p | 41.8eV | — | |||
| Xps Binding Energy | W 4f5/2 | 31.4eV | — | |||
| Xps Binding Energy | W 4f7/2 | 33.4eV | — | |||
| Xps Binding Energy | Se 3d5/2 | 54.7eV | — | |||
| Xps Binding Energy | Se 3d3/2 | 55.5eV | — | |||
| Xps Binding Energy | Se 3d5/2 | 53.8eV | — | |||
| Xps Binding Energy | Se 3d3/2 | 54.4eV | — | |||
| Xps Binding Energy | O 1s | 531.3eV | — | |||
| Xps Binding Energy | O 1s | 530.8eV | — | |||
| Xps Binding Energy | Mo 3d5/2 | 229.2eV | — | |||
| Xps Binding Energy | Mo 3d3/2 | 232.4eV | — | |||
| Xps Binding Energy | — | 235.3eV | — | |||
| Xps Binding Energy | O 1s | 531.5eV | — | |||
| Xps Binding Energy | O 1s | 530.5eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Hardness | substrate hardness | 9GPa | — | — | ||
| Coating Thickness | MoS₂ coating thickness | 1320nm | — | |||
| Coating Thickness | WSe₂-x coating thickness | 1030nm | — | |||
| Surface Roughness | Ra | 4nm | — | |||
| Surface Roughness | Ra | 28.8nm | — | |||
| Hardness | hardness | 3.5GPa | — | |||
| Youngs Modulus | Young’s modulus | 87.7GPa | — | |||
| Hardness | hardness | 0.5GPa | — | |||
| Youngs Modulus | Young’s modulus | 25.4GPa | — | |||
| Stoichiometric Ratio | Se/W atomic ratio | 0.92 | — | |||
| Stoichiometric Ratio | S/Mo atomic ratio | 1.91 | — | |||
| Raman Peak | E1g/E2g/A1g region | 245cm⁻¹ | — | |||
| Raman Peak | E1g | 170cm⁻¹ | — | |||
| Raman Peak | WO₃ | 807cm⁻¹ | — | |||
| Raman Peak | mode | 169cm⁻¹ | — | |||
| Raman Peak | mode | 371cm⁻¹ | — | |||
| Raman Peak | mode | 405cm⁻¹ | — | |||
| Xrd Peak Two Theta | (002) | 13.8deg | — | |||
| Xrd Peak Two Theta | (002) | 14.1deg | — | |||
| Xrd Peak Two Theta | (100) | 33.5deg | — | |||
| Xrd Peak Two Theta | (110) | 59.2deg | — | |||
| Xps Binding Energy | W 4f5/2 | 32.2eV | — | |||
| Xps Binding Energy | W 4f7/2 | 34.1eV | — | |||
| Xps Binding Energy | W 4f5/2 | 35.6eV | — | |||
| Xps Binding Energy | W 4f7/2 | 37.7eV | — | |||
| Xps Binding Energy | W 5p | 41.8eV | — | |||
| Xps Binding Energy | W 4f5/2 | 31.4eV | — | |||
| Xps Binding Energy | W 4f7/2 | 33.4eV | — | |||
| Xps Binding Energy | Se 3d5/2 | 54.7eV | — | |||
| Xps Binding Energy | Se 3d3/2 | 55.5eV | — | |||
| Xps Binding Energy | Se 3d5/2 | 53.8eV | — | |||
| Xps Binding Energy | Se 3d3/2 | 54.4eV | — | |||
| Xps Binding Energy | O 1s | 531.3eV | — | |||
| Xps Binding Energy | O 1s | 530.8eV | — | |||
| Xps Binding Energy | Mo 3d5/2 | 229.2eV | — | |||
| Xps Binding Energy | Mo 3d3/2 | 232.4eV | — | |||
| Xps Binding Energy | — | 235.3eV | — | |||
| Xps Binding Energy | O 1s | 531.5eV | — | |||
| Xps Binding Energy | O 1s | 530.5eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Hardness | substrate hardness | 9GPa | — | — | ||
| Coating Thickness | MoS₂ coating thickness | 1320nm | — | |||
| Coating Thickness | WSe₂-x coating thickness | 1030nm | — | |||
| Surface Roughness | Ra | 4nm | — | |||
| Surface Roughness | Ra | 28.8nm | — | |||
| Hardness | hardness | 3.5GPa | — | |||
| Youngs Modulus | Young’s modulus | 87.7GPa | — | |||
| Hardness | hardness | 0.5GPa | — | |||
| Youngs Modulus | Young’s modulus | 25.4GPa | — | |||
| Stoichiometric Ratio | Se/W atomic ratio | 0.92 | — | |||
| Stoichiometric Ratio | S/Mo atomic ratio | 1.91 | — | |||
| Raman Peak | E1g/E2g/A1g region | 245cm⁻¹ | — | |||
| Raman Peak | E1g | 170cm⁻¹ | — | |||
| Raman Peak | WO₃ | 807cm⁻¹ | — | |||
| Raman Peak | mode | 169cm⁻¹ | — | |||
| Raman Peak | mode | 371cm⁻¹ | — | |||
| Raman Peak | mode | 405cm⁻¹ | — | |||
| Xrd Peak Two Theta | (002) | 13.8deg | — | |||
| Xrd Peak Two Theta | (002) | 14.1deg | — | |||
| Xrd Peak Two Theta | (100) | 33.5deg | — | |||
| Xrd Peak Two Theta | (110) | 59.2deg | — | |||
| Xps Binding Energy | W 4f5/2 | 32.2eV | — | |||
| Xps Binding Energy | W 4f7/2 | 34.1eV | — | |||
| Xps Binding Energy | W 4f5/2 | 35.6eV | — | |||
| Xps Binding Energy | W 4f7/2 | 37.7eV | — | |||
| Xps Binding Energy | W 5p | 41.8eV | — | |||
| Xps Binding Energy | W 4f5/2 | 31.4eV | — | |||
| Xps Binding Energy | W 4f7/2 | 33.4eV | — | |||
| Xps Binding Energy | Se 3d5/2 | 54.7eV | — | |||
| Xps Binding Energy | Se 3d3/2 | 55.5eV | — | |||
| Xps Binding Energy | Se 3d5/2 | 53.8eV | — | |||
| Xps Binding Energy | Se 3d3/2 | 54.4eV | — | |||
| Xps Binding Energy | O 1s | 531.3eV | — | |||
| Xps Binding Energy | O 1s | 530.8eV | — | |||
| Xps Binding Energy | Mo 3d5/2 | 229.2eV | — | |||
| Xps Binding Energy | Mo 3d3/2 | 232.4eV | — | |||
| Xps Binding Energy | — | 235.3eV | — | |||
| Xps Binding Energy | O 1s | 531.5eV | — | |||
| Xps Binding Energy | O 1s | 530.5eV | — |