Research paper
Experimental CharacterizationTheoretical| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | C exciton | 2.67eV | — | |||
| Optical Band Gap | uncoupled C exciton energy | 2.67eV | — | |||
| PL Peak | Rabi splitting | 293meV | — | |||
| Absorption Peak | MoS₂ film thickness | 10nm | — | |||
| PL Peak | MoS₂ thickness used in transfer-matrix fit | 8nm | — |
Combined electronic excitation and knock-on damage in monolayer MoS2
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | C exciton | 2.67eV | — | |||
| Optical Band Gap | uncoupled C exciton energy | 2.67eV | — | |||
| PL Peak | Rabi splitting | 293meV | — | |||
| Absorption Peak | MoS₂ film thickness | 10nm | — | |||
| PL Peak | MoS₂ thickness used in transfer-matrix fit | 8nm | — |
Combined electronic excitation and knock-on damage in monolayer MoS2
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | C exciton | 2.67eV | — | |||
| Optical Band Gap | uncoupled C exciton energy | 2.67eV | — | |||
| PL Peak | Rabi splitting | 293meV | — | |||
| Absorption Peak | MoS₂ film thickness | 10nm | — | |||
| PL Peak | MoS₂ thickness used in transfer-matrix fit | 8nm | — |
Combined electronic excitation and knock-on damage in monolayer MoS2
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | C exciton | 2.67eV | — | |||
| Optical Band Gap | uncoupled C exciton energy | 2.67eV | — | |||
| PL Peak | Rabi splitting | 293meV | — | |||
| Absorption Peak | MoS₂ film thickness | 10nm | — | |||
| PL Peak | MoS₂ thickness used in transfer-matrix fit | 8nm | — |
Combined electronic excitation and knock-on damage in monolayer MoS2