Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiNx membrane thickness | 200nm | — | |||
| Layer Thickness | Nb electrode thickness | 47nm | — | |||
| Junction Diameter | through-hole aperture diameter | 1um | — | |||
| Junction Area | effective junction area | 7.854e-13m² | — | |||
| Layer Count | graphene layer count | 5 | — | |||
| Transition Temperature | Josephson coupling onset temperature | 4.3K | — | |||
| Transition Temperature | electrode superconducting transition onset | 8K | — | |||
| Critical Current | Ic | 110uA | — | |||
| Normal State Resistance | Rn | 3.6ohm | — | |||
| Superconducting Gap | Delta0 | 0.88meV | — | |||
| Icrn Product | eIcRn | 0.4meV | — | |||
| Dimensionless Ratio | eIcRn/Delta0 | 0.46 | — | |||
| Capacitance | junction capacitance | 39fF | — | |||
| Stewart Mccumber Parameter | betac | 0.169 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiNx membrane thickness | 200nm | — | |||
| Layer Thickness | Nb electrode thickness | 47nm | — | |||
| Junction Diameter | through-hole aperture diameter | 1um | — | |||
| Junction Area | effective junction area | 7.854e-13m² | — | |||
| Layer Count | graphene layer count | 5 | — | |||
| Transition Temperature | Josephson coupling onset temperature | 4.3K | — | |||
| Transition Temperature | electrode superconducting transition onset | 8K | — | |||
| Critical Current | Ic | 110uA | — | |||
| Normal State Resistance | Rn | 3.6ohm | — | |||
| Superconducting Gap | Delta0 | 0.88meV | — | |||
| Icrn Product | eIcRn | 0.4meV | — | |||
| Dimensionless Ratio | eIcRn/Delta0 | 0.46 | — | |||
| Capacitance | junction capacitance | 39fF | — | |||
| Stewart Mccumber Parameter | betac | 0.169 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiNx membrane thickness | 200nm | — | |||
| Layer Thickness | Nb electrode thickness | 47nm | — | |||
| Junction Diameter | through-hole aperture diameter | 1um | — | |||
| Junction Area | effective junction area | 7.854e-13m² | — | |||
| Layer Count | graphene layer count | 5 | — | |||
| Transition Temperature | Josephson coupling onset temperature | 4.3K | — | |||
| Transition Temperature | electrode superconducting transition onset | 8K | — | |||
| Critical Current | Ic | 110uA | — | |||
| Normal State Resistance | Rn | 3.6ohm | — | |||
| Superconducting Gap | Delta0 | 0.88meV | — | |||
| Icrn Product | eIcRn | 0.4meV | — | |||
| Dimensionless Ratio | eIcRn/Delta0 | 0.46 | — | |||
| Capacitance | junction capacitance | 39fF | — | |||
| Stewart Mccumber Parameter | betac | 0.169 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiNx membrane thickness | 200nm | — | |||
| Layer Thickness | Nb electrode thickness | 47nm | — | |||
| Junction Diameter | through-hole aperture diameter | 1um | — | |||
| Junction Area | effective junction area | 7.854e-13m² | — | |||
| Layer Count | graphene layer count | 5 | — | |||
| Transition Temperature | Josephson coupling onset temperature | 4.3K | — | |||
| Transition Temperature | electrode superconducting transition onset | 8K | — | |||
| Critical Current | Ic | 110uA | — | |||
| Normal State Resistance | Rn | 3.6ohm | — | |||
| Superconducting Gap | Delta0 | 0.88meV | — | |||
| Icrn Product | eIcRn | 0.4meV | — | |||
| Dimensionless Ratio | eIcRn/Delta0 | 0.46 | — | |||
| Capacitance | junction capacitance | 39fF | — | |||
| Stewart Mccumber Parameter | betac | 0.169 | — |