Patent
US 8,981,346CAPACITIVE-BASED GRAPHENE SENSOR
Nackieb Kamin
United States Government·US
Copyright © 2026 Matter42. All rights reserved.
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US 8,981,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
FIG. 2. System 200 includes electrodes 210 disposed on a substrate (not shown), a dielectric layer 220 disposed on electrodes 210, a graphene layer 230 …
FIGS. 3A-3C, such figures show diagrams illustrating the operation of a capacitive- based graphene sensor system 200 to detect radiation. System 200 may be …
FIG. 4 shows a diagram illustrating an exploded view of an embodiment of a system 300 in accordance with the Capacitive-Based Graphene Sensor. System 300 …
FIG. 5 shows a diagram illustrating a top view of an embodiment of a system 400 in accordance with the Capacitive-Based Graphene Sensor. As an example, system …
FIG. 6 shows a diagram illustrating a top view of an IC 500 containing a system in accordance with the Capacitive-Based Graphene Sensor. As an example, the …
FIGS. 7 and 8 show graphs illustrating the voltage output response of a differential amplifier in a capacitive-based graphene sensor system as the electric field …
FIG. 8 shows a graph 700 illustrating the voltage output response for odd numbered voltage levels from zero to ten. Particularly, line 710 shows the output …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system comprising: a semiconductor substrate having at least two electrodes disposed thereon; a dielectric layer disposed over the electrodes; a graphene layer disposed over the dielectric layer and electrically isolated from the electrodes; and a differential amplifier operatively connected to the electrodes and electrically isolated from the graphene layer.
The system of claim 1, wherein the differential amplifier is a complementary metal oxide semiconductor (CMOS) differential amplifier.
The system of claim 1, wherein the dielectric layer comprises polydimethylsiloxane.
The system of claim 1, wherein the electrodes are oriented in parallel on the semiconductor substrate.
The system of claim 1, wherein the semiconductor substrate comprises silicon.
The system of claim 1 f u rther comprising a radiation-sensitive layer disposed over the graphene layer. 12 Navy C ase No. 102192
The system of claim 1, wherein the semiconductor substrate is contained on an integrated circuit.
The system of claim 1 further comprising at least one voltage source operatively connected to two of the electrodes.
A system comprising: a semiconductor substrate having at least two electrodes oriented in parallel thereon; a dielectric layer disposed over the electrodes; a graphene layer disposed over the dielectric layer and electrically isolated from the electrodes; a radiation-sensitive layer disposed over the graphene layer; and a differential amplifier operatively connected to the electrodes and electrically isolated from the graphene layer.
The system of claim 10, wherein the differential amplifier is a complementary metal oxide semiconductor (CMOS) differential amplifier. 13 Navy C ase No. 102192
The system of claim 10, wherein the dielectric layer comprises polydimethylsiloxane.
The system of claim 10, wherein the semiconductor substrate comprises silicon.
The system of claim 10, wherein the nitride.
The system of claim 10, wherein the semiconductor circuit.
The system of claim 10 further comprising at two of the electrodes. 14 radiation-sensitive layer comprises hexagonal boron substrate is contained on an integrated least one voltage source operatively connected to
Layer stacks claimed or described, ordered top of device to substrate.
capacitive-based graphene sensor (without radiation-sensitive layer)
capacitive-based graphene sensor (with radiation-sensitive layer)
Materials described outside the worked examples.
semiconductor substrate
graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,981,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
FIG. 2. System 200 includes electrodes 210 disposed on a substrate (not shown), a dielectric layer 220 disposed on electrodes 210, a graphene layer 230 …
FIGS. 3A-3C, such figures show diagrams illustrating the operation of a capacitive- based graphene sensor system 200 to detect radiation. System 200 may be …
FIG. 4 shows a diagram illustrating an exploded view of an embodiment of a system 300 in accordance with the Capacitive-Based Graphene Sensor. System 300 …
FIG. 5 shows a diagram illustrating a top view of an embodiment of a system 400 in accordance with the Capacitive-Based Graphene Sensor. As an example, system …
FIG. 6 shows a diagram illustrating a top view of an IC 500 containing a system in accordance with the Capacitive-Based Graphene Sensor. As an example, the …
FIGS. 7 and 8 show graphs illustrating the voltage output response of a differential amplifier in a capacitive-based graphene sensor system as the electric field …
FIG. 8 shows a graph 700 illustrating the voltage output response for odd numbered voltage levels from zero to ten. Particularly, line 710 shows the output …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system comprising: a semiconductor substrate having at least two electrodes disposed thereon; a dielectric layer disposed over the electrodes; a graphene layer disposed over the dielectric layer and electrically isolated from the electrodes; and a differential amplifier operatively connected to the electrodes and electrically isolated from the graphene layer.
The system of claim 1, wherein the differential amplifier is a complementary metal oxide semiconductor (CMOS) differential amplifier.
The system of claim 1, wherein the dielectric layer comprises polydimethylsiloxane.
The system of claim 1, wherein the electrodes are oriented in parallel on the semiconductor substrate.
The system of claim 1, wherein the semiconductor substrate comprises silicon.
The system of claim 1 f u rther comprising a radiation-sensitive layer disposed over the graphene layer. 12 Navy C ase No. 102192
The system of claim 1, wherein the semiconductor substrate is contained on an integrated circuit.
The system of claim 1 further comprising at least one voltage source operatively connected to two of the electrodes.
A system comprising: a semiconductor substrate having at least two electrodes oriented in parallel thereon; a dielectric layer disposed over the electrodes; a graphene layer disposed over the dielectric layer and electrically isolated from the electrodes; a radiation-sensitive layer disposed over the graphene layer; and a differential amplifier operatively connected to the electrodes and electrically isolated from the graphene layer.
The system of claim 10, wherein the differential amplifier is a complementary metal oxide semiconductor (CMOS) differential amplifier. 13 Navy C ase No. 102192
The system of claim 10, wherein the dielectric layer comprises polydimethylsiloxane.
The system of claim 10, wherein the semiconductor substrate comprises silicon.
The system of claim 10, wherein the nitride.
The system of claim 10, wherein the semiconductor circuit.
The system of claim 10 further comprising at two of the electrodes. 14 radiation-sensitive layer comprises hexagonal boron substrate is contained on an integrated least one voltage source operatively connected to
Layer stacks claimed or described, ordered top of device to substrate.
capacitive-based graphene sensor (without radiation-sensitive layer)
capacitive-based graphene sensor (with radiation-sensitive layer)
Materials described outside the worked examples.
semiconductor substrate
graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,981,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
FIG. 2. System 200 includes electrodes 210 disposed on a substrate (not shown), a dielectric layer 220 disposed on electrodes 210, a graphene layer 230 …
FIGS. 3A-3C, such figures show diagrams illustrating the operation of a capacitive- based graphene sensor system 200 to detect radiation. System 200 may be …
FIG. 4 shows a diagram illustrating an exploded view of an embodiment of a system 300 in accordance with the Capacitive-Based Graphene Sensor. System 300 …
FIG. 5 shows a diagram illustrating a top view of an embodiment of a system 400 in accordance with the Capacitive-Based Graphene Sensor. As an example, system …
FIG. 6 shows a diagram illustrating a top view of an IC 500 containing a system in accordance with the Capacitive-Based Graphene Sensor. As an example, the …
FIGS. 7 and 8 show graphs illustrating the voltage output response of a differential amplifier in a capacitive-based graphene sensor system as the electric field …
FIG. 8 shows a graph 700 illustrating the voltage output response for odd numbered voltage levels from zero to ten. Particularly, line 710 shows the output …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system comprising: a semiconductor substrate having at least two electrodes disposed thereon; a dielectric layer disposed over the electrodes; a graphene layer disposed over the dielectric layer and electrically isolated from the electrodes; and a differential amplifier operatively connected to the electrodes and electrically isolated from the graphene layer.
The system of claim 1, wherein the differential amplifier is a complementary metal oxide semiconductor (CMOS) differential amplifier.
The system of claim 1, wherein the dielectric layer comprises polydimethylsiloxane.
The system of claim 1, wherein the electrodes are oriented in parallel on the semiconductor substrate.
The system of claim 1, wherein the semiconductor substrate comprises silicon.
The system of claim 1 f u rther comprising a radiation-sensitive layer disposed over the graphene layer. 12 Navy C ase No. 102192
The system of claim 1, wherein the semiconductor substrate is contained on an integrated circuit.
The system of claim 1 further comprising at least one voltage source operatively connected to two of the electrodes.
A system comprising: a semiconductor substrate having at least two electrodes oriented in parallel thereon; a dielectric layer disposed over the electrodes; a graphene layer disposed over the dielectric layer and electrically isolated from the electrodes; a radiation-sensitive layer disposed over the graphene layer; and a differential amplifier operatively connected to the electrodes and electrically isolated from the graphene layer.
The system of claim 10, wherein the differential amplifier is a complementary metal oxide semiconductor (CMOS) differential amplifier. 13 Navy C ase No. 102192
The system of claim 10, wherein the dielectric layer comprises polydimethylsiloxane.
The system of claim 10, wherein the semiconductor substrate comprises silicon.
The system of claim 10, wherein the nitride.
The system of claim 10, wherein the semiconductor circuit.
The system of claim 10 further comprising at two of the electrodes. 14 radiation-sensitive layer comprises hexagonal boron substrate is contained on an integrated least one voltage source operatively connected to
Layer stacks claimed or described, ordered top of device to substrate.
capacitive-based graphene sensor (without radiation-sensitive layer)
capacitive-based graphene sensor (with radiation-sensitive layer)
Materials described outside the worked examples.
semiconductor substrate
graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,981,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
FIG. 2. System 200 includes electrodes 210 disposed on a substrate (not shown), a dielectric layer 220 disposed on electrodes 210, a graphene layer 230 …
FIGS. 3A-3C, such figures show diagrams illustrating the operation of a capacitive- based graphene sensor system 200 to detect radiation. System 200 may be …
FIG. 4 shows a diagram illustrating an exploded view of an embodiment of a system 300 in accordance with the Capacitive-Based Graphene Sensor. System 300 …
FIG. 5 shows a diagram illustrating a top view of an embodiment of a system 400 in accordance with the Capacitive-Based Graphene Sensor. As an example, system …
FIG. 6 shows a diagram illustrating a top view of an IC 500 containing a system in accordance with the Capacitive-Based Graphene Sensor. As an example, the …
FIGS. 7 and 8 show graphs illustrating the voltage output response of a differential amplifier in a capacitive-based graphene sensor system as the electric field …
FIG. 8 shows a graph 700 illustrating the voltage output response for odd numbered voltage levels from zero to ten. Particularly, line 710 shows the output …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system comprising: a semiconductor substrate having at least two electrodes disposed thereon; a dielectric layer disposed over the electrodes; a graphene layer disposed over the dielectric layer and electrically isolated from the electrodes; and a differential amplifier operatively connected to the electrodes and electrically isolated from the graphene layer.
The system of claim 1, wherein the differential amplifier is a complementary metal oxide semiconductor (CMOS) differential amplifier.
The system of claim 1, wherein the dielectric layer comprises polydimethylsiloxane.
The system of claim 1, wherein the electrodes are oriented in parallel on the semiconductor substrate.
The system of claim 1, wherein the semiconductor substrate comprises silicon.
The system of claim 1 f u rther comprising a radiation-sensitive layer disposed over the graphene layer. 12 Navy C ase No. 102192
The system of claim 1, wherein the semiconductor substrate is contained on an integrated circuit.
The system of claim 1 further comprising at least one voltage source operatively connected to two of the electrodes.
A system comprising: a semiconductor substrate having at least two electrodes oriented in parallel thereon; a dielectric layer disposed over the electrodes; a graphene layer disposed over the dielectric layer and electrically isolated from the electrodes; a radiation-sensitive layer disposed over the graphene layer; and a differential amplifier operatively connected to the electrodes and electrically isolated from the graphene layer.
The system of claim 10, wherein the differential amplifier is a complementary metal oxide semiconductor (CMOS) differential amplifier. 13 Navy C ase No. 102192
The system of claim 10, wherein the dielectric layer comprises polydimethylsiloxane.
The system of claim 10, wherein the semiconductor substrate comprises silicon.
The system of claim 10, wherein the nitride.
The system of claim 10, wherein the semiconductor circuit.
The system of claim 10 further comprising at two of the electrodes. 14 radiation-sensitive layer comprises hexagonal boron substrate is contained on an integrated least one voltage source operatively connected to
Layer stacks claimed or described, ordered top of device to substrate.
capacitive-based graphene sensor (without radiation-sensitive layer)
capacitive-based graphene sensor (with radiation-sensitive layer)
Materials described outside the worked examples.
semiconductor substrate
graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
Related documents with shared materials, methods, properties, or citations.
silicon
Si
radiation-sensitive layer
hexagonal boron nitride
h-BN
graphene oxide
graphene bilayer
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
Graphene-Based Indicator
silicon
Si
radiation-sensitive layer
hexagonal boron nitride
h-BN
graphene oxide
graphene bilayer
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
Graphene-Based Indicator
silicon
Si
radiation-sensitive layer
hexagonal boron nitride
h-BN
graphene oxide
graphene bilayer
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
Graphene-Based Indicator
silicon
Si
radiation-sensitive layer
hexagonal boron nitride
h-BN
graphene oxide
graphene bilayer
FIG. 1 shows a diagram illustrating a side view of an embodiment of a system 10 in accordance with the Capacitive-Based Graphene Sensor. System 10 includes a …
Graphene-Based Indicator